JP2006013503A5 - - Google Patents

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JP2006013503A5
JP2006013503A5 JP2005182180A JP2005182180A JP2006013503A5 JP 2006013503 A5 JP2006013503 A5 JP 2006013503A5 JP 2005182180 A JP2005182180 A JP 2005182180A JP 2005182180 A JP2005182180 A JP 2005182180A JP 2006013503 A5 JP2006013503 A5 JP 2006013503A5
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precursor
film
silicon
doped
germanium
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JP2006013503A (ja
JP5078240B2 (ja
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Claims (18)

  1. 3GPa(圧縮)から3GPa(引張り)の範囲の調整可能な応力を有する膜を形成する方法であって、
    少なくとも1種のシリコン前駆体を準備するステップと、
    窒素前駆体(前記シリコン前駆体と同じまたは異なってもよい)または酸素前駆体の少なくとも一方を準備するステップと、
    少なくとも1つの非シリコン前駆体(前記シリコン前駆体、前記窒素前駆体、または前記酸素前駆体、あるいはこれらの組合せと同じまたは異なってもよい)をさらに準備するステップと、
    前記膜を堆積するステップと、
    を含み、前記膜が、ドープ窒化シリコン膜、ドープ酸化シリコン膜、ドープ酸窒化シリコン膜、またはドープ炭化シリコン膜であり、前記ドープ酸化シリコン膜の場合は、前記非シリコン前駆体がホウ素ではなくかつリンでもない、方法。
  2. 前記少なくとも1つのシリコン前駆体を準備するステップと、前記少なくとも1つの非シリコン前駆体を準備するステップとを同時に行い、前記前駆体のそれぞれがガス流の形で準備される、請求項1に記載の方法。
  3. 前記非シリコン前駆体がゲルマニウム前駆体である、請求項1に記載の方法。
  4. 前記非シリコン前駆体が、炭素前駆体、ホウ素前駆体、アルミニウム前駆体、ヒ素前駆体、ハフニウム前駆体、ガリウム前駆体、およびインジウム前駆体からなる群から選択される、請求項1に記載の方法。
  5. 前記非シリコン前駆体が、GeH、GeHCH、および有機ゲルマニウム化合物からなる群から選択されるゲルマニウム前駆体と、ジボランと、トリメチルアルミニウム(TMA)と、C2H4炭素前駆体と、トリメチルGaと、トリメチルInと、トリアルキルアミノGaと、トリアルキルアミノInと、GaH3と、InH3と、AlH3と、アルミニウムイソプロポキシドとからなる群から選択される、請求項1に記載の方法。
  6. 前記非シリコン前駆体が、ゲルマニウム、炭素、アルミニウム、ホウ素、ヒ素、ハフニウム、ガリウム、またはインジウムのアルキル水素化物またはアルキルアミノ水素化物である、請求項1に記載の方法。
  7. 前記膜の少なくとも1つの化学的なまたは物理的な特性を調整するために、少なくとも2つの前駆体の混合物を用いる、請求項1に記載の方法。
  8. 前記少なくとも1つの化学的なまたは物理的な特性が、膜の応力と、ウェット・エッチング速度と、ドライ・エッチング速度と、エッチング終点と、堆積速度と、あるいはこれらを組み合わせた特性とからなる群から選択されることを特徴とする、請求項7に記載の方法。
  9. 前記堆積が、700℃よりも低い堆積温度で実施される、請求項1に記載の方法。
  10. 前記堆積の堆積温度が室温である、請求項1に記載の方法。
  11. シランとアンモニアの混合物にGeを添加し、GeドープSi窒化膜を形成することを含む、請求項1に記載の方法。
  12. エッチングを制御するために、前記非シリコン前駆体からの非シリコン・ドーパントを検出するステップをさらに含む、請求項1に記載の方法。
  13. 前記膜が、均一に分布したGe濃度を有するGeドープ窒化シリコン膜である、請求項1に記載の方法。
  14. 3GPa(圧縮)から3GPa(引張り)の範囲の調整可能な応力を有し、ドーパント
    をドープした窒化シリコンまたは酸化シリコンからなる膜。
  15. 前記ドーパントがゲルマニウム、ホウ素、アルミニウム、炭素、ヒ素、ハフニウム、ガリウム、インジウム、あるいはこれらの組合せからなる群から選択される、請求項14に記載の膜。
  16. 前記ドーパントが2つ以上である、請求項14に記載の膜。
  17. 前記ドーパントがGeであり、Geをドープしないこと以外は同じプロセスで作製された膜よりも少なくとも1.0GPa大きい応力を有する、請求項14に記載の膜。
  18. 前記ドーパントがアルミニウムである酸化シリコン膜、または前記ドーパントがゲルマニウムであり、均一に分布したGe濃度を有するGeドープ窒化シリコン膜を含む、請求項14に記載の膜。
JP2005182180A 2004-06-29 2005-06-22 ドープ窒化膜、ドープ酸化膜、およびその他のドープ膜 Expired - Fee Related JP5078240B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/710,245 US20050287747A1 (en) 2004-06-29 2004-06-29 Doped nitride film, doped oxide film and other doped films
US10/710,245 2004-06-29

Publications (3)

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JP2006013503A JP2006013503A (ja) 2006-01-12
JP2006013503A5 true JP2006013503A5 (ja) 2008-06-19
JP5078240B2 JP5078240B2 (ja) 2012-11-21

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US (4) US20050287747A1 (ja)
JP (1) JP5078240B2 (ja)
CN (1) CN100428424C (ja)
TW (1) TWI355684B (ja)

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