JP2014078695A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2014078695A JP2014078695A JP2013183879A JP2013183879A JP2014078695A JP 2014078695 A JP2014078695 A JP 2014078695A JP 2013183879 A JP2013183879 A JP 2013183879A JP 2013183879 A JP2013183879 A JP 2013183879A JP 2014078695 A JP2014078695 A JP 2014078695A
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- light emitting
- emitting device
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- 238000004020 luminiscence type Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 150000004760 silicates Chemical class 0.000 claims description 4
- 150000003568 thioethers Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
【解決手段】 本発明の実施形態による発光装置は、少なくとも2以上の電極パターンが形成された基板と、前記電極パターン上にそれぞれ配置され、上部に蛍光部が配置されたLEDチップと、前記基板上に配置されたダムとを含み、前記ダムは、前記LEDチップから離隔されて配置され、前記基板は、第1銅層、第2銅層及び基板本体を含むDCB(Direct Copper Bonding)基板を含む。
【選択図】 図1
Description
さらに、前記発光装置は、基板の金属層として金(Au)を使用することができ、発光の変色を抑制することができる。これにより、前記発光装置は光速低下を抑制することができる。すなわち、前記発光装置は、LEDチップ14上に配置された蛍光部16と前記蛍光部16と離隔配置された反射防止用ガラス19を含むことにより、第1及び第2電極パターン12,13にほとんど光が当たらず、反射率が低い金(Au)を基板の金属層にも使用することができる。
2 第1銅層
3 第2銅層
11 DCB基板
12 第1電極パターン
13 第2電極パターン
14 LEDチップ
15 電極パッド
16 蛍光部
17 ボンディングワイヤー
18 ダム
19 反射防止用ガラス
S エンキャップ(Encap)層
Claims (10)
- 少なくとも2以上の電極パターンが形成された基板と、
前記電極パターン上にそれぞれ配置され、上部に蛍光部が配置されたLEDチップと、
前記基板上に配置されたダムとを含み、
前記ダムは、前記LEDチップから離隔されて配置され、
前記基板は、第1銅層、第2銅層及び基板本体を含むDCB(Direct Copper Bonding)基板である、発光装置。 - 前記電極パターンは、前記第1銅層上に配置される、請求項1に記載の発光装置。
- 前記基板上に配置されたエンキャップ層又は前記基板の上側と前記ダム上に前記LEDチップと離隔されて配置された反射防止部をさらに含む、請求項1又は2に記載の発光装置。
- 前記エンキャップ層は、
蛍光体を含有したシリコン樹脂又はエポキシ樹脂で形成されたグループから少なくとも一つを選択する、請求項3に記載の発光装置。 - 前記LEDチップは、
垂直型LEDチップ、水平型LEDチップ及びフリップ型チップで構成されたグループから少なくとも一つを選択する、請求項1ないし4のいずれか一項に記載の発光装置。 - 前記電極パターンは、上部に配置された金属層をさらに含み、
前記LEDチップは、それぞれ前記金属層に配置される、請求項1ないし5のいずれか一項に記載の発光装置。 - 前記金属層は、
Auを含む、請求項6に記載の発光装置。 - 前記蛍光体は、
シリケート系列、サルファイド系列、YAG系列、TAG系列、Nitride系列で構成されたグループから少なくとも一つを含む、請求項1ないし7のいずれか一項に記載の発光装置。 - 前記ダムの高さは、
前記LEDチップの高さより高い、請求項1ないし8のいずれか一項に記載の発光装置。 - 前記反射防止部は、
反射防止用ガラスを含む、請求項3に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0111596 | 2012-10-09 | ||
KR1020120111596A KR20140047750A (ko) | 2012-10-09 | 2012-10-09 | 발광 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014078695A true JP2014078695A (ja) | 2014-05-01 |
JP2014078695A5 JP2014078695A5 (ja) | 2016-10-13 |
Family
ID=49212592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013183879A Pending JP2014078695A (ja) | 2012-10-09 | 2013-09-05 | 発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9093626B2 (ja) |
EP (1) | EP2720266B1 (ja) |
JP (1) | JP2014078695A (ja) |
KR (1) | KR20140047750A (ja) |
CN (1) | CN103715338A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019114638A (ja) * | 2017-12-22 | 2019-07-11 | スタンレー電気株式会社 | 樹脂パッケージ及び半導体発光装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI548005B (zh) * | 2014-01-24 | 2016-09-01 | 環旭電子股份有限公司 | 選擇性電子封裝模組的製造方法 |
US10978619B2 (en) * | 2016-12-02 | 2021-04-13 | Toyoda Gosei Co., Ltd. | Light emitting device |
JP2018098085A (ja) * | 2016-12-15 | 2018-06-21 | 株式会社ジャパンディスプレイ | 表示装置 |
