JP4755439B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 386
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000012535 impurity Substances 0.000 claims description 111
- 210000000746 body region Anatomy 0.000 claims description 73
- 238000005530 etching Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 36
- 239000010410 layer Substances 0.000 description 480
- 230000008569 process Effects 0.000 description 21
- 238000002513 implantation Methods 0.000 description 20
- 238000001020 plasma etching Methods 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 18
- 238000000059 patterning Methods 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 230000005684 electric field Effects 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- 229910052698 phosphorus Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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Description
(1)Np×Wp=Nn−×Wn−+Nn×Wn
Np,Nn−,Nnは、それぞれP型層104、中間層102、N型層103の不純物濃度である。また、Wp,Wn−,WnはそれぞれP型層104、中間層102、N型層103の横方向の幅である。
(2)Np×Wp=Qp、Nn−×Wn−+Nn×Wn=Qnとし、Qp=Qn≦2.0×1012cm−2となるように設定する。本数値計算においては、Qp=Qn=7.5×1011cm−2とした。また、本構造の有効面積SaをSa=0.0625cm2とした。
Claims (9)
- 第1導電型の半導体を含み、動作時の電流の主経路となる第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、前記電流の流路を横切る方向に交互に並ぶように形成された半導体装置において、
前記第1の半導体層と前記第2の半導体層との間に、前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層と、
前記第1の半導体層および前記第2の半導体層と接するように前記中間層の表面領域に形成され、または前記第1の半導体層、前記第2の半導体層、および前記中間層の表面を被覆するように形成された、第2導電型の半導体を含むボディ領域と、
前記第1の半導体層、前記第2の半導体層、および前記中間層によって前記ボディ領域と隔てられて、前記第1の半導体層の表面上に形成された、前記第1の半導体層よりも不純物濃度の高い第1導電型の半導体を含む第3の半導体層と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置。 - 第1導電型の半導体を含み、動作時の電流の主経路となる第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、前記電流の流路を横切る方向に交互に並ぶように形成された半導体装置において、
前記第1の半導体層と前記第2の半導体層との間に、前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層と、
前記第1の半導体層および前記第2の半導体層と接するように前記中間層の表面領域に形成され、または前記第1の半導体層、前記第2の半導体層、および前記中間層の表面を被覆するように形成された、第2導電型の半導体を含むボディ領域と、
前記第1の半導体層、前記第2の半導体層、および前記中間層によって前記ボディ領域と隔てられて、前記第1の半導体層の表面上に形成された、第2導電型の半導体を含む第3の半導体層と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置。 - 前記ボディ領域の表面領域において、前記第1の半導体層よりも不純物濃度の高い第1導電型の半導体を含む半導体領域と、
絶縁膜を隔てて前記ボディ領域と隣接する第1の電極と、
前記第2の半導体層および前記半導体領域上に形成された第2の電極と、
前記第3の半導体層上に形成された第3の電極と、
を更に備えていることを特徴とする請求項1または請求項2に記載の半導体装置。 - 第1導電型の半導体を含み、動作時の電流の主経路となる第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、前記電流の流路を横切る方向に交互に並ぶように形成された半導体装置において、
前記第1の半導体層と前記第2の半導体層との間に、前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層と、
前記第1の半導体層および前記第2の半導体層と接するように前記中間層の表面領域に形成され、または前記第1の半導体層、前記第2の半導体層、および前記中間層の表面を被覆するように形成された、第2導電型の半導体を含むボディ領域と、
前記ボディ領域が形成された表面とは反対側の前記第1の半導体層の表面上に形成された、前記第1の半導体層とショットキー接合を形成する第3の電極と、
を備え、
前記第2の半導体層および前記第3の電極は、前記中間層によって隔てられている
ことを特徴とする半導体装置。 - 前記ボディ領域の表面領域において、前記第1の半導体層よりも不純物濃度の高い第1導電型の半導体を含む半導体領域と、
絶縁膜を隔てて前記ボディ領域と隣接する第1の電極と、
前記第2の半導体層および前記半導体領域上に形成された第2の電極と
を更に備えることを特徴とする請求項4に記載の半導体装置。 - 第1導電型の半導体を含む第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、電流の流路を横切る方向に交互に並ぶように形成された半導体装置の製造方法において、
前記第1の半導体層よりも不純物濃度の高い第1導電型の半導体を含む第3の半導体層上に、前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層を形成する工程と、
前記中間層をエッチングし、第1の溝を形成する工程と、
第2導電型の半導体によって前記第1の溝を埋めることにより、前記第2の半導体層を形成する工程と、
前記中間層をエッチングし、前記第1の溝と隔てて第2の溝を形成する工程と、
前記中間層よりも不純物濃度が高い第1導電型の半導体によって前記第2の溝を埋めることにより、前記第1の半導体層を形成する工程と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置の製造方法。 - 第1導電型の半導体を含む第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、電流の流路を横切る方向に交互に並ぶように形成された半導体装置の製造方法において、
前記第1の半導体層よりも不純物濃度の高い第1導電型の半導体を含む第3の半導体層上に前記第1の半導体層を形成する工程と、
前記第1の半導体層をエッチングし、第1の溝を形成する工程と、
前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層を前記第1の溝の表面に形成すると共に、前記中間層に第2の溝を形成する工程と、
第2導電型の半導体によって前記第2の溝を埋めることにより、前記第2の半導体層を形成する工程と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置の製造方法。 - 第1導電型の半導体を含む第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、電流の流路を横切る方向に交互に並ぶように形成された半導体装置の製造方法において、
第2導電型の半導体を含む第3の半導体層上に、前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層を形成する工程と、
前記中間層をエッチングし、第1の溝を形成する工程と、
第2導電型の半導体によって前記第1の溝を埋めることにより、前記第2の半導体層を形成する工程と、
前記中間層をエッチングし、前記第1の溝と隔てて第2の溝を形成する工程と、
前記中間層よりも不純物濃度が高い第1導電型の半導体によって前記第2の溝を埋めることにより、前記第1の半導体層を形成する工程と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置の製造方法。 - 第1導電型の半導体を含む第1の半導体層と、第2導電型の半導体で溝を埋めることにより形成された第2の半導体層とが、電流の流路を横切る方向に交互に並ぶように形成された半導体装置の製造方法において、
第2導電型の半導体を含む第3の半導体層上に前記第1の半導体層を形成する工程と、
前記第1の半導体層をエッチングし、第1の溝を形成する工程と、
前記第1の半導体層よりも不純物濃度の低い第1導電型の半導体を含む中間層を前記第1の溝の表面に形成すると共に、前記中間層に第2の溝を形成する工程と、
第2導電型の半導体によって前記第2の溝を埋めることにより、前記第2の半導体層を形成する工程と、
を備え、
前記第2の半導体層および前記第3の半導体層は、前記中間層によって隔てられている
ことを特徴とする半導体装置の製造方法。
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