DE60045653D1 - Laserbestrahlungsgerät - Google Patents
LaserbestrahlungsgerätInfo
- Publication number
- DE60045653D1 DE60045653D1 DE60045653T DE60045653T DE60045653D1 DE 60045653 D1 DE60045653 D1 DE 60045653D1 DE 60045653 T DE60045653 T DE 60045653T DE 60045653 T DE60045653 T DE 60045653T DE 60045653 D1 DE60045653 D1 DE 60045653D1
- Authority
- DE
- Germany
- Prior art keywords
- laser irradiation
- irradiation apparatus
- laser
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22951599 | 1999-08-13 | ||
JP2000244220A JP4748836B2 (ja) | 1999-08-13 | 2000-08-11 | レーザ照射装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60045653D1 true DE60045653D1 (de) | 2011-04-07 |
Family
ID=26528838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60045653T Expired - Lifetime DE60045653D1 (de) | 1999-08-13 | 2000-08-11 | Laserbestrahlungsgerät |
Country Status (4)
Country | Link |
---|---|
US (3) | US6563843B1 (de) |
EP (1) | EP1076359B1 (de) |
JP (1) | JP4748836B2 (de) |
DE (1) | DE60045653D1 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10253916A (ja) * | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | レーザー光学装置 |
JP4514861B2 (ja) * | 1999-11-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 |
US6856630B2 (en) * | 2000-02-02 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device |
US7662677B2 (en) * | 2000-04-28 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
TW552645B (en) | 2001-08-03 | 2003-09-11 | Semiconductor Energy Lab | Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device |
KR100885904B1 (ko) * | 2001-08-10 | 2009-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레이저 어닐링장치 및 반도체장치의 제작방법 |
US7372630B2 (en) * | 2001-08-17 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP3977038B2 (ja) * | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
JP4397571B2 (ja) | 2001-09-25 | 2010-01-13 | 株式会社半導体エネルギー研究所 | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
JP3903761B2 (ja) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
TWI289896B (en) * | 2001-11-09 | 2007-11-11 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
JP3973882B2 (ja) * | 2001-11-26 | 2007-09-12 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
US7113527B2 (en) * | 2001-12-21 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for laser irradiation and manufacturing method of semiconductor device |
EP1400832B1 (de) * | 2002-09-19 | 2014-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung |
SG129265A1 (en) * | 2002-11-29 | 2007-02-26 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device |
JP2004241561A (ja) * | 2003-02-05 | 2004-08-26 | Mitsubishi Electric Corp | レーザプロセス装置 |
US7327916B2 (en) * | 2003-03-11 | 2008-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device |
US7304005B2 (en) * | 2003-03-17 | 2007-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device |
SG137674A1 (en) * | 2003-04-24 | 2007-12-28 | Semiconductor Energy Lab | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
US7245802B2 (en) * | 2003-08-04 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device |
US7450307B2 (en) * | 2003-09-09 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
AU2003262031A1 (en) * | 2003-09-09 | 2005-04-06 | Sumitomo Heavy Industries, Ltd. | Laser processing method and processing apparatus |
US7169630B2 (en) * | 2003-09-30 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
JP4579575B2 (ja) * | 2004-05-14 | 2010-11-10 | 株式会社半導体エネルギー研究所 | レーザ照射方法及びレーザ照射装置 |
CN100361276C (zh) * | 2004-07-02 | 2008-01-09 | 电子科技大学 | 单片光电集成光接收器制作中消除应力和损伤的方法 |
US7387954B2 (en) | 2004-10-04 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
US7664365B2 (en) * | 2004-10-27 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
WO2007049525A1 (en) * | 2005-10-26 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and manufacturing method of semiconductor device |
US20070127005A1 (en) | 2005-12-02 | 2007-06-07 | Asml Holding N.V. | Illumination system |
JP2007214527A (ja) * | 2006-01-13 | 2007-08-23 | Ihi Corp | レーザアニール方法およびレーザアニール装置 |
US7563661B2 (en) * | 2006-02-02 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus |
