JP2012044227A - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP2012044227A JP2012044227A JP2011260597A JP2011260597A JP2012044227A JP 2012044227 A JP2012044227 A JP 2012044227A JP 2011260597 A JP2011260597 A JP 2011260597A JP 2011260597 A JP2011260597 A JP 2011260597A JP 2012044227 A JP2012044227 A JP 2012044227A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Abstract
【解決手段】特に、リソグラフィ装置の液体供給システムを使用して、リソグラフィ装置の投影システムと基板テーブルとの間の空間に洗浄流体を導入することができる。追加的に又は代替案として、洗浄デバイスを基板テーブルの上に備えてもよく、超音波液体を作り出すために超音波エミッタを備えることもできる。
【選択図】図5
Description
基板を保持するように構成された基板テーブルと、
基板の上にパターン化された放射光ビームを投影するように構成され、基板に隣接して最終素子を含む投影システムと、
投影システムと基板テーブルとの間の空間に液体を供給するように構成された液体供給システムと、
最終光学素子、基板テーブル、又は前記液体に曝される構成部分又は構造の表面の少なくとも1つを洗浄するように構成された洗浄デバイスと
を含むリソグラフィ装置が提供される。
基板を保持するように構成された基板テーブルと、
基板の上にパターン化された放射光ビームを投影するように構成され、基板に隣接して最終素子を含む投影システムと、
投影システムと基板テーブルとの間の空間に液体を供給するように構成された液体供給システムと、
最終光学素子、基板テーブル、又は前記液体に曝される構成部分又は構造の表面の少なくとも1つを被覆するように構成されたコータと
を含むリソグラフィ装置が提供される。
放射光ビームB(例えばUV線又はDUV線)を調節するように構成された照射システム(照射器)ILと、
パターン化デバイス(例えばマスク)MAを支持するように作られて、ある一定のパラメータにしたがってパターン化デバイスを正確に位置付けるように構成された第1位置決め装置PMに連結された支持構造(例えばマスク・テーブル)MTと、
基板(例えばレジスト被覆ウェハ)Wを保持するために作られて、ある一定のパラメータにしたがって基板を正確に位置付けるように構成された第2位置決め装置PWに連結された基板テーブル(例えばウェハ・テーブル)と、
パターン化デバイスMAによって放射光ビームBに分与されたパターンを、基板Wの(例えば1つ又は複数の金型を含む)目標部分Cの上に投影するように構成された投影システム(例えば屈折投影レンズ・システム)PSと
を含む。
1.ステップ・モードにおいて、支持構造MTと基板テーブルWTを本質的に定置させて、放射光ビームに分与されたパターン全体を一度に目標部分の上に投影する(すなわち単一静的露光)。次に基板テーブルWTをX及び/又はY方向にずらして、異なる目標部分Cを露光できるようにする。ステップ・モードでは、露光域の最大サイズが、単一静的露光において結像される目標部分Cのサイズを制限する。
BD ビーム分配システム
C 目標部分
IF 位置センサ
IL 照射システム(照射器)
IN 入口
M1、M2 パターン化デバイス位置合せマーク
MA パターン化デバイス
MT 支持構造
OUT 出口
P1、P2 基板位置合せマーク
PM 第1位置決め装置
PS 投影システム
PW 第2位置決め装置
SO 放射光源
W 基板
WT 基板テーブル
10 リザーバ
11 液体、浸液
12 液体閉じ込め構造
13 出口
14 出口
15 入口
16 ガス・シール
20 洗浄ステーション
30 超音波エミッタ
110 洗浄流体、洗浄液
Claims (30)
- 基板を保持するように構成された基板テーブルと、
前記基板の上にパターン化された放射光ビームを投影するように構成され、前記基板に隣接する最終光学素子を含む投影システムと、
前記投影システムと前記基板テーブルとの間の空間に液体を供給するように構成された液体供給システムと、
前記最終光学素子、前記基板テーブル、又は前記液体に曝される構成部分又は構造の表面の少なくとも1つを洗浄するように構成された洗浄デバイスと
を含むリソグラフィ装置。 - 前記洗浄デバイスが、前記液体供給システムの液体閉じ込め構造を含み、リソグラフィ装置に直列に並ぶ前記最終光学素子を洗浄するように構成されている請求項1に記載の装置。
- 前記洗浄デバイスが、前記空間内の液体をそれぞれ超音波洗浄液体、又はメガ音波洗浄液体に変えるように構成された、超音波トランスミッタ及びメガ音波トランスミッタの群から選択された音波トランスミッタを含む請求項1に記載の装置。
- 前記洗浄デバイスが、低波長紫外線を供給するように構成された光学素子を含む請求項1に記載の装置。
- 前記液体供給システムが、低波長紫外線を透過する表面を含む請求項4に記載の装置。
- 低波長紫外線が193nmの波長を有する請求項4に記載の装置。
- 前記洗浄デバイスが前記空間に洗浄流体を供給するように構成されている請求項1に記載の装置。
- 前記洗浄流体が溶剤を含む請求項7に記載の装置。
- 前記洗浄流体が洗浄剤を含む請求項7に記載の装置。
- 前記洗浄流体が溶存ガスを含む請求項7に記載の装置。
- 前記ガスが酸素、オゾン、又は窒素から選択される請求項10に記載の装置。
- 前記洗浄デバイスが基板テーブルの中にある請求項1に記載の装置。
- 前記洗浄デバイスが噴霧ユニットを含む請求項12に記載の装置。
- 前記噴霧ユニットが光学素子、基板テーブル、又はその両方の上に洗浄流体を噴霧するように構成されている請求項13に記載の装置。
- 前記洗浄流体がオゾンを含む請求項14に記載の装置。
- 前記洗浄流体がプラズマを含む請求項14に記載の装置。
- 前記洗浄流体が液体二酸化炭素を含む請求項14に記載の装置。
- 前記洗浄流体が無極性有機溶剤を含む請求項14に記載の装置。
- 前記洗浄流体が有極性有機溶剤を含む請求項14に記載の装置。
- 前記洗浄デバイスが、最終光学素子のみを洗浄するため、又は基板テーブルのみを洗浄するように構成されている請求項14に記載の装置。
- 基板を保持するように構成された基板テーブルと、
前記基板の上にパターン化された放射光ビームを投影するように構成され、前記基板に隣接する最終光学素子を含む投影システムと、
前記投影システムと前記基板テーブルとの間の空間に液体を供給するように構成された液体供給システムと、
前記最終光学素子、前記基板テーブル、又は前記液体に曝される構成部分又は構造の表面の少なくとも1つを被覆するように構成されたコータと
を含むリソグラフィ装置。 - 前記コータが基板テーブルの中に噴霧ユニットを含む請求項21に記載の装置。
- 前記コータが前記液体供給システムの液体閉じ込め構造を含み、前記被覆デバイスがリソグラフィ装置に直列に並ぶ前記最終光学素子を被覆するように構成されている請求項21に記載の装置。
- 前記被覆デバイスが、最終光学素子のみを被覆するため、又は基板テーブルのみを洗浄するように構成されている請求項21に記載の装置。
- (i)洗浄流体、(ii)被覆流体、(iii)被覆剥離剤、又は(iv)(i)〜(iii)のいずれかの組合せを、リソグラフィ装置の投影システムと基板テーブルとの間の空間に直列適用するための、リソグラフィ装置における流体供給システムの使用。
- リソグラフィ装置の投影システムの最終光学素子の上に洗浄流体を噴霧するように構成された噴霧ユニット。
- リソグラフィ装置の投影システムと基板テーブルとの間の空間に閉じ込められた液体を、超音波洗浄液体の中に入れ込むように構成された超音波エミッタ。
- リソグラフィ装置の投影システムと基板テーブルとの間の空間に閉じ込められた液体を、メガ音波洗浄液体の中に入れ込むように構成されたメガ音波エミッタ。
- 光学素子と基板テーブルとの空間に液体を有するように構成されたリソグラフィ装置において、投影システムの光学素子、基板テーブル、若しくはその両方を洗浄するための、前記空間を通じて洗浄流体を循環させることを含む方法。
