JP2017055116A - 窒化物半導体基板の製造方法、窒化物半導体基板およびその加熱装置 - Google Patents
窒化物半導体基板の製造方法、窒化物半導体基板およびその加熱装置 Download PDFInfo
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- JP2017055116A JP2017055116A JP2016176298A JP2016176298A JP2017055116A JP 2017055116 A JP2017055116 A JP 2017055116A JP 2016176298 A JP2016176298 A JP 2016176298A JP 2016176298 A JP2016176298 A JP 2016176298A JP 2017055116 A JP2017055116 A JP 2017055116A
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- substrate
- nitride semiconductor
- buffer layer
- group iii
- aln
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- 239000000758 substrate Substances 0.000 title claims abstract description 866
- 239000004065 semiconductor Substances 0.000 title claims abstract description 394
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 363
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 238000010438 heat treatment Methods 0.000 title claims description 84
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 261
- 239000010980 sapphire Substances 0.000 claims abstract description 261
- 238000000137 annealing Methods 0.000 claims abstract description 191
- 239000002243 precursor Substances 0.000 claims abstract description 138
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 17
- 230000005593 dissociations Effects 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 395
- 238000000034 method Methods 0.000 claims description 108
- 239000007789 gas Substances 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 51
- 238000004140 cleaning Methods 0.000 claims description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 24
- 239000011261 inert gas Substances 0.000 claims description 22
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 19
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 19
- 238000004381 surface treatment Methods 0.000 claims description 18
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 229910002601 GaN Inorganic materials 0.000 claims description 10
- 239000003870 refractory metal Substances 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 117
- 238000010586 diagram Methods 0.000 description 50
- 239000013078 crystal Substances 0.000 description 29
- 125000006850 spacer group Chemical group 0.000 description 22
- 230000003746 surface roughness Effects 0.000 description 18
- 238000011156 evaluation Methods 0.000 description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- -1 AlGaN Chemical compound 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
[窒化物半導体基板の構成]
まず、図1および図2を参照しながら、実施の形態に係る窒化物半導体基板について説明する。図1は、本実施の形態に係る窒化物半導体基板の概略図である。図2は、図1に示す窒化物半導体基板の製造方法を示す概略図である。
次に、図3Aを参照しながら、実施の形態に係る窒化物半導体基板の製造装置について説明する。図3Aは、本実施の形態に係る窒化物半導体基板の製造装置であるMOVPE(metal organic vapor phase epitaxy)装置の概略図である。
