JP4173556B2 - 紫外/青色光を可視光に効率良く変換する紫外/青色led―蛍光体装置 - Google Patents
紫外/青色光を可視光に効率良く変換する紫外/青色led―蛍光体装置 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 8
- 230000031700 light absorption Effects 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 description 27
- 239000011521 glass Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000006750 UV protection Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- -1 red Chemical compound 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
本発明は、紫外/青色光を放出する光放出ダイオード(LED)及び紫外/青色光により励起可能な可視光放出蛍光体を備える光放出装置に関するものである。このような光放出装置は本願人より出願された特開平5−152609号公報及び国際公開97/48138号に記載されている。
ここで、用語「紫外/青色光LED」は、電磁スペクトラムの紫外(UV)域、又は青色の波長域或いは紫外域及び青色波長域の両方の放射を放出するLEDを意味する。
可視光放出ダイオード(LED)は周知である。これらのLEDは基本材料としてAlGaAs又はInGaAlPを主体とする多層エピタキシャル層構造体である。これらのLEDにおいて、光は約3.5の屈折率を有する活性層で発生し等方的な角度分布で放出される。この光はLEDから出射するため界面を通過しなければならない。このLEDは、典型的には屈折率が約1.5のエポキシで封止されている。スネルの法則を適用すると、エポキシとの界面の法線に対して約0.443ラジアンの角度θの範囲内で活性層から出射した光だけがLED積層体の上側から出射することができる。これよりも大きな角度の場合、全反射が生じてしまう。これは、(1−cos θ)の光の部分つまり9.6%の光だけしか利用できないことを意味する。
この課題は認識されており、可視光放出LEDの効率はLED積層体の側から出射した可視光であるいわゆるエッジ光を見る側に向けて反射することにより顕著に増強される。このLEDのエッジ放出は、内部損失が小さくLED積層体の上部又は底部から内部反射した光が相当吸収されることなくエッジから出射できる場合に特に重要である。可視光のエポキシ樹脂から空気中への出射は、図1Aに示すように、エポキシ11をLED積層体13及びLEDが配置されているカップ状ヘッダ14の寸法に比べて相対的に大きな寸法のドーム12の形状とすることにより比較的効率よく行なわれる。
この大きな寸法とすることにより、LEDから出射した上側光及びエッジ光の大部分はドーム−空気界面に入射する際法線に対して小さな角度を有し、この光の大部分の光はこの界面を透過する。
最近のGaNを主体とするエピタキシャルデバイスの開発により、紫外/青色レーザ及び紫外/青色LEDの製造が可能になった。ある用途の場合、LEDからの紫外/青色光を蛍光体を用いて可視光(例えば、赤、緑、青又は白色)に変換することが、可視光を放出するLEDを直接用いる場合よりも一層有益な場合がある。このような紫外/青色−蛍光体装置は、例えばより広いカラー範囲にわたって変換を行なうので、表示の用途及び照明の用途について重要である。
この装置の実施を成功させることは、勿論、紫外/青色光から可視光への変換効率及び発生した可視光をこの装置から効率よく取り出すことに依存している。
発明の目的及び概要
従って、本発明の目的は、この変換効率及び紫外/青色LED−蛍光体装置から光を取り出す効率を増大することにある。
本発明の別の目的は、この装置から出射する光のスペクトラル分布を変更することにある。
