CN102339935B - 覆晶式led封装结构 - Google Patents

覆晶式led封装结构 Download PDF

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CN102339935B
CN102339935B CN201010227947.8A CN201010227947A CN102339935B CN 102339935 B CN102339935 B CN 102339935B CN 201010227947 A CN201010227947 A CN 201010227947A CN 102339935 B CN102339935 B CN 102339935B
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type led
encapsulation structure
substrate
powder layer
electrodes
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CN102339935A (zh
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沈佳辉
洪梓健
曾坚信
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Su Normal University Semiconductor Materials and Equipment Research Institute Pizhou Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明提供一种覆晶式LED封装结构，其包括一个基板、一个封装壳体、两个电极以及一个LED芯片。所述基板为透明的平板体，包含有一个承载面以及相对所述承载面的一个荧光粉层。所述承载面设置所述封装壳体以及两个电极。所述LED芯片设置于所述两个电极之间并达成电性连接。所述LED芯片的底部具有反射层设置，使光线向所述基板方向投射并穿过所述荧光粉层，所述荧光粉层具有分层涂布，每一涂布具有一特定颜色波长的荧光粉，不同涂布有不同颜色波长的荧光粉。本发明能藉由所述透明基板分层涂布的荧光粉层设置提升发光效率与使用寿命。

Description

覆晶式LED封装结构
技术领域
本发明涉及一种覆晶式LED封装结构，尤其涉及一种具有较佳荧光粉激发效果的覆晶式LED封装结构。
背景技术
LED产业是近几年最受瞩目的产业之一，发展至今，LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点，然而通常LED高功率产品为获得所需要的亮度与颜色，必须采用不同颜色的荧光粉来作混合搭配。一般而言，是将这些不同颜色的荧光粉混入LED的封装胶内后由LED光线激发。但由于LED的封装胶固结后，内部不同颜色的荧光粉颗粒混杂在一块，其不同颜色的荧光粉因为不同的波长混杂将会交互干扰影响，使荧光粉的激发效果降低，而且封装胶容易因长期过热而变黄变质，造成使用寿命降低。
发明内容
有鉴于此，有必要提供一种增加荧光粉激发效果的覆晶式LED封装结构。
一种覆晶式LED封装结构，其包括一个基板、一个封装壳体、两个电极以及一个LED芯片。所述基板为透明的平板体，包含有一个承载面以及相对所述承载面的一个荧光粉层。所述承载面设置所述封装壳体以及两个电极。所述LED芯片设置于所述两个电极之间并达成电性连接。所述LED芯片的底部具有反射层设置，使光线向所述基板方向投射并穿过所述荧光粉层,所述荧光粉层具有分层涂布,每一涂布具有一特定颜色波长的荧光粉,不同涂布有不同颜色波长的荧光粉,所述基板承载面上的所述LED芯片与所述封装壳体的高度为一致,所述反射层材料采用金、钛、铬、银、铝其中之一或其合金，所述反射层与外界空气直接接触。
本发明覆晶式LED封装结构，由于在透明的基板平板体上设置依序分层涂布的荧光粉层，使LED芯片发光所激发的荧光粉层不会相互干扰，能防止混合荧光粉所造成的发光效率降低与寿命缩减的缺点。
附图说明
图1是本发明覆晶式LED封装结构的剖视图。
图2是本发明覆晶式LED封装结构另一实施方式的剖视图。
主要元件符号说明
覆晶式LED封装结构             10、20
基板                          11、21
承载面                        112、214
封装壳体                      12、22
容置腔                        12a
电极                          13、23
LED芯片                       14、24
反射层                        140
荧光粉层                      16、26
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1，所示为本发明覆晶式LED封装结构的剖视图，所述覆晶式LED封装结构10包括一个基板11、一个封装壳体12、两个电极13以及一个LED芯片14。
所述基板11为透明的平板体用以使光线穿过。所述基板11包含有一个承载面112以及相对所述承载面112的一个荧光粉层16。所述承载面112用以设置所述封装壳体12以及两个电极13。所述基板11采用高透光率材料制作，例如二氧化硅(SiO2)、氮化硅(Si3N4)、类钻石材料(Diamond-like material)、钻石(Diamond)、蓝宝石(Sapphire)、多分子材料(Polymer materials)、石英(Quartz)等。
所述封装壳体12设置在所述基板11承载面112的外围。所述封装壳体12内部形成一个容置腔12a，所述基板11位于所述容置腔12a的一端，从而与所述封装壳体12共同构成一个底端封闭的空腔。所述封装壳体12采用导热性较佳的材料有助于散热，例如氮化铝(AlN)、硅(Si)、氮化硼(BN)、石墨(C)等。所述封装壳体12的顶面以及该封装壳体12的容置腔12a的内侧对称的设置有两个电极13，且该两个电极13从所述基板11的承载面112的两端以相对方向沿着所述容置腔12a内侧壁至所述容置腔12a的另一端，用以与外部电性连接。所述两个电极13可采用铝(Al)、金(Au)、银(Ag)、铜(Cu)、镍(Ni)、氧化铟锡(ITO)等金属或金属氧化物导电材料。
所述LED芯片14设置在所述基板11承载面112上，并位于所述容置腔12a内，同时与所述两个电极13分别电性连接。所述LED芯片14的两极接点电性连接在所述基板11承载面112上的两个电极13，所述LED芯片14的底部具有反射层140设置，使光线反射向着所述基板11的方向投射并穿过所述荧光粉层16。所述反射层140可以贴合、电镀、蒸镀等方式形成。所述反射层140材料可以采用金(Au)、钛(Ti)、铬(Cr)、银(Ag)或铝(Al)等金属或其合金材料。所述基板11上的荧光粉层16，藉由所述基板11的平板体以薄膜贴合或是旋涂(coating)方式附着于所述基板11表面上。所述荧光粉层16依荧光粉颜色波长的不同分层涂布。每一涂布具有一特定颜色波长的荧光粉,不同涂布有不同颜色波长的荧光粉。所述荧光粉层16依荧光粉颜色波长的顺序涂布构成。所述荧光粉层16依荧光粉颜色波长由长波长至短波长顺序分层涂布。本实施方式中采用红、绿、蓝长波长至短波长顺序分层涂布于所述基板11表面上。所述荧光粉层16依波长的不同、依顺序分层涂布，使不同波长荧光粉之间减少波长能量的互相干扰，从而可增加荧光粉激发的效能。
请参阅图2，所示为本发明覆晶式LED封装结构另一实施方式的剖视图。所述覆晶式LED封装结构20包括一个基板21、一个封装壳体22、两个电极23以及一个LED芯片24。所述覆晶式LED封装结构20与上述覆晶式LED封装结构10基本上相同，所述基板21承载面214的相对表面上也具有分层设置的荧光粉层26，差异在于所述LED芯片24与所述封装壳体22的组合。本实施方式中，所述封装壳体22是配合所述LED芯片24的高度设置，使所述LED芯片24与所述封装壳体22的高度为一致，从而导致所述LED芯片24设置在所述基板21承载面214上封装构成所述覆晶式LED封装结构20的高度缩小至最小范围。所述LED芯片24底部的反射层140设置使光线集中反射。所述荧光粉层26分层的设置防止的激发效果降低，使所述覆晶式LED封装结构发挥最大的效益。
综上，本发明覆晶式LED封装结构的荧光粉层可防止不同颜色的荧光粉因为不同的波长混杂交互干扰影响，使荧光粉的激发提升，并与所述LED芯片的覆晶式结构配合，能有效改善目前LED封装结构使用上发光效率的问题。
另外，本领域技术人员还可在本发明精神内做其它变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (9)