- 光学素子と基板テーブルとの空間に液体を有するように構成されたリソグラフィ装置において、投影システムの光学素子、基板テーブル、若しくはその両方を被覆するための、前記空間を通じて被覆流体を循環させることを含む方法。
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US11/015,767 | 2004-12-20 | ||
US11/015,767 US7880860B2 (en) | 2004-12-20 | 2004-12-20 | Lithographic apparatus and device manufacturing method |
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JP2005364310A Expired - Fee Related JP4825510B2 (ja) | 2004-12-20 | 2005-12-19 | リソグラフィ装置 |
JP2008161707A Pending JP2008277854A (ja) | 2004-12-20 | 2008-06-20 | リソグラフィ装置とデバイス製造方法 |
JP2008161756A Pending JP2008227548A (ja) | 2004-12-20 | 2008-06-20 | リソグラフィ装置とデバイス製造方法 |
JP2008161719A Pending JP2008263221A (ja) | 2004-12-20 | 2008-06-20 | リソグラフィ装置とデバイス製造方法 |
JP2008161741A Pending JP2008227547A (ja) | 2004-12-20 | 2008-06-20 | リソグラフィ装置とデバイス製造方法 |
JP2011260597A Pending JP2012044227A (ja) | 2004-12-20 | 2011-11-29 | リソグラフィ装置 |
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JP2008161756A Pending JP2008227548A (ja) | 2004-12-20 | 2008-06-20 | リソグラフィ装置とデバイス製造方法 |
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Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE449982T1 (de) | 2003-04-11 | 2009-12-15 | Nikon Corp | Reinigungsverfahren für optik in immersionslithographie |
TWI518742B (zh) * | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8520184B2 (en) * | 2004-06-09 | 2013-08-27 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with measuring device |
EP3190605B1 (en) * | 2004-06-21 | 2018-05-09 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
JP2006024692A (ja) * | 2004-07-07 | 2006-01-26 | Toshiba Corp | レジストパターン形成方法 |
US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
JP4772306B2 (ja) * | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
KR101236120B1 (ko) * | 2004-10-26 | 2013-02-28 | 가부시키가이샤 니콘 | 기판 처리 방법, 노광 장치 및 디바이스 제조 방법 |
US20070242248A1 (en) * | 2004-10-26 | 2007-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device |
US7804576B2 (en) * | 2004-12-06 | 2010-09-28 | Nikon Corporation | Maintenance method, maintenance device, exposure apparatus, and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
JP2006261606A (ja) * | 2005-03-18 | 2006-09-28 | Canon Inc | 露光装置、露光方法及びデバイス製造方法 |
US7291850B2 (en) * | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7315033B1 (en) * | 2005-05-04 | 2008-01-01 | Advanced Micro Devices, Inc. | Method and apparatus for reducing biological contamination in an immersion lithography system |
KR100638107B1 (ko) * | 2005-06-09 | 2006-10-24 | 연세대학교 산학협력단 | 이머젼 박막층을 구비하는 광변조 미세개구 어레이 장치 및이를 이용한 고속 미세패턴 기록시스템 |
US7291569B2 (en) * | 2005-06-29 | 2007-11-06 | Infineon Technologies Ag | Fluids for immersion lithography systems |
JP2007012375A (ja) * | 2005-06-29 | 2007-01-18 | Toyota Motor Corp | 燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法 |
US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
JP5353005B2 (ja) * | 2005-07-11 | 2013-11-27 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
JP2007150102A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
JP2007266074A (ja) * | 2006-03-27 | 2007-10-11 | Toshiba Corp | 半導体装置の製造方法及び液浸リソグラフィーシステム |
CN102298274A (zh) * | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
CN102109773A (zh) * | 2006-05-22 | 2011-06-29 | 株式会社尼康 | 曝光方法、曝光装置以及维修方法 |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
KR20090023331A (ko) * | 2006-05-23 | 2009-03-04 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
US8564759B2 (en) * | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
KR20090033170A (ko) * | 2006-06-30 | 2009-04-01 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법 |
