JP3984020B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

Info

Publication number
JP3984020B2
JP3984020B2 JP2001324141A JP2001324141A JP3984020B2 JP 3984020 B2 JP3984020 B2 JP 3984020B2 JP 2001324141 A JP2001324141 A JP 2001324141A JP 2001324141 A JP2001324141 A JP 2001324141A JP 3984020 B2 JP3984020 B2 JP 3984020B2
Authority
JP
Japan
Prior art keywords
gate electrode
floating gate
conductors
insulator
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001324141A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002203919A (ja
JP2002203919A5 (enExample
Inventor
誠一 森
充宏 野口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001324141A priority Critical patent/JP3984020B2/ja
Priority to US09/984,599 priority patent/US6713834B2/en
Priority to KR10-2001-0066992A priority patent/KR100483416B1/ko
Publication of JP2002203919A publication Critical patent/JP2002203919A/ja
Priority to US10/728,818 priority patent/US6806132B2/en
Priority to US10/869,392 priority patent/US7061069B2/en
Priority to US10/868,927 priority patent/US20040229422A1/en
Publication of JP2002203919A5 publication Critical patent/JP2002203919A5/ja
Priority to US11/373,982 priority patent/US7420259B2/en
Application granted granted Critical
Publication of JP3984020B2 publication Critical patent/JP3984020B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6894—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having one gate at least partly in a trench
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001324141A 2000-10-30 2001-10-22 不揮発性半導体記憶装置 Expired - Fee Related JP3984020B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001324141A JP3984020B2 (ja) 2000-10-30 2001-10-22 不揮発性半導体記憶装置
KR10-2001-0066992A KR100483416B1 (ko) 2000-10-30 2001-10-30 반도체 장치 및 그 제조 방법
US09/984,599 US6713834B2 (en) 2000-10-30 2001-10-30 Semiconductor device having two-layered charge storage electrode
US10/728,818 US6806132B2 (en) 2000-10-30 2003-12-08 Semiconductor device having two-layered charge storage electrode
US10/869,392 US7061069B2 (en) 2000-10-30 2004-06-17 Semiconductor device having two-layered charge storage electrode
US10/868,927 US20040229422A1 (en) 2000-10-30 2004-06-17 Semiconductor device having two-layered charge storage electrode
US11/373,982 US7420259B2 (en) 2000-10-30 2006-03-14 Semiconductor device having two-layered charge storage electrode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000331407 2000-10-30
JP2000-331407 2000-10-30
JP2001324141A JP3984020B2 (ja) 2000-10-30 2001-10-22 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002203919A JP2002203919A (ja) 2002-07-19
JP2002203919A5 JP2002203919A5 (enExample) 2004-07-29
JP3984020B2 true JP3984020B2 (ja) 2007-09-26