GaNを主体とする紫外/青色LEDにおいて、紫外/青色光は、GaAsを主体とする可視光LEDの活性層の屈折率の先に説明した3.5の値よりも相当小さい約2.5の屈折率を有する活性層から発生する。この光の角度分布も等方的である。この屈折率が一層小さいことにより、一層大量の紫外/青色光がLED積層体の上側からエポキシに放出され、エッジ光はあまり重要でなくなることが考えられる。
しかしながら、スネルの法則を適用すると、エポキシとの界面の法線に対してθ=0.644ラジアンの角度内で活性層から発生した光だけがLEDの上側からエポキシに最終的に出射することができる。一層大きな角度の場合、依然として全反射が生じてしまう。これは、この場合(1−cos θ)の部分つまり約20%の光しか用いることができないことを意味する。従って、発生した紫外/青色光の約80%が喪失し、LED積層体の紫外/青色光の吸収が比較的小さい場合エッジ光が依然として重要である。
従って、本発明の第1の概念は、反射体及び蛍光体を使用し適切に位置決めすることにより、この装置においてエッジ光の大部分を利用することにある。
本発明の第2の概念は、この装置において1個又はそれ以上の誘電体フィルタを用いることにより、紫外/青色LED−蛍光体装置から放出された可視光の種々の角度にわたる放出及びカラーを改良することである。
本発明においては、照明及び/又は表示の用途に用いられる光放出装置は、反射性の側壁を有する凹部内に位置する紫外/青色LEDと、LEDを包囲すると共に凹部に充填される光透過性材料と、光透過性材料中に分散され又は前記LEDの表面上に付着した粒子形態の蛍光体とを含む。この側壁は紫外/青色光及び可視光を反射し、従って装置の効率を増大する。
LEDの上側及び/又は凹部を覆う紫外/青色光吸収ガラスプレートの下側に位置する光学フィルタは、放出された光の効率及び/又はスペクトラル特性を増大する。例えば、このLEDの2次元アレイの場合、関連するアレイのカラーフィルタを用いて白色光をカラー光に変換し又はカラー光の色純度を増大することができる。
好適実施例の説明
本発明の光放出装置で用いられる紫外/青色LEDは図1Aに示す形式の可視光LEDの構造と同様な構造であり、すなわち、この構造体、少なくとも、下側のオーミックコンタクト層1、基板2、下側及び上側の広いバンドギャップの光閉じ込め層3及び5により挟まれた活性層4、広いバンドギャップの注入/窓層5、及び上側オーミックコンタクト層6を含んでいる。一方、紫外/青色LEDはGaAs及びその合金の代わりにGaN及びその合金を主体とする。このLEDは、ガイド層及びバッファ層のような1個又はそれ以上の付加的な層を含むことができる。さらに、注入/窓層はそれ自身バンドギャップの勾配を有する多層構造体とすることができる。
このようなGaNを主体とするLEDについての詳細な説明は国際出願WO97/48138号に見出すことができる。
実施例1
図2を参照するに、本発明の装置20は、図1Bに示すヘッダ14と同様な(例えば、プラスチックの)カップ状の凹部が形成されているヘッダ(支持体)22内に配置した紫外/青色LED積層体21を含む。LED21により発生した紫外/青色光及び蛍光体24により発生した可視光の両方を反射するミラー23をカップの内側に設ける。視認側を前側と称する場合、電気的接続部を有する給電体は図1Bに示す構造と同様に後側に配置することができる。
特別な場合、図1のヘッダは絶縁領域17により2個の導電性部分14a及び14bに分割され、これら2個の導電性部分からリード部を外部に延在させる。LED積層体13は下側のオーミックコンタクト層1を介して部分14aと接触し、リード線7は部分14bを上側のオーミックコンタクト層6に接続する。
カップは透明材料25、好ましくは脂環式のエポキシのような紫外/青色光に耐久性を有するエポキシで充填され、この透明材料中に蛍光体24を均質に混合する。蛍光体の粒子密度と粒子サイズとの積は、紫外/青色光の大部分が可視光に変換されるように十分に大きくする必要がある。蛍光体粒子により吸収されなかった紫外/青色光が空気中に出射するのを防止するため、カップ状のヘッダの上側に小さな平坦なガラスプレートである吸収体26を配置することができる。蛍光体粒子24により吸収されなかった周辺光はミラー23により反射し、再び吸収する機会が与えられる。従って、この装置の効率は増大されることになる。
