JP4881211B2 - 配線基板の製造方法及び半導体装置の製造方法及び配線基板 - Google Patents
配線基板の製造方法及び半導体装置の製造方法及び配線基板 Download PDFInfo
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- JP4881211B2 JP4881211B2 JP2007105965A JP2007105965A JP4881211B2 JP 4881211 B2 JP4881211 B2 JP 4881211B2 JP 2007105965 A JP2007105965 A JP 2007105965A JP 2007105965 A JP2007105965 A JP 2007105965A JP 4881211 B2 JP4881211 B2 JP 4881211B2
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Description
さらに、クラック20が拡大された場合には、第2絶縁層13に積層された配線部16を切断してしまうおそれがあった。
(2) 本発明は、支持基板上にレジストを形成する第1工程と、前記レジストに前記支持基板を露出させる第1開口を形成する第2工程と、金属からなる前記支持基板を給電層とする電解めっきにより、前記レジストに設けられた前記第1開口内に電極パッドの円柱部を析出させ、さらに電解めっきを継続して前記円柱部より上方に析出され前記レジストの上面よりも上方に盛り上がった膨出部と、前記膨出部の外周から前記第1開口の周辺方向に突出する突出部とを形成する第3工程と、前記レジストを剥離する第4工程と、前記電極パッドの表面を覆うように絶縁層を形成する第5工程と、前記絶縁層に前記電極パッドの前記膨出部を露出させるための第2開口を形成する第6工程と、前記第2開口及び前記絶縁層の表面に前記電極パッドの前記膨出部と電気的に接続される配線層を形成する第7工程と、前記支持基板を除去して前記電極パッドの前記円柱部及び前記絶縁層を露出させる第8工程と、を有することにより、上記課題を解決するものである。
(3) 本発明は、前記第1絶縁層の前記第1開口に粗化処理を施す工程を有することにより、上記課題を解決するものである。
(4) 本発明は、前記レジストを剥離した後、前記電極パッドの表面に粗化処理を施す工程を有することにより、上記課題を解決するものである。
(5) 本発明は、前記(1)に記載の半導体装置の製造方法であって、前記第3工程は、前記支持基板と同種の金属よりなる一の金属層を前記支持基板に積層し、さらに前記支持基板と異なる金属よりなる他の金属層を前記一の金属層と前記円柱部との間に積層する工程を含み、前記第7工程は、前記支持基板を除去し、さらに前記電極パッドの前記円柱部に積層された前記他の金属層の露出面が凹部を形成するように前記一の前記金属層を選択的に除去する工程を含むことにより、上記課題を解決するものである。
(6) 本発明は、前記(2)に記載の半導体装置の製造方法であって、前記第3工程は、前記支持基板と同種の金属よりなる一の金属層を前記支持基板に積層し、さらに前記支持基板と異なる金属よりなる他の金属層を前記一の金属層と前記円柱部との間に積層する工程を含み、前記第8工程は、前記支持基板を除去し、さらに前記電極パッドの前記円柱部に積層された前記他の金属層の露出面が凹部を形成するように前記一の前記金属層を選択的に除去する工程を含むことにより、上記課題を解決するものである。
(7) 本発明は、前記(1)乃至(6)の何れか1項に記載された配線基板の製造方法を用いた半導体装置の製造方法であって、前記電極パッドにはんだバンプを介して半導体チップを実装する工程を有することにより、上記課題を解決するものである。
(8) 本発明は、電極パッドと、前記電極パッドの表面を覆うように積層される1層の絶縁層と、を有する配線基板において、前記電極パッドは、前記絶縁層の開口内に形成された円柱部と、前記円柱部より上方に盛り上がるように形成された膨出部と、前記膨出部の外周から前記開口の周辺方向に突出する突出部とを有し、前記円柱部、前記膨出部、前記突出部は、同一金属により一体的に形成されており、前記絶縁層は、少なくとも前記円柱部の側面と、前記突出部の表面とを覆っていることにより、上記課題を解決するものである。
(9) 本発明は、前記電極パッドの他面側露出面は、前記絶縁層の表面より凹んだ位置に形成され、前記絶縁層の表面に凹部を形成することにより、上記課題を解決するものである。
ここで、半導体装置100に用いられる配線基板120の製造方法について図3A〜図3Nを参照して説明する。図3A〜図3Nは実施例1の配線基板120の製造方法(その1〜その14)を説明するための図である。尚、図3A〜図3Nにおいては、第1電極パッド130が配線基板120の下面側となるフェイスダウンの向き(前述した図2に示す積層構造と上下方向に逆の向き)で各層を積層する。
さらに、この変形例の場合、前述した図3Mの工程で、半導体チップ110を配線基板120に搭載し、その後、支持基板200除去することにより、半導体装置を完成するようにしても良い。
さらに、この変形例の場合、前述した図6Nの工程で、半導体チップ110を配線基板420に搭載し、その後、支持基板200除去することにより、半導体装置を完成するようにしても良い。
尚、Cu層174における、膨出部174bの高さ及び鍔部174cの水平方向への突出長さは、電解Cuめっき時間によって任意の寸法に設定することが可能である。
さらに、この変形例の場合、前述した図9Nの工程で、半導体チップ110を配線基板120に搭載し、その後、支持基板200除去することにより、半導体装置を完成するようにしても良い。
さらに、この変形例の場合、前述した支持基板200除去する前の工程で、半導体チップ110を配線基板620に搭載し、その後、支持基板200除去することにより、半導体装置を完成するようにしても良い。
また、本発明は、上記はんだバンプ180を形成する構成の半導体装置に限らず、基板に電子部品が搭載された構成、あるいは基板に配線パターンが形成された構成でも良いので、例えば、はんだバンプを介して基板上に接合されるフリップチップ、あるいははんだバンプを介して回路基板を接合させる多層基板やインターポーザにも適用することができるのは勿論である。
110 半導体チップ
120,420,520,620 配線基板
121 第1絶縁層
122 第1層
123 第2絶縁層
124 第2層
126 第3層
128 第4層
130 第1電極パッド
132 突出部
134,142,152 ビア
140,150 配線パターン層
160 第2電極パッド
170 Au層
172 Ni層
174 Cu層
174a 円柱部
174b 膨出部
174c 鍔部
180 はんだバンプ
200 支持基板
220,310 開口
340 電極開口
Claims (9)
- 支持基板上に第1絶縁層を形成する第1工程と、
前記第1絶縁層に前記支持基板を露出させる第1開口を形成する第2工程と、
金属からなる前記支持基板を給電層とする電解めっきにより、前記第1絶縁層に設けられた前記第1開口内に電極パッドの円柱部を析出させ、さらに電解めっきを継続して前記円柱部より上方に析出され前記第1絶縁層の上面よりも上方に盛り上がった膨出部と、前記膨出部の外周から前記第1開口の周辺方向に突出する突出部とを形成する第3工程と、
前記電極パッドが設けられた前記第1絶縁層上に第2絶縁層を形成する第4工程と、
前記第2絶縁層に前記電極パッドの前記膨出部を露出させるための第2開口を形成する第5工程と、
前記第2開口及び前記第2絶縁層上に前記電極パッドの前記膨出部と電気的に接続される配線層を形成する第6工程と、
前記支持基板を除去して前記電極パッドの前記円柱部及び前記第1の絶縁層を露出させる第7工程と、
を有することを特徴とする配線基板の製造方法。 - 支持基板上にレジストを形成する第1工程と、
前記レジストに前記支持基板を露出させる第1開口を形成する第2工程と、
金属からなる前記支持基板を給電層とする電解めっきにより、前記レジストに設けられた前記第1開口内に電極パッドの円柱部を析出させ、さらに電解めっきを継続して前記円柱部より上方に析出され前記レジストの上面よりも上方に盛り上がった膨出部と、前記膨出部の外周から前記第1開口の周辺方向に突出する突出部とを形成する第3工程と、
前記レジストを剥離する第4工程と、
前記電極パッドの表面を覆うように絶縁層を形成する第5工程と、
前記絶縁層に前記電極パッドの前記膨出部を露出させるための第2開口を形成する第6工程と、
前記第2開口及び前記絶縁層の表面に前記電極パッドの前記膨出部と電気的に接続される配線層を形成する第7工程と、
前記支持基板を除去して前記電極パッドの前記円柱部及び前記絶縁層を露出させる第8工程と、
を有することを特徴とする配線基板の製造方法。 - 前記第1絶縁層の前記第1開口に粗化処理を施す工程を有することを特徴とする請求項1に記載の配線基板の製造方法。
- 前記レジストを剥離した後、前記電極パッドの表面に粗化処理を施す工程を有することを特徴とする請求項2に記載の配線基板の製造方法。
- 前記第3工程は、前記支持基板と同種の金属よりなる一の金属層を前記支持基板に積層し、さらに前記支持基板と異なる金属よりなる他の金属層を前記一の金属層と前記円柱部との間に積層する工程を含み、
前記第7工程は、前記支持基板を除去し、さらに前記電極パッドの前記円柱部に積層された前記他の金属層の露出面が凹部を形成するように前記一の前記金属層を選択的に除去する工程を含むことを特徴とする請求項1に記載の配線基板の製造方法。 - 前記第3工程は、前記支持基板と同種の金属よりなる一の金属層を前記支持基板に積層し、さらに前記支持基板と異なる金属よりなる他の金属層を前記一の金属層と前記円柱部との間に積層する工程を含み、
前記第8工程は、前記支持基板を除去し、さらに前記電極パッドの前記円柱部に積層された前記他の金属層の露出面が凹部を形成するように前記一の前記金属層を選択的に除去する工程を含むことを特徴とする請求項2に記載の配線基板の製造方法。 - 前記請求項1乃至請求項6の何れか1項に記載された配線基板の製造方法を用いた半導体装置の製造方法であって、
前記電極パッドにはんだバンプを介して半導体チップを実装する工程を有することを特徴とする半導体装置の製造方法。 - 電極パッドと、
前記電極パッドの表面を覆うように積層される1層の絶縁層と、
を有する配線基板において、
前記電極パッドは、前記絶縁層の開口内に形成された円柱部と、前記円柱部より上方に盛り上がるように形成された膨出部と、前記膨出部の外周から前記開口の周辺方向に突出する突出部とを有し、
前記円柱部、前記膨出部、前記突出部は、同一金属により一体的に形成されており、
前記絶縁層は、少なくとも前記円柱部の側面と、前記突出部の表面とを覆っていることを特徴とする配線基板。 - 前記電極パッドの他面側露出面は、前記絶縁層の表面より凹んだ位置に形成され、前記絶縁層の表面に凹部を形成していることを特徴とする請求項8に記載の配線基板。
Priority Applications (6)
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JP2007105965A JP4881211B2 (ja) | 2007-04-13 | 2007-04-13 | 配線基板の製造方法及び半導体装置の製造方法及び配線基板 |
KR1020080031963A KR20080092851A (ko) | 2007-04-13 | 2008-04-07 | 배선 기판의 제조 방법, 반도체 장치의 제조 방법 및 배선기판 |
US12/099,322 US7915088B2 (en) | 2007-04-13 | 2008-04-08 | Wiring board manufacturing method, semiconductor device manufacturing method and wiring board |
TW097112856A TWI462237B (zh) | 2007-04-13 | 2008-04-09 | 佈線基板之製造方法,半導體裝置之製造方法及佈線基板 |
CN2008100901939A CN101286456B (zh) | 2007-04-13 | 2008-04-14 | 布线板制造方法、半导体器件制造方法以及布线板 |
US13/034,083 US8237270B2 (en) | 2007-04-13 | 2011-02-24 | Wiring board manufacturing method, semiconductor device manufacturing method and wiring board |
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KR20080092851A (ko) | 2008-10-16 |
JP2008263125A (ja) | 2008-10-30 |
US20110139502A1 (en) | 2011-06-16 |
TW200843045A (en) | 2008-11-01 |
TWI462237B (zh) | 2014-11-21 |
US7915088B2 (en) | 2011-03-29 |
US20080258300A1 (en) | 2008-10-23 |
US8237270B2 (en) | 2012-08-07 |
CN101286456A (zh) | 2008-10-15 |
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