Family

ID=26603084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001324141A Expired - Fee Related JP3984020B2 (ja) 2000-10-30 2001-10-22 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (5) US6713834B2 (enExample)
JP (1) JP3984020B2 (enExample)
KR (1) KR100483416B1 (enExample)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176114A (ja) * 2000-09-26 2002-06-21 Toshiba Corp 半導体装置及びその製造方法
JP2002217318A (ja) * 2001-01-19 2002-08-02 Sony Corp 不揮発性半導体記憶素子及びその製造方法
US6762092B2 (en) 2001-08-08 2004-07-13 Sandisk Corporation Scalable self-aligned dual floating gate memory cell array and methods of forming the array
US6781189B2 (en) * 2002-01-22 2004-08-24 Micron Technology, Inc. Floating gate transistor with STI
KR101110191B1 (ko) 2002-06-19 2012-02-15 쌘디스크 코포레이션 스케일 낸드용 인접셀들 사이의 크로스 커플링을 실드하기위한 딥 워드라인 트렌치
US6894930B2 (en) * 2002-06-19 2005-05-17 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
US6703272B2 (en) * 2002-06-21 2004-03-09 Micron Technology, Inc. Methods of forming spaced conductive regions, and methods of forming capacitor constructions
JP4412903B2 (ja) * 2002-06-24 2010-02-10 株式会社ルネサステクノロジ 半導体装置
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
KR20040011016A (ko) * 2002-07-26 2004-02-05 동부전자 주식회사 알에프 반도체소자 제조방법
TW544786B (en) * 2002-07-29 2003-08-01 Nanya Technology Corp Floating gate and method therefor
KR100448911B1 (ko) * 2002-09-04 2004-09-16 삼성전자주식회사 더미 패턴을 갖는 비휘발성 기억소자
US6908817B2 (en) * 2002-10-09 2005-06-21 Sandisk Corporation Flash memory array with increased coupling between floating and control gates
KR100537276B1 (ko) * 2002-11-18 2005-12-19 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR20050085361A (ko) * 2002-12-06 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 플로팅 게이트 유형의 반도체 디바이스 및 제조 방법과그러한 반도체 디바이스를 포함하는 비휘발성 메모리
KR100880340B1 (ko) 2002-12-20 2009-01-28 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조 방법
KR100526463B1 (ko) * 2003-05-07 2005-11-08 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
JP3964828B2 (ja) 2003-05-26 2007-08-22 株式会社東芝 半導体装置
US7105406B2 (en) * 2003-06-20 2006-09-12 Sandisk Corporation Self aligned non-volatile memory cell and process for fabrication
JP2005072380A (ja) * 2003-08-26 2005-03-17 Toshiba Corp 不揮発性半導体記憶装置、その製造方法、電子カード及び電子装置
US6943118B2 (en) * 2003-09-18 2005-09-13 Macronix International Co., Ltd. Method of fabricating flash memory
US7221008B2 (en) 2003-10-06 2007-05-22 Sandisk Corporation Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
US7202523B2 (en) * 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
US7183153B2 (en) * 2004-03-12 2007-02-27 Sandisk Corporation Method of manufacturing self aligned non-volatile memory cells
KR100589058B1 (ko) * 2004-03-16 2006-06-12 삼성전자주식회사 불휘발성 메모리 장치 및 이를 형성하기 위한 방법
JP2005277171A (ja) * 2004-03-25 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
JP2005332885A (ja) 2004-05-18 2005-12-02 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US7371638B2 (en) * 2004-05-24 2008-05-13 Samsung Electronics Co., Ltd. Nonvolatile memory cells having high control gate coupling ratios using grooved floating gates and methods of forming same
KR100621628B1 (ko) * 2004-05-31 2006-09-19 삼성전자주식회사 비휘발성 기억 셀 및 그 형성 방법
JP2006012871A (ja) * 2004-06-22 2006-01-12 Nec Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US7388251B2 (en) * 2004-08-11 2008-06-17 Micron Technology, Inc. Non-planar flash memory array with shielded floating gates on silicon mesas
TWI249846B (en) * 2004-08-23 2006-02-21 Winbond Electronics Corp Memory device
US20060043463A1 (en) * 2004-09-01 2006-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Floating gate having enhanced charge retention
US7183161B2 (en) * 2004-09-17 2007-02-27 Freescale Semiconductor, Inc. Programming and erasing structure for a floating gate memory cell and method of making
US7094645B2 (en) * 2004-09-17 2006-08-22 Freescale Semiconductor, Inc. Programming and erasing structure for a floating gate memory cell and method of making
JP2006108310A (ja) * 2004-10-04 2006-04-20 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
US7518179B2 (en) * 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7381615B2 (en) 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US7402886B2 (en) * 2004-11-23 2008-07-22 Sandisk Corporation Memory with self-aligned trenches for narrow gap isolation regions
US7482223B2 (en) * 2004-12-22 2009-01-27 Sandisk Corporation Multi-thickness dielectric for semiconductor memory
US8384148B2 (en) * 2004-12-22 2013-02-26 Micron Technology, Inc. Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling
EP1675181A1 (en) * 2004-12-22 2006-06-28 STMicroelectronics S.r.l. Methode of making a non-volatile MOS semiconductor memory device
US7840895B2 (en) * 2005-03-07 2010-11-23 Computer Associates Think, Inc. System and method for data manipulation
JP4113199B2 (ja) * 2005-04-05 2008-07-09 株式会社東芝 半導体装置
JP4488947B2 (ja) 2005-04-08 2010-06-23 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR100674971B1 (ko) * 2005-04-27 2007-01-26 삼성전자주식회사 Ｕ자형 부유 게이트를 가지는 플래시 메모리 제조방법
US7335939B2 (en) 2005-05-23 2008-02-26 Infineon Technologies Ag Semiconductor memory device and method of production
KR100645067B1 (ko) * 2005-07-04 2006-11-10 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법
KR100824400B1 (ko) * 2005-07-08 2008-04-22 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
DE102005038939B4 (de) * 2005-08-17 2015-01-08 Qimonda Ag Halbleiterspeicherbauelement mit oberseitig selbstjustiert angeordneten Wortleitungen und Verfahren zur Herstellung von Halbleiterspeicherbauelementen
KR101088061B1 (ko) 2005-10-24 2011-11-30 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법
JP2007081189A (ja) * 2005-09-15 2007-03-29 Elpida Memory Inc 半導体記憶装置及びその製造方法
US7541240B2 (en) * 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
JP2007134598A (ja) * 2005-11-11 2007-05-31 Toshiba Corp 半導体装置の製造方法
KR100669346B1 (ko) 2005-11-11 2007-01-16 삼성전자주식회사 플로팅 게이트를 갖는 비휘발성 기억 소자 및 그 형성 방법
JP2007157854A (ja) * 2005-12-01 2007-06-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
EP1818989A3 (en) * 2006-02-10 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device and manufacturing method thereof
EP1835530A3 (en) * 2006-03-17 2009-01-28 Samsung Electronics Co., Ltd. Non-volatile memory device and method of manufacturing the same
KR101488516B1 (ko) * 2006-03-21 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 반도체 기억장치
JP2007288175A (ja) * 2006-03-21 2007-11-01 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1837900A3 (en) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
US8022460B2 (en) * 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP2007294911A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
EP1840947A3 (en) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP5483659B2 (ja) * 2006-03-31 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
JP2007335750A (ja) * 2006-06-16 2007-12-27 Toshiba Corp 半導体記憶装置
US7977190B2 (en) 2006-06-21 2011-07-12 Micron Technology, Inc. Memory devices having reduced interference between floating gates and methods of fabricating such devices
JP5400378B2 (ja) 2006-06-30 2014-01-29 富士通セミコンダクター株式会社 半導体装置と半導体装置の製造方法
EP2054925A2 (en) * 2006-08-16 2009-05-06 SanDisk Corporation Nonvolatile memories with shaped floating gates
US20080074920A1 (en) * 2006-09-21 2008-03-27 Henry Chien Nonvolatile Memory with Reduced Coupling Between Floating Gates
US7615445B2 (en) * 2006-09-21 2009-11-10 Sandisk Corporation Methods of reducing coupling between floating gates in nonvolatile memory
US8652912B2 (en) * 2006-12-08 2014-02-18 Micron Technology, Inc. Methods of fabricating a transistor gate including cobalt silicide
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
JP2008218604A (ja) * 2007-03-02 2008-09-18 Nec Electronics Corp 半導体装置
US7745285B2 (en) 2007-03-30 2010-06-29 Sandisk Corporation Methods of forming and operating NAND memory with side-tunneling
KR100885891B1 (ko) * 2007-04-30 2009-02-26 삼성전자주식회사 비휘발성 메모리 소자 및 이의 제조 방법
JP5282372B2 (ja) * 2007-05-11 2013-09-04 ソニー株式会社 表示装置及び電子機器
KR20090047211A (ko) * 2007-11-07 2009-05-12 삼성전자주식회사 도전 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조방법
KR101402890B1 (ko) * 2007-11-30 2014-06-27 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
JP2009152498A (ja) * 2007-12-21 2009-07-09 Toshiba Corp 不揮発性半導体メモリ
JP2010004020A (ja) * 2008-05-19 2010-01-07 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US7935608B2 (en) * 2008-06-02 2011-05-03 Qimonda Ag Storage cell having a T-shaped gate electrode and method for manufacturing the same
JP5522915B2 (ja) 2008-09-30 2014-06-18 ローム株式会社 半導体記憶装置およびその製造方法
US7973353B2 (en) * 2009-02-09 2011-07-05 United Microelectronics Corp. NAND memory cells
KR101096388B1 (ko) * 2009-12-30 2011-12-20 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 이의 제조 방법
JP2012043856A (ja) * 2010-08-16 2012-03-01 Toshiba Corp 半導体装置およびその製造方法
KR20120121722A (ko) * 2011-04-27 2012-11-06 에스케이하이닉스 주식회사 반도체 소자 및 그 형성 방법
CN104752356B (zh) * 2013-12-25 2018-07-06 北京兆易创新科技股份有限公司 一种或非型闪存的浮栅的制作方法
JP5781190B2 (ja) * 2014-04-07 2015-09-16 ローム株式会社 半導体記憶装置
CN106972022B (zh) * 2016-01-11 2019-10-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法、电子装置
TWI629749B (zh) * 2016-11-24 2018-07-11 旺宏電子股份有限公司 半導體元件及其製造方法與記憶體的製造方法
CN108717931A (zh) * 2018-05-23 2018-10-30 武汉新芯集成电路制造有限公司 一种改善浮栅缺陷的方法及半导体结构
CN110838490A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 一种浮栅存储器的制备方法和浮栅存储器
US10886287B2 (en) * 2019-01-14 2021-01-05 Globalfoundries Inc. Multiple-time programmable (MTP) memory device with a wrap-around control gate
US12009435B2 (en) * 2021-09-13 2024-06-11 International Business Machines Corporation Integrated nanosheet field effect transistors and floating gate memory cells