エポキシ中に蛍光体粒子を混合する利点は、蛍光体層を個別に堆積する場合に比べて処理工程数が減少することである。後者は、バインダ及びこのバインダ材料を取り除く個別のベーキング工程を有する堆積を含んでいる。必要な場合、蛍光体粒子に保護コーティングを形成して蛍光体粒子とエポキシとの間での反応を防止することができる。
図2の実施例の蛍光体粒子は、1個のカラー光(広帯域光、狭帯域光、又は例えば赤、緑、青、黄色又は白色のような多数のスペクトルライン)を放出する1種類の蛍光体又は良好なカラー形成を行うための種々のカラー光を放出する蛍光体粒子の混合体のいずれかとすることができる。
可視光はエポキシ内で等方的に放出される。光がエポキシから空気中に放出される際、n=1.5からn=1.0への屈折率の遷移が存在する。n=1.5の材料中で界面の法線に対してθ=0.730ラジアンの角度で放出された可視光だけがn=1.0の空気中に出射することができる。角度が一層大きくなると、全反射が生じる。これは、(1−cos θ)の光部分つまり放出光の25.6%の部分だけを取り出すことができる。
一方、多くの蛍光体は2又はそれ以上の屈折率を有している。より高い透明性を有し蛍光体粒子よりも十分に小さい屈折率を有するエポキシを用いる場合、これは後側で反射した光が蛍光体粒子により(多重)散乱することを意味する。この散乱光の一部分の光は法線に対して0.730ラジアンの角度範囲内に再分布され、空気中に出射することができる。エポキシ及び蛍光体の屈折率を十分に異ならせることにより、可視光の空気中への放出が角度再分布により増大されことになる。エポキシの外側表面を粗にすることを利用してエポキシ−空気界面に対する光の入射角を変化させ全光放出を増大することができる。
図2は、エッジの紫外/青色光を効率良く利用すると共に発生した可視光が効率良く集められる実施例を示す。カップの内側の紫外/可視光ミラーにより、紫外光及び可視光の両方を効率良く用いることについて大幅に寄与させることができる。
単一のLEDを用いる図2に示す紫外/青色LED−蛍光体は単独で用いることができ或いはこの装置の別のものと一緒に用いることができる。例えば、これらの装置は1次元又は2次元アレイとして配置することができ、内部ミラーを有しエポキシ及び蛍光体が充填されているカップ内に各個別のLEDを配置することができる。さらに、例えばある方向(x方向)よりも一方向例えばy方向(紙面と直交する方向)に一層長いLED積層体を構成することもできる。この場合、カップは伸長したLEDを収納するのに十分な長さのチャネルを構成する。このような伸長状の装置は単独で用いることができ、或いは米国特許第4822144号のブリエンにより記述されているLED表示装置の紫外/青色バックライトとしてスラブ(slab)との組合せのようなアレイとして用いることができる。
例えば2又はそれ以上の長さ対幅の比を有する伸長状LEDは、ほぼ1の比を有する同一面積のLEDよりも一層高い発光効率及び熱伝導率を有することが期待されている。
実施例2
実施例2は実施例1と同様であるが、カップが蛍光体−エポキシ混合体で満たされているLED−カップの組合せが図1に示すとほぼ同様に、より大きな寸法で上側がドーム状の透明エポキシで封止されている点において相違する。このような構成とすることにより、可視光が発生する領域よりも遠く離れて位置するエポキシ−空気界面が形成され、エポキシ−空気界面の法線に対する入射角が一層小さくなる。この入射角が小さくなることにより、この界面を通過する光の透過性が増大され放出光の角度分布も一層狭くなる。
封止用に用いるエポキシは蛍光体材料を含まずカップを充填するために用いるエポキシと同一の種類のものである必要はない。紫外保護用に用いる小さなガラスプレートを2個のエポキシ間に配置することができる。
実施例2を用いることができ、この実施例2は単一のLEDの用途又は複数のLEDを1次元又は2次元アレイとして用いる場合に好ましく用いることができ、この用途により個別のLED間に比較的大きな間隔を利用することができる。個別のLED間により大きな間隔を用いることは、熱の課題を解消する利点がある。
