JP5178006B2 - 有機発光ダイオードを有するピクセル、及びそのピクセルを作成する方法 - Google Patents
有機発光ダイオードを有するピクセル、及びそのピクセルを作成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 43
- 239000010410 layer Substances 0.000 claims description 136
- 239000012212 insulator Substances 0.000 claims description 100
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 230000003746 surface roughness Effects 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 10
- 239000007772 electrode material Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 230000008569 process Effects 0.000 description 20
- 238000001723 curing Methods 0.000 description 15
- 239000011651 chromium Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
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- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
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- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- 239000004952 Polyamide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- QQWICBKIBSOBIT-WXUKJITCSA-N [(e)-2-(4-bicyclo[4.2.0]octa-1(6),2,4-trienyl)ethenyl]-[[(e)-2-(4-bicyclo[4.2.0]octa-1(6),2,4-trienyl)ethenyl]-dimethylsilyl]oxy-dimethylsilane Chemical compound C1=C2CCC2=CC(/C=C/[Si](C)(O[Si](C)(C)\C=C\C=2C=C3CCC3=CC=2)C)=C1 QQWICBKIBSOBIT-WXUKJITCSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Description
type)の2つのタイプがある。アクティブマトリックスディスプレイでは、薄膜トランジスタ(TFT)が各ピクセルに備えられており、ディスプレイのOLEDを駆動するようになっている。アクティブマトリックスは、高いピーク駆動電流を削減し、それによって高解像度及び高情報密度を可能とし、パッシブマトリックスに比して電力消費と寿命を改善している。
(http://www.dow.com./cyclotene/prods/402235.htm.)の"CycloteneTM 4000 Series
Advanced Electronic Resins(Photo-BCB)" で与えられている。
oxide)或いは窒化酸化ケイ素(silicon
oxide nitiride)が層間絶縁体21として用いることができる。層間絶縁体内に、ソースドレインと遮蔽金属化層との間の相互接続を提供する複数のビアを生成した後、遮蔽金属層が堆積され、パターン形成され遮蔽電極24及び相互接続プレート26を形成する。相互接続プレート26は、TFTのソース又はドレインの一方になりうる、TFTピクセルの所定のノードからOLEDデバイス20のボトム電極まで電位(potential)を与える働きをする。そして、平坦化処理層22が上述のように生成されパターン形成され、続いてOLEDボトム電極20の堆積及びパターン形成、OLED層18及びトップ透明電極16の堆積が行われる。
nitride)、窒化酸化ケイ素(silicon
oxide-nitride))の材料でできている。
Claims (30)
- 薄膜トランジスタ(TFT)ベースのバックプレーンと有機発光デバイス(OLED)とが同一の基板上に形成された垂直構造を有するピクセルであって、
実質的に平らな上側表面を有する基板と、
OLEDを電気的に駆動するために前記基板の前記実質的に平らな上側表面上に形成されると共に、前記基板の前記上側表面から遠い側に垂直プロファイルを有するTFTベースのバックプレーンと、
前記TFTベースのバックプレーン上に形成されると共に、該TFTベースのバックプレーン上の前記垂直プロファイルを平坦化するための滑らかで平坦化された上側表面を持つ平坦化処理絶縁体層と、
前記平坦化処理絶縁体層の前記平坦化された上側表面上に形成されると共に、ボトム電極、トップ電極及び前記ボトム電極と前記トップ電極との間の有機発光層を有するOLEDであって、前記ボトム電極は前記平坦化された上側表面上に形成され、前記トップ電極は前記OLEDにより放出されるべき光が前記基板とは反対の方向に進行して上面発光OLEDを形成するように透明であり、前記OLEDは前記平坦化処理絶縁体層を介して前記TFTベースのバックプレーンと垂直に集積され、前記有機発光層における前記OLEDの前記ボトム電極と前記トップ電極との間の部分が前記TFTベースのバックプレーンにおけるトランジスタのゲート、ソース又はドレインノードと少なくとも部分的に重なり合うようなOLEDと、
前記TFTベースのバックプレーンと前記OLEDとの間の連続的なコミュニケーションパスを形成するための前記平坦化処理絶縁体層における第1のビアであって、側面部が前記TFTベースのバックプレーンに対して、前記平坦化処理絶縁体層の上部と前記TFTベースのバックプレーンのソース又はドレインノードの金属部との間で、連続的に傾斜されている第1のビアと、
前記第1のビア及び前記ボトム電極の縁部を覆う一方、該ボトム電極の残部を露出されたままにするために前記ボトム電極上に堆積される付加的絶縁体層であって、該付加的絶縁体層上に前記有機発光層が設けられる付加的絶縁体層と、
を有するピクセル。 - 前記OLEDのボトム電極と該OLEDの1以上の層との間に設けられる前記付加的絶縁体層は、該付加的絶縁体層がピクセルの縁部において前記OLEDの1以上の層を該OLEDのボトム電極から絶縁する一方、前記OLEDのボトム電極の残部を前記OLEDの1以上の層と直接接触したままにするようにパターン形成される請求項1に記載のピクセル。
- 前記ピクセルは、前記平坦化処理絶縁体層及びこれに続く電極層上に1nmのオーダの表面粗さを有している請求項1に記載のピクセル。
- 前記平坦化処理絶縁体層における前記ビアのプロファイル内にピクセル電極材料による連続的な側面部の被覆を更に有する請求項1に記載のピクセル。
- 前記平坦化処理絶縁体層における前記ビアのプロファイル内にピクセル電極材料による連続的な側面部の被覆を更に有する請求項1に記載のピクセル。
- 前記TFT上であって、且つ、少なくとも該TFTの前記ソース及びドレインノード間の領域上に形成された遮蔽電極を更に有する請求項1に記載のピクセル。
- 前記TFTベースのバックプレーンは、
基板と、
ゲート、ソース及びドレインノードと、
前記ソース及びドレインノード上の層間絶縁体層と、
前記層間絶縁体層の第2のビア上にパターン形成されると共に、前記ソース又はドレインノードに接続される相互接続プレートと、
を有する、
請求項1に記載のピクセル。 - 前記TFTベースのバックプレーンは、
基板と、
ゲート、ソース及びドレインノードと、
前記ソース及びドレインノード上の層間絶縁体層と、
前記層間絶縁体層の第2のビア上にパターン形成されると共に、前記ソース又はドレインノードに接触する相互接続プレートと、
前記相互接続プレートに接触する、前記層間絶縁体層上のコンタクトプレートと、
を有する、
請求項1に記載のピクセル。 - 前記平坦化処理絶縁体層と前記層間絶縁体層との間であって、且つ、少なくとも前記ソースノードと前記ドレインノードとの間の領域上に配置された遮蔽電極を更に有する請求項7に記載のピクセル。
- 前記TFTベースのバックプレーンは、
基板と、
ゲート、ソース及びドレインノードと、
コンタクトプレートと、
を含み、
前記ソース又はドレインの材料は前記コンタクトプレートと部分的に重なる、請求項1に記載のピクセル。 - 前記ソースノードと前記ドレインノードとの間の領域上に形成された遮蔽電極を更に有する請求項10に記載のピクセル。
- 前記平坦化処理絶縁体層は感光性ベンゾシクロブテン(BCB)を含み、前記第1のビアの前記傾斜は前記感光性BCBの露光時間に関係している請求項1に記載のピクセル。
- 前記付加的絶縁体層は、ポリマー絶縁体、無機絶縁体、BCB、ポリイミド、窒化ケイ素、薄膜無機物、又はこれらの組み合わせを含む請求項1に記載のピクセル。
- 前記付加的絶縁体層は、ポリマー絶縁体、無機絶縁体、BCB、ポリイミド、窒化ケイ素、薄膜無機物、又はこれらの組み合わせを含む請求項1に記載のピクセル。
- 複数のピクセルを含み、これらピクセルの各々が薄膜トランジスタ(TFT)ベースのバックプレーン及び有機発光デバイス(OLED)が同一の基板上に形成される垂直構造を有するようなディスプレイを製造する方法であって、
実質的に平らな上側表面を持つ基板上にゲート、ソース及びドレインノードを含むと共に、前記基板の前記上側表面から遠い側に垂直プロファイルを有するTFTベースのバックプレーンを形成する工程と、
前記TFTベースのバックプレーン上の前記垂直プロファイルを平坦化するための滑らかで平坦化された上側表面を持つ平坦化処理絶縁体層を前記TFTベースのバックプレーン上に形成する工程と、
前記平坦化処理絶縁体層に第1のビアを、該第1のビアの側面部が前記TFTベースのバックプレーンに対して、前記平坦化処理絶縁体層の上部と前記TFTベースのバックプレーンのソース又はドレインノードの金属部との間で、連続的に傾斜されるように形成する工程と、
前記OLEDを前記平坦化処理絶縁体層の前記平坦化された上側表面上に形成する工程であって、前記OLEDはトップ電極と、ボトム電極と、前記トップ及びボトム電極間の有機発光層とを有し、前記ボトム電極は前記平坦化された上側表面上に形成され、前記OLEDは前記平坦化処理絶縁体層を介して前記TFTベースのバックプレーンと垂直に集積され、前記有機発光層における前記トップ及びボトム電極間の部分は前記TFTベースのバックプレーンのゲート、ソース又はドレインノードと少なくとも部分的に重なり、前記第1のビアは前記TFTベースのバックプレーンと前記OLEDとの間のコミュニケーションパスを形成し、前記トップ電極は、前記OLEDにより放出されるべき光が前記基板とは反対の方向に進行して上面発光OLEDを形成するように透明である工程と、
前記第1のビア及び前記ボトム電極の縁部を覆う一方、該ボトム電極の残部を露出されたままにするための付加的絶縁体層を形成する工程と、
を有する方法。 - 前記付加的絶縁体層は、前記OLEDのボトム電極と前記OLEDの1以上の層との間に、該付加的絶縁体がピクセルの縁部において前記OLEDの1以上の層を前記OLEDのボトム電極から絶縁する一方、前記OLEDのボトム電極の残部を前記OLEDの1以上の層と直接接触したままとするように形成される請求項15に記載の方法。
- 前記付加的絶縁体層上に前記有機発光層を設ける工程を更に有し、前記付加的絶縁体層が絶縁体キャップである請求項15に記載の方法。
- 前記平坦化処理絶縁体層は感光性ベンゾシクロブテン(BCB)を有し、前記第1のビアを形成する工程が、前記TFTベースのバックプレーンに対する該第1のビアの前記側面部の傾斜を調整するために前記感光性BCBの露光時間を調整する工程を有する請求項15に記載の方法。
- 前記平坦化処理絶縁体層は非感光性ベンゾシクロブテン(BCB)を有する請求項15に記載の方法。
- 前記ピクセルは、該ピクセルが前記平坦化処理絶縁体層及びこれに続く電極層上に1nmのオーダの表面粗さを有するように形成される請求項15に記載の方法。
- 前記平坦化処理絶縁体層における前記ビアのプロファイル内にピクセル電極材料により連続的な側面部の被覆を設ける工程を更に有する請求項15に記載の方法。
- 少なくとも前記TFTの前記ソース及びドレインノード間の領域上に遮蔽電極を形成する工程を更に有する請求項15に記載の方法。
- 前記TFTベースのバックプレーンを形成する工程は、
前記TFT上に層間絶縁体層をパターン形成する工程と、
前記層間絶縁体層の第2のビア上に、前記ソース又はドレインノードに接続される相互接続プレートをパターン形成する工程と、
を有する、請求項15に記載の方法。 - 前記TFTベースのバックプレーンを形成する工程は、
前記TFT上に層間絶縁体層をパターン形成する工程と、
前記層間絶縁体層の第2のビア上に、前記ソース又はドレインノードに接続される相互接続プレートを形成する工程と、
前記層間絶縁体層上にコンタクトプレートを、該コンタクトプレートが前記相互接続プレートに接触するように形成する工程と、
を有する、請求項15に記載の方法。 - 前記TFTベースのバックプレーンを形成する工程は、
コンタクトプレート及びソース又はドレインを、前記ソース又はドレインが前記コンタクトプレートと部分的に重なるように形成する工程、
を有する、請求項15に記載の方法。 - 前記平坦化処理絶縁体層は非感光性ベンゾシクロブテン(BCB)を有する請求項1に記載のピクセル。
- 前記ピクセルは上面発光ピクセルである請求項1に記載のピクセル。
- 前記ピクセルは上面発光ピクセルである請求項15に記載の方法。
- 前記平坦化処理絶縁体層及び前記ボトム電極が1nmのオーダの表面粗さを有する請求項3に記載のピクセル。
- 前記TFTベースのバックプレーン上の構造の垂直プロファイルが、45度未満の側面部角度を有する請求項1に記載のピクセル。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824066B2 (en) | 2020-05-14 | 2023-11-21 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