次に、図4および図5を参照しながら、実施の形態に係る窒化物半導体基板の製造方法について説明する。図4は、本実施の形態に係る窒化物半導体基板の製造方法を示すフローチャートである。図5は、本実施の形態に係る窒化物半導体基板の製造方法を示すタイムチャートである。
次に、図11〜図27を参照しながら、本実施の形態に係る製造方法により製造した窒化物半導体基板の特性について説明する。
2、80、102、112、122、202、302、502、602、702 サファイア基板
3 AlN緩衝層(窒化アルミニウム緩衝層)
3a、103a、113a、123a、203a、303a AlN緩衝層の前駆体(前駆体)
4 AlN層
10 MOVPE装置
11 基板(サファイア基板)
12 基板トレー
13 ヒータ
14 熱電対
15 温度制御装置
16 押圧ガス吸気口
17 材料ガス吸気口
18 反応ガス吸気口
19 外圧ガス供給口
20 リアクタ
21 排気口
22 放射温度計
40、40a、40b 気密容器
41、41a、41b 容器本体
42、42a、42b 蓋
43 気密空間
45a、45b 貫通孔
46a、46b 基台
50 帯部材
50a 突起部
51、52、65 基板ホルダ
52a、52b 凹部
54a、54b スペーサ
60 加熱装置(アニール装置)
61 炉空間
62 高純度カーボン製容器
63 蓋
64 ガス抜き用穴
66 温度センサー
65a ホールド部
65b 隙間
65c T字溝(またはL字溝)
67 指令装置
68 比較装置
69 制御装置
70 流入ガス配管
71 流入ガス制御弁
72 排出ガス配管
73 排出ガス制御弁
74a〜74d 加熱ヒータ
80a 底面蓋
81、82 上面蓋
103、703 AlN層
503 AlN基板
Claims (20)
- サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板上にIII族窒化物半導体からなる緩衝層の前駆体を形成した基板をアニールするに際し、形成された前記III族窒化物半導体の主面から前記III族窒化物半導体の成分が解離するのを抑制するためのカバー部材で前記III族窒化物半導体の主面を覆った気密状態で、前記III族窒化物半導体が形成された前記基板をアニールするアニール工程を含む
窒化物半導体基板の製造方法。 - 前記アニール工程では、前記基板を、1400℃以上1750℃以下の基板温度で、かつ、不活性ガスまたは不活性ガスにアンモニアガスを添加した混合ガスの雰囲気で、前記基板をアニールする
請求項1記載の窒化物半導体基板の製造方法。 - 前記気密状態では、前記カバー部材と前記III族窒化物半導体の主面との間におけるガスは、実質的に流れない滞留状態である
請求項1または2記載の窒化物半導体基板の製造方法。 - 前記気密状態では、前記III族窒化物半導体の主面と前記カバー部材との間の距離は、1mm以下である
請求項1〜3のいずれか1項に記載の窒化物半導体基板の製造方法。 - 前記カバー部材は、III族窒化物半導体が形成された別の基板であり、
前記気密状態では、当該基板のIII族窒化物半導体と前記別の基板のIII族窒化物半導体とが対向するように、当該基板の上方に前記別の基板が配置される
請求項1〜4のいずれか1項に記載の窒化物半導体基板の製造方法。 - 前記気密状態では、前記基板は、容器本体と蓋とから構成される気密容器に収容されており、
前記カバー部材は、前記蓋である
請求項1〜5のいずれか1項に記載の窒化物半導体基板の製造方法。 - サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板を準備する準備工程と、
前記基板を、920℃以上で1210℃以下の基板温度で加熱するクリーニング工程と、
前記クリーニング工程の後、かつ、前記緩衝層の前駆体を形成する前に、前記基板を、所定の温度で、かつ、アンモニアガスの雰囲気に置くプリフロー工程と、
前記基板上にIII族窒化物半導体からなる緩衝層を形成する緩衝層形成工程とを含み、
前記緩衝層形成工程は、
前記基板上に前記III族窒化物半導体を前記前駆体として形成するIII族窒化物半導体形成工程と、
前記III族窒化物半導体形成工程によって前記III族窒化物半導体が形成された前記基板をアニールする前記アニール工程を含む
請求項1〜6のいずれか1項に記載の窒化物半導体基板の製造方法。 - 前記III族窒化物半導体は、AlxGayIn(1−x−y)N(0≦x≦1、0≦y≦1、(x+y)≦1)で表わされる窒化アルミニウム、窒化アルミニウムガリウム、または、窒化アルミニウムガリウムインジウムであり、
前記カバー部材は、III族窒化物半導体、炭素、窒化ホウ素、酸化アルミニウム(サファイア)、セラミック、炭化ケイ素、高融点金属(モリブデン、タングステン、イリジウムおよびこれらの合金)、ジルコニア、炭化タンタルの少なくとも一つから構成される
請求項1〜7のいずれか1項に記載の窒化物半導体基板の製造方法。 - サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板上にIII族窒化物半導体が形成された基板をアニールすることでAlN緩衝層を形成するアニール工程と、
前記アニールした後の基板の表面を処理する表面処理工程とを含み、
前記表面処理工程では、1000〜1300℃の雰囲気温度で水素または窒素とアンモニアとを含む混合ガスの雰囲気下に一定時間、前記AlN緩衝層を放置する
窒化物半導体基板の製造方法。 - サファイア基板の表面にAlN層を形成して成る半導体基板の加熱によるAlN成分の解離を抑制するため、アニール炉内に配置され前記半導体基板の動きを規制するホルダに前記半導体基板を重ね合わせて収納する工程と、
前記アニール炉内を不活性ガス、または不活性ガスにアンモニアを加えたガスを充填する工程と、
前記半導体基板の温度を1400℃以上1750℃以下でアニールする工程とを含む
窒化物半導体基板の製造方法。 - サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板と、
前記基板上に形成された第1のIII族窒化物半導体からなる緩衝層とを備え、
前記緩衝層は、(10−12)面におけるX線ロッキングカーブの半値幅が400arcsec以下である
請求項1〜10のいずれか1項に記載の窒化物半導体基板の製造方法で作られたことを特徴とする窒化物半導体基板。 - サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板と、