実施例3
図3は本発明の第3の実施例を示す。図3は、長波長通過フィルタ27がLED積層体21の前側(見る側)に付加され位置決めされている点を除き図2のものと同一である。このLWPフィルタは、例えばガラスプレート上に蒸着又はスパッタリングすることにより形成することができ、このガラスプレートは前述したように付加的なUV保護のために用いられる。好適なLWPフィルタは、高屈折率層と低屈折率層とを交互に形成した多層誘電体積層体である。このLWPフィルタの機能は、(1)紫外/青色光を蛍光体に向けて反射すること、及び(2)蛍光体から放出された可視光を透過することである。これにより、蛍光体により紫外/青色光の良好な吸収が達成されると共に蛍光体粒子密度を低くすることも可能になる。これにより可視光の透過性も増大される。さらに、紫外/青色光を反射させることにより封止用に用いられるエポキシに対して保護が図られると共に見る者に対しても保護が達成される。これによる全体として結果は、紫外光及び可視光の両方を効率良く利用できること及び一層良好なUV保護が行われることである。
実施例4
実施例4は実施例3に類似しているが、LED−カップの組合せはそのカップが蛍光体−エポキシ混合体で満たされると共に上側のガラスプレート上にLWPフィルタが設けられており、このLED−カップの組合せは図1に示すとほぼ同様に、より大きな寸法で上側がドーム状の透明エポキシで封止されている点において相違する。このような構成とすることにより、可視光が発生する領域よりも遠く離れて位置するエポキシ−空気界面が形成され、空気界面の法線に対する可視光の入射角が一層小さくなる。
この入射角が小さくなることにより、この界面を通過する光の透過性が増大され放出光の角度分布も一層狭くなる。
実施例5
実施例5は、LED積層体21の前側(見る側)に長波長フィルタの代わりに短波長フィルタ(SWP)27が付加されている点を除き実施例3と同一である。このSWPフィルタは、例えば前述したガラスプレート上側に蒸着又はスパッタリングすることにより形成できる。この場合、ガラスプレート26は、上述したように、UV保護のために用いられる。
このSWPフィルタは、好ましくは12個の層の高屈折率層と低屈折率層とを交互に形成した多層誘電体積層体であり、これらの層の大部分は所謂1/4波長型とする。特にTV管のような種々のデバイスに関して、このSWPフィルタはブリエンズ等による米国特許第4634926号、第4647812号及び4882617号に記載されている。これらのフィルタは、蛍光体について一般的なように、広帯域の光又は多重ライン光を放出する例えば赤、緑又は青のような1色の蛍光体が設けられている紫外/青色LED−蛍光体装置について用いることができる。このSWPフィルタの機能は、(1)非常に長い波長の光を反射すること、及び(2)所望の波長の光の一部を反射することである。フィルタが無い場合、この後者の光は法線に対して小さな角度及び大きな角度で(所謂ランベルシャン分布すなわちコサイン分布で)空気中に出射する。フィルタが存在する場合、大きな角度の光はフィルタにより反射し、その後多重散乱し、角度的に再分布し、蛍光体粒子によりフィルタに向けて反射する。そして、この光の大部分は表面の法線に対して小さな角度で空気中に出射する。この全体としての結果は、前側方向の光強度において最大ゲイン2の一層狭い角度分布が得られ、さらに一層飽和した(すなわち、一層純粋な)カラーが得られることである。例えば比較的小さな集光角の光学系のように一層方向性の高い光ビームが必要となる用途において、これは利点となる。一層飽和したカラーとなることにより、可視性も増大される。交通光のような用途の場合、これら両方の利点が重要である。投射TVのような別の用途の場合、蛍光体層と関連する短波長通過干渉フィルタの機能は、フィリップス テクニカル レビュー Vol44,No7,1989においてVriens等により詳細に説明されている。
実施例6
LED−カップ組合せ体が、図1に示すと同様により大きな寸法で上側がドーム状に透明エポキシで封止されている点を除き実施例5と同一である。