KR101523388B1 (ko) * | 2006-08-30 | 2015-05-27 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재 |
KR20090060270A (ko) * | 2006-09-08 | 2009-06-11 | 가부시키가이샤 니콘 | 클리닝용 부재, 클리닝 방법, 그리고 디바이스 제조 방법 |
US8040490B2 (en) * | 2006-12-01 | 2011-10-18 | Nikon Corporation | Liquid immersion exposure apparatus, exposure method, and method for producing device |
US8013975B2 (en) * | 2006-12-01 | 2011-09-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20080156356A1 (en) * | 2006-12-05 | 2008-07-03 | Nikon Corporation | Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method |
WO2008089990A2 (en) * | 2007-01-26 | 2008-07-31 | Carl Zeiss Smt Ag | Method for operating an immersion lithography apparatus |
US8654305B2 (en) | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
JP4366407B2 (ja) * | 2007-02-16 | 2009-11-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
KR20100031694A (ko) * | 2007-05-28 | 2010-03-24 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 |
US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
US7916269B2 (en) * | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
KR20100102580A (ko) * | 2007-12-17 | 2010-09-24 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
NL1036709A1 (nl) * | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
JP2010021370A (ja) * | 2008-07-10 | 2010-01-28 | Canon Inc | 液浸露光装置およびデバイス製造方法 |
TW201009895A (en) * | 2008-08-11 | 2010-03-01 | Nikon Corp | Exposure apparatus, maintaining method and device fabricating method |
EP2159638B1 (en) * | 2008-08-26 | 2015-06-17 | ASML Netherlands BV | Radiation source and lithographic apparatus |
NL2003363A (en) * | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
JP5120193B2 (ja) * | 2008-10-08 | 2013-01-16 | 株式会社ニコン | 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法 |
TW201017347A (en) * | 2008-10-31 | 2010-05-01 | Nikon Corp | Exposure device, exposure method, and device manufacturing method |
US8736631B2 (en) | 2009-07-17 | 2014-05-27 | Mitsubishi Electric Corporation | Facility operation display device, air-conditioning system, and non-transitory computer-readable medium |
NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
JP5404361B2 (ja) | 2009-12-11 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
CA2784148A1 (en) * | 2009-12-28 | 2011-07-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
NL2006127A (en) * | 2010-02-17 | 2011-08-18 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus. |
US20120019803A1 (en) * | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
US20120019802A1 (en) * | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium |
CA3202964A1 (en) | 2011-12-06 | 2013-06-13 | Delta Faucet Company | Ozone distribution in a faucet |
CN108463437B (zh) | 2015-12-21 | 2022-07-08 | 德尔塔阀门公司 | 包括消毒装置的流体输送系统 |
US20180032409A1 (en) | 2016-07-26 | 2018-02-01 | Netapp, Inc. | Backup and recovery of application data of an application executing in a virtual machine |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
JP2004165666A (ja) * | 2002-11-12 | 2004-06-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
JP2004289126A (ja) * | 2002-11-12 | 2004-10-14 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
JP2004289128A (ja) * | 2002-11-12 | 2004-10-14 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
WO2004105107A1 (ja) * | 2003-05-23 | 2004-12-02 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2006510146A (ja) * | 2002-12-13 | 2006-03-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
JP2006134999A (ja) * | 2004-11-04 | 2006-05-25 | Sony Corp | 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法 |