1.一种覆晶式LED封装结构，其包括一个基板、一个封装壳体、两个电极以及一个LED芯片,所述基板为透明的平板体，包含有一个承载面以及相对所述承载面的一个荧光粉层,所述承载面设置所述封装壳体以及两个电极,所述LED芯片设置于所述两个电极之间并达成电性连接,所述LED芯片的底部具有反射层设置，使光线向所述基板方向投射并穿过所述荧光粉层,所述荧光粉层具有分层涂布,每一涂布具有一特定颜色波长的荧光粉,不同涂布有不同颜色波长的荧光粉,所述基板承载面上的所述LED芯片与所述封装壳体的高度为一致,所述反射层材料采用金、钛、铬、银、铝其中之一或其合金，所述反射层与外界空气直接接触。
2.如权利要求1所述的覆晶式LED封装结构，其特征在于：所述基板材料采用二氧化硅(SiO2)、氮化硅(Si3N4)、类钻石材料(Diamond-like material)、钻石(Diamond)、蓝宝石(Sapphire)、多分子材料(Polymer materials)、石英(Quartz)其中之一。
3.如权利要求1所述的覆晶式LED封装结构，其特征在于：所述封装壳体设置在所述基板外围，所述封装壳体内部形成一个容置腔，所述基板位于所述容置腔的一端，从而与所述封装壳体共同构成一个底端封闭的空腔。
4.如权利要求3所述的覆晶式LED封装结构，其特征在于：所述封装壳体的材料为氮化铝(AlN)、硅(Si)、氮化硼(BN)、石墨(C)散热结构的材料。
5.如权利要求3所述的覆晶式LED封装结构，其特征在于：所述两个电极从所述基板的承载面之两端以相对方向沿着所述容置腔内侧壁至所述容置腔之另一端。
6.如权利要求5所述的覆晶式LED封装结构，其特征在于：所述两个电极的材料至少包含铝(Al)、金(Au)、银(Ag)、铜(Cu)、镍(Ni)其中之一或金属氧化物导电材料。
7.如权利要求1所述的覆晶式LED封装结构，其特征在于：所述荧光粉层藉由所述基板的平板体以薄膜贴合或是旋涂方式附着于所述基板表面上。
8.如权利要求1所述的覆晶式LED封装结构，其特征在于：所述荧光粉层依荧光粉颜色波长由长波长至短波长顺序分层涂布。
9.如权利要求8所述的覆晶式LED封装结构，其特征在于：所述荧光粉层采用红、绿、蓝长波长至短波长顺序分层涂布于所述基板表面上。
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