JP2018050038A - プラズマ支援および熱原子層堆積プロセスによる窒化膜形成 - Google Patents
プラズマ支援および熱原子層堆積プロセスによる窒化膜形成 Download PDFInfo
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Abstract
【解決手段】単一の反応器内で1回以上のプラズマ強化原子層堆積サイクルおよび1回以上の熱原子層堆積サイクルを用いて窒化膜を堆積する。熱原子層堆積サイクルの数は、プラズマ強化原子層堆積サイクルの数以上とする。シリコン窒化膜はより高い屈折率を有する、よりシリコンリッチな膜が得られるように、シリコン窒化膜を微調整することができる。プラズマ強化原子層堆積サイクルおよび熱原子層堆積サイクルは、同じウェハ温度に維持する。
【選択図】図4
Description
以下の説明では、提示するコンセプトについての完全な理解を与えるため、様々な具体的詳細について記載する。提示するコンセプトは、それら特定の詳細の一部またはすべてを伴うことなく実施してよい。一方で、記載するコンセプトを不必要に不明瞭にすることがないよう、周知の工程処理については詳細に記載していない。いくつかのコンセプトは、具体的な実施形態に関連して説明されるものの、それらの実施形態は限定するものではないことは理解されるであろう。
ALDは、逐次自己制御反応を用いて材料の薄層を堆積させる手法である。典型的には、ALDサイクルは、少なくとも1種の反応物質を供給して基板表面に吸着させ、その後、吸着した反応物質を1種以上の反応物質と反応させることで、膜の部分的な層を形成するための工程を含む。一例として、シリコン窒化物堆積サイクルは、以下の工程を含み得る。(i)シリコン含有前駆体の供給/吸着、(ii)チェンバからのシリコン含有前駆体のパージ、(iii)窒素含有反応物質のプラズマの供給、(iv)チェンバからのプラズマのパージ。各種前駆体と共反応物質のパルスを用いて、他の種類の膜を堆積させてよい。
2.0よりも高い屈折率を有するシリコン窒化膜を堆積するための従来の方法は、CVD炉反応器を用いて実施されることがある。一部の実施形態では、CVD炉反応器は、低圧化学気相成長(LPCVD)炉反応器である。一部のCVD炉反応器は、より均一な温度分布および対流効果の低減という利点を有するホットウォールシステムであり得る。
本開示は、単一の反応器内でPEALDプロセスと熱ALDプロセスの組み合わせを用いて、ウェハ上に窒化膜を堆積する方法に関する。高スループットの枚葉式ウェハ反応器において窒化膜を堆積させるために、PEALDプロセスのサイクルと熱ALDプロセスのサイクルを混合することができる。PEALDプロセスによって、低堆積温度、ウェハ全体にわたる高コンフォーマル性、高スループットでのウェハ間の厳密制御が可能となる。熱ALDプロセスによって、屈折率、各種元素の相対濃度、密度、WER、DER、および電荷トラップ層での電荷トラップ能力のような特性など、窒化膜の材料特性の向上した調整が可能となる。PEALDプロセスと熱ALDプロセスは、単一の反応器内で同様のウェハ温度で作用し得る。一部の実施形態では、PEALDサイクルと熱ALDサイクルの両方において、ウェハ温度を、約500℃〜約630℃の間の温度に維持することができる。PEALDサイクル単独では実現されないかもしれない窒化膜の特性の微調整を可能とするために、PEALDサイクルと熱ALDサイクルを順次繰り返して実行することができる。
混合モードALDプロセスにおいてXとYの値を調整することにより薄膜の特性を微調整することに加えて、薄膜の特性に影響を及ぼすように、各々の入れ子PEALDサイクルおよび熱ALDサイクルのプロセス条件を調整することができる。表1は、PEALDサイクルと熱ALDサイクルの混合を用いてシリコン窒化膜を堆積させるためのプロセス条件および適切な範囲の一例を示している。表1に示すように、プロセス条件の多くは、同じ処理チェンバ内でのPEALDサイクルと熱ALDサイクルにおいて維持することができる。ウェハ温度、ドーズ圧力、転化圧力、シリコン含有前駆体の流量、窒素含有反応物質の流量などのプロセス条件は、PEALDサイクルと熱ALDサイクルにわたって同じとすることができる。一方、表1に示すプロセス条件の例は、熱ALDサイクルのプロセス条件では、シリコン含有前駆体のドーズ時間がより長く、プラズマパワーは不要、窒素含有反応物質を転化させるための転化時間がより長くなり得ること、を示している。