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335497A (ja) 1997-06-04 1998-12-18 Sony Corp 半導体不揮発性記憶装置およびその製造方法
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JPH11163304A (ja) * 1997-11-28 1999-06-18 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US5963824A (en) * 1997-07-09 1999-10-05 Advanced Micro Devices, Inc. Method of making a semiconductor device with adjustable threshold voltage
JPH1187543A (ja) 1997-09-10 1999-03-30 Toshiba Corp 不揮発性半導体記憶装置
JPH11186419A (ja) * 1997-12-25 1999-07-09 Toshiba Corp 不揮発性半導体記憶装置
JPH11261038A (ja) 1998-03-11 1999-09-24 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP4237344B2 (ja) * 1998-09-29 2009-03-11 株式会社東芝 半導体装置及びその製造方法
TW490860B (en) 1998-12-24 2002-06-11 United Microelectronics Corp Manufacturing of flash memory cell
JP3314748B2 (ja) 1999-02-09 2002-08-12 日本電気株式会社 不揮発性半導体記憶装置の製造方法
TW407381B (en) * 1999-03-01 2000-10-01 United Microelectronics Corp Manufacture of the flash memory cell
US6153494A (en) 1999-05-12 2000-11-28 Taiwan Semiconductor Manufacturing Company Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash
US6391722B1 (en) * 2001-07-13 2002-05-21 Vanguard International Semiconductor Corporation Method of making nonvolatile memory having high capacitive coupling ratio