実施例7
実施例7は実施例3及び5の利点を結合した好適実施例である。この実施例は、LED積層体21の前側(見る側)に前述したLWP及びSWPフィルタの代わりにバンドパス(BP)干渉フィルタを用いることにより実現される。このBPフィルタの短波長側はLWPフィルタの特性、すなわち紫外/青色光を反射し可視光を透過する特性を有する。このフィルタの長波長側はSWPフィルタの特性、すなわち非常に長い波長の可視光を全ての角度で反射しより短い波長の可視光を大きな角度で反射する。
このバンドパスフィルタも高屈折率層と低屈折率層とが交互に形成された多層誘電体積層体とし、その層の数は好ましくは少なくとも12層とし、その厚さ分布はSWPフィルタの厚さ分布よりも僅かに相違するように形成する。
実施例8
実施例8は、LED−カップ組合せ体が、図1に示すと同様に大きな寸法で上側がドーム状に透明エポキシで封止されている点を除き実施例5と同一である。
実施例9
図4は本発明による別の実施例40を示す。図4は、紫外/青色光を透過し可視光を反射するフィルタ47がLED積層体21の上側に直接付加されている点を除き図2と同一である。このフィルタは別の位置に配置され実施例5で説明したSWPフィルタとは異なる機能を有しているが、短波長通過(SWP)フィルタとする。LED積層体の上側に直接設けたSWPフィルタを用いることは、蛍光体粒子からLEDの方向に向けて放出された可視光がこのフィルタにより見る側に反射される利点がある。従って、この可視光はLED積層体を2回通過せず、2回通過することは損失が増大することになる。
この場合、構造が若干複雑化するが、全体としての強度は増大する。
実施例10〜12
これらの実施例は、実施例9の構成と上側の紫外/青色光吸収ガラスプレートとの組合せであり、ガラスプレートにはフィルタが設けられ、このフィルタはLWPフィルタ、SWPフィルタ又はBPフィルタのいずれかとすることができる。
実施例13〜15
これらの実施例は、実施例10〜12に、より大きな寸法で上側がドーム形状のエポキシで封止した構成を設けた実施例である。
実施例16
上述した本発明の好適実施例は、紫外/青色光の波長が短過ぎない場合、例えば390nm以上の場合に、特に好適である。360〜390nmの範囲の短い波長の光を用いる場合、特に360nm付近の波長の光を用いる場合、紫外線に耐久性を有するエポキシ樹脂を見つけるのが困難である。この場合、図5に示す好適実施例に図示するように、蛍光体粒子54をLED積層体21にできるだけ接近するように堆積することが有益である。この場合、カップ形状のヘッダ22は紫外/青色光にできるだけ耐久性を有するエポキシ25で満たすことができる。
本発明は、限定した数の実施例及びその変形例の点から説明した。当業者にとって添付した請求の範囲の範囲内において別の実施例及びその変形例が明らかである。
【図面の簡単な説明】
図1AはLEDの詳細な図である。
図1Bは可視光LEDを用いる従来の可視光放出装置の線図である。
図2は本発明の紫外/青色LED−蛍光体装置の第1実施例の一部の線図である。
図3〜図5は本発明の別の実施例を図示する図2と同様な線図である。
Claims (7)
- 開口を有する凹部が形成されている上側表面を有する支持体と、前記凹部の表面に形成した紫外/青色光及び可視光を反射する層と、この光反射層の中央に位置し、第1の屈折率を有する活性層を具える紫外/青色光放出ダイオード(紫外/青色LED)と、このLEDの側部及び上側部を包囲する可視光放出蛍光体の粒子と、前記凹部に充填されると共に前記LEDを包囲し、前記第1の屈折率よりも小さい第2の屈折率を有する紫外/青色光及び可視光透過材料とを具える可視光放出装置において、
紫外/青色光を吸収するプレートが前記凹部の開口を閉塞し、
長波長通過(LWP)フィルタまたはバンドパス(BP)フィルタが、前記プレートの下側表面に配置されており、
長波長通過(LWP)フィルタが、前記LEDからの紫外/青色光を反射し、前記蛍光体により放出された可視光を透過し、
