JP4371521B2 - 電力用半導体素子およびその製造方法 - Google Patents

電力用半導体素子およびその製造方法 Download PDF

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Publication number
JP4371521B2
JP4371521B2 JP2000060480A JP2000060480A JP4371521B2 JP 4371521 B2 JP4371521 B2 JP 4371521B2 JP 2000060480 A JP2000060480 A JP 2000060480A JP 2000060480 A JP2000060480 A JP 2000060480A JP 4371521 B2 JP4371521 B2 JP 4371521B2
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JP
Japan
Prior art keywords
base layer
type base
conductivity type
layer
trench
Prior art date
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Expired - Fee Related
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JP2000060480A
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English (en)
Japanese (ja)
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JP2001250947A (ja
JP2001250947A5 (enExample
Inventor
秀隆 服部
正一 山口
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000060480A priority Critical patent/JP4371521B2/ja
Priority to US09/799,026 priority patent/US6495871B2/en
Priority to EP01104596A priority patent/EP1132970A3/en
Publication of JP2001250947A publication Critical patent/JP2001250947A/ja
Priority to US10/294,583 priority patent/US6670658B2/en
Priority to US10/696,040 priority patent/US6894347B2/en
Priority to US10/962,713 priority patent/US6921687B2/en
Publication of JP2001250947A5 publication Critical patent/JP2001250947A5/ja
Application granted granted Critical
Publication of JP4371521B2 publication Critical patent/JP4371521B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/035—Etching a recess in the emitter region 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000060480A 2000-03-06 2000-03-06 電力用半導体素子およびその製造方法 Expired - Fee Related JP4371521B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000060480A JP4371521B2 (ja) 2000-03-06 2000-03-06 電力用半導体素子およびその製造方法
US09/799,026 US6495871B2 (en) 2000-03-06 2001-03-06 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
EP01104596A EP1132970A3 (en) 2000-03-06 2001-03-06 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
US10/294,583 US6670658B2 (en) 2000-03-06 2002-11-15 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
US10/696,040 US6894347B2 (en) 2000-03-06 2003-10-30 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
US10/962,713 US6921687B2 (en) 2000-03-06 2004-10-13 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000060480A JP4371521B2 (ja) 2000-03-06 2000-03-06 電力用半導体素子およびその製造方法

Publications (3)

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JP2001250947A JP2001250947A (ja) 2001-09-14
JP2001250947A5 JP2001250947A5 (enExample) 2005-08-11
JP4371521B2 true JP4371521B2 (ja) 2009-11-25

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JP2000060480A Expired - Fee Related JP4371521B2 (ja) 2000-03-06 2000-03-06 電力用半導体素子およびその製造方法

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US (4) US6495871B2 (enExample)
EP (1) EP1132970A3 (enExample)
JP (1) JP4371521B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021251764A1 (ko) * 2020-06-10 2021-12-16 한국전자통신연구원 모스 구동 사이리스터 소자

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* Cited by examiner, † Cited by third party
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WO2021251764A1 (ko) * 2020-06-10 2021-12-16 한국전자통신연구원 모스 구동 사이리스터 소자
US11784247B2 (en) 2020-06-10 2023-10-10 Electronics And Telecommunications Research Institute MOS(metal oxide silicon) controlled thyristor device

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US6921687B2 (en) 2005-07-26
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US6495871B2 (en) 2002-12-17
JP2001250947A (ja) 2001-09-14
US20040089886A1 (en) 2004-05-13
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EP1132970A3 (en) 2008-02-20
US6670658B2 (en) 2003-12-30

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