JP4825510B2 - リソグラフィ装置 - Google Patents

リソグラフィ装置 Download PDF

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Publication number
JP4825510B2
JP4825510B2 JP2005364310A JP2005364310A JP4825510B2 JP 4825510 B2 JP4825510 B2 JP 4825510B2 JP 2005364310 A JP2005364310 A JP 2005364310A JP 2005364310 A JP2005364310 A JP 2005364310A JP 4825510 B2 JP4825510 B2 JP 4825510B2
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Japan
Prior art keywords
liquid
cleaning
substrate
substrate table
optical element
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Expired - Fee Related
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JP2005364310A
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English (en)
Japanese (ja)
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JP2006179909A (ja
JP2006179909A5 (enExample
Inventor
ヤンセン ハンス
ヤコブス マテウス バーゼルマンス ヨハネス
ニコラース ランベルトゥス ドンダース シュールト
アレクサンダー ホーゲンダム クリスティアーン
ヨハネス ソフィア マリア メルテンス ジェローン
キャサリヌス フーベルトゥス ムルケンス ヨハネス
コエルト シュタフェンガ マルコ
シュトレーフケルク ボブ
コーネリス ファン デル ホーフェン ヤン
デジル グローヴシュトラ セドリック
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エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2006179909A5 publication Critical patent/JP2006179909A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2005364310A 2004-12-20 2005-12-19 リソグラフィ装置 Expired - Fee Related JP4825510B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/015,767 2004-12-20
US11/015,767 US7880860B2 (en) 2004-12-20 2004-12-20 Lithographic apparatus and device manufacturing method

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2008161756A Division JP2008227548A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161741A Division JP2008227547A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161707A Division JP2008277854A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161719A Division JP2008263221A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006179909A JP2006179909A (ja) 2006-07-06
JP2006179909A5 JP2006179909A5 (enExample) 2008-08-07
JP4825510B2 true JP4825510B2 (ja) 2011-11-30

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2005364310A Expired - Fee Related JP4825510B2 (ja) 2004-12-20 2005-12-19 リソグラフィ装置
JP2008161719A Pending JP2008263221A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161756A Pending JP2008227548A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161741A Pending JP2008227547A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161707A Pending JP2008277854A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2011260597A Pending JP2012044227A (ja) 2004-12-20 2011-11-29 リソグラフィ装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2008161719A Pending JP2008263221A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161756A Pending JP2008227548A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161741A Pending JP2008227547A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2008161707A Pending JP2008277854A (ja) 2004-12-20 2008-06-20 リソグラフィ装置とデバイス製造方法
JP2011260597A Pending JP2012044227A (ja) 2004-12-20 2011-11-29 リソグラフィ装置

Country Status (2)

