JP5078240B2 - ドープ窒化膜、ドープ酸化膜、およびその他のドープ膜 - Google Patents
ドープ窒化膜、ドープ酸化膜、およびその他のドープ膜 Download PDFInfo
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- JP5078240B2 JP5078240B2 JP2005182180A JP2005182180A JP5078240B2 JP 5078240 B2 JP5078240 B2 JP 5078240B2 JP 2005182180 A JP2005182180 A JP 2005182180A JP 2005182180 A JP2005182180 A JP 2005182180A JP 5078240 B2 JP5078240 B2 JP 5078240B2
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- 150000004767 nitrides Chemical class 0.000 title claims description 31
- 239000002243 precursor Substances 0.000 claims description 56
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
- 238000000151 deposition Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 32
- 239000012686 silicon precursor Substances 0.000 claims description 31
- 230000008021 deposition Effects 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- -1 organogermanium compound Chemical class 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 230000000704 physical effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 13
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 7
- 239000007833 carbon precursor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910000078 germane Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000004954 trialkylamino group Chemical group 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- MCKLJFJEQRYRQT-APGJSSKUSA-N 20-hydroxycholesterol Chemical compound C1C=C2C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@@](C)(O)CCCC(C)C)[C@@]1(C)CC2 MCKLJFJEQRYRQT-APGJSSKUSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical group [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
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Description
41 スペーサ
42 ゲート
51 スペーサ
52 ゲート
Claims (9)
- 3GPa(圧縮)から3GPa(引張り)の範囲の調整可能な応力を有する膜を形成する方法であって、
少なくとも1種のシリコン前駆体を準備するステップと、
窒素前駆体(前記シリコン前駆体と同じまたは異なってもよい)または酸素前駆体の少なくとも一方を準備するステップと、
少なくとも1つの非シリコン前駆体として、ゲルマニウム前駆体をさらに準備するステップと、
前記膜を650℃よりも低い堆積温度の下で堆積するステップと、
エッチングを制御するために、前記非シリコン前駆体からの非シリコン・ドーパントを検出するステップと
を含み、前記膜が、ドープ窒化シリコン膜、ドープ酸化シリコン膜、ドープ酸窒化シリコン膜、またはドープ炭化シリコン膜であり、前記ドープ酸化シリコン膜の場合は、前記非シリコン前駆体がホウ素ではない、方法。 - 前記少なくとも1つのシリコン前駆体を準備するステップと、前記少なくとも1つの非シリコン前駆体を準備するステップとを同時に行い、前記前駆体のそれぞれがガス流の形で準備される、請求項1に記載の方法。
- 前記非シリコン前駆体が、GeH3CH3、および有機ゲルマニウム化合物から選択される、請求項1に記載の方法。
- 前記非シリコン前駆体が、ゲルマニウムのアルキル水素化物である、請求項1に記載の方法。
- 前記膜の少なくとも1つの化学的なまたは物理的な特性を調整するために、少なくとも2つの前駆体の混合物を用いる、請求項1に記載の方法。
- 前記少なくとも1つの化学的なまたは物理的な特性が、膜の応力と、ウェット・エッチング速度と、ドライ・エッチング速度と、エッチング終点と、堆積速度と、あるいはこれらを組み合わせた特性とからなる群から選択されることを特徴とする、請求項5に記載の方法。
- 前記堆積の堆積温度が室温である、請求項1に記載の方法。
- 前記少なくとも1種のシリコン前駆体が、シランであり、前記窒素前駆体がアンモニアであり、前記シランと前記アンモニアの混合物にGeを添加し、GeドープSi窒化膜を形成することを含む、請求項1に記載の方法。
- 前記膜が、均一に分布したGe濃度を有するGeドープ窒化シリコン膜である、請求項1に記載の方法。
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US10/710,245 | 2004-06-29 | ||
US10/710,245 US20050287747A1 (en) | 2004-06-29 | 2004-06-29 | Doped nitride film, doped oxide film and other doped films |
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JP2006013503A JP2006013503A (ja) | 2006-01-12 |
JP2006013503A5 JP2006013503A5 (ja) | 2008-06-19 |
JP5078240B2 true JP5078240B2 (ja) | 2012-11-21 |
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JP2005182180A Expired - Fee Related JP5078240B2 (ja) | 2004-06-29 | 2005-06-22 | ドープ窒化膜、ドープ酸化膜、およびその他のドープ膜 |
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US (4) | US20050287747A1 (ja) |
JP (1) | JP5078240B2 (ja) |
CN (1) | CN100428424C (ja) |
TW (1) | TWI355684B (ja) |
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TW200614349A (en) | 2006-05-01 |
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US20080054228A1 (en) | 2008-03-06 |
US7595010B2 (en) | 2009-09-29 |
US20060237846A1 (en) | 2006-10-26 |
JP2006013503A (ja) | 2006-01-12 |
US20060138566A1 (en) | 2006-06-29 |
TWI355684B (en) | 2012-01-01 |
CN1716548A (zh) | 2006-01-04 |
US7361611B2 (en) | 2008-04-22 |
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