JP2006148093A (ja) * | 2004-11-18 | 2006-06-08 | Internatl Business Mach Corp <Ibm> | 浸漬リソグラフィ・システムにおいて半導体基板を洗浄する方法及び装置 |
JP2006520104A (ja) * | 2003-03-11 | 2006-08-31 | ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル | 二酸化炭素を使用した浸漬リソグラフィ方法 |
Family Cites Families (275)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE224448C (ja) | ||||
DE242880C (ja) | ||||
DE221563C (ja) | ||||
DE206607C (ja) | ||||
US738649A (en) * | 1903-01-21 | 1903-09-08 | Walter D Young | Contact-shoe for electric railways. |
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4468120A (en) * | 1981-02-04 | 1984-08-28 | Nippon Kogaku K.K. | Foreign substance inspecting apparatus |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS6265326U (ja) | 1985-10-16 | 1987-04-23 | ||
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS62121417U (ja) | 1986-01-24 | 1987-08-01 | ||
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPS63157419U (ja) | 1987-03-31 | 1988-10-14 | ||
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5257128A (en) | 1988-06-22 | 1993-10-26 | Board Of Regents, The University Of Texas System | Freezing/perfusion microscope stage |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JP3158446B2 (ja) | 1990-12-13 | 2001-04-23 | 株式会社ニコン | 表面位置検出装置及び表面位置検出方法、並びに露光装置、露光方法及び半導体製造方法 |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06104167A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | 露光装置及び半導体装置の製造方法 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6104687A (en) * | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US6503711B1 (en) * | 1997-06-18 | 2003-01-07 | Ulrich J. Krull | Nucleic acid biosensor diagnostics |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
AU1175799A (en) * | 1997-11-21 | 1999-06-15 | Nikon Corporation | Projection aligner and projection exposure method |
JPH11283903A (ja) * | 1998-03-30 | 1999-10-15 | Nikon Corp | 投影光学系検査装置及び同装置を備えた投影露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
WO1999031717A1 (fr) | 1997-12-12 | 1999-06-24 | Nikon Corporation | Procede d'exposition par projection et graveur a projection |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US6459472B1 (en) | 1998-05-15 | 2002-10-01 | Asml Netherlands B.V. | Lithographic device |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2001121063A (ja) | 1999-10-26 | 2001-05-08 | Tokyo Electron Ltd | フィルタ装置及び液処理装置 |
JP2000147204A (ja) | 1998-11-06 | 2000-05-26 | Nikon Corp | 保護膜を具える光学素子及びその製造方法及び光学装置及び半導体露光装置 |
US6379746B1 (en) | 1999-02-02 | 2002-04-30 | Corning Incorporated | Method for temporarily protecting glass articles |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP2000323396A (ja) | 1999-05-13 | 2000-11-24 | Canon Inc | 露光方法、露光装置、およびデイバイス製造方法 |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
US6127101A (en) | 1999-10-12 | 2000-10-03 | Air Products And Chemicals, Inc. | Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
US6466365B1 (en) * | 2000-04-07 | 2002-10-15 | Corning Incorporated | Film coated optical lithography elements and method of making |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
US6301055B1 (en) | 2000-08-16 | 2001-10-09 | California Institute Of Technology | Solid immersion lens structures and methods for producing solid immersion lens structures |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002236111A (ja) | 2001-02-09 | 2002-08-23 | Masahiro Nishikawa | 液体ポンプの気泡検出方法及びその装置 |
US20020163629A1 (en) | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
EP1446703A2 (en) * | 2001-11-07 | 2004-08-18 | Applied Materials, Inc. | Optical spot grid array printer |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