ATE445477T1 (de) * | 2006-02-24 | 2009-10-15 | Trumpf Werkzeugmaschinen Gmbh | Laserbearbeitungsanlage mit einer spiegelanordnung mit einem zwei spiegelbereiche und eine schattenzone aufweisenden spiegel |
US7615722B2 (en) * | 2006-07-17 | 2009-11-10 | Coherent, Inc. | Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers |
US7888620B2 (en) * | 2006-07-31 | 2011-02-15 | Electro Scientific Industries, Inc. | Reducing coherent crosstalk in dual-beam laser processing system |
US20080083706A1 (en) * | 2006-10-05 | 2008-04-10 | Mu-Gahat Enterprises, Llc | Reverse side film laser circuit etching |
US7633035B2 (en) * | 2006-10-05 | 2009-12-15 | Mu-Gahat Holdings Inc. | Reverse side film laser circuit etching |
JP5050232B2 (ja) * | 2007-02-20 | 2012-10-17 | 株式会社総合車両製作所 | レーザ溶接用ヘッド |
US20090061251A1 (en) * | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by additive deposition |
US20090061112A1 (en) * | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by subtractive deposition |
US7891821B2 (en) * | 2007-12-17 | 2011-02-22 | Coherent, Inc. | Laser beam transformer and projector having stacked plates |
GB0816308D0 (en) * | 2008-09-05 | 2008-10-15 | Mtt Technologies Ltd | Optical module |
KR20110094022A (ko) * | 2008-11-14 | 2011-08-19 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막 결정화를 위한 시스템 및 방법 |
DE102009009366A1 (de) * | 2009-02-18 | 2010-08-19 | Limo Patentverwaltung Gmbh & Co. Kg | Vorrichtung zur Homogenisierung von Laserstrahlung |
KR101097328B1 (ko) * | 2010-01-07 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법 |
JP6116919B2 (ja) * | 2013-01-18 | 2017-04-19 | 株式会社アルバック | レーザ転写装置 |
JP6140548B2 (ja) * | 2013-06-25 | 2017-05-31 | 株式会社アルバック | レーザ転写装置 |
CN105140768B (zh) * | 2015-09-28 | 2018-09-07 | 湖北航天技术研究院总体设计所 | 一种一维多光束高占空比装置 |
KR102582652B1 (ko) * | 2016-12-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
CN109986079B (zh) * | 2019-03-29 | 2020-04-14 | 西北大学 | 激光线阵3d金属打印机及其文件转换、打印控制方法 |
CN110142406B (zh) * | 2019-03-29 | 2020-05-19 | 西北大学 | 二维光纤面阵高精度激光3d金属打印机及其打印控制方法 |
DE102019118676B4 (de) * | 2019-07-10 | 2021-10-21 | Innovavent Gmbh | Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht |
CN111897134B (zh) * | 2020-07-31 | 2022-02-25 | 西安炬光科技股份有限公司 | 一种光学模组和医疗激光装置 |
KR20220099192A (ko) * | 2021-01-05 | 2022-07-13 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
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JP3429129B2 (ja) * | 1996-04-26 | 2003-07-22 | 三菱電機株式会社 | 低温ポリシリコン薄膜トランジスタのレーザアニーリング方法 |
JPH10125585A (ja) * | 1996-10-15 | 1998-05-15 | Nikon Corp | 半導体製造装置の照明光学系 |
US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
JPH10253916A (ja) | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | レーザー光学装置 |
DE69740181D1 (de) * | 1997-05-20 | 2011-06-09 | Bull Sa | Dynamischer Direktzugriffspeicher mit variabler Konfiguration für ein Datenverarbeitungssystem und entsprechender Datenträger für eine verschachtelte Speicherblockkonfiguration |
US6535535B1 (en) | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
US6573162B2 (en) | 1999-12-24 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method of fabricating a semiconductor device |
-
2000
- 2000-08-11 EP EP00117451A patent/EP1076359B1/de not_active Expired - Lifetime
- 2000-08-11 JP JP2000244220A patent/JP4748836B2/ja not_active Expired - Fee Related
- 2000-08-11 DE DE60045653T patent/DE60045653D1/de not_active Expired - Lifetime
- 2000-08-14 US US09/637,905 patent/US6563843B1/en not_active Expired - Lifetime
-
2003
- 2003-04-29 US US10/424,874 patent/US7135390B2/en not_active Expired - Fee Related
-
2006
- 2006-11-09 US US11/594,881 patent/US7375010B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1076359B1 (de) | 2011-02-23 |
US20030203602A1 (en) | 2003-10-30 |
EP1076359A3 (de) | 2007-01-10 |
US7375010B2 (en) | 2008-05-20 |
EP1076359A2 (de) | 2001-02-14 |
US6563843B1 (en) | 2003-05-13 |
JP2001127003A (ja) | 2001-05-11 |
US7135390B2 (en) | 2006-11-14 |
US20070054479A1 (en) | 2007-03-08 |
JP4748836B2 (ja) | 2011-08-17 |
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