JP4037711B2 - 層間絶縁膜内に形成されたキャパシタを有する半導体装置 - Google Patents

層間絶縁膜内に形成されたキャパシタを有する半導体装置 Download PDF

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Publication number
JP4037711B2
JP4037711B2 JP2002218399A JP2002218399A JP4037711B2 JP 4037711 B2 JP4037711 B2 JP 4037711B2 JP 2002218399 A JP2002218399 A JP 2002218399A JP 2002218399 A JP2002218399 A JP 2002218399A JP 4037711 B2 JP4037711 B2 JP 4037711B2
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JP
Japan
Prior art keywords
interlayer insulating
insulating film
wiring
film
capacitor
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Expired - Fee Related
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JP2002218399A
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English (en)
Japanese (ja)
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JP2004063667A (ja
JP2004063667A5 (enExample
Inventor
健 松永
浩二 宮本
雄一 中島
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002218399A priority Critical patent/JP4037711B2/ja
Priority to US10/626,592 priority patent/US7242094B2/en
Priority to CN03152279.3A priority patent/CN1265458C/zh
Publication of JP2004063667A publication Critical patent/JP2004063667A/ja
Publication of JP2004063667A5 publication Critical patent/JP2004063667A5/ja
Priority to US11/762,432 priority patent/US20070228573A1/en
Application granted granted Critical
Publication of JP4037711B2 publication Critical patent/JP4037711B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002218399A 2002-07-26 2002-07-26 層間絶縁膜内に形成されたキャパシタを有する半導体装置 Expired - Fee Related JP4037711B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002218399A JP4037711B2 (ja) 2002-07-26 2002-07-26 層間絶縁膜内に形成されたキャパシタを有する半導体装置
US10/626,592 US7242094B2 (en) 2002-07-26 2003-07-25 Semiconductor device having capacitor formed in multilayer wiring structure
CN03152279.3A CN1265458C (zh) 2002-07-26 2003-07-28 具有形成在多层布线结构中电容器的半导体器件
US11/762,432 US20070228573A1 (en) 2002-07-26 2007-06-13 Semiconductor device having capacitor formed in multilayer wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002218399A JP4037711B2 (ja) 2002-07-26 2002-07-26 層間絶縁膜内に形成されたキャパシタを有する半導体装置

Publications (3)

Publication Number Publication Date
JP2004063667A JP2004063667A (ja) 2004-02-26
JP2004063667A5 JP2004063667A5 (enExample) 2005-01-27
JP4037711B2 true JP4037711B2 (ja) 2008-01-23

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JP2002218399A Expired - Fee Related JP4037711B2 (ja) 2002-07-26 2002-07-26 層間絶縁膜内に形成されたキャパシタを有する半導体装置

Country Status (3)

Country Link
US (2) US7242094B2 (enExample)
JP (1) JP4037711B2 (enExample)
CN (1) CN1265458C (enExample)

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JP4037711B2 (ja) * 2002-07-26 2008-01-23 株式会社東芝 層間絶縁膜内に形成されたキャパシタを有する半導体装置
KR100549002B1 (ko) * 2004-02-04 2006-02-02 삼성전자주식회사 복층 엠아이엠 커패시터를 갖는 반도체소자 및 그것을제조하는 방법
KR100564626B1 (ko) * 2004-05-28 2006-03-28 삼성전자주식회사 대용량 mim 캐패시터 및 그 제조방법
JP2006128309A (ja) * 2004-10-27 2006-05-18 Shinko Electric Ind Co Ltd キャパシタ装置及びその製造方法
KR100588373B1 (ko) * 2004-12-30 2006-06-12 매그나칩 반도체 유한회사 반도체 소자의 형성 방법
KR100755365B1 (ko) * 2005-02-15 2007-09-04 삼성전자주식회사 엠. 아이. 엠 커패시터들 및 그 형성방법들
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
JP5165868B2 (ja) * 2005-08-10 2013-03-21 三星電子株式会社 誘電膜上のパッシベーション膜と共に金属−絶縁体−金属キャパシタ（ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ−ｍｅｔａｌｍｉｍｃａｐａｃｉｔｏｒｓ）を形成する方法
JP4764160B2 (ja) * 2005-12-21 2011-08-31 株式会社東芝 半導体装置
JP2008270277A (ja) * 2007-04-16 2008-11-06 Nec Electronics Corp 位置ずれ検出パターン、位置ずれ検出方法および半導体装置
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KR100897824B1 (ko) * 2007-08-29 2009-05-18 주식회사 동부하이텍 엠아이엠(ｍｉｍ) 캐패시터와 그의 제조방법
JP2009130207A (ja) * 2007-11-26 2009-06-11 Nec Electronics Corp 半導体装置および半導体装置の製造方法
US7868453B2 (en) * 2008-02-15 2011-01-11 International Business Machines Corporation Solder interconnect pads with current spreading layers
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US8431463B2 (en) * 2008-08-08 2013-04-30 Texas Instruments Incorporated Capacitor contact formed concurrently with bond pad metallization
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US9577025B2 (en) * 2014-01-31 2017-02-21 Qualcomm Incorporated Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
US10164003B2 (en) * 2016-01-14 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. MIM capacitor and method of forming the same
US9704796B1 (en) * 2016-02-11 2017-07-11 Qualcomm Incorporated Integrated device comprising a capacitor that includes multiple pins and at least one pin that traverses a plate of the capacitor
US9871095B2 (en) * 2016-03-17 2018-01-16 Taiwan Semiconductor Manufacturing Company Ltd. Stacked capacitor with enhanced capacitance and method of manufacturing the same
US10446487B2 (en) * 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
WO2018169968A1 (en) 2017-03-16 2018-09-20 Invensas Corporation Direct-bonded led arrays and applications
KR102449358B1 (ko) * 2017-08-31 2022-09-30 삼성전기주식회사 커패시터 부품
CN107622995B (zh) * 2017-10-09 2019-12-06 上海先进半导体制造股份有限公司 功率器件、mim电容及其制备方法
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US10804230B2 (en) * 2018-10-17 2020-10-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and method of manufacturing the same
TWI755079B (zh) * 2019-09-30 2022-02-11 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
DE102020132547A1 (de) * 2020-06-04 2021-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Speichervorrichtung, ic-bauteil und verfahren
CN112331659B (zh) * 2020-11-06 2021-10-26 长江存储科技有限责任公司 半导体器件制备方法、半导体器件及三维存储器
CN118448346A (zh) * 2023-02-03 2024-08-06 联华电子股份有限公司 半导体线路图案以及其制作方法

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Also Published As

Publication number Publication date
US20040207043A1 (en) 2004-10-21
US7242094B2 (en) 2007-07-10
JP2004063667A (ja) 2004-02-26
CN1265458C (zh) 2006-07-19
US20070228573A1 (en) 2007-10-04
CN1484310A (zh) 2004-03-24

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