TWI249651B (en) * | 2002-06-14 | 2006-02-21 | Asml Netherlands Bv | EUV lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there |
AU2002950185A0 (en) * | 2002-07-12 | 2002-09-12 | The Australian National University | Enzyme inhibitors |
JP2005536775A (ja) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US6829035B2 (en) * | 2002-11-12 | 2004-12-07 | Applied Materials Israel, Ltd. | Advanced mask cleaning and handling |
CN101382738B (zh) * | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE60319658T2 (de) * | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
AU2003284672A1 (en) | 2002-12-03 | 2004-06-23 | Nikon Corporation | Contaminant removing method and device, and exposure method and apparatus |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
KR101101737B1 (ko) | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
SG152063A1 (en) | 2002-12-10 | 2009-05-29 | Nikon Corp | Exposure apparatus and method for producing device |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US6992750B2 (en) * | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
AU2003289237A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
KR20130010039A (ko) * | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TW200421444A (en) | 2002-12-10 | 2004-10-16 | Nippon Kogaku Kk | Optical device and projecting exposure apparatus using such optical device |
WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
EP1732075A3 (en) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
WO2004093159A2 (en) | 2003-04-09 | 2004-10-28 | Nikon Corporation | Immersion lithography fluid control system |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR20180089562A (ko) | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
KR101323993B1 (ko) * | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
SG194264A1 (en) | 2003-04-11 | 2013-11-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
WO2004095135A2 (en) | 2003-04-17 | 2004-11-04 | Nikon Corporation | Optical arrangement of autofocus elements for use with immersion lithography |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (ja) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
EP1652003B1 (en) | 2003-07-08 | 2015-01-07 | Nikon Corporation | Wafer table for immersion lithography |
JP4835155B2 (ja) * | 2003-07-09 | 2011-12-14 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US7738074B2 (en) | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101238114B1 (ko) | 2003-09-03 | 2013-02-27 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
WO2005031820A1 (ja) | 2003-09-26 | 2005-04-07 | Nikon Corporation | 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US8067147B2 (en) * | 2003-12-23 | 2011-11-29 | Koninklijke Philips Electronics N.V. | Removable pellicle for immersion lithography |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191381A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
JP2005191393A (ja) | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7145641B2 (en) * | 2003-12-31 | 2006-12-05 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (zh) | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
KR101233879B1 (ko) | 2004-01-16 | 2013-02-15 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
KR101204157B1 (ko) | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
JP4018647B2 (ja) | 2004-02-09 | 2007-12-05 | キヤノン株式会社 | 投影露光装置およびデバイス製造方法 |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
EP1724815B1 (en) * | 2004-02-10 | 2012-06-13 | Nikon Corporation | Aligner, device manufacturing method, maintenance method and aligning method |
EP1714192A1 (en) | 2004-02-13 | 2006-10-25 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