CA2419704A1 (en) * | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
US8029186B2 (en) * | 2004-11-05 | 2011-10-04 | International Business Machines Corporation | Method for thermal characterization under non-uniform heat load |
KR100741967B1 (ko) | 2004-11-08 | 2007-07-23 | 삼성에스디아이 주식회사 | 평판표시장치 |
US7189991B2 (en) * | 2004-12-29 | 2007-03-13 | E. I. Du Pont De Nemours And Company | Electronic devices comprising conductive members that connect electrodes to other conductive members within a substrate and processes for forming the electronic devices |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
JP4837295B2 (ja) | 2005-03-02 | 2011-12-14 | 株式会社沖データ | 半導体装置、led装置、ledヘッド、及び画像形成装置 |
KR100683766B1 (ko) * | 2005-03-30 | 2007-02-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR102381391B1 (ko) | 2015-04-16 | 2022-03-31 | 삼성디스플레이 주식회사 | 표시 장치 |
US7459351B2 (en) * | 2005-08-16 | 2008-12-02 | Chunghwa Picture Tubes, Ltd. | Method of manufacturing an AMOLED |
US7381596B2 (en) * | 2005-09-26 | 2008-06-03 | Chunghwa Picture Tubes, Ltd. | Method of manufacturing an AMOLED |
JP5397219B2 (ja) | 2006-04-19 | 2014-01-22 | イグニス・イノベーション・インコーポレイテッド | アクティブマトリックス表示装置用の安定な駆動スキーム |
WO2008102867A1 (ja) * | 2007-02-22 | 2008-08-28 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法 |
JP2009175198A (ja) * | 2008-01-21 | 2009-08-06 | Sony Corp | El表示パネル及び電子機器 |
US8229255B2 (en) * | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US20100304061A1 (en) * | 2009-05-26 | 2010-12-02 | Zena Technologies, Inc. | Fabrication of high aspect ratio features in a glass layer by etching |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
US8791470B2 (en) * | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US20110115041A1 (en) * | 2009-11-19 | 2011-05-19 | Zena Technologies, Inc. | Nanowire core-shell light pipes |
US8889455B2 (en) * | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US8546742B2 (en) * | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9047815B2 (en) | 2009-02-27 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
US8633873B2 (en) | 2009-11-12 | 2014-01-21 | Ignis Innovation Inc. | Stable fast programming scheme for displays |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
CN103688302B (zh) | 2011-05-17 | 2016-06-29 | 伊格尼斯创新公司 | 用于显示系统的使用动态功率控制的系统和方法 |
US8629063B2 (en) * | 2011-06-08 | 2014-01-14 | International Business Machines Corporation | Forming features on a substrate having varying feature densities |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US8658444B2 (en) * | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
US20130335312A1 (en) * | 2012-06-15 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | Integration of thin film switching device with electromechanical systems device |
KR20140070142A (ko) * | 2012-11-30 | 2014-06-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
CN105247462A (zh) | 2013-03-15 | 2016-01-13 | 伊格尼斯创新公司 | Amoled显示器的触摸分辨率的动态调整 |
US9059123B2 (en) | 2013-07-24 | 2015-06-16 | International Business Machines Corporation | Active matrix using hybrid integrated circuit and bipolar transistor |
CN104425544B (zh) * | 2013-09-09 | 2017-07-07 | 瀚宇彩晶股份有限公司 | 有机发光二极管显示器的像素结构 |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
WO2016067590A1 (ja) * | 2014-10-29 | 2016-05-06 | 凸版印刷株式会社 | 薄膜トランジスタおよびその製造方法 |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
CN104659038A (zh) * | 2015-03-13 | 2015-05-27 | 京东方科技集团股份有限公司 | 显示背板及其制作方法、显示装置 |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
US9721812B2 (en) * | 2015-11-20 | 2017-08-01 | International Business Machines Corporation | Optical device with precoated underfill |
DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
CN107331689A (zh) * | 2017-07-21 | 2017-11-07 | 京东方科技集团股份有限公司 | 发光结构、显示装置及其制作方法 |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
CN107623087A (zh) * | 2017-10-30 | 2018-01-23 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板及其制备方法 |
TWI642176B (zh) * | 2018-01-15 | 2018-11-21 | 友達光電股份有限公司 | 陣列基板以及顯示面板 |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
JP6926169B2 (ja) * | 2018-03-28 | 2021-08-25 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
US11349052B2 (en) * | 2019-02-05 | 2022-05-31 | Facebook Technologies, Llc | Bonding interface for hybrid TFT-based micro display projector |
WO2020208774A1 (ja) * | 2019-04-11 | 2020-10-15 | シャープ株式会社 | 発光素子および表示装置 |
CN111584567B (zh) * | 2020-05-11 | 2022-08-23 | 武汉华星光电半导体显示技术有限公司 | 显示装置及其制备方法 |
CN112582381B (zh) * | 2020-12-10 | 2023-09-26 | 武汉华星光电半导体显示技术有限公司 | 触控显示面板及其制备方法 |
Family Cites Families (374)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354162A (en) | 1981-02-09 | 1982-10-12 | National Semiconductor Corporation | Wide dynamic range control amplifier with offset correction |
JPS61110198A (ja) | 1984-11-05 | 1986-05-28 | 株式会社東芝 | マトリクス形表示装置 |
JPS61161093A (ja) | 1985-01-09 | 1986-07-21 | Sony Corp | ダイナミツクユニフオミテイ補正装置 |
EP0269744B1 (en) | 1986-05-13 | 1994-12-14 | Sanyo Electric Co., Ltd | Circuit for driving an image display device |
US6323832B1 (en) | 1986-09-27 | 2001-11-27 | Junichi Nishizawa | Color display device |
JP2623087B2 (ja) | 1986-09-27 | 1997-06-25 | 潤一 西澤 | カラーディスプレー装置 |
US4975691A (en) | 1987-06-16 | 1990-12-04 | Interstate Electronics Corporation | Scan inversion symmetric drive |
US4963860A (en) | 1988-02-01 | 1990-10-16 | General Electric Company | Integrated matrix display circuitry |
US4996523A (en) | 1988-10-20 | 1991-02-26 | Eastman Kodak Company | Electroluminescent storage display with improved intensity driver circuits |
EP0462333B1 (en) | 1990-06-11 | 1994-08-31 | International Business Machines Corporation | Display system |
US5222082A (en) | 1991-02-28 | 1993-06-22 | Thomson Consumer Electronics, S.A. | Shift register useful as a select line scanner for liquid crystal display |
JP3163637B2 (ja) | 1991-03-19 | 2001-05-08 | 株式会社日立製作所 | 液晶表示装置の駆動方法 |
US5280280A (en) | 1991-05-24 | 1994-01-18 | Robert Hotto | DC integrating display driver employing pixel status memories |
US5589847A (en) | 1991-09-23 | 1996-12-31 | Xerox Corporation | Switched capacitor analog circuits using polysilicon thin film technology |
US5266515A (en) | 1992-03-02 | 1993-11-30 | Motorola, Inc. | Fabricating dual gate thin film transistors |
CN1123577A (zh) | 1993-04-05 | 1996-05-29 | 西尔拉斯逻辑公司 | 液晶显示器中串扰的补偿方法和设备 |
JPH06347753A (ja) | 1993-04-30 | 1994-12-22 | Prime View Hk Ltd | アモルファス・シリコン薄膜トランジスタ装置の閾値電圧を回復するための方法と装置 |
