JP4549866B2 - 表示装置の製造方法 - Google Patents
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- JP4549866B2 JP4549866B2 JP2004564063A JP2004564063A JP4549866B2 JP 4549866 B2 JP4549866 B2 JP 4549866B2 JP 2004564063 A JP2004564063 A JP 2004564063A JP 2004564063 A JP2004564063 A JP 2004564063A JP 4549866 B2 JP4549866 B2 JP 4549866B2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (5)
- ロールツーロール方式により加工処理を行う表示装置の製造方法であって、
組成物の吐出口が一軸方向に複数個配列した液滴吐出手段を備えたパターン形成手段により、導電性材料を含む組成物を、可撓性を有する基板上に描画して、配線パターンを形成し、
前記パターン形成手段により、高分子樹脂を含む組成物を、前記配線パターン上に描画してマスクパターンを形成し、
気体をプラズマ化すると共に該プラズマの噴出口が一軸方向に複数個配列して形成された被膜の除去を行う被膜除去手段により、前記配線パターンを、選択的に除去し、
前記被膜除去手段により、前記マスクパターンを除去することを特徴とする表示装置の製造方法。 - ロールツーロール方式により加工処理を行う表示装置の製造方法であって、
組成物の吐出口が一軸方向に複数個配列した液滴吐出手段を備えたパターン形成手段により、導電性材料を含む組成物を、可撓性を有する基板上に描画して、配線パターンを大気圧又は大気圧近傍の圧力下で形成し、
前記パターン形成手段により、高分子樹脂を含む組成物を、前記配線パターン上に描画してマスクパターンを形成し、
気体をプラズマ化すると共に該プラズマの噴出口が一軸方向に複数個配列して形成された被膜の除去を大気圧又は大気圧近傍の圧力下で行う被膜除去手段により、前記配線パターンを、選択的に除去し、
前記被膜除去手段により、前記マスクパターンを除去することを特徴とする表示装置の製造方法。 - ロールツーロール方式により加工処理を行う表示装置の製造方法であって、
組成物の吐出口が一軸方向に複数個配列した液滴吐出手段を備えたパターン形成手段により、導電性材料を含む組成物を、可撓性を有する基板上に描画して、配線パターンを大気圧又は大気圧近傍の圧力下で形成し、
前記パターン形成手段により、高分子樹脂を含む組成物を、前記配線パターン上に描画してマスクパターンを形成し、
気体をプラズマ化すると共に該プラズマの噴出口が一軸方向に複数個配列して形成された被膜の除去を大気圧又は大気圧近傍の圧力下で行う被膜除去手段により、前記配線パターンを、選択的に除去し、
前記被膜除去手段により、前記マスクパターンを除去し、
前記被膜除去手段は、複数のノズル体を有し、
前記ノズル体は、内周気体供給筒内にてプラズマ化し該プラズマを噴出する気体噴出口と、
前記内周気体供給筒の外郭に設けられた外周気体排気筒と、
前記外周気体排気筒の外郭に設けられた不活性気体供給口と、
前記不活性気体供給口の外郭に設けられた不活性気体排気口とを有することを特徴とする表示装置の製造方法。 - ロールツーロール方式により加工処理を行う表示装置の製造方法であって、
組成物の吐出口が一軸方向に複数個配列した液滴吐出手段を備えたパターン形成手段により、導電性材料を含む組成物を、可撓性を有する基板上に描画して、配線パターンを大気圧又は大気圧近傍の圧力下で形成し、
前記パターン形成手段により、高分子樹脂を含む組成物を、前記配線パターン上に描画してマスクパターンを形成し、
気体をプラズマ化すると共に該プラズマの噴出口が一軸方向に複数個配列して形成された被膜の除去を大気圧又は大気圧近傍の圧力下で行う被膜除去手段により、前記配線パターンを、選択的に除去し、
前記被膜除去手段により、前記マスクパターンを除去し、
前記被膜除去手段は、複数のノズル体を有し、
前記ノズル体は、気体供給手段に接続された内周気体供給筒内にてプラズマ化し該プラズマを噴出する気体噴出口と、
前記内周気体供給筒の外郭に設けられた気体排気手段に接続された外周気体排気筒と、
前記外周気体排気筒の外郭に設けられた不活性気体供給口と、
前記不活性気体供給口の外郭に設けられた不活性気体排気口とを有し、
前記気体供給手段と前記気体排気手段の間に気体を循環させる気体精製手段が接続されていることを特徴とする表示装置の製造方法。 - ロールツーロール方式により加工処理を行う表示装置の製造方法であって、
プラズマの噴出口が一軸方向に複数個配列したノズル体を備えた被膜形成手段により、可撓性を有する基板上に金属膜を形成し、
組成物の吐出口が一軸方向に複数個配列した液滴吐出手段により、高分子樹脂を含む組成物を、前記金属膜上に描画して、マスクパターンを形成し、
プラズマの噴出口が一軸方向に複数個配列したノズル体を備えた第1の被膜除去手段により、前記金属膜を選択的に除去してゲート電極及び配線を形成し、
プラズマの噴出口が一軸方向に複数個配列したノズル体を備えた第2の被膜除去手段により、前記マスクパターンを除去することを特徴とする表示装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003028924 | 2003-02-05 | ||
JP2003028924 | 2003-02-05 | ||
PCT/JP2004/000930 WO2004070810A1 (ja) | 2003-02-05 | 2004-01-30 | 表示装置の製造方法 |
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JP2010110438A Division JP5106573B2 (ja) | 2003-02-05 | 2010-05-12 | 薄膜トランジスタの製造方法及び表示装置の製造方法 |
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JPWO2004070810A1 JPWO2004070810A1 (ja) | 2006-05-25 |
JP4549866B2 true JP4549866B2 (ja) | 2010-09-22 |
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JP2004564063A Expired - Fee Related JP4549866B2 (ja) | 2003-02-05 | 2004-01-30 | 表示装置の製造方法 |
JP2010110438A Expired - Fee Related JP5106573B2 (ja) | 2003-02-05 | 2010-05-12 | 薄膜トランジスタの製造方法及び表示装置の製造方法 |
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EP (1) | EP1592049A1 (ja) |
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- 2004-01-30 WO PCT/JP2004/000930 patent/WO2004070810A1/ja active Application Filing
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Also Published As
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US7176069B2 (en) | 2007-02-13 |
CN1745462A (zh) | 2006-03-08 |
US20070172972A1 (en) | 2007-07-26 |
JPWO2004070810A1 (ja) | 2006-05-25 |
CN100459060C (zh) | 2009-02-04 |
US20040224433A1 (en) | 2004-11-11 |
JP5106573B2 (ja) | 2012-12-26 |
EP1592049A1 (en) | 2005-11-02 |
US7736955B2 (en) | 2010-06-15 |
WO2004070810A1 (ja) | 2004-08-19 |
JP2010250327A (ja) | 2010-11-04 |
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