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US (6) US7880860B2 (enExample)
JP (6) JP4825510B2 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101440746B1 (ko) 2004-06-09 2014-09-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20090225286A1 (en) * 2004-06-21 2009-09-10 Nikon Corporation Exposure apparatus, method for cleaning member thereof , maintenance method for exposure apparatus, maintenance device, and method for producing device
JP2006024692A (ja) * 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
US7385670B2 (en) * 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
TWI436403B (zh) * 2004-10-26 2014-05-01 尼康股份有限公司 A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
US20070242248A1 (en) * 2004-10-26 2007-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device
KR101559621B1 (ko) * 2004-12-06 2015-10-13 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및 디바이스 제조 방법
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2006261606A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置、露光方法及びデバイス製造方法
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7315033B1 (en) * 2005-05-04 2008-01-01 Advanced Micro Devices, Inc. Method and apparatus for reducing biological contamination in an immersion lithography system
KR100638107B1 (ko) * 2005-06-09 2006-10-24 연세대학교 산학협력단 이머젼 박막층을 구비하는 광변조 미세개구 어레이 장치 및이를 이용한 고속 미세패턴 기록시스템
US7291569B2 (en) * 2005-06-29 2007-11-06 Infineon Technologies Ag Fluids for immersion lithography systems
JP2007012375A (ja) * 2005-06-29 2007-01-18 Toyota Motor Corp 燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
KR20080031376A (ko) * 2005-07-11 2008-04-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP2007150102A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
CN102298274A (zh) * 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
CN102109773A (zh) * 2006-05-22 2011-06-29 株式会社尼康 曝光方法、曝光装置以及维修方法
CN101385124B (zh) * 2006-05-23 2011-02-09 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
CN101390194B (zh) * 2006-06-30 2011-04-20 株式会社尼康 维修方法、曝光方法及装置、以及元件制造方法
WO2008026593A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device production method, cleaning method, and cleaning member
KR20090060270A (ko) * 2006-09-08 2009-06-11 가부시키가이샤 니콘 클리닝용 부재, 클리닝 방법, 그리고 디바이스 제조 방법
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8013975B2 (en) * 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
WO2008089990A2 (en) * 2007-01-26 2008-07-31 Carl Zeiss Smt Ag Method for operating an immersion lithography apparatus
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
JP4366407B2 (ja) * 2007-02-16 2009-11-18 キヤノン株式会社 露光装置及びデバイス製造方法
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
KR20100031694A (ko) * 2007-05-28 2010-03-24 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US9019466B2 (en) * 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
NL1035942A1 (nl) * 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5017232B2 (ja) * 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー．ブイ． クリーニング装置および液浸リソグラフィ装置
WO2009078443A1 (ja) * 2007-12-17 2009-06-25 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
NL1036273A1 (nl) * 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) * 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100039628A1 (en) * 2008-03-19 2010-02-18 Nikon Corporation Cleaning tool, cleaning method, and device fabricating method
NL1036709A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
JP2010021370A (ja) * 2008-07-10 2010-01-28 Canon Inc 液浸露光装置およびデバイス製造方法
US20100045949A1 (en) * 2008-08-11 2010-02-25 Nikon Corporation Exposure apparatus, maintaining method and device fabricating method
EP2159638B1 (en) * 2008-08-26 2015-06-17 ASML Netherlands BV Radiation source and lithographic apparatus
NL2003363A (en) * 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
JP5120193B2 (ja) * 2008-10-08 2013-01-16 株式会社ニコン 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法
JPWO2010050240A1 (ja) * 2008-10-31 2012-03-29 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
ES2675818T3 (es) 2009-07-17 2018-07-12 Mitsubishi Electric Corporation Dispositivo de visualización del funcionamiento de una instalación, sistema de aire acondicionado y programa
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
CA2784148A1 (en) * 2009-12-28 2011-07-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
NL2006127A (en) * 2010-02-17 2011-08-18 Asml Netherlands Bv A substrate table, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus.
US20120019802A1 (en) * 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) * 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
BR112014013734A2 (pt) 2011-12-06 2017-06-13 Masco Corp distribuição de ozônio em uma torneira
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统
US20180032409A1 (en) 2016-07-26 2018-02-01 Netapp, Inc. Backup and recovery of application data of an application executing in a virtual machine

