JP2015228495A5 - - Google Patents
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- JP2015228495A5 JP2015228495A5 JP2015095288A JP2015095288A JP2015228495A5 JP 2015228495 A5 JP2015228495 A5 JP 2015228495A5 JP 2015095288 A JP2015095288 A JP 2015095288A JP 2015095288 A JP2015095288 A JP 2015095288A JP 2015228495 A5 JP2015228495 A5 JP 2015228495A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- thin film
- crystalline oxide
- semiconductor thin
- film according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 31
- 239000010409 thin film Substances 0.000 claims 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 5
- 230000005669 field effect Effects 0.000 claims 5
- 229910052758 niobium Inorganic materials 0.000 claims 5
- 239000010955 niobium Substances 0.000 claims 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000010936 titanium Substances 0.000 claims 5
- 229910052719 titanium Inorganic materials 0.000 claims 5
- 229910052720 vanadium Inorganic materials 0.000 claims 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 5
- 229910052726 zirconium Inorganic materials 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 230000006698 induction Effects 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 239000010431 corundum Substances 0.000 claims 1
- -1 gate Rumaniumu Chemical compound 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015095288A JP6557899B2 (ja) | 2014-05-08 | 2015-05-07 | 結晶性積層構造体、半導体装置 |
| JP2019053236A JP6893625B2 (ja) | 2014-05-08 | 2019-03-20 | 結晶性積層構造体、半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014097244 | 2014-05-08 | ||
| JP2014097244 | 2014-05-08 | ||
| JP2015095288A JP6557899B2 (ja) | 2014-05-08 | 2015-05-07 | 結晶性積層構造体、半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019053236A Division JP6893625B2 (ja) | 2014-05-08 | 2019-03-20 | 結晶性積層構造体、半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015228495A JP2015228495A (ja) | 2015-12-17 |
| JP2015228495A5 true JP2015228495A5 (https=) | 2018-06-14 |
| JP6557899B2 JP6557899B2 (ja) | 2019-08-14 |
Family
ID=52146230
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015095288A Active JP6557899B2 (ja) | 2014-05-08 | 2015-05-07 | 結晶性積層構造体、半導体装置 |
| JP2019053236A Active JP6893625B2 (ja) | 2014-05-08 | 2019-03-20 | 結晶性積層構造体、半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019053236A Active JP6893625B2 (ja) | 2014-05-08 | 2019-03-20 | 結晶性積層構造体、半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9379190B2 (https=) |
| EP (1) | EP2942803B1 (https=) |
| JP (2) | JP6557899B2 (https=) |
| CN (3) | CN105097957A (https=) |
| TW (1) | TWI607511B (https=) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379190B2 (en) * | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
| JP6281146B2 (ja) * | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
| EP3783662B1 (en) * | 2014-09-02 | 2025-03-12 | Flosfia Inc. | Laminated structure and method for manufacturing same, semiconductor device, and crystalline film |
| JP6906217B2 (ja) * | 2015-12-18 | 2021-07-21 | 株式会社Flosfia | 半導体装置 |
| CN107068773B (zh) | 2015-12-18 | 2021-06-01 | 株式会社Flosfia | 半导体装置 |
| JP2017128492A (ja) * | 2016-01-15 | 2017-07-27 | 株式会社Flosfia | 結晶性酸化物膜 |
| US10158029B2 (en) * | 2016-02-23 | 2018-12-18 | Analog Devices, Inc. | Apparatus and methods for robust overstress protection in compound semiconductor circuit applications |
| JP6705962B2 (ja) * | 2016-06-03 | 2020-06-03 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系結晶膜の成長方法及び結晶積層構造体 |
| US10483110B2 (en) * | 2016-07-26 | 2019-11-19 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
| JP6932904B2 (ja) * | 2016-08-24 | 2021-09-08 | 株式会社Flosfia | 半導体装置 |
| US10804362B2 (en) | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
| JP6951715B2 (ja) | 2016-09-15 | 2021-10-20 | 株式会社Flosfia | 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法 |
| US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
| JP2018067672A (ja) | 2016-10-21 | 2018-04-26 | 株式会社ブイ・テクノロジー | 酸化物半導体装置及びその製造方法 |
| CN115101587A (zh) | 2016-11-07 | 2022-09-23 | 株式会社Flosfia | 结晶性多层结构、半导体装置及多层结构 |
| JP7116409B2 (ja) * | 2017-02-27 | 2022-08-10 | 株式会社タムラ製作所 | トレンチｍｏｓ型ショットキーダイオード |
| JP6967238B2 (ja) * | 2017-02-28 | 2021-11-17 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
| JP2019007048A (ja) * | 2017-06-23 | 2019-01-17 | トヨタ自動車株式会社 | 成膜装置 |
| CN107293511B (zh) * | 2017-07-05 | 2019-11-12 | 京东方科技集团股份有限公司 | 一种膜层退火设备及退火方法 |
| CN107464844A (zh) * | 2017-07-20 | 2017-12-12 | 中国电子科技集团公司第十三研究所 | 氧化镓场效应晶体管的制备方法 |
| JP7166522B2 (ja) * | 2017-08-21 | 2022-11-08 | 株式会社Flosfia | 結晶膜の製造方法 |
| JP7065440B2 (ja) * | 2017-09-04 | 2022-05-12 | 株式会社Flosfia | 半導体装置の製造方法および半導体装置 |
| GB2601276B (en) * | 2017-12-11 | 2022-09-28 | Pragmatic Printing Ltd | Schottky diode |
| GB2569196B (en) | 2017-12-11 | 2022-04-20 | Pragmatic Printing Ltd | Schottky diode |
| CN108493234A (