JPH0799321A (ja) | 1993-05-27 | 1995-04-11 | Sony Corp | 薄膜半導体素子の製造方法および製造装置 |
US5712653A (en) | 1993-12-27 | 1998-01-27 | Sharp Kabushiki Kaisha | Image display scanning circuit with outputs from sequentially switched pulse signals |
US5714968A (en) | 1994-08-09 | 1998-02-03 | Nec Corporation | Current-dependent light-emitting element drive circuit for use in active matrix display device |
US5747928A (en) | 1994-10-07 | 1998-05-05 | Iowa State University Research Foundation, Inc. | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
US5498880A (en) | 1995-01-12 | 1996-03-12 | E. I. Du Pont De Nemours And Company | Image capture panel using a solid state device |
US5686935A (en) | 1995-03-06 | 1997-11-11 | Thomson Consumer Electronics, S.A. | Data line drivers with column initialization transistor |
US5619033A (en) | 1995-06-07 | 1997-04-08 | Xerox Corporation | Layered solid state photodiode sensor array |
US5748160A (en) | 1995-08-21 | 1998-05-05 | Mororola, Inc. | Active driven LED matrices |
JP3272209B2 (ja) | 1995-09-07 | 2002-04-08 | アルプス電気株式会社 | Lcd駆動回路 |
JPH0990405A (ja) | 1995-09-21 | 1997-04-04 | Sharp Corp | 薄膜トランジスタ |
US5790234A (en) | 1995-12-27 | 1998-08-04 | Canon Kabushiki Kaisha | Eyeball detection apparatus |
US5923794A (en) | 1996-02-06 | 1999-07-13 | Polaroid Corporation | Current-mediated active-pixel image sensing device with current reset |
JP3266177B2 (ja) | 1996-09-04 | 2002-03-18 | 住友電気工業株式会社 | 電流ミラー回路とそれを用いた基準電圧発生回路及び発光素子駆動回路 |
JP3027126B2 (ja) | 1996-11-26 | 2000-03-27 | 松下電器産業株式会社 | 液晶表示装置 |
US6046716A (en) | 1996-12-19 | 2000-04-04 | Colorado Microdisplay, Inc. | Display system having electrode modulation to alter a state of an electro-optic layer |
US5874803A (en) | 1997-09-09 | 1999-02-23 | The Trustees Of Princeton University | Light emitting device with stack of OLEDS and phosphor downconverter |
JPH10209854A (ja) | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | ボディ電圧制御型半導体集積回路 |
US5990629A (en) | 1997-01-28 | 1999-11-23 | Casio Computer Co., Ltd. | Electroluminescent display device and a driving method thereof |
US5917280A (en) | 1997-02-03 | 1999-06-29 | The Trustees Of Princeton University | Stacked organic light emitting devices |
JPH10254410A (ja) | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス表示装置及びその駆動方法 |
DE69825402T2 (de) | 1997-03-12 | 2005-08-04 | Seiko Epson Corp. | Pixelschaltung, anzeigevorrichtung und elektronische apparatur mit stromgesteuerter lichtemittierender vorrichtung |
US5903248A (en) | 1997-04-11 | 1999-05-11 | Spatialight, Inc. | Active matrix display having pixel driving circuits with integrated charge pumps |
US5952789A (en) | 1997-04-14 | 1999-09-14 | Sarnoff Corporation | Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor |
US5815303A (en) | 1997-06-26 | 1998-09-29 | Xerox Corporation | Fault tolerant projective display having redundant light modulators |
US6023259A (en) | 1997-07-11 | 2000-02-08 | Fed Corporation | OLED active matrix using a single transistor current mode pixel design |
KR100242244B1 (ko) | 1997-08-09 | 2000-02-01 | 구본준 | 스캐닝 회로 |
JP3580092B2 (ja) | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
US20010043173A1 (en) | 1997-09-04 | 2001-11-22 | Ronald Roy Troutman | Field sequential gray in active matrix led display using complementary transistor pixel circuits |
US6300944B1 (en) | 1997-09-12 | 2001-10-09 | Micron Technology, Inc. | Alternative power for a portable computer via solar cells |
US6738035B1 (en) | 1997-09-22 | 2004-05-18 | Nongqiang Fan | Active matrix LCD based on diode switches and methods of improving display uniformity of same |
US6229508B1 (en) | 1997-09-29 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
US6909419B2 (en) | 1997-10-31 | 2005-06-21 | Kopin Corporation | Portable microdisplay system |
TW491954B (en) | 1997-11-10 | 2002-06-21 | Hitachi Device Eng | Liquid crystal display device |
JP3552500B2 (ja) | 1997-11-12 | 2004-08-11 | セイコーエプソン株式会社 | 論理振幅レベル変換回路,液晶装置及び電子機器 |
US6069365A (en) | 1997-11-25 | 2000-05-30 | Alan Y. Chow | Optical processor based imaging system |
JPH11231805A (ja) | 1998-02-10 | 1999-08-27 | Sanyo Electric Co Ltd | 表示装置 |
JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
US6259424B1 (en) | 1998-03-04 | 2001-07-10 | Victor Company Of Japan, Ltd. | Display matrix substrate, production method of the same and display matrix circuit |
US6097360A (en) | 1998-03-19 | 2000-08-01 | Holloman; Charles J | Analog driver for LED or similar display element |
JP3252897B2 (ja) | 1998-03-31 | 2002-02-04 | 日本電気株式会社 | 素子駆動装置および方法、画像表示装置 |
JP3702096B2 (ja) | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
CA2242720C (en) | 1998-07-09 | 2000-05-16 | Ibm Canada Limited-Ibm Canada Limitee | Programmable led driver |
JP2953465B1 (ja) | 1998-08-14 | 1999-09-27 | 日本電気株式会社 | 定電流駆動回路 |
US6316786B1 (en) | 1998-08-29 | 2001-11-13 | International Business Machines Corporation | Organic opto-electronic devices |
JP3644830B2 (ja) | 1998-09-01 | 2005-05-11 | パイオニア株式会社 | 有機エレクトロルミネッセンスパネルとその製造方法 |
JP3648999B2 (ja) | 1998-09-11 | 2005-05-18 | セイコーエプソン株式会社 | 液晶表示装置、電子機器および液晶層の電圧検出方法 |
US6166489A (en) | 1998-09-15 | 2000-12-26 | The Trustees Of Princeton University | Light emitting device using dual light emitting stacks to achieve full-color emission |
US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6617644B1 (en) | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US7141821B1 (en) | 1998-11-10 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture |
US7022556B1 (en) | 1998-11-11 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Exposure device, exposure method and method of manufacturing semiconductor device |
US6518594B1 (en) | 1998-11-16 | 2003-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices |
US6512271B1 (en) | 1998-11-16 | 2003-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6489952B1 (en) | 1998-11-17 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type semiconductor display device |
US6909114B1 (en) | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
US6420758B1 (en) | 1998-11-17 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity region overlapping a gate electrode |
US6365917B1 (en) | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6420988B1 (en) | 1998-12-03 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Digital analog converter and electronic device using the same |
JP2000174282A (ja) | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