バンドパス(BP)フィルタが、短波長側では、前記LEDからの紫外/青色光を反射し前記蛍光体により放出された可視光を透過し、長波長側では、長波長側の可視光と大きな角度でより短い波長の可視光とを反射することを特徴とする可視光放出装置。 - 短波長通過(SWP)フィルタを、前記LEDの上側表面に配置し、短波長通過(SWP)フィルタが、前記蛍光体により放出された可視光を反射し、前記LEDからの紫外/青色光を透過することを特徴とする請求項1に記載の可視光放出装置。
- 前記フィルタは、高屈折率層と低屈折率層とを交互に形成した多層誘電体積層体であることを特徴とする請求項1又は2に記載の可視光放出装置。
- 前記蛍光体粒子が、前記紫外光及び可視光透過材料中に分散されていることを特徴とする請求項1に記載の可視光放出装置。
- 前記蛍光体粒子が、前記LEDの側部及び/又は上側部に付着していることを特徴とする請求項1に記載の可視光放出装置。
- 開口を有する凹部が形成されている上側表面を有する支持体と、前記凹部の表面に形成した紫外/青色光及び可視光を反射する層と、この光反射層の中央に位置し、第1の屈折率を有する活性層を具える紫外/青色光放出ダイオード(紫外/青色LED)と、このLEDの側部及び上側部を包囲する可視光放出蛍光体の粒子と、前記凹部に充填されると共に前記LEDを包囲し、前記第1の屈折率よりも小さい第2の屈折率を有する紫外/青色光及び可視光透過材料とを具える可視光放出装置において、
短波長通過(SWP)フィルタを前記LEDの上側表面に配置し、
紫外/青色光を吸収するプレートが前記凹部の開口を閉塞し、
短波長通過(SWP)フィルタが、前記蛍光体により放出された可視光を反射し、前記LEDからの紫外/青色光を透過することを特徴とする可視光放出装置。 - 光源と、光電光変調器とを具え、前記光源が請求項1または6に記載の可視光放出装置のアレイを具える表示装置。
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1997
- 1997-05-27 US US08/863,987 patent/US5813753A/en not_active Expired - Fee Related
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1998
- 1998-05-14 EP EP98917519A patent/EP0922305B1/en not_active Expired - Lifetime
- 1998-05-14 DE DE69838207T patent/DE69838207T2/de not_active Expired - Fee Related
- 1998-05-14 JP JP54209498A patent/JP4173556B2/ja not_active Expired - Fee Related
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KR101457725B1 (ko) * | 2007-02-02 | 2014-11-03 | 오스람 옵토 세미컨덕터스 게엠베하 | 혼합광 생성 장치 및 방법 |
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Publication number | Publication date |
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WO1998054929A2 (en) | 1998-12-03 |
US5813753A (en) | 1998-09-29 |
WO1998054929A3 (en) | 2000-08-24 |
DE69838207T2 (de) | 2008-05-08 |
DE69838207D1 (de) | 2007-09-20 |
JP2001501380A (ja) | 2001-01-30 |
EP0922305A2 (en) | 1999-06-16 |
EP0922305B1 (en) | 2007-08-08 |
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