|
US4116714A
(en)
|
1977-08-15 |
1978-09-26 |
International Business Machines Corporation |
Post-polishing semiconductor surface cleaning process
|
|
JPH06349808A
(ja)
|
1993-06-14 |
1994-12-22 |
Hitachi Ltd |
窒化シリコン膜除去液およびそれを用いた半導体製造装置
|
|
JP3243975B2
(ja)
*
|
1994-08-17 |
2002-01-07 |
住友金属工業株式会社 |
半導体装置の製造方法
|
|
JPH09129588A
(ja)
*
|
1995-10-31 |
1997-05-16 |
Fujitsu Ltd |
エッチング液の濃度管理方法及びエッチング装置
|
|
JPH09275091A
(ja)
*
|
1996-04-03 |
1997-10-21 |
Mitsubishi Electric Corp |
半導体窒化膜エッチング装置
|
|
KR100248113B1
(ko)
*
|
1997-01-21 |
2000-03-15 |
이기원 |
전자 표시 장치 및 기판용 세정 및 식각 조성물
|
|
US5885903A
(en)
|
1997-01-22 |
1999-03-23 |
Micron Technology, Inc. |
Process for selectively etching silicon nitride in the presence of silicon oxide
|
|
US6162370A
(en)
|
1998-08-28 |
2000-12-19 |
Ashland Inc. |
Composition and method for selectively etching a silicon nitride film
|
|
SG79292A1
(en)
*
|
1998-12-11 |
2001-03-20 |
Hitachi Ltd |
Semiconductor integrated circuit and its manufacturing method
|
|
US6399517B2
(en)
*
|
1999-03-30 |
2002-06-04 |
Tokyo Electron Limited |
Etching method and etching apparatus
|
|
KR100490963B1
(ko)
*
|
1999-07-13 |
2005-05-24 |
카오카부시키가이샤 |
연마액 조성물
|
|
US6391213B1
(en)
*
|
1999-09-07 |
2002-05-21 |
Komag, Inc. |
Texturing of a landing zone on glass-based substrates by a chemical etching process
|
|
US7749818B2
(en)
|
2002-01-28 |
2010-07-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
|
|
JP2004006810A
(ja)
*
|
2002-04-16 |
2004-01-08 |
Tosoh Corp |
銅系金属研磨液用酸、それを用いた銅系金属用研磨液及び研磨方法
|
|
ATE403936T1
(de)
*
|
2002-04-30 |
2008-08-15 |
Hitachi Chemical Co Ltd |
Polierfluid und polierverfahren
|
|
US7390744B2
(en)
*
|
2004-01-29 |
2008-06-24 |
Applied Materials, Inc. |
Method and composition for polishing a substrate
|
|
TWI283442B
(en)
*
|
2004-09-09 |
2007-07-01 |
Sez Ag |
Method for selective etching
|
|
KR100607797B1
(ko)
*
|
2004-09-14 |
2006-08-02 |
동부일렉트로닉스 주식회사 |
실리콘 질화막 스트립 제어 장치 및 방법
|
|
WO2006110279A1
(en)
*
|
2005-04-08 |
2006-10-19 |
Sachem, Inc. |
Selective wet etching of metal nitrides
|
|
JP2006319171A
(ja)
*
|
2005-05-13 |
2006-11-24 |
Tosoh Corp |
エッチング用組成物
|
|
US7628932B2
(en)
*
|
2006-06-02 |
2009-12-08 |
Micron Technology, Inc. |
Wet etch suitable for creating square cuts in si
|
|
JP4799332B2
(ja)
|
2006-09-12 |
2011-10-26 |
株式会社東芝 |
エッチング液、エッチング方法および電子部品の製造方法
|
|
CN101605869B
(zh)
*
|
2006-12-21 |
2014-03-05 |
高级技术材料公司 |
选择性除去四氮化三硅的组合物和方法
|
|
JP2008172160A
(ja)
*
|
2007-01-15 |
2008-07-24 |
Dainippon Screen Mfg Co Ltd |
基板処理装置および基板処理方法
|
|
ITMI20071002A1
(it)
*
|
2007-05-17 |
2008-11-18 |
Petracem Srl |
Manufatto per edilizia.