EP1006589B1 (en) | 1998-12-03 | 2012-04-11 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
KR20020006019A (ko) | 1998-12-14 | 2002-01-18 | 도날드 피. 게일 | 휴대용 마이크로디스플레이 시스템 |
US6524895B2 (en) | 1998-12-25 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6573195B1 (en) | 1999-01-26 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere |
JP3686769B2 (ja) | 1999-01-29 | 2005-08-24 | 日本電気株式会社 | 有機el素子駆動装置と駆動方法 |
JP2000231346A (ja) | 1999-02-09 | 2000-08-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
US7697052B1 (en) | 1999-02-17 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Electronic view finder utilizing an organic electroluminescence display |
US6576926B1 (en) | 1999-02-23 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6157583A (en) | 1999-03-02 | 2000-12-05 | Motorola, Inc. | Integrated circuit memory having a fuse detect circuit and method therefor |
US6306694B1 (en) | 1999-03-12 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device |
US6468638B2 (en) | 1999-03-16 | 2002-10-22 | Alien Technology Corporation | Web process interconnect in electronic assemblies |
US6531713B1 (en) | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
US7402467B1 (en) | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6399988B1 (en) | 1999-03-26 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having lightly doped regions |
US6861670B1 (en) | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
US6878968B1 (en) | 1999-05-10 | 2005-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6690344B1 (en) | 1999-05-14 | 2004-02-10 | Ngk Insulators, Ltd. | Method and apparatus for driving device and display |
JP3289276B2 (ja) | 1999-05-27 | 2002-06-04 | 日本電気株式会社 | 半導体装置 |
KR100296113B1 (ko) | 1999-06-03 | 2001-07-12 | 구본준, 론 위라하디락사 | 전기발광소자 |
JP4337171B2 (ja) * | 1999-06-14 | 2009-09-30 | ソニー株式会社 | 表示装置 |
JP4092857B2 (ja) | 1999-06-17 | 2008-05-28 | ソニー株式会社 | 画像表示装置 |
KR100888004B1 (ko) | 1999-07-14 | 2009-03-09 | 소니 가부시끼 가이샤 | 전류 구동 회로 및 그것을 사용한 표시 장치, 화소 회로,및 구동 방법 |
US7379039B2 (en) | 1999-07-14 | 2008-05-27 | Sony Corporation | Current drive circuit and display device using same pixel circuit, and drive method |
EP1129446A1 (en) | 1999-09-11 | 2001-09-05 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
US6641933B1 (en) | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
WO2001027910A1 (en) | 1999-10-12 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Led display device |
US6587086B1 (en) * | 1999-10-26 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6392617B1 (en) | 1999-10-27 | 2002-05-21 | Agilent Technologies, Inc. | Active matrix light emitting diode display |
US6384427B1 (en) | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US6573584B1 (en) * | 1999-10-29 | 2003-06-03 | Kyocera Corporation | Thin film electronic device and circuit board mounting the same |
JP2001284168A (ja) * | 2000-03-31 | 2001-10-12 | Kyocera Corp | 薄膜電子部品および基板 |
KR100685307B1 (ko) | 1999-11-05 | 2007-02-22 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 |
JP2001147659A (ja) | 1999-11-18 | 2001-05-29 | Sony Corp | 表示装置 |
JP4727029B2 (ja) * | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | El表示装置、電気器具及びel表示装置用の半導体素子基板 |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
TW511298B (en) | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
US6307322B1 (en) | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
US6809710B2 (en) | 2000-01-21 | 2004-10-26 | Emagin Corporation | Gray scale pixel driver for electronic display and method of operation therefor |
US20030147017A1 (en) | 2000-02-15 | 2003-08-07 | Jean-Daniel Bonny | Display device with multiple row addressing |
US6780687B2 (en) | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
US6856307B2 (en) | 2000-02-01 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and method of driving the same |
US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP3523139B2 (ja) | 2000-02-07 | 2004-04-26 | 日本電気株式会社 | 可変利得回路 |
JP2001230664A (ja) | 2000-02-15 | 2001-08-24 | Mitsubishi Electric Corp | 半導体集積回路 |
US6414661B1 (en) | 2000-02-22 | 2002-07-02 | Sarnoff Corporation | Method and apparatus for calibrating display devices and automatically compensating for loss in their efficiency over time |
CN1366614A (zh) | 2000-02-23 | 2002-08-28 | 皇家菲利浦电子有限公司 | 带测试接口的集成电路 |
JP2001318627A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP3495311B2 (ja) | 2000-03-24 | 2004-02-09 | Necエレクトロニクス株式会社 | クロック制御回路 |
TW521226B (en) | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
TW484238B (en) | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
JP2001284592A (ja) | 2000-03-29 | 2001-10-12 | Sony Corp | 薄膜半導体装置及びその駆動方法 |
GB0008019D0 (en) | 2000-03-31 | 2000-05-17 | Koninkl Philips Electronics Nv | Display device having current-addressed pixels |
US6528950B2 (en) | 2000-04-06 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method |
US6706544B2 (en) | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
US6611108B2 (en) * | 2000-04-26 | 2003-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method thereof |
US6583576B2 (en) | 2000-05-08 | 2003-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, and electric device using the same |
US6605993B2 (en) | 2000-05-16 | 2003-08-12 | Fujitsu Limited | Operational amplifier circuit |
TW493153B (en) | 2000-05-22 | 2002-07-01 | Koninkl Philips Electronics Nv | Display device |
EP1158483A3 (en) | 2000-05-24 | 2003-02-05 | Eastman Kodak Company | Solid-state display with reference pixel |
US20020030647A1 (en) | 2000-06-06 | 2002-03-14 | Michael Hack | Uniform active matrix oled displays |
EP1292307A2 (en) | 2000-06-09 | 2003-03-19 | The Regents of The University of California | Method of treating pain using nalbuphine and opioid antagonists |
JP2001356741A (ja) | 2000-06-14 | 2001-12-26 | Sanyo Electric Co Ltd | レベルシフタ及びそれを用いたアクティブマトリクス型表示装置 |
JP3723747B2 (ja) | 2000-06-16 | 2005-12-07 | 松下電器産業株式会社 | 表示装置およびその駆動方法 |
JP4831889B2 (ja) | 2000-06-22 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3877049B2 (ja) | 2000-06-27 | 2007-02-07 | 株式会社日立製作所 | 画像表示装置及びその駆動方法 |
US6738034B2 (en) | 2000-06-27 | 2004-05-18 | Hitachi, Ltd. | Picture image display device and method of driving the same |
TW502854U (en) | 2000-07-20 | 2002-09-11 | Koninkl Philips Electronics Nv | Display device |
JP4123711B2 (ja) | 2000-07-24 | 2008-07-23 | セイコーエプソン株式会社 | 電気光学パネルの駆動方法、電気光学装置、および電子機器 |
US6760005B2 (en) | 2000-07-25 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit of a display device |