JP2007523383A (ja) | 2004-02-18 | 2007-08-16 | コーニング インコーポレイテッド | 深紫外光による大開口数結像のための反射屈折結像光学系 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
JP4510494B2 (ja) | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
JP2005286068A (ja) | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8520184B2 (en) | 2004-06-09 | 2013-08-27 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with measuring device |
US8698998B2 (en) | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
JP4677833B2 (ja) | 2004-06-21 | 2011-04-27 | 株式会社ニコン | 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法 |
DE102004033208B4 (de) | 2004-07-09 | 2010-04-01 | Vistec Semiconductor Systems Gmbh | Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv |
US7307263B2 (en) | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
KR200363781Y1 (ko) | 2004-07-21 | 2004-10-11 | 주식회사 엘지화학 | 보강구조를 이용한 이중바닥시스템 상판용 고강성 패널 |
US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
US20060026755A1 (en) | 2004-08-05 | 2006-02-09 | Bain Colin C | Patient lift with integrated foot push pad |
JP4772306B2 (ja) * | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
US7385670B2 (en) | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
US20090021709A1 (en) | 2004-10-13 | 2009-01-22 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP2006120674A (ja) * | 2004-10-19 | 2006-05-11 | Canon Inc | 露光装置及び方法、デバイス製造方法 |
JP2006133661A (ja) * | 2004-11-09 | 2006-05-25 | Minebea Co Ltd | カラーホイールおよびその製造方法と製造用治具 |
US7732123B2 (en) * | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
US7804576B2 (en) | 2004-12-06 | 2010-09-28 | Nikon Corporation | Maintenance method, maintenance device, exposure apparatus, and device manufacturing method |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006310706A (ja) | 2005-05-02 | 2006-11-09 | Nikon Corp | 光学部品の洗浄方法、液浸投影露光装置および露光方法 |
US20060250588A1 (en) | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
US7315033B1 (en) * | 2005-05-04 | 2008-01-01 | Advanced Micro Devices, Inc. | Method and apparatus for reducing biological contamination in an immersion lithography system |
WO2006122578A1 (en) | 2005-05-17 | 2006-11-23 | Freescale Semiconductor, Inc. | Contaminant removal apparatus and method therefor |
US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
US7262422B2 (en) * | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
DE102005031792A1 (de) | 2005-07-07 | 2007-01-11 | Carl Zeiss Smt Ag | Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür |
JP2007029973A (ja) | 2005-07-25 | 2007-02-08 | Sony Corp | レーザ加工装置とその加工方法及びデブリ回収装置とその回収方法 |
JP2007088328A (ja) | 2005-09-26 | 2007-04-05 | Toshiba Corp | 液浸型露光装置の洗浄方法 |
JP2007103658A (ja) * | 2005-10-04 | 2007-04-19 | Canon Inc | 露光方法および装置ならびにデバイス製造方法 |
US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
CN1963673A (zh) | 2005-11-11 | 2007-05-16 | 台湾积体电路制造股份有限公司 | 浸润式微影曝光设备及方法 |
JP2007142217A (ja) | 2005-11-18 | 2007-06-07 | Taiwan Semiconductor Manufacturing Co Ltd | イマージョン式リソグラフィ露光装置およびその方法 |
JP2007150102A (ja) | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7462850B2 (en) | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
US7405417B2 (en) * | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
US7522263B2 (en) * | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20070146658A1 (en) * | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP4704221B2 (ja) * | 2006-01-26 | 2011-06-15 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
JP2007227543A (ja) | 2006-02-22 | 2007-09-06 | Toshiba Corp | 液浸光学装置、洗浄方法及び液浸露光方法 |
JP2007227580A (ja) | 2006-02-23 | 2007-09-06 | Sony Corp | 液浸型露光装置および液浸型露光方法 |
JP2007266074A (ja) | 2006-03-27 | 2007-10-11 | Toshiba Corp | 半導体装置の製造方法及び液浸リソグラフィーシステム |