CN107369741A (zh) * | 2017-07-13 | 2017-11-21 | 东莞市凯昶德电子科技股份有限公司 | 带一体式金属围坝的led支架模组及其制备方法 |
Citations (5)
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JP2005317599A (ja) * | 2004-04-27 | 2005-11-10 | Kyocera Corp | 電子部品搭載用基板および電子装置 |
US20060163587A1 (en) * | 2005-01-21 | 2006-07-27 | Erchak Alexei A | Packaging designs for LEDs |
JP2008300350A (ja) * | 2007-05-02 | 2008-12-11 | Cree Inc | Criの高い暖色系白色光を供給するマルチチップ発光デバイスランプおよびこれを含む照明器具 |
JP2011071407A (ja) * | 2009-09-28 | 2011-04-07 | Sharp Corp | 発光素子および照明装置 |
JP2011113672A (ja) * | 2009-11-24 | 2011-06-09 | Toshiba Lighting & Technology Corp | 発光装置及びこれを備えた照明器具 |
Family Cites Families (12)
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US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
JP2002305261A (ja) * | 2001-01-10 | 2002-10-18 | Canon Inc | 電子部品及びその製造方法 |
CN100565948C (zh) * | 2005-06-30 | 2009-12-02 | 松下电工株式会社 | 发光装置 |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US8735920B2 (en) * | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
TWI367465B (en) * | 2008-02-15 | 2012-07-01 | Foxsemicon Integrated Tech Inc | Led display |
KR20100079688A (ko) * | 2008-12-31 | 2010-07-08 | 서울반도체 주식회사 | Led 패키지 |
CN102074558B (zh) * | 2009-10-21 | 2013-06-19 | 东芝照明技术株式会社 | 发光装置以及照明器具 |
EP2315284A3 (en) * | 2009-10-21 | 2013-03-27 | Toshiba Lighting & Technology Corporation | Light-Emitting apparatus and luminaire |
EP2378576A2 (en) * | 2010-04-15 | 2011-10-19 | Samsung LED Co., Ltd. | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
EP2448028B1 (en) * | 2010-10-29 | 2017-05-31 | Nichia Corporation | Light emitting apparatus and production method thereof |
KR101901890B1 (ko) * | 2012-09-28 | 2018-09-28 | 엘지이노텍 주식회사 | 발광 장치 |
-
2012
- 2012-10-09 KR KR1020120111596A patent/KR20140047750A/ko not_active Application Discontinuation
-
2013
- 2013-08-27 US US14/010,592 patent/US9093626B2/en active Active
- 2013-09-05 JP JP2013183879A patent/JP2014078695A/ja active Pending
- 2013-09-13 EP EP13184243.7A patent/EP2720266B1/en active Active
- 2013-10-09 CN CN201310467515.8A patent/CN103715338A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005317599A (ja) * | 2004-04-27 | 2005-11-10 | Kyocera Corp | 電子部品搭載用基板および電子装置 |
US20060163587A1 (en) * | 2005-01-21 | 2006-07-27 | Erchak Alexei A | Packaging designs for LEDs |
JP2008300350A (ja) * | 2007-05-02 | 2008-12-11 | Cree Inc | Criの高い暖色系白色光を供給するマルチチップ発光デバイスランプおよびこれを含む照明器具 |
JP2011071407A (ja) * | 2009-09-28 | 2011-04-07 | Sharp Corp | 発光素子および照明装置 |
JP2011113672A (ja) * | 2009-11-24 | 2011-06-09 | Toshiba Lighting & Technology Corp | 発光装置及びこれを備えた照明器具 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019114638A (ja) * | 2017-12-22 | 2019-07-11 | スタンレー電気株式会社 | 樹脂パッケージ及び半導体発光装置 |
JP7053249B2 (ja) | 2017-12-22 | 2022-04-12 | スタンレー電気株式会社 | 半導体発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20140097452A1 (en) | 2014-04-10 |
EP2720266A2 (en) | 2014-04-16 |
CN103715338A (zh) | 2014-04-09 |
US9093626B2 (en) | 2015-07-28 |
EP2720266B1 (en) | 2021-10-20 |
EP2720266A3 (en) | 2016-03-16 |
KR20140047750A (ko) | 2014-04-23 |
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