Family Cites Families (287)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE224448C (enExample)
DE221563C (enExample)
DE242880C (enExample)
DE206607C (enExample)
US738649A (en) * 1903-01-21 1903-09-08 Walter D Young Contact-shoe for electric railways.
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
ATE1462T1 (de) 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4468120A (en) * 1981-02-04 1984-08-28 Nippon Kogaku K.K. Foreign substance inspecting apparatus
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (enExample) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (enExample) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (enExample) 1987-03-31 1988-10-14
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5257128A (en) 1988-06-22 1993-10-26 Board Of Regents, The University Of Texas System Freezing/perfusion microscope stage
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
JP3158446B2 (ja) 1990-12-13 2001-04-23 株式会社ニコン 表面位置検出装置及び表面位置検出方法、並びに露光装置、露光方法及び半導体製造方法
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH06104167A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 露光装置及び半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
WO1998009278A1 (en) * 1996-08-26 1998-03-05 Digital Papyrus Technologies Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
AU755913B2 (en) * 1997-06-18 2003-01-02 Masad Damha Nucleic acid biosensor diagnostics
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
JPH11283903A (ja) * 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU1505699A (en) 1997-12-12 1999-07-05 Nikon Corporation Projection exposure method and projection aligner
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6459472B1 (en) 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2001121063A (ja) 1999-10-26 2001-05-08 Tokyo Electron Ltd フィルタ装置及び液処理装置
JP2000147204A (ja) 1998-11-06 2000-05-26 Nikon Corp 保護膜を具える光学素子及びその製造方法及び光学装置及び半導体露光装置
US6379746B1 (en) 1999-02-02 2002-04-30 Corning Incorporated Method for temporarily protecting glass articles
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP2000323396A (ja) 1999-05-13 2000-11-24 Canon Inc 露光方法、露光装置、およびデイバイス製造方法
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
US6127101A (en) 1999-10-12 2000-10-03 Air Products And Chemicals, Inc. Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US6466365B1 (en) * 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6301055B1 (en) 2000-08-16 2001-10-09 California Institute Of Technology Solid immersion lens structures and methods for producing solid immersion lens structures
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002236111A (ja) 2001-02-09 2002-08-23 Masahiro Nishikawa 液体ポンプの気泡検出方法及びその装置
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
KR20050044371A (ko) * 2001-11-07 2005-05-12 어플라이드 머티어리얼스, 인코포레이티드 광학 스폿 그리드 어레이 프린터
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
SG108316A1 (en) * 2002-06-14 2005-01-28 Asml Netherlands Bv Euv lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there
AU2002950185A0 (en) * 2002-07-12 2002-09-12 The Australian National University Enzyme inhibitors
TWI242691B (en) 2002-08-23 2005-11-01 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US6829035B2 (en) * 2002-11-12 2004-12-07 Applied Materials Israel, Ltd. Advanced mask cleaning and handling
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60319658T2 (de) * 2002-11-29 2009-04-02 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
AU2003284672A1 (en) 2002-12-03 2004-06-23 Nikon Corporation Contaminant removing method and device, and exposure method and apparatus
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
KR101085372B1 (ko) 2002-12-10 2011-11-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004053957A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
CN101424883B (zh) 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
AU2003302830A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
KR20050062665A (ko) 2002-12-10 2005-06-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
KR101157002B1 (ko) 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
WO2004053956A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及び露光方法、デバイス製造方法
KR100967835B1 (ko) * 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 층상 스폿 조사 방법 및 장치에서의 액체 제거
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
ATE365962T1 (de) 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
KR101121655B1 (ko) 2003-04-10 2012-03-09 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG2013077797A (en) * 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
KR101304105B1 (ko) 2003-04-11 2013-09-05 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1624481A4 (en) * 2003-05-15 2008-01-30 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7274472B2 (en) 2003-05-28 2007-09-25 Timbre Technologies, Inc. Resolution enhanced optical metrology
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
WO2005010611A2 (en) 2003-07-08 2005-02-03 Nikon Corporation Wafer table for immersion lithography
JP4835155B2 (ja) * 2003-07-09 2011-12-14 株式会社ニコン 露光装置及びデバイス製造方法
SG109000A1 (en) 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP3007207B1 (en) 2003-09-26 2017-03-08 Nikon Corporation A projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
KR20060126949A (ko) 2003-10-08 2006-12-11 가부시키가이샤 니콘 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US20070105050A1 (en) 2003-11-05 2007-05-10 Dsm Ip Assets B.V. Method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