JP2007294817A (ja) | 2006-04-27 | 2007-11-08 | Sokudo:Kk | 基板処理方法、基板処理システムおよび基板処理装置 |
US7628865B2 (en) | 2006-04-28 | 2009-12-08 | Asml Netherlands B.V. | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
CN102298274A (zh) | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
US7969548B2 (en) | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
KR20090023331A (ko) | 2006-05-23 | 2009-03-04 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
JP2007317987A (ja) | 2006-05-29 | 2007-12-06 | Sokudo:Kk | 基板処理装置および基板処理方法 |
KR20090033170A (ko) | 2006-06-30 | 2009-04-01 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법 |
US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
US7916269B2 (en) * | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
JP5017232B2 (ja) * | 2007-10-31 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | クリーニング装置および液浸リソグラフィ装置 |
NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
NL1036306A1 (nl) * | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
US8339572B2 (en) * | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-12-20 US US11/015,767 patent/US7880860B2/en not_active Expired - Fee Related
-
2005
- 2005-12-19 JP JP2005364310A patent/JP4825510B2/ja not_active Expired - Fee Related
-
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- 2007-01-23 US US11/656,560 patent/US8115899B2/en not_active Expired - Fee Related
-
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-
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- 2011-09-23 US US13/242,401 patent/US8941811B2/en not_active Expired - Fee Related
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-
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-
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- 2017-06-15 US US15/624,419 patent/US10509326B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH06168866A (ja) * | 1992-11-27 | 1994-06-14 | Canon Inc | 液浸式投影露光装置 |
JPH11162831A (ja) * | 1997-11-21 | 1999-06-18 | Nikon Corp | 投影露光装置及び投影露光方法 |
JP2004165666A (ja) * | 2002-11-12 | 2004-06-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
JP2004289126A (ja) * | 2002-11-12 | 2004-10-14 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
JP2004289128A (ja) * | 2002-11-12 | 2004-10-14 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
JP2006510146A (ja) * | 2002-12-13 | 2006-03-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
JP2006520104A (ja) * | 2003-03-11 | 2006-08-31 | ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル | 二酸化炭素を使用した浸漬リソグラフィ方法 |
WO2004093130A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
WO2004105107A1 (ja) * | 2003-05-23 | 2004-12-02 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2006134999A (ja) * | 2004-11-04 | 2006-05-25 | Sony Corp | 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法 |
JP2006148093A (ja) * | 2004-11-18 | 2006-06-08 | Internatl Business Mach Corp <Ibm> | 浸漬リソグラフィ・システムにおいて半導体基板を洗浄する方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060132731A1 (en) | 2006-06-22 |
US20110109887A1 (en) | 2011-05-12 |
JP2008277854A (ja) | 2008-11-13 |
US9703210B2 (en) | 2017-07-11 |
US20080002162A1 (en) | 2008-01-03 |
US7880860B2 (en) | 2011-02-01 |
US8638419B2 (en) | 2014-01-28 |
US8941811B2 (en) | 2015-01-27 |
US8115899B2 (en) | 2012-02-14 |
US20170285488A1 (en) | 2017-10-05 |
JP2008227548A (ja) | 2008-09-25 |
JP2008263221A (ja) | 2008-10-30 |
JP2006179909A (ja) | 2006-07-06 |
US10509326B2 (en) | 2019-12-17 |
US20120008119A1 (en) | 2012-01-12 |
JP4825510B2 (ja) | 2011-11-30 |
US20150116675A1 (en) | 2015-04-30 |
JP2008227547A (ja) | 2008-09-25 |
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