JP3941901B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3941901B2
JP3941901B2 JP11905598A JP11905598A JP3941901B2 JP 3941901 B2 JP3941901 B2 JP 3941901B2 JP 11905598 A JP11905598 A JP 11905598A JP 11905598 A JP11905598 A JP 11905598A JP 3941901 B2 JP3941901 B2 JP 3941901B2
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JP
Japan
Prior art keywords
insulating film
transparent conductive
film
conductive film
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11905598A
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English (en)
Japanese (ja)
Other versions
JPH11311805A (ja
JPH11311805A5 (enExample
Inventor
久 大谷
美佐子 仲沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP11905598A priority Critical patent/JP3941901B2/ja
Priority to US09/294,335 priority patent/US6690031B1/en
Publication of JPH11311805A publication Critical patent/JPH11311805A/ja
Publication of JPH11311805A5 publication Critical patent/JPH11311805A5/ja
Application granted granted Critical
Publication of JP3941901B2 publication Critical patent/JP3941901B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP11905598A 1998-04-28 1998-04-28 半導体装置の作製方法 Expired - Fee Related JP3941901B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11905598A JP3941901B2 (ja) 1998-04-28 1998-04-28 半導体装置の作製方法
US09/294,335 US6690031B1 (en) 1998-04-28 1999-04-20 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11905598A JP3941901B2 (ja) 1998-04-28 1998-04-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11311805A JPH11311805A (ja) 1999-11-09
JPH11311805A5 JPH11311805A5 (enExample) 2005-08-11
JP3941901B2 true JP3941901B2 (ja) 2007-07-11

