JP3062730B2 - 不揮発性半導体記憶装置および書込み方法 - Google Patents

不揮発性半導体記憶装置および書込み方法

Info

Publication number
JP3062730B2
JP3062730B2 JP18085996A JP18085996A JP3062730B2 JP 3062730 B2 JP3062730 B2 JP 3062730B2 JP 18085996 A JP18085996 A JP 18085996A JP 18085996 A JP18085996 A JP 18085996A JP 3062730 B2 JP3062730 B2 JP 3062730B2
Authority
JP
Japan
Prior art keywords
data
threshold
memory cell
region
threshold value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP18085996A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1027486A (ja
Inventor
敬一 吉田
昌次 久保埜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP18085996A priority Critical patent/JP3062730B2/ja
Priority to TW086108317A priority patent/TW350048B/zh
Priority to TW087112838A priority patent/TW381224B/zh
Priority to KR1019970030562A priority patent/KR980011502A/ko
Priority to US08/890,396 priority patent/US5959882A/en
Publication of JPH1027486A publication Critical patent/JPH1027486A/ja
Priority to JP29056298A priority patent/JP3993323B2/ja
Priority to US09/342,223 priority patent/US6525960B2/en
Application granted granted Critical
Publication of JP3062730B2 publication Critical patent/JP3062730B2/ja
Priority to US09/679,867 priority patent/US6320785B1/en
Priority to US09/984,833 priority patent/US20020054506A1/en
Priority to US10/394,050 priority patent/US6906952B2/en
Priority to US12/794,905 priority patent/USRE44350E1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP18085996A 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法 Expired - Fee Related JP3062730B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP18085996A JP3062730B2 (ja) 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法
TW086108317A TW350048B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory and the writing method
TW087112838A TW381224B (en) 1996-07-10 1997-06-16 Non-volatile semiconductor memory device
KR1019970030562A KR980011502A (ko) 1996-07-10 1997-07-02 불휘발성 반도체 기억장치 및 라이트방법
US08/890,396 US5959882A (en) 1996-07-10 1997-07-09 Nonvolatile semiconductor memory device and data writing method therefor
JP29056298A JP3993323B2 (ja) 1996-07-10 1998-10-13 不揮発性半導体記憶装置
US09/342,223 US6525960B2 (en) 1996-07-10 1999-06-29 Nonvolatile semiconductor memory device including correction of erratic memory cell data
US09/679,867 US6320785B1 (en) 1996-07-10 2000-10-05 Nonvolatile semiconductor memory device and data writing method therefor
US09/984,833 US20020054506A1 (en) 1996-07-10 2001-10-31 Nonvolatile semiconductor memory device and data writing method therefor
US10/394,050 US6906952B2 (en) 1996-07-10 2003-03-24 Nonvolatile semiconductor memory device and data writing method therefor
US12/794,905 USRE44350E1 (en) 1996-07-10 2010-06-07 Nonvolatile semiconductor memory including multi-threshold voltage memory cells including voltage ranges indicating either an erase state or a two or more program state

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18085996A JP3062730B2 (ja) 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29056298A Division JP3993323B2 (ja) 1996-07-10 1998-10-13 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH1027486A JPH1027486A (ja) 1998-01-27
JP3062730B2 true JP3062730B2 (ja) 2000-07-12

Family

ID=16090611

Family Applications (2)

Application Number Title Priority Date Filing Date
JP18085996A Expired - Fee Related JP3062730B2 (ja) 1996-07-10 1996-07-10 不揮発性半導体記憶装置および書込み方法
JP29056298A Expired - Lifetime JP3993323B2 (ja) 1996-07-10 1998-10-13 不揮発性半導体記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP29056298A Expired - Lifetime JP3993323B2 (ja) 1996-07-10 1998-10-13 不揮発性半導体記憶装置

Country Status (4)

Country Link
US (2) US5959882A (enExample)
JP (2) JP3062730B2 (enExample)
KR (1) KR980011502A (enExample)
TW (2) TW350048B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195299A (ja) * 1996-07-10 1999-07-21 Hitachi Ltd 不揮発性半導体記憶装置

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US5978270A (en) * 1995-08-31 1999-11-02 Hitachi, Ltd. Semiconductor non-volatile memory device and computer system using the same
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JP2000021185A (ja) 1998-06-30 2000-01-21 Sharp Corp 不揮発性半導体メモリの書込み方法
JP4023953B2 (ja) 1999-06-22 2007-12-19 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
USRE40110E1 (en) 1999-09-20 2008-02-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device for storing multivalued data
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JP3922516B2 (ja) 2000-09-28 2007-05-30 株式会社ルネサステクノロジ 不揮発性メモリと不揮発性メモリの書き込み方法
JP4082482B2 (ja) 2000-12-11 2008-04-30 株式会社ルネサステクノロジ 記憶システムおよびデータ処理システム
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JP4637512B2 (ja) 2003-11-13 2011-02-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置
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JP4750655B2 (ja) 2006-09-12 2011-08-17 Ｏｋｉセミコンダクタ株式会社 半導体不揮発性メモリ、データ書き込み方法、半導体不揮発性メモリの製造方法、及びデータ書き込みプログラム
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US7489543B1 (en) * 2007-07-25 2009-02-10 Micron Technology, Inc. Programming multilevel cell memory arrays
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195299A (ja) * 1996-07-10 1999-07-21 Hitachi Ltd 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW350048B (en) 1999-01-11
JPH1027486A (ja) 1998-01-27
US6525960B2 (en) 2003-02-25
JP3993323B2 (ja) 2007-10-17
TW381224B (en) 2000-02-01
JPH11195299A (ja) 1999-07-21
US20020181279A1 (en) 2002-12-05
US5959882A (en) 1999-09-28
KR980011502A (ko) 1998-04-30

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