JP4014831B2 (ja) * | 2000-09-04 | 2007-11-28 | 株式会社半導体エネルギー研究所 | El表示装置及びその駆動方法 |
US6873320B2 (en) | 2000-09-05 | 2005-03-29 | Kabushiki Kaisha Toshiba | Display device and driving method thereof |
JP4830189B2 (ja) * | 2000-09-12 | 2011-12-07 | ソニー株式会社 | 薄膜トランジスタの製造方法、液晶表示装置の製造方法及びエレクトロルミネッセンス表示装置の製造方法 |
JP3838063B2 (ja) | 2000-09-29 | 2006-10-25 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の駆動方法 |
JP2002162934A (ja) | 2000-09-29 | 2002-06-07 | Eastman Kodak Co | 発光フィードバックのフラットパネルディスプレイ |
US7315295B2 (en) | 2000-09-29 | 2008-01-01 | Seiko Epson Corporation | Driving method for electro-optical device, electro-optical device, and electronic apparatus |
JP3695308B2 (ja) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
TW550530B (en) | 2000-10-27 | 2003-09-01 | Semiconductor Energy Lab | Display device and method of driving the same |
JP3902938B2 (ja) | 2000-10-31 | 2007-04-11 | キヤノン株式会社 | 有機発光素子の製造方法及び有機発光表示体の製造方法、有機発光素子及び有機発光表示体 |
US6320325B1 (en) | 2000-11-06 | 2001-11-20 | Eastman Kodak Company | Emissive display with luminance feedback from a representative pixel |
JP3620490B2 (ja) * | 2000-11-22 | 2005-02-16 | ソニー株式会社 | アクティブマトリクス型表示装置 |
JP2002268576A (ja) | 2000-12-05 | 2002-09-20 | Matsushita Electric Ind Co Ltd | 画像表示装置、画像表示装置の製造方法及び画像表示ドライバic |
TW518532B (en) | 2000-12-26 | 2003-01-21 | Hannstar Display Corp | Driving circuit of gate control line and method |
TW561445B (en) | 2001-01-02 | 2003-11-11 | Chi Mei Optoelectronics Corp | OLED active driving system with current feedback |
US6580657B2 (en) | 2001-01-04 | 2003-06-17 | International Business Machines Corporation | Low-power organic light emitting diode pixel circuit |
JP3593982B2 (ja) | 2001-01-15 | 2004-11-24 | ソニー株式会社 | アクティブマトリクス型表示装置およびアクティブマトリクス型有機エレクトロルミネッセンス表示装置、並びにそれらの駆動方法 |
US6323631B1 (en) | 2001-01-18 | 2001-11-27 | Sunplus Technology Co., Ltd. | Constant current driver with auto-clamped pre-charge function |
JP2002215063A (ja) * | 2001-01-19 | 2002-07-31 | Sony Corp | アクティブマトリクス型表示装置 |
CA2436451A1 (en) | 2001-02-05 | 2002-08-15 | International Business Machines Corporation | Liquid crystal display device |
CA2438577C (en) | 2001-02-16 | 2006-08-22 | Ignis Innovation Inc. | Pixel current driver for organic light emitting diode displays |
EP2180508A3 (en) | 2001-02-16 | 2012-04-25 | Ignis Innovation Inc. | Pixel driver circuit for organic light emitting device |
CA2438581C (en) * | 2001-02-16 | 2005-11-29 | Ignis Innovation Inc. | Organic light emitting diode display having shield electrodes |
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
SG143942A1 (en) * | 2001-02-19 | 2008-07-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4223218B2 (ja) * | 2001-02-19 | 2009-02-12 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP4212815B2 (ja) | 2001-02-21 | 2009-01-21 | 株式会社半導体エネルギー研究所 | 発光装置 |
US6753654B2 (en) | 2001-02-21 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance |
CN100428592C (zh) | 2001-03-05 | 2008-10-22 | 富士施乐株式会社 | 发光元件驱动装置和发光元件驱动系统 |
US6597203B2 (en) | 2001-03-14 | 2003-07-22 | Micron Technology, Inc. | CMOS gate array with vertical transistors |
JP2002278513A (ja) | 2001-03-19 | 2002-09-27 | Sharp Corp | 電気光学装置 |
US6661180B2 (en) * | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
JP3788916B2 (ja) | 2001-03-30 | 2006-06-21 | 株式会社日立製作所 | 発光型表示装置 |
US7136058B2 (en) | 2001-04-27 | 2006-11-14 | Kabushiki Kaisha Toshiba | Display apparatus, digital-to-analog conversion circuit and digital-to-analog conversion method |
US6943761B2 (en) | 2001-05-09 | 2005-09-13 | Clare Micronix Integrated Systems, Inc. | System for providing pulse amplitude modulation for OLED display drivers |
US6594606B2 (en) | 2001-05-09 | 2003-07-15 | Clare Micronix Integrated Systems, Inc. | Matrix element voltage sensing for precharge |
JP4090786B2 (ja) * | 2001-05-22 | 2008-05-28 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2002351409A (ja) | 2001-05-23 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | 液晶表示装置、液晶ディスプレイ駆動回路、液晶ディスプレイの駆動方法、およびプログラム |
US7012588B2 (en) | 2001-06-05 | 2006-03-14 | Eastman Kodak Company | Method for saving power in an organic electroluminescent display using white light emitting elements |
KR100437765B1 (ko) * | 2001-06-15 | 2004-06-26 | 엘지전자 주식회사 | 고온용 기판을 이용한 박막트랜지스터 제조방법과 이를 이용한 표시장치의 제조방법 |
KR100743103B1 (ko) | 2001-06-22 | 2007-07-27 | 엘지.필립스 엘시디 주식회사 | 일렉트로 루미네센스 패널 |
US6734636B2 (en) | 2001-06-22 | 2004-05-11 | International Business Machines Corporation | OLED current drive pixel circuit |
US6956547B2 (en) | 2001-06-30 | 2005-10-18 | Lg.Philips Lcd Co., Ltd. | Driving circuit and method of driving an organic electroluminescence device |
JP2003022035A (ja) | 2001-07-10 | 2003-01-24 | Sharp Corp | 有機elパネルおよびその製造方法 |
JP2003043994A (ja) | 2001-07-27 | 2003-02-14 | Canon Inc | アクティブマトリックス型ディスプレイ |
JP3800050B2 (ja) | 2001-08-09 | 2006-07-19 | 日本電気株式会社 | 表示装置の駆動回路 |
DE10140991C2 (de) | 2001-08-21 | 2003-08-21 | Osram Opto Semiconductors Gmbh | Organische Leuchtdiode mit Energieversorgung, Herstellungsverfahren dazu und Anwendungen |
CN100371962C (zh) | 2001-08-29 | 2008-02-27 | 株式会社半导体能源研究所 | 发光器件、发光器件驱动方法、以及电子设备 |
US7027015B2 (en) | 2001-08-31 | 2006-04-11 | Intel Corporation | Compensating organic light emitting device displays for color variations |
JP2003076331A (ja) | 2001-08-31 | 2003-03-14 | Seiko Epson Corp | 表示装置および電子機器 |
JP4197647B2 (ja) | 2001-09-21 | 2008-12-17 | 株式会社半導体エネルギー研究所 | 表示装置及び半導体装置 |
SG120889A1 (en) | 2001-09-28 | 2006-04-26 | Semiconductor Energy Lab | A light emitting device and electronic apparatus using the same |
SG120888A1 (en) | 2001-09-28 | 2006-04-26 | Semiconductor Energy Lab | A light emitting device and electronic apparatus using the same |
US20030071821A1 (en) | 2001-10-11 | 2003-04-17 | Sundahl Robert C. | Luminance compensation for emissive displays |
WO2003034389A2 (en) | 2001-10-19 | 2003-04-24 | Clare Micronix Integrated Systems, Inc. | System and method for providing pulse amplitude modulation for oled display drivers |
US20030169219A1 (en) | 2001-10-19 | 2003-09-11 | Lechevalier Robert | System and method for exposure timing compensation for row resistance |
AU2002349965A1 (en) | 2001-10-19 | 2003-04-28 | Clare Micronix Integrated Systems, Inc. | Circuit for predictive control of boost current in a passive matrix oled display and method therefor |
US6861810B2 (en) | 2001-10-23 | 2005-03-01 | Fpd Systems | Organic electroluminescent display device driving method and apparatus |