図7Aは、PEALDサイクルおよび熱ALDサイクルによって窒化膜を堆積するための例示的な装置の概略図である。装置またはプロセスステーション700aは、低圧環境を維持するための処理チェンバ702を備える。共通の低圧プロセスツール環境の中に、複数の装置またはプロセスステーション700aを含み得る。例えば、図8は、マルチステーション・プロセスツール800の実施形態を示している。一部の実施形態では、詳細に後述するものなど、装置またはプロセスステーション700aの1つ以上のハードウェアパラメータを、1つ以上のシステムコントローラ750によってプログラムで調整してよい。装置またはプロセスステーション700aは、窒化膜をウェハ712上に堆積させるために、1回以上のPEALDサイクルおよび1回以上の熱ALDサイクルを含む上述の混合モードALDサイクルを実行することが可能であり得る。
システム制御ソフトウェアは、タイミング、ガスの混合、ガス流量、チェンバおよび/またはステーションの圧力、チェンバおよび/またはステーションの温度、ウェハ温度、目標パワーレベル、RF電力レベル、ウェハペデスタル、チャックおよび/またはサセプタの位置、ならびにプロセスツール800によって実施される具体的なプロセスのその他のパラメータを制御するための命令を含み得る。システム制御ソフトウェアは、任意の適切な形態で構成されてよい。例えば、様々なプロセスツールプロセスを実施するために使用されるプロセスツール構成要素の動作を制御するための、各種プロセスツール構成要素サブルーチンまたは制御オブジェクトが作成され得る。システム制御ソフトウェアは、任意の適切なコンピュータ可読プログラミング言語でコーディングされてよい。
上記の装置/プロセスは、例えば、半導体デバイス、ディスプレイ、LED、太陽電池パネルなどの作製または製造のために、リソグラフィパターニング・ツールまたはプロセスと組み合わせて用いてよい。一般に、そのようなツール/プロセスは、必ずしもそうではないが、共通の製造設備で一緒に使用または実施される。膜のリソグラフィパターニングは、通常、以下の工程の一部またはすべてを含み、各工程は、いくつかの考え得るツールを用いて実施される。(1)スピン式またはスプレー式のツールを用いて、ワークピースすなわち基板の上にフォトレジストを塗布する;(2)ホットプレートまたは炉またはUV硬化ツールを用いて、フォトレジストを硬化させる;(3)ウェハステッパなどのツールによって、可視光線または紫外線またはX線でフォトレジストを露光する;(4)ウェットベンチなどのツールを用いて、選択的にレジストを除去するようにレジストを現像し、これによりパターンを形成する;(5)ドライまたはプラズマアシスト・エッチングツールを用いて、レジストパターンを下地膜またはワークピースに転写する;(6)RFまたはマイクロ波プラズマ・レジストストリッパなどのツールを用いて、レジストを剥離する。
本発明の例示的な実施形態ならびに応用について、本明細書で図示および記載しているが、本発明の概念、範囲、および趣旨から逸脱することなく、数多くの変形および変更が可能であり、それらの変形例は、本出願を精読することで、当業者に明らかになるであろう。よって、記載の実施形態は例示とみなされるべきであって、限定するものではなく、本発明は、本明細書で提示された詳細に限定されるべきではなく、添付の特許請求の範囲および均等物の範囲内で変更してよい。
Claims (20)
- 方法であって、
ウェハ上に複数の混合モード原子層堆積(ALD)サイクルを付与することを含み、前記各モードALDサイクルは、1回以上のプラズマ強化原子層堆積(PEALD)サイクルおよび1回以上の熱原子層堆積(熱ALD)サイクルを含み、前記各PEALDサイクルおよび前記各熱ALDサイクルでは、窒素含有反応物質を前記ウェハ上の窒化層に転化させる、方法。 - 請求項1に記載の方法であって、前記複数の混合モードALDサイクルを付与することは、
前記1回以上のPEALDサイクルを付与することを含み、このとき、前記1回以上のPEALDサイクルを付与することは、
