JP5227900B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5227900B2 JP5227900B2 JP2009136617A JP2009136617A JP5227900B2 JP 5227900 B2 JP5227900 B2 JP 5227900B2 JP 2009136617 A JP2009136617 A JP 2009136617A JP 2009136617 A JP2009136617 A JP 2009136617A JP 5227900 B2 JP5227900 B2 JP 5227900B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Description
(a)従来のTFTの作製プロセスに適合した、簡単な方法である。
(b)照射面においてエネルギー分布が同一なレーザ光を照射することができる。
(c)スループットを向上させることを可能とする。これは、大面積基板の場合に特に有効である。
(d)単結晶に近い結晶粒を有する半導体膜を形成することができる。
(e)以上の利点を満たした上で、アクティブマトリクス型の液晶表示装置に代表される半導体装置において、半導体装置の動作特性および信頼性の向上を実現することができる。さらに、半導体装置の製造コストの低減を実現することができる。
を満たす入射角φより大きければ、干渉は起こらない。つまり、φ≧arcsin(W/2d)
のとき、干渉は起こらない。そのため、入射角φより大きい角度で入射させる場合には、複数のレーザ光の入射角を厳密に合わせなくてもよい。
を移動させれば、基板に対するレーザ光の入射角を変えることなく、108で示す方向へ照射することができる。106で示す方向への照射が終了すると、107で示す方向へステージ(または基板)を移動させ、レーザ光を照射しながら108で示す方向へステージ(または基板)を移動させれば、106で示す方向へ照射することができる。これらの移動を繰り返すことで、基板全面にレーザ光が照射される。
(図6(C))ここでは、エッチングガスにCF4とCl2とO2とを用い、W膜を選択的にエッチングする。この時、第2のエッチング処理により第2の導電層428b〜433bを形成する。一方、第1の導電層417a〜422aは、ほとんどエッチングされず、第2の形状の導電層428〜433を形成する。
例えば、TaN膜上にAlやCuを形成し、さらにTi膜を形成した積層膜をパターニングして配線を形成してもよい。(図8)
バンク712は100〜400nmの珪素を含む絶縁膜もしくは有機樹脂膜をパターニングして形成すれば良い。
Alq3にキナクリドン、ペリレンもしくはDCM1といった蛍光色素を添加することで発光色を制御することができる。
を作製することができる。即ち、それら電気光学装置を表示部に組み込んだ様々な電子機器に本発明を適用できる。
本発明は表示部3402に適用することができる。
また106、107、108には基板が移動する方向が示されている。
Claims (2)
- 基板上に半導体膜を形成する工程と、
複数のレーザ光の照射位置を第1の方向へ移動させながら、前記半導体膜の複数の第1の領域を結晶化させる工程と、
前記複数のレーザ光の照射位置を第2の方向へ移動させる工程と、
前記複数のレーザ光の照射位置を第3の方向へ移動させながら、前記半導体膜の複数の第2の領域を結晶化させる工程と、を有し、
前記第3の方向は、前記第1の方向と逆方向であり、
前記第2の方向は、前記第1の方向と垂直な方向であり、
前記複数のレーザ光は前記基板の表面に対して斜め方向から同じ角度で入射し、
前記基板の裏面側に第1の反射板を有し、
前記基板の表面側に第2の反射板を有し、
前記基板を通過した前記複数のレーザ光が前記第1の反射板で反射して前記半導体膜に再度照射され、
前記第1の反射板で反射して前記半導体膜を通過した前記複数のレーザ光が前記第2の反射板で反射して前記半導体膜に再度照射されることを特徴とする半導体装置の作製方法。 - 基板上に半導体膜を形成する工程と、
複数のレーザ光の照射位置を第1の方向へ移動させながら、前記半導体膜の複数の第1の領域を結晶化させる工程と、
前記複数のレーザ光の照射位置を第3の方向へ移動させながら、前記複数の第1の領域を結晶化させる工程と、
前記複数のレーザ光の照射位置を第2の方向へ移動させる工程と、
前記複数のレーザ光の照射位置を前記第1の方向へ移動させながら、前記半導体膜の複数の第2の領域を結晶化させる工程と、
前記複数のレーザ光の照射位置を前記第3の方向へ移動させながら、前記複数の第2の領域を結晶化させる工程と、を有し、
前記第3の方向は、前記第1の方向と逆方向であり、
前記第2の方向は、前記第1の方向と垂直な方向であり、
前記複数のレーザ光は前記基板の表面に対して斜め方向から同じ角度で入射し、
前記基板の裏面側に第1の反射板を有し、
前記基板の表面側に第2の反射板を有し、
前記基板を通過した前記複数のレーザ光が前記第1の反射板で反射して前記半導体膜に再度照射され、
前記第1の反射板で反射して前記半導体膜を通過した前記複数のレーザ光が前記第2の反射板で反射して前記半導体膜に再度照射されることを特徴とする半導体装置の作製方法。
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- 2002-07-31 SG SG200204609A patent/SG121721A1/en unknown
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- 2002-08-02 CN CN201010201368.6A patent/CN101879658B/zh not_active Expired - Fee Related
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Also Published As
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US20110272385A1 (en) | 2011-11-10 |
CN1405861A (zh) | 2003-03-26 |
US7868267B2 (en) | 2011-01-11 |
CN101879658B (zh) | 2016-01-20 |
SG121721A1 (en) | 2006-05-26 |
CN101879658A (zh) | 2010-11-10 |
TW552645B (en) | 2003-09-11 |
SG151085A1 (en) | 2009-04-30 |
CN100392829C (zh) | 2008-06-04 |
US20030024905A1 (en) | 2003-02-06 |
KR20030011724A (ko) | 2003-02-11 |
KR20090119818A (ko) | 2009-11-20 |
US8003499B2 (en) | 2011-08-23 |
JP2009206521A (ja) | 2009-09-10 |
MY157663A (en) | 2016-07-15 |
US20070099401A1 (en) | 2007-05-03 |
KR20090068196A (ko) | 2009-06-25 |
US8767782B2 (en) | 2014-07-01 |
CN101256947A (zh) | 2008-09-03 |
CN101256947B (zh) | 2010-08-18 |
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