|
|
JP5199339B2
(ja)
*
|
2007-05-18 |
2013-05-15 |
ティーイーエル エフエスアイ，インコーポレイティド |
水蒸気または蒸気を用いた基板の処理方法
|
|
JP4358259B2
(ja)
|
2007-06-05 |
2009-11-04 |
株式会社東芝 |
半導体製造装置および半導体製造方法
|
|
US8211810B2
(en)
|
2007-09-21 |
2012-07-03 |
Dainippon Screen Mfg. Co., Ltd. |
Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
|
|
JP5009207B2
(ja)
*
|
2007-09-21 |
2012-08-22 |
大日本スクリーン製造株式会社 |
基板処理装置
|
|
US8298435B2
(en)
*
|
2007-10-19 |
2012-10-30 |
International Business Machines Corporation |
Selective etching bath methods
|
|
JP4966223B2
(ja)
*
|
2008-02-29 |
2012-07-04 |
大日本スクリーン製造株式会社 |
基板処理装置および基板処理方法
|
|
US20110114564A1
(en)
|
2008-07-07 |
2011-05-19 |
Lubrizol Advanced Materials, Inc. |
Preventing Silica And Silicate Scale With Inhibitors In Industrial Water Systems
|
|
US8685272B2
(en)
|
2008-08-08 |
2014-04-01 |
Samsung Electronics Co., Ltd. |
Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
|
|
KR101316054B1
(ko)
*
|
2008-08-08 |
2013-10-10 |
삼성전자주식회사 |
실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법
|
|
US8881811B2
(en)
|
2008-10-10 |
2014-11-11 |
Halliburton Energy Services, Inc. |
Additives to suppress silica scale build-up and methods of use thereof
|
|
US20110198531A1
(en)
*
|
2008-10-20 |
2011-08-18 |
Nitta Haas Incorporated |
Composition for polishing silicon nitride and method of controlling selectivity using same
|
|
US20100294984A1
(en)
|
2009-05-22 |
2010-11-25 |
General Electric Company |
Methods of inhibiting scale of silica
|
|
WO2011019222A2
(ko)
*
|
2009-08-13 |
2011-02-17 |
동우 화인켐 주식회사 |
구리 배선의 형성을 위한 식각액 조성물
|
|
EP2533274B1
(en)
*
|
2010-02-01 |
2014-07-30 |
JSR Corporation |
Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same
|
|
CN102834182B
(zh)
*
|
2010-04-27 |
2016-11-02 |
泰尔Fsi公司 |
在邻近基板表面处的受控流体混合情况下的微电子基板的湿处理
|
|
JP2012033561A
(ja)
|
2010-07-28 |
2012-02-16 |
Sanyo Chem Ind Ltd |
窒化ケイ素用エッチング液
|
|
KR101660262B1
(ko)
|
2010-09-07 |
2016-09-27 |
삼성전자주식회사 |
수직형 반도체 소자의 제조 방법
|
|
JP2012074601A
(ja)
*
|
2010-09-29 |
2012-04-12 |
Dainippon Screen Mfg Co Ltd |
基板処理装置および基板処理方法
|
|
CN102443395B
(zh)
*
|
2010-09-30 |
2016-01-20 |
韩国泰科诺赛美材料株式会社 |
用于湿法蚀刻二氧化硅的组合物
|
|
US8727002B2
(en)
|
2010-12-14 |
2014-05-20 |
Halliburton Energy Services, Inc. |
Acidic treatment fluids containing non-polymeric silica scale control additives and methods related thereto
|
|
US9221700B2
(en)
|
2010-12-22 |
2015-12-29 |
Ecolab Usa Inc. |
Method for inhibiting the formation and deposition of silica scale in aqueous systems
|
|
US9257292B2
(en)
|
2011-03-30 |
2016-02-09 |
Tokyo Electron Limited |
Etch system and method for single substrate processing
|
|
TW201243030A
(en)
|
2011-04-20 |