シリコン含有前駆体の第1のドーズを気相で前記ウェハに導入することと、
前記ウェハを前記窒素含有反応物質のプラズマに暴露することと、
前記窒素含有反応物質を前記ウェハ上の窒化層に転化させることと、を含み、このとき、前記窒化層はシリコン窒化層である、方法。 - 請求項2に記載の方法であって、前記複数の混合モードALDサイクルを付与することは、
前記1回以上の熱ALDサイクルを付与することを含み、このとき、前記1回以上の熱ALDサイクルを付与することは、
前記シリコン含有前駆体の第2のドーズを気相で前記ウェハに導入することと、
高温で前記ウェハを前記窒素含有反応物質に暴露することと、
前記高温で前記窒素含有反応物質を窒化層に転化させることと、を含み、このとき、前記窒化層はシリコン窒化層である、方法。 - 請求項3に記載の方法であって、前記高温は、少なくとも500℃以上である、方法。
- 請求項3に記載の方法であって、前記ウェハを前記窒素含有反応物質の前記プラズマに暴露する間、前記ウェハを前記高温に維持する、方法。
- 請求項3に記載の方法であって、前記高温で前記ウェハを前記窒素含有前駆体に暴露する熱暴露時間は、前記ウェハを前記窒素含有前駆体の前記プラズマに暴露するプラズマ暴露時間よりも長い、方法。
- 請求項3に記載の方法であって、前記シリコン窒化層中のシリコン対窒素濃度比は、1.2:1〜1.8:1の間である、方法。
- 請求項3に記載の方法であって、前記シリコン窒化層は、約2.0〜約2.5の間の屈折率を有する、方法。
- 請求項3に記載の方法であって、前記窒素含有反応物質は、アミンまたはアンモニアを含む、方法。
- 請求項3に記載の方法であって、前記シリコン含有前駆体は、ハロゲン化シランを含む、方法。
- 請求項1から請求項10のいずれか1項に記載の方法であって、前
記各混合モードALDサイクルにおいて、前記1回以上の熱ALDサイクルの数は、前記1回以上のPEALDサイクルの数以上である、方法。 - 請求項1から請求項10のいずれか1項に記載の方法であって、前記ウェハは、複数のフィーチャを含み、前記フィーチャの各々は、10:1よりも高い深さ対幅アスペクト比を有する、方法。
- 窒化膜をウェハ上に製造する方法であって、
ウェハを処理チェンバ内に供給することと、
窒素含有反応物質のプラズマ転化によって1つ以上の窒化層をウェハ上に堆積させるために、1回以上のプラズマ強化原子層堆積(PEALD)サイクルを付与することと、
前記1回以上のPEALDサイクルの前または後に、前記窒素含有反応物質の熱転化によって1つ以上の窒化層を前記ウェハ上に堆積させるために、1回以上の熱原子層堆積(熱ALD)サイクルを付与することと、
前記1つ以上の窒化層から窒化膜を形成することと、を含む方法。 - 請求項13に記載の方法であって、前記熱ALDサイクルの数は、前記PEALDサイクルの数以上である、方法。
- 請求項13に記載の方法であって、前記1回以上のPEALDサイクルの付与中および前記1回以上の熱ALDサイクルの付与中は、前記ウェハの500℃以上の温度を維持する、方法。
- 請求項13に記載の方法であって、前記窒素含有反応物質の熱転化の時間は、前記窒素含有反応物質のプラズマ転化の時間よりも長い、方法。
- 請求項13から請求項16のいずれか1項に記載の方法であって、前記窒化膜は、シリコン窒化膜である、方法。
- 請求項17に記載の方法であって、前記シリコン窒化膜は、約2.0〜約2.5の間の屈折率を有する、方法。
- 請求項17に記載の方法であって、前記シリコン窒化膜中のシリコン対窒素濃度比は、1.2:1〜1.8:1の間である、方法。
- 請求項13から請求項16のいずれか1項に記載の方法であって、前記1回以上のPEALDサイクルを付与することは、前記窒素含有反応物質のプラズマ転化の前に、シリコン含有前駆体の第1のドーズを導入することを含み、
前記1回以上の熱ALDサイクルを付与することは、前記窒素含有反応物質の熱転化の前に、前記シリコン含有前駆体の第2のドーズを導入することを含み、
前記シリコン含有前駆体は、ハロゲン化シランを含み、
前記窒素含有反応物質は、アミンまたはアンモニアを含む、方法。
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