KR100940342B1 (ko) | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
TW518543B (en) | 2001-11-14 | 2003-01-21 | Ind Tech Res Inst | Integrated current driving framework of active matrix OLED |
JP4251801B2 (ja) | 2001-11-15 | 2009-04-08 | パナソニック株式会社 | El表示装置およびel表示装置の駆動方法 |
US7071932B2 (en) | 2001-11-20 | 2006-07-04 | Toppoly Optoelectronics Corporation | Data voltage current drive amoled pixel circuit |
JP4050503B2 (ja) | 2001-11-29 | 2008-02-20 | 株式会社日立製作所 | 表示装置 |
JP4009097B2 (ja) | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP2003177709A (ja) | 2001-12-13 | 2003-06-27 | Seiko Epson Corp | 発光素子用の画素回路 |
JP3800404B2 (ja) | 2001-12-19 | 2006-07-26 | 株式会社日立製作所 | 画像表示装置 |
GB0130411D0 (en) | 2001-12-20 | 2002-02-06 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display device |
CN1293421C (zh) | 2001-12-27 | 2007-01-03 | Lg.菲利浦Lcd株式会社 | 电致发光显示面板及用于操作它的方法 |
US7274363B2 (en) | 2001-12-28 | 2007-09-25 | Pioneer Corporation | Panel display driving device and driving method |
JP2003195810A (ja) | 2001-12-28 | 2003-07-09 | Casio Comput Co Ltd | 駆動回路、駆動装置及び光学要素の駆動方法 |
CN100511366C (zh) | 2002-01-17 | 2009-07-08 | 日本电气株式会社 | 具有矩阵型电流负载驱动电路的半导体器件及其驱动方法 |
TWI258317B (en) * | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
US20030140958A1 (en) | 2002-01-28 | 2003-07-31 | Cheng-Chieh Yang | Solar photoelectric module |
JP2003295825A (ja) | 2002-02-04 | 2003-10-15 | Sanyo Electric Co Ltd | 表示装置 |
JP4310984B2 (ja) * | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | 有機発光表示装置 |
US6720942B2 (en) | 2002-02-12 | 2004-04-13 | Eastman Kodak Company | Flat-panel light emitting pixel with luminance feedback |
JP2003308046A (ja) | 2002-02-18 | 2003-10-31 | Sanyo Electric Co Ltd | 表示装置 |
WO2003075256A1 (fr) | 2002-03-05 | 2003-09-12 | Nec Corporation | Affichage d'image et procede de commande |
JP3613253B2 (ja) | 2002-03-14 | 2005-01-26 | 日本電気株式会社 | 電流制御素子の駆動回路及び画像表示装置 |
WO2003077231A2 (en) | 2002-03-13 | 2003-09-18 | Koninklijke Philips Electronics N.V. | Two sided display device |
TW594617B (en) * | 2002-03-13 | 2004-06-21 | Sanyo Electric Co | Organic EL display panel and method for making the same |
GB2386462A (en) | 2002-03-14 | 2003-09-17 | Cambridge Display Tech Ltd | Display driver circuits |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
JP4266682B2 (ja) | 2002-03-29 | 2009-05-20 | セイコーエプソン株式会社 | 電子装置、電子装置の駆動方法、電気光学装置及び電子機器 |
US6806497B2 (en) | 2002-03-29 | 2004-10-19 | Seiko Epson Corporation | Electronic device, method for driving the electronic device, electro-optical device, and electronic equipment |
KR100488835B1 (ko) | 2002-04-04 | 2005-05-11 | 산요덴키가부시키가이샤 | 반도체 장치 및 표시 장치 |
US6911781B2 (en) | 2002-04-23 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and production system of the same |
JP3637911B2 (ja) | 2002-04-24 | 2005-04-13 | セイコーエプソン株式会社 | 電子装置、電子機器、および電子装置の駆動方法 |
DE10221301B4 (de) | 2002-05-14 | 2004-07-29 | Junghans Uhren Gmbh | Vorrichtung mit Solarzellenanordnung und Flüssigkristallanzeige |
US7474285B2 (en) | 2002-05-17 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display apparatus and driving method thereof |
JP3972359B2 (ja) | 2002-06-07 | 2007-09-05 | カシオ計算機株式会社 | 表示装置 |
JP2004070293A (ja) | 2002-06-12 | 2004-03-04 | Seiko Epson Corp | 電子装置、電子装置の駆動方法及び電子機器 |
US20030230980A1 (en) | 2002-06-18 | 2003-12-18 | Forrest Stephen R | Very low voltage, high efficiency phosphorescent oled in a p-i-n structure |
GB2389951A (en) | 2002-06-18 | 2003-12-24 | Cambridge Display Tech Ltd | Display driver circuits for active matrix OLED displays |
ATE417364T1 (de) | 2002-06-21 | 2008-12-15 | Kyosemi Corp | Lichtempfangs- oder lichtemissionseinrichtung und verfahren zu ihrer herstellung |
JP3970110B2 (ja) | 2002-06-27 | 2007-09-05 | カシオ計算機株式会社 | 電流駆動装置及びその駆動方法並びに電流駆動装置を用いた表示装置 |
JP2004045488A (ja) | 2002-07-09 | 2004-02-12 | Casio Comput Co Ltd | 表示駆動装置及びその駆動制御方法 |
JP4115763B2 (ja) | 2002-07-10 | 2008-07-09 | パイオニア株式会社 | 表示装置及び表示方法 |
US20040150594A1 (en) | 2002-07-25 | 2004-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and drive method therefor |
TW569173B (en) | 2002-08-05 | 2004-01-01 | Etoms Electronics Corp | Driver for controlling display cycle of OLED and its method |
GB0219771D0 (en) | 2002-08-24 | 2002-10-02 | Koninkl Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
TW558699B (en) | 2002-08-28 | 2003-10-21 | Au Optronics Corp | Driving circuit and method for light emitting device |
JP4194451B2 (ja) | 2002-09-02 | 2008-12-10 | キヤノン株式会社 | 駆動回路及び表示装置及び情報表示装置 |
US7385572B2 (en) | 2002-09-09 | 2008-06-10 | E.I Du Pont De Nemours And Company | Organic electronic device having improved homogeneity |
TW588468B (en) | 2002-09-19 | 2004-05-21 | Ind Tech Res Inst | Pixel structure of active matrix organic light-emitting diode |
JP4230746B2 (ja) | 2002-09-30 | 2009-02-25 | パイオニア株式会社 | 表示装置及び表示パネルの駆動方法 |
GB0223304D0 (en) | 2002-10-08 | 2002-11-13 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
JP3832415B2 (ja) | 2002-10-11 | 2006-10-11 | ソニー株式会社 | アクティブマトリクス型表示装置 |
KR100460210B1 (ko) * | 2002-10-29 | 2004-12-04 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
KR100476368B1 (ko) | 2002-11-05 | 2005-03-17 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광 표시패널의 데이터 구동 장치 및 방법 |
US6687266B1 (en) | 2002-11-08 | 2004-02-03 | Universal Display Corporation | Organic light emitting materials and devices |
JP2004157467A (ja) | 2002-11-08 | 2004-06-03 | Tohoku Pioneer Corp | アクティブ型発光表示パネルの駆動方法および駆動装置 |
JP3707484B2 (ja) | 2002-11-27 | 2005-10-19 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法および電子機器 |
JP3873149B2 (ja) | 2002-12-11 | 2007-01-24 | 株式会社日立製作所 | 表示装置 |
JP2004191752A (ja) | 2002-12-12 | 2004-07-08 | Seiko Epson Corp | 電気光学装置、電気光学装置の駆動方法および電子機器 |
TWI228941B (en) | 2002-12-27 | 2005-03-01 | Au Optronics Corp | Active matrix organic light emitting diode display and fabricating method thereof |
JP4865986B2 (ja) | 2003-01-10 | 2012-02-01 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 有機el表示装置 |
US7079091B2 (en) | 2003-01-14 | 2006-07-18 | Eastman Kodak Company | Compensating for aging in OLED devices |
JP2004246320A (ja) | 2003-01-20 | 2004-09-02 | Sanyo Electric Co Ltd | アクティブマトリクス駆動型表示装置 |
KR100490622B1 (ko) | 2003-01-21 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 및 그 구동방법과 픽셀회로 |
US7161566B2 (en) | 2003-01-31 | 2007-01-09 | Eastman Kodak Company | OLED display with aging compensation |
JP4048969B2 (ja) | 2003-02-12 | 2008-02-20 | セイコーエプソン株式会社 | 電気光学装置の駆動方法及び電子機器 |