2012-11-01 |
Applied Materials Inc |
Selective silicon nitride etch
|
|
US8623766B2
(en)
*
|
2011-09-20 |
2014-01-07 |
Cabot Microelectronics Corporation |
Composition and method for polishing aluminum semiconductor substrates
|
|
KR101782329B1
(ko)
*
|
2011-10-18 |
2017-09-28 |
삼성전자주식회사 |
식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
|
|
US8877075B2
(en)
*
|
2012-02-01 |
2014-11-04 |
Infineon Technologies Ag |
Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
|
|
KR101194245B1
(ko)
*
|
2012-02-29 |
2012-10-29 |
와이엠티 주식회사 |
화학강화 유리의 제조방법
|
|
TWI634083B
(zh)
|
2012-03-30 |
2018-09-01 |
羅門哈斯公司 |
矽石垢之協同性控制
|
|
US9076879B2
(en)
*
|
2012-09-11 |
2015-07-07 |
Samsung Electronics Co., Ltd. |
Three-dimensional semiconductor memory device and method for fabricating the same
|
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
|
US9058976B2
(en)
|
2012-11-06 |
2015-06-16 |
International Business Machines Corporation |
Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
|
|
JP2014099480A
(ja)
|
2012-11-13 |
2014-05-29 |
Fujifilm Corp |
半導体基板のエッチング方法及び半導体素子の製造方法
|
|
US8946023B2
(en)
|
2013-03-12 |
2015-02-03 |
Sandisk Technologies Inc. |
Method of making a vertical NAND device using sequential etching of multilayer stacks
|
|
JP6139975B2
(ja)
*
|
2013-05-15 |
2017-05-31 |
株式会社フジミインコーポレーテッド |
研磨用組成物
|
|
JP6206336B2
(ja)
|
2013-06-17 |
2017-10-04 |
王子ホールディングス株式会社 |
半導体発光素子用基板、半導体発光素子、半導体発光素子用基板の製造方法、および、半導体発光素子の製造方法
|
|
JP6502633B2
(ja)
*
|
2013-09-30 |
2019-04-17 |
芝浦メカトロニクス株式会社 |
基板処理方法及び基板処理装置
|
|
JP6221155B2
(ja)
*
|
2013-12-11 |
2017-11-01 |
株式会社Ｓｃｒｅｅｎホールディングス |
基板処理方法および基板処理装置
|
|
TWI543251B
(zh)
|
2014-04-28 |
2016-07-21 |
台灣積體電路製造股份有限公司 |
具矽濃度控制的蝕刻製程方法及其系統
|
|
US9305932B2
(en)
|
2014-06-30 |
2016-04-05 |
Sandisk Technologies Inc. |
Methods of making three dimensional NAND devices
|
|
JP6580397B2
(ja)
*
|
2014-07-17 |
2019-09-25 |
ソウルブレイン シーオー．， エルティーディー． |
エッチング用組成物及びこれを用いた半導体素子の製造方法
|
|
KR20160010267A
(ko)
*
|
2014-07-17 |
2016-01-27 |
솔브레인 주식회사 |
식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
|
|
US9868902B2
(en)
*
|
2014-07-17 |
2018-01-16 |
Soulbrain Co., Ltd. |
Composition for etching
|
|
KR102242951B1
(ko)
*
|
2014-08-12 |
2021-04-22 |
주식회사 이엔에프테크놀로지 |
실리콘 산화막 에칭액
|
|
KR20160050536A
(ko)
*
|
2014-10-30 |
2016-05-11 |
램테크놀러지 주식회사 |
질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
|
|
US9659788B2
(en)
|
2015-08-31 |
2017-05-23 |
American Air Liquide, Inc. |
Nitrogen-containing compounds for etching semiconductor structures
|
|
US10325779B2
(en)
*
|
2016-03-30 |
2019-06-18 |
Tokyo Electron Limited |
Colloidal silica growth inhibitor and associated method and system
|