前記基板上に形成された第1のIII族窒化物半導体からなる緩衝層とを備え、
前記緩衝層は、不純物としてのシリコン原子、酸素原子および炭素原子のそれぞれを1018/cm3以上含み、前記酸素原子および炭素原子は前記シリコン原子よりも多く、(10−12)面におけるX線ロッキングカーブの半値幅が1000arcsec以下である
請求項1〜10のいずれか1項に記載の窒化物半導体基板の製造方法で作られたことを特徴とする窒化物半導体基板。 - 前記緩衝層は、スパッタ法により成膜されている
請求項12記載の窒化物半導体基板。 - 前記緩衝層は、さらに、(0002)面におけるX線ロッキングカーブの半値幅が100arcsec以下であり、
前記緩衝層は、主面側がAl極性である
請求項11〜13のいずれか1項に記載の窒化物半導体基板。 - さらに、前記緩衝層上に再成長された第2のIII族窒化物半導体を備える
請求項11〜14のいずれか1項に記載の窒化物半導体基板。 - 前記第1のIII族窒化物半導体および前記第2のIII族窒化物半導体は、AlxGayIn(1−x−y)N(0≦x≦1、0≦y≦1、(x+y)≦1)で表わされる窒化アルミニウム、窒化アルミニウムガリウム、または、窒化アルミニウムガリウムインジウムである
請求項15記載の窒化物半導体基板。 - ヒータによって加熱制御される炉の内部に、厚さ0.05〜1μmのIII族窒化物半導体からなる緩衝層の前駆体を有し、サファイア、炭化ケイ素および窒化アルミニウムの少なくとも一つからなる基板を保持する基板ホルダを、前記基板の加熱時に有する
半導体基板用の加熱装置。 - 前記基板ホルダの深さは、前記基板1枚の厚みより厚く、前記基板ホルダが前記基板を2枚以上保持することができる深さであり、
前記基板ホルダの材質はIII族窒化物半導体、炭素、窒化ホウ素、酸化アルミニウム(サファイア)、セラミック、炭化ケイ素、高融点金属(モリブデン、タングステン、イリジウムおよびこれらの合金)、ジルコニア、炭化タンタルの少なくとも一つから構成される
請求項17に記載の半導体基板用の加熱装置。 - 前記基板ホルダは、底面蓋と、上面蓋とを有し、
前記基板を基板ホルダに設置した際に前記底面蓋に対向する前記基板の材質と前記底面蓋の材質とは同じであり、
前記上面蓋に対向する前記基板の材質と前記上面蓋の材質とは同じである
請求項17または18に記載の半導体基板用の加熱装置。 - 前記基板ホルダには、III族窒化物半導体からなる緩衝層の前駆体を有する基板が、前記前駆体同士が対向する様に保持されている
請求項17〜19のいずれか1項に記載の半導体基板用の加熱装置。
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US (2) | US10260146B2 (ja) |
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JP (4) | JP6238322B2 (ja) |
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JP7364183B2 (ja) | 2019-05-31 | 2023-10-18 | 国立研究開発法人理化学研究所 | AlNバッファー層を備えるテンプレート基板および窒化物半導体素子ならびにそれらの製造方法 |
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WO2021172531A1 (ja) | 2020-02-27 | 2021-09-02 | 国立大学法人三重大学 | 窒化物半導体基板、半導体素子及び窒化物半導体基板の製造方法 |
CN113380603A (zh) * | 2021-05-18 | 2021-09-10 | 厦门大学 | 高硼组分二维iii族多元氮化物混合晶体及其制备方法 |
WO2023038129A1 (ja) | 2021-09-09 | 2023-03-16 | 国立大学法人三重大学 | Iii族窒化物発光デバイス、iii族窒化物エピタキシャルウエハ、iii族窒化物発光デバイスを作製する方法 |
KR20240053652A (ko) | 2021-09-09 | 2024-04-24 | 고쿠리츠다이가쿠호진 미에다이가쿠 | Iii족 질화물 발광 디바이스, iii족 질화물 에피택셜 웨이퍼, iii족 질화물 발광 디바이스를 제작하는 방법 |
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KR102052287B1 (ko) | 2019-12-04 |
JP6830658B2 (ja) | 2021-02-17 |
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US10260146B2 (en) | 2019-04-16 |
JP2021073702A (ja) | 2021-05-13 |
CN107078030A (zh) | 2017-08-18 |
JP6238322B2 (ja) | 2017-11-29 |
CN107078030B (zh) | 2022-08-23 |
US20180274088A1 (en) | 2018-09-27 |
JP6311834B2 (ja) | 2018-04-18 |
CN115064621A (zh) | 2022-09-16 |
EP3349238B1 (en) | 2021-09-01 |
US20180204722A1 (en) | 2018-07-19 |
JP2018056568A (ja) | 2018-04-05 |
WO2017043628A1 (ja) | 2017-03-16 |
TWI712701B (zh) | 2020-12-11 |
JP2018046283A (ja) | 2018-03-22 |
EP3349238A1 (en) | 2018-07-18 |
JP7244116B2 (ja) | 2023-03-22 |
TW201718921A (zh) | 2017-06-01 |
EP3349238A4 (en) | 2019-07-10 |
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