JP4378087B2 (ja) | 2003-02-19 | 2009-12-02 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
CA2419704A1 (en) * | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
US7612749B2 (en) | 2003-03-04 | 2009-11-03 | Chi Mei Optoelectronics Corporation | Driving circuits for displays |
JP3925435B2 (ja) | 2003-03-05 | 2007-06-06 | カシオ計算機株式会社 | 発光駆動回路及び表示装置並びにその駆動制御方法 |
TWI224300B (en) | 2003-03-07 | 2004-11-21 | Au Optronics Corp | Data driver and related method used in a display device for saving space |
TWI228696B (en) | 2003-03-21 | 2005-03-01 | Ind Tech Res Inst | Pixel circuit for active matrix OLED and driving method |
KR100502912B1 (ko) | 2003-04-01 | 2005-07-21 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 표시 패널과 구동 방법 |
US7026597B2 (en) | 2003-04-09 | 2006-04-11 | Eastman Kodak Company | OLED display with integrated elongated photosensor |
JP3991003B2 (ja) | 2003-04-09 | 2007-10-17 | 松下電器産業株式会社 | 表示装置およびソース駆動回路 |
JP4530622B2 (ja) | 2003-04-10 | 2010-08-25 | Okiセミコンダクタ株式会社 | 表示パネルの駆動装置 |
CA2522396A1 (en) | 2003-04-25 | 2004-11-11 | Visioneered Image Systems, Inc. | Led illumination source/display with individual led brightness monitoring capability and calibration method |
US6771028B1 (en) | 2003-04-30 | 2004-08-03 | Eastman Kodak Company | Drive circuitry for four-color organic light-emitting device |
KR20070024733A (ko) | 2003-05-07 | 2007-03-02 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | El 표시 장치 및 el 표시 장치의 구동 방법 |
JP4484451B2 (ja) | 2003-05-16 | 2010-06-16 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
JP4049018B2 (ja) | 2003-05-19 | 2008-02-20 | ソニー株式会社 | 画素回路、表示装置、および画素回路の駆動方法 |
JP3772889B2 (ja) | 2003-05-19 | 2006-05-10 | セイコーエプソン株式会社 | 電気光学装置およびその駆動装置 |
EP1814100A3 (en) | 2003-05-23 | 2008-03-05 | Barco, naamloze vennootschap. | Method for displaying images on a large-screen organic light-emitting diode display, and display used therefore |
US20040257352A1 (en) | 2003-06-18 | 2004-12-23 | Nuelight Corporation | Method and apparatus for controlling |
US7262753B2 (en) | 2003-08-07 | 2007-08-28 | Barco N.V. | Method and system for measuring and controlling an OLED display element for improved lifetime and light output |
JP2005057217A (ja) | 2003-08-07 | 2005-03-03 | Renesas Technology Corp | 半導体集積回路装置 |
JP4342870B2 (ja) | 2003-08-11 | 2009-10-14 | 株式会社 日立ディスプレイズ | 有機el表示装置 |
JP2005099715A (ja) | 2003-08-29 | 2005-04-14 | Seiko Epson Corp | 電子回路の駆動方法、電子回路、電子装置、電気光学装置、電子機器および電子装置の駆動方法 |
GB0320503D0 (en) | 2003-09-02 | 2003-10-01 | Koninkl Philips Electronics Nv | Active maxtrix display devices |
US8537081B2 (en) | 2003-09-17 | 2013-09-17 | Hitachi Displays, Ltd. | Display apparatus and display control method |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
US7038392B2 (en) | 2003-09-26 | 2006-05-02 | International Business Machines Corporation | Active-matrix light emitting display and method for obtaining threshold voltage compensation for same |
US7310077B2 (en) | 2003-09-29 | 2007-12-18 | Michael Gillis Kane | Pixel circuit for an active matrix organic light-emitting diode display |
JP4895490B2 (ja) | 2003-09-30 | 2012-03-14 | 三洋電機株式会社 | 有機elパネル |
TWI254898B (en) | 2003-10-02 | 2006-05-11 | Pioneer Corp | Display apparatus with active matrix display panel and method for driving same |
US7075316B2 (en) | 2003-10-02 | 2006-07-11 | Alps Electric Co., Ltd. | Capacitance detector circuit, capacitance detection method, and fingerprint sensor using the same |
JP4589614B2 (ja) | 2003-10-28 | 2010-12-01 | 株式会社 日立ディスプレイズ | 画像表示装置 |
US6937215B2 (en) | 2003-11-03 | 2005-08-30 | Wintek Corporation | Pixel driving circuit of an organic light emitting diode display panel |
US7224332B2 (en) | 2003-11-25 | 2007-05-29 | Eastman Kodak Company | Method of aging compensation in an OLED display |
US6995519B2 (en) | 2003-11-25 | 2006-02-07 | Eastman Kodak Company | OLED display with aging compensation |
US7339636B2 (en) | 2003-12-02 | 2008-03-04 | Motorola, Inc. | Color display and solar cell device |
US20060264143A1 (en) | 2003-12-08 | 2006-11-23 | Ritdisplay Corporation | Fabricating method of an organic electroluminescent device having solar cells |
US7514762B2 (en) | 2003-12-15 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
KR100580554B1 (ko) | 2003-12-30 | 2006-05-16 | 엘지.필립스 엘시디 주식회사 | 일렉트로-루미네센스 표시장치 및 그 구동방법 |
JP4263153B2 (ja) | 2004-01-30 | 2009-05-13 | Necエレクトロニクス株式会社 | 表示装置、表示装置の駆動回路およびその駆動回路用半導体デバイス |
US7502000B2 (en) | 2004-02-12 | 2009-03-10 | Canon Kabushiki Kaisha | Drive circuit and image forming apparatus using the same |
KR20050115346A (ko) | 2004-06-02 | 2005-12-07 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
US7173590B2 (en) | 2004-06-02 | 2007-02-06 | Sony Corporation | Pixel circuit, active matrix apparatus and display apparatus |
JP2005345992A (ja) | 2004-06-07 | 2005-12-15 | Chi Mei Electronics Corp | 表示装置 |
US20060044227A1 (en) | 2004-06-18 | 2006-03-02 | Eastman Kodak Company | Selecting adjustment for OLED drive voltage |
KR100578813B1 (ko) | 2004-06-29 | 2006-05-11 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 구동 방법 |
US20060007249A1 (en) | 2004-06-29 | 2006-01-12 | Damoder Reddy | Method for operating and individually controlling the luminance of each pixel in an emissive active-matrix display device |
CA2567076C (en) | 2004-06-29 | 2008-10-21 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
US7317433B2 (en) | 2004-07-16 | 2008-01-08 | E.I. Du Pont De Nemours And Company | Circuit for driving an electronic component and method of operating an electronic device having the circuit |
US7868856B2 (en) | 2004-08-20 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Data signal driver for light emitting display |
JP4622389B2 (ja) | 2004-08-30 | 2011-02-02 | ソニー株式会社 | 表示装置及びその駆動方法 |
US7589707B2 (en) | 2004-09-24 | 2009-09-15 | Chen-Jean Chou | Active matrix light emitting device display pixel circuit and drive method |
JP4111185B2 (ja) | 2004-10-19 | 2008-07-02 | セイコーエプソン株式会社 | 電気光学装置、その駆動方法及び電子機器 |
WO2006053424A1 (en) | 2004-11-16 | 2006-05-26 | Ignis Innovation Inc. | System and driving method for active matrix light emitting device display |
JP4865999B2 (ja) | 2004-11-19 | 2012-02-01 | 株式会社日立製作所 | 電界効果トランジスタの作製方法 |
US7116058B2 (en) | 2004-11-30 | 2006-10-03 | Wintek Corporation | Method of improving the stability of active matrix OLED displays driven by amorphous silicon thin-film transistors |