Also Published As

Publication number Publication date
JP2002203919A (ja) 2002-07-19
US20040232515A1 (en) 2004-11-25
US6806132B2 (en) 2004-10-19
KR100483416B1 (ko) 2005-04-15
US6713834B2 (en) 2004-03-30
US20060163637A1 (en) 2006-07-27
US20040080020A1 (en) 2004-04-29
US20040229422A1 (en) 2004-11-18
KR20020034907A (ko) 2002-05-09
US7420259B2 (en) 2008-09-02
US7061069B2 (en) 2006-06-13
US20020093073A1 (en) 2002-07-18

Similar Documents

Publication Publication Date Title
JP3984020B2 (ja) 不揮発性半導体記憶装置
US7723188B2 (en) Non-volatile memory devices and methods of forming the same
US7005328B2 (en) Non-volatile memory device
US7323375B2 (en) Fin field effect transistor device and method of fabricating the same
JP4131896B2 (ja) 不揮発性半導体記憶装置の製造方法
US20050156233A1 (en) Stacked gate flash memory device and method of fabricating the same
US7061040B2 (en) Memory device
US20040077147A1 (en) Stacked gate flash memory device and method of fabricating the same
JP5718585B2 (ja) 半導体装置及びその製造方法、並びにデータ処理システム
US6784039B2 (en) Method to form self-aligned split gate flash with L-shaped wordline spacers
US20080076243A1 (en) Self-aligned non-volatile memory and method of forming the same
KR20170137637A (ko) 반도체 장치 및 그 제조 방법
JPH1126731A (ja) 不揮発性半導体記憶装置およびその製造方法
JP2009267208A (ja) 半導体装置及びその製造方法
KR100521371B1 (ko) 소노스형 비휘발성 메모리 및 그 제조 방법
JP2006093230A (ja) 不揮発性半導体記憶装置
EP1218941B1 (en) Non-volatile memory having high gate coupling capacitance
JP2001332637A (ja) 半導体記憶装置及びその製造方法
US20050106818A1 (en) [memory device and fabrication method thereof]
JP2009152412A (ja) 半導体装置及びその製造方法
US20050156225A1 (en) Methods of fabricating semiconductor devices with scalable two transistor memory cells
KR100491457B1 (ko) 불휘발성 반도체 기억 장치
JP2008153672A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070326

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070417

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070606

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070626

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070705

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100713

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100713

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110713

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees