DE60045653D1 - Laserbestrahlungsgerät - Google Patents

Laserbestrahlungsgerät

Info

Publication number
DE60045653D1
DE60045653D1 DE60045653T DE60045653T DE60045653D1 DE 60045653 D1 DE60045653 D1 DE 60045653D1 DE 60045653 T DE60045653 T DE 60045653T DE 60045653 T DE60045653 T DE 60045653T DE 60045653 D1 DE60045653 D1 DE 60045653D1
Authority
DE
Germany
Prior art keywords
laser irradiation
irradiation apparatus
laser
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045653T
Other languages
English (en)
Inventor
Koichiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE60045653D1 publication Critical patent/DE60045653D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60045653T 1999-08-13 2000-08-11 Laserbestrahlungsgerät Expired - Lifetime DE60045653D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22951599 1999-08-13
JP2000244220A JP4748836B2 (ja) 1999-08-13 2000-08-11 レーザ照射装置

Publications (1)

Publication Number Publication Date
DE60045653D1 true DE60045653D1 (de) 2011-04-07

Family

ID=26528838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045653T Expired - Lifetime DE60045653D1 (de) 1999-08-13 2000-08-11 Laserbestrahlungsgerät

Country Status (4)

Country Link
US (3) US6563843B1 (de)
EP (1) EP1076359B1 (de)
JP (1) JP4748836B2 (de)
DE (1) DE60045653D1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10253916A (ja) * 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP4514861B2 (ja) * 1999-11-29 2010-07-28 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US6856630B2 (en) * 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US7662677B2 (en) * 2000-04-28 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
US7372630B2 (en) * 2001-08-17 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
JP3973882B2 (ja) * 2001-11-26 2007-09-12 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
US7113527B2 (en) * 2001-12-21 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for laser irradiation and manufacturing method of semiconductor device
EP1400832B1 (de) * 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP2004241561A (ja) * 2003-02-05 2004-08-26 Mitsubishi Electric Corp レーザプロセス装置
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7450307B2 (en) * 2003-09-09 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
WO2005025800A1 (ja) * 2003-09-09 2005-03-24 Sumitomo Heavy Industries, Ltd. レーザ加工方法及び加工装置
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
CN100361276C (zh) * 2004-07-02 2008-01-09 电子科技大学 单片光电集成光接收器制作中消除应力和损伤的方法
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
WO2007049525A1 (en) * 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US20070127005A1 (en) 2005-12-02 2007-06-07 Asml Holding N.V. Illumination system
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
EP1998928B1 (de) * 2006-02-24 2009-10-14 Trumpf Werkzeugmaschinen GmbH + Co. KG Laserbearbeitungsanlage mit einer spiegelanordnung mit einem zwei spiegelbereiche und eine schattenzone aufweisenden spiegel
US7615722B2 (en) * 2006-07-17 2009-11-10 Coherent, Inc. Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers
US7888620B2 (en) * 2006-07-31 2011-02-15 Electro Scientific Industries, Inc. Reducing coherent crosstalk in dual-beam laser processing system
US7633035B2 (en) * 2006-10-05 2009-12-15 Mu-Gahat Holdings Inc. Reverse side film laser circuit etching
US20080083706A1 (en) * 2006-10-05 2008-04-10 Mu-Gahat Enterprises, Llc Reverse side film laser circuit etching
JP5050232B2 (ja) * 2007-02-20 2012-10-17 株式会社総合車両製作所 レーザ溶接用ヘッド
US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
US7891821B2 (en) * 2007-12-17 2011-02-22 Coherent, Inc. Laser beam transformer and projector having stacked plates
GB0816308D0 (en) * 2008-09-05 2008-10-15 Mtt Technologies Ltd Optical module
CN102232239A (zh) * 2008-11-14 2011-11-02 纽约市哥伦比亚大学理事会 用于薄膜结晶的系统和方法
DE102009009366A1 (de) * 2009-02-18 2010-08-19 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Homogenisierung von Laserstrahlung
KR101097328B1 (ko) * 2010-01-07 2011-12-23 삼성모바일디스플레이주식회사 기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법
JP6116919B2 (ja) * 2013-01-18 2017-04-19 株式会社アルバック レーザ転写装置
JP6140548B2 (ja) * 2013-06-25 2017-05-31 株式会社アルバック レーザ転写装置
CN105140768B (zh) * 2015-09-28 2018-09-07 湖北航天技术研究院总体设计所 一种一维多光束高占空比装置
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
CN109986079B (zh) * 2019-03-29 2020-04-14 西北大学 激光线阵3d金属打印机及其文件转换、打印控制方法
CN110142406B (zh) * 2019-03-29 2020-05-19 西北大学 二维光纤面阵高精度激光3d金属打印机及其打印控制方法
DE102019118676B4 (de) * 2019-07-10 2021-10-21 Innovavent Gmbh Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht
CN111897134B (zh) * 2020-07-31 2022-02-25 西安炬光科技股份有限公司 一种光学模组和医疗激光装置
KR20220099192A (ko) * 2021-01-05 2022-07-13 삼성디스플레이 주식회사 레이저 결정화 장치

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330363A (en) 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
US4475027A (en) * 1981-11-17 1984-10-02 Allied Corporation Optical beam homogenizer
US4733944A (en) 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
DE3750174T2 (de) 1986-10-30 1994-11-17 Canon K.K., Tokio/Tokyo Belichtungseinrichtung.
JPH01287924A (ja) 1988-03-30 1989-11-20 Hitachi Ltd コヒーレント制御露光装置
US5081637A (en) * 1989-11-28 1992-01-14 Massachusetts Institute Of Technology Multiple-laser pump optical system
US5185758A (en) * 1989-11-28 1993-02-09 Massachusetts Institute Of Technology Multiple-laser pump optical system
US5719704A (en) 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
CA2071598C (en) * 1991-06-21 1999-01-19 Akira Eda Optical device and method of manufacturing the same
US5185785A (en) * 1991-10-31 1993-02-09 At&T Bell Laboratories Method and apparatus for recording and rating telecommunication transactions made over a communication network
KR100269350B1 (ko) * 1991-11-26 2000-10-16 구본준 박막트랜지스터의제조방법
JPH06232069A (ja) 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5534970A (en) * 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (de) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
JP3312447B2 (ja) * 1993-11-15 2002-08-05 ソニー株式会社 半導体露光装置
JP3388042B2 (ja) * 1994-11-18 2003-03-17 三菱電機株式会社 レーザアニーリング方法
JP3593375B2 (ja) * 1995-02-07 2004-11-24 株式会社日立製作所 微小欠陥検出方法及びその装置
DE19511593C2 (de) * 1995-03-29 1997-02-13 Siemens Ag Mikrooptische Vorrichtung
JPH09129573A (ja) * 1995-07-25 1997-05-16 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP3429129B2 (ja) * 1996-04-26 2003-07-22 三菱電機株式会社 低温ポリシリコン薄膜トランジスタのレーザアニーリング方法
JPH10125585A (ja) * 1996-10-15 1998-05-15 Nikon Corp 半導体製造装置の照明光学系
US5867324A (en) * 1997-01-28 1999-02-02 Lightwave Electronics Corp. Side-pumped laser with shaped laser beam
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
DE69740181D1 (de) * 1997-05-20 2011-06-09 Bull Sa Dynamischer Direktzugriffspeicher mit variabler Konfiguration für ein Datenverarbeitungssystem und entsprechender Datenträger für eine verschachtelte Speicherblockkonfiguration
US6535535B1 (en) 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
US6573162B2 (en) * 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device

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US7375010B2 (en) 2008-05-20
EP1076359A2 (de) 2001-02-14
US20070054479A1 (en) 2007-03-08
EP1076359A3 (de) 2007-01-10
US20030203602A1 (en) 2003-10-30
US7135390B2 (en) 2006-11-14
JP4748836B2 (ja) 2011-08-17
JP2001127003A (ja) 2001-05-11
EP1076359B1 (de) 2011-02-23
US6563843B1 (en) 2003-05-13

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