Family

ID=14751800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11905598A Expired - Fee Related JP3941901B2 (ja) 1998-04-28 1998-04-28 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US6690031B1 (enExample)
JP (1) JP3941901B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10068926B2 (en) 2011-05-05 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP4372943B2 (ja) * 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6475836B1 (en) * 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP3796070B2 (ja) * 1999-07-21 2006-07-12 シャープ株式会社 液晶表示装置
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4099324B2 (ja) 2000-11-27 2008-06-11 シャープ株式会社 液晶表示装置
JP4798907B2 (ja) * 2001-09-26 2011-10-19 株式会社半導体エネルギー研究所 半導体装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
TW583464B (en) * 2002-11-12 2004-04-11 Hannstar Display Corp Liquid crystal display
TWI226712B (en) * 2003-12-05 2005-01-11 Au Optronics Corp Pixel structure and fabricating method thereof
JP2006126255A (ja) * 2004-10-26 2006-05-18 Mitsubishi Electric Corp 電気光学装置、液晶表示装置及びそれらの製造方法
KR101112549B1 (ko) * 2005-01-31 2012-06-12 삼성전자주식회사 박막 트랜지스터 표시판
TWI411095B (zh) 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
TWI337754B (en) * 2007-04-20 2011-02-21 Au Optronics Corp Semiconductor structure of display device and method for fabricating the same
JP5195455B2 (ja) * 2009-01-23 2013-05-08 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
TWI403413B (zh) * 2009-04-27 2013-08-01 Univ Tatung 親疏水性可轉換複合膜及其製備方法
US8866982B2 (en) * 2009-08-20 2014-10-21 Innolux Corporation Display device
EP2560044A1 (en) * 2010-04-16 2013-02-20 Sharp Kabushiki Kaisha Method for manufacturing electronic substrate, method for manufacturing liquid crystal display device, electronic substrate, and liquid crystal display device
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
GB2489939A (en) * 2011-04-11 2012-10-17 Plastic Logic Ltd Control of capacitive coupling in pixel circuitry
JP5153921B2 (ja) * 2011-06-27 2013-02-27 株式会社半導体エネルギー研究所 表示装置、及び携帯情報端末
JP2013200574A (ja) * 2013-06-05 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置
JP5685633B2 (ja) * 2013-10-08 2015-03-18 株式会社半導体エネルギー研究所 表示装置
CN106502011A (zh) * 2016-12-30 2017-03-15 深圳市华星光电技术有限公司 画素结构及工作方法、阵列基板
CN107065357A (zh) * 2017-05-18 2017-08-18 深圳市华星光电技术有限公司 阵列基板及其制造方法、液晶显示面板
US10459300B2 (en) 2017-05-18 2019-10-29 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd Array substrate and a method for fabricating the same, a liquid crystal display panel
CN117460344A (zh) * 2022-07-14 2024-01-26 群创光电股份有限公司 电子装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617381A (en) 1979-07-20 1981-02-19 Matsushita Electric Industrial Co Ltd Image display unit
JPS58159518A (ja) 1982-03-18 1983-09-21 Seiko Epson Corp 液晶表示パネル
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4639087A (en) * 1984-08-08 1987-01-27 Energy Conversion Devices, Inc. Displays having pixels with two portions and capacitors
US4728175A (en) * 1986-10-09 1988-03-01 Ovonic Imaging Systems, Inc. Liquid crystal display having pixels with auxiliary capacitance
JP2602255B2 (ja) 1987-11-27 1997-04-23 株式会社日立製作所 液晶表示装置およびその駆動方法
JP2851305B2 (ja) 1989-06-07 1999-01-27 株式会社日立製作所 液晶表示装置
JP2604867B2 (ja) * 1990-01-11 1997-04-30 松下電器産業株式会社 反射型液晶表示デバイス
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
US5056895A (en) * 1990-05-21 1991-10-15 Greyhawk Systems, Inc. Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields
JP2616160B2 (ja) * 1990-06-25 1997-06-04 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
JPH0486809A (ja) * 1990-07-31 1992-03-19 Sanyo Electric Co Ltd 液晶表示装置
US5317432A (en) * 1991-09-04 1994-05-31 Sony Corporation Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel
JP2924506B2 (ja) 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP2950061B2 (ja) 1992-11-13 1999-09-20 日本電気株式会社 液晶表示素子
JPH06258669A (ja) 1993-03-04 1994-09-16 Canon Inc 液晶表示装置
JPH0792491A (ja) 1993-09-21 1995-04-07 Matsushita Electric Ind Co Ltd アクティブマトリクス表示装置用薄膜トランジスタ基板
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
TW353150B (en) 1994-05-13 1999-02-21 Thomson Consumer Electronics Liquid crystal display device
JP3339190B2 (ja) 1994-07-27 2002-10-28 ソニー株式会社 液晶表示装置
JP3081474B2 (ja) * 1994-11-11 2000-08-28 三洋電機株式会社 液晶表示装置
JP2864464B2 (ja) * 1994-12-22 1999-03-03 日本ビクター株式会社 反射型アクティブ・マトリクス・ディスプレイ・パネル及びその製造方法
JP3225772B2 (ja) * 1995-01-30 2001-11-05 株式会社日立製作所 液晶表示装置の製造方法
JPH08306926A (ja) 1995-05-07 1996-11-22 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
KR0169386B1 (ko) * 1995-05-31 1999-03-20 김광호 액정 표시 장치 및 이에 사용되는 박막 트랜지스터 기판
JP3413000B2 (ja) * 1996-01-25 2003-06-03 株式会社東芝 アクティブマトリックス液晶パネル
KR100192447B1 (ko) * 1996-05-15 1999-06-15 구자홍 액정표시장치의 제조방법
JP3219685B2 (ja) 1996-06-04 2001-10-15 キヤノン株式会社 液晶表示装置およびその製造方法
KR100226494B1 (ko) * 1997-02-20 1999-10-15 김영환 액정표시장치 및 그 제조방법
US6313481B1 (en) * 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10068926B2 (en) 2011-05-05 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10283530B2 (en) 2011-05-05 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JPH11311805A (ja) 1999-11-09
US6690031B1 (en) 2004-02-10

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