EP2688058A3 (en) | 2004-12-15 | 2014-12-10 | Ignis Innovation Inc. | Method and system for programming, calibrating and driving a light emitting device display |
CA2504571A1 (en) | 2005-04-12 | 2006-10-12 | Ignis Innovation Inc. | A fast method for compensation of non-uniformities in oled displays |
CA2590366C (en) | 2004-12-15 | 2008-09-09 | Ignis Innovation Inc. | Method and system for programming, calibrating and driving a light emitting device display |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
US7088051B1 (en) | 2005-04-08 | 2006-08-08 | Eastman Kodak Company | OLED display with control |
FR2884639A1 (fr) | 2005-04-14 | 2006-10-20 | Thomson Licensing Sa | Panneau d'affichage d'images a matrice active, dont les emetteurs sont alimentes par des generateurs de courant pilotables en tension |
JP2006302556A (ja) | 2005-04-18 | 2006-11-02 | Seiko Epson Corp | 半導体素子の製造方法、半導体素子、電子デバイスおよび電子機器 |
US20070008297A1 (en) | 2005-04-20 | 2007-01-11 | Bassetti Chester F | Method and apparatus for image based power control of drive circuitry of a display pixel |
TWI302281B (en) | 2005-05-23 | 2008-10-21 | Au Optronics Corp | Display unit, display array, display panel and display unit control method |
JP4996065B2 (ja) | 2005-06-15 | 2012-08-08 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 有機el表示装置の製造方法および有機el表示装置 |
KR101157979B1 (ko) | 2005-06-20 | 2012-06-25 | 엘지디스플레이 주식회사 | 유기발광다이오드 구동회로와 이를 이용한유기발광다이오드 표시장치 |
CN101203896B (zh) | 2005-06-23 | 2012-07-18 | 统宝香港控股有限公司 | 具有光电转换功能的显示装置 |
US7649513B2 (en) | 2005-06-25 | 2010-01-19 | Lg Display Co., Ltd | Organic light emitting diode display |
GB0513384D0 (en) | 2005-06-30 | 2005-08-03 | Dry Ice Ltd | Cooling receptacle |
KR101169053B1 (ko) | 2005-06-30 | 2012-07-26 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
TWI281360B (en) | 2005-08-31 | 2007-05-11 | Univision Technology Inc | Full color organic electroluminescent display device and method for fabricating the same |
EP1932136B1 (en) | 2005-09-15 | 2012-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
US20080055209A1 (en) | 2006-08-30 | 2008-03-06 | Eastman Kodak Company | Method and apparatus for uniformity and brightness correction in an amoled display |
JPWO2007060742A1 (ja) | 2005-11-28 | 2009-05-07 | 三菱電機株式会社 | 印刷マスクおよび太陽電池セル |
EP1971975B1 (en) | 2006-01-09 | 2015-10-21 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
DE202006005427U1 (de) | 2006-04-04 | 2006-06-08 | Emde, Thomas | Beleuchtungsvorrichtung |
JP5037858B2 (ja) | 2006-05-16 | 2012-10-03 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
JP2007317384A (ja) | 2006-05-23 | 2007-12-06 | Canon Inc | 有機el表示装置、その製造方法、リペア方法及びリペア装置 |
KR101245218B1 (ko) | 2006-06-22 | 2013-03-19 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 |
JP2008046377A (ja) | 2006-08-17 | 2008-02-28 | Sony Corp | 表示装置 |
JP4222426B2 (ja) | 2006-09-26 | 2009-02-12 | カシオ計算機株式会社 | 表示駆動装置及びその駆動方法、並びに、表示装置及びその駆動方法 |
US8094129B2 (en) | 2006-11-27 | 2012-01-10 | Microsoft Corporation | Touch sensing using shadow and reflective modes |
US7355574B1 (en) | 2007-01-24 | 2008-04-08 | Eastman Kodak Company | OLED display with aging and efficiency compensation |
WO2008117353A1 (ja) | 2007-03-22 | 2008-10-02 | Pioneer Corporation | 有機電界発光素子、有機電界発光素子を内蔵する表示装置、及び発電装置 |
WO2009002624A1 (en) | 2007-06-28 | 2008-12-31 | 3M Innovative Properties Company | Thin film transistors incorporating interfacial conductive clusters |
US7859188B2 (en) | 2007-08-21 | 2010-12-28 | Global Oled Technology Llc | LED device having improved contrast |
JP5115180B2 (ja) | 2007-12-21 | 2013-01-09 | ソニー株式会社 | 自発光型表示装置およびその駆動方法 |
US8405585B2 (en) | 2008-01-04 | 2013-03-26 | Chimei Innolux Corporation | OLED display, information device, and method for displaying an image in OLED display |
CN101946277B (zh) | 2008-02-11 | 2014-09-03 | 高通Mems科技公司 | 与显示驱动方案集成的显示元件感测、测量或表征的方法及设备以及使用所述方法及设备的系统及应用 |
KR100939211B1 (ko) | 2008-02-22 | 2010-01-28 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치와 그 구동방법 |
JP2009282158A (ja) | 2008-05-20 | 2009-12-03 | Samsung Electronics Co Ltd | 表示装置 |
JP2010044118A (ja) | 2008-08-08 | 2010-02-25 | Sony Corp | 表示装置およびその製造方法 |
JP5117326B2 (ja) | 2008-08-29 | 2013-01-16 | 富士フイルム株式会社 | カラー表示装置及びその製造方法 |
EP2159783A1 (en) | 2008-09-01 | 2010-03-03 | Barco N.V. | Method and system for compensating ageing effects in light emitting diode display devices |
US8368654B2 (en) | 2008-09-30 | 2013-02-05 | Apple Inc. | Integrated touch sensor and solar assembly |
KR20100043437A (ko) | 2008-10-20 | 2010-04-29 | 삼성전자주식회사 | 터치 스크린을 구비한 컴퓨팅 기기의 입력 판단 장치 및 방법 |
KR101582937B1 (ko) | 2008-12-02 | 2016-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101542398B1 (ko) | 2008-12-19 | 2015-08-13 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
US20100237374A1 (en) | 2009-03-20 | 2010-09-23 | Electronics And Telecommunications Research Institute | Transparent Organic Light Emitting Diode Lighting Device |
KR101320655B1 (ko) | 2009-08-05 | 2013-10-23 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
KR101100947B1 (ko) | 2009-10-09 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
KR101182442B1 (ko) | 2010-01-27 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그의 제조 방법 |
KR101860934B1 (ko) | 2011-07-08 | 2018-05-25 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US9013472B2 (en) | 2011-11-08 | 2015-04-21 | Innolux Corporation | Stereophonic display devices |
-
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- 2004-02-24 JP JP2006501428A patent/JP5178006B2/ja not_active Expired - Lifetime
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11824066B2 (en) | 2020-05-14 | 2023-11-21 | Samsung Display Co., Ltd. | Display device and manufacturing method thereof |
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US7948170B2 (en) | 2011-05-24 |
WO2004075245A2 (en) | 2004-09-02 |
US10163996B2 (en) | 2018-12-25 |
US10991777B2 (en) | 2021-04-27 |
CA2419704A1 (en) | 2004-08-24 |
US20210217832A1 (en) | 2021-07-15 |
US20220271111A1 (en) | 2022-08-25 |
US10439013B2 (en) | 2019-10-08 |
EP1599910A2 (en) | 2005-11-30 |
US20230292557A1 (en) | 2023-09-14 |
US20190088729A1 (en) | 2019-03-21 |
JP2006518864A (ja) | 2006-08-17 |
US11348984B2 (en) | 2022-05-31 |
US20110272695A1 (en) | 2011-11-10 |
US20070029545A1 (en) | 2007-02-08 |
WO2004075245A3 (en) | 2004-10-14 |
TW200423805A (en) | 2004-11-01 |
US20190386080A1 (en) | 2019-12-19 |
US11665934B2 (en) | 2023-05-30 |
US20170125498A1 (en) | 2017-05-04 |
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