KR100965330B1 (ko) 2003-12-15 2010-06-22 칼 짜이스 에스엠티 아게 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4579927B2 (ja) * 2003-12-23 2010-11-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 浸漬リソグラフィのための除去可能なペリクル
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005191381A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005191393A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102207609B (zh) 2004-01-14 2013-03-20 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101799587B (zh) 2004-01-16 2012-05-30 卡尔蔡司Smt有限责任公司 光学系统、投影系统及微结构半导体部件的制造方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US8852850B2 (en) 2004-02-03 2014-10-07 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4018647B2 (ja) 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
EP2256790A3 (en) * 2004-02-10 2012-10-10 Nikon Corporation exposure apparatus, device manufacturing method and maintenance method
JP2007522508A (ja) 2004-02-13 2007-08-09 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィック投影露光装置のための投影対物レンズ
CN1922528A (zh) 2004-02-18 2007-02-28 康宁股份有限公司 用于具有深紫外光的高数值孔径成象的反折射成象系统
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
JP2005286068A (ja) 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
JP4510494B2 (ja) 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) * 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101440746B1 (ko) 2004-06-09 2014-09-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
JP4677833B2 (ja) 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
DE102004033208B4 (de) 2004-07-09 2010-04-01 Vistec Semiconductor Systems Gmbh Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv
US7307263B2 (en) 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
KR200363781Y1 (ko) 2004-07-21 2004-10-11 주식회사 엘지화학 보강구조를 이용한 이중바닥시스템 상판용 고강성 패널
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US20060026755A1 (en) 2004-08-05 2006-02-09 Bain Colin C Patient lift with integrated foot push pad
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
EP1806773A4 (en) 2004-10-13 2008-12-31 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JP2006120674A (ja) * 2004-10-19 2006-05-11 Canon Inc 露光装置及び方法、デバイス製造方法
JP2006134999A (ja) 2004-11-04 2006-05-25 Sony Corp 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法
JP2006133661A (ja) * 2004-11-09 2006-05-25 Minebea Co Ltd カラーホイールおよびその製造方法と製造用治具
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
KR101559621B1 (ko) 2004-12-06 2015-10-13 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및 디바이스 제조 방법
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006310706A (ja) 2005-05-02 2006-11-09 Nikon Corp 光学部品の洗浄方法、液浸投影露光装置および露光方法
US20060250588A1 (en) 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US7315033B1 (en) * 2005-05-04 2008-01-01 Advanced Micro Devices, Inc. Method and apparatus for reducing biological contamination in an immersion lithography system
WO2006122578A1 (en) 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
DE102005031792A1 (de) 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
JP2007029973A (ja) 2005-07-25 2007-02-08 Sony Corp レーザ加工装置とその加工方法及びデブリ回収装置とその回収方法
JP2007088328A (ja) 2005-09-26 2007-04-05 Toshiba Corp 液浸型露光装置の洗浄方法
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
CN1963673A (zh) 2005-11-11 2007-05-16 台湾积体电路制造股份有限公司 浸润式微影曝光设备及方法
JP2007142217A (ja) 2005-11-18 2007-06-07 Taiwan Semiconductor Manufacturing Co Ltd イマージョン式リソグラフィ露光装置およびその方法
JP2007150102A (ja) 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7462850B2 (en) 2005-12-08 2008-12-09 Asml Netherlands B.V. Radical cleaning arrangement for a lithographic apparatus
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US20070146658A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US7522263B2 (en) * 2005-12-27 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and method
JP4704221B2 (ja) * 2006-01-26 2011-06-15 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP2007227543A (ja) 2006-02-22 2007-09-06 Toshiba Corp 液浸光学装置、洗浄方法及び液浸露光方法
JP2007227580A (ja) 2006-02-23 2007-09-06 Sony Corp 液浸型露光装置および液浸型露光方法
JP2007266074A (ja) 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP2007294817A (ja) 2006-04-27 2007-11-08 Sokudo:Kk 基板処理方法、基板処理システムおよび基板処理装置
US7628865B2 (en) 2006-04-28 2009-12-08 Asml Netherlands B.V. Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus
CN102298274A (zh) 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
US7969548B2 (en) 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
CN101385124B (zh) 2006-05-23 2011-02-09 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
JP2007317987A (ja) 2006-05-29 2007-12-06 Sokudo:Kk 基板処理装置および基板処理方法
CN101390194B (zh) 2006-06-30 2011-04-20 株式会社尼康 维修方法、曝光方法及装置、以及元件制造方法
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7916269B2 (en) * 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US9019466B2 (en) * 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
NL1035942A1 (nl) * 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5017232B2 (ja) * 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー．ブイ． クリーニング装置および液浸リソグラフィ装置
NL1036273A1 (nl) * 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) * 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) * 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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US7880860B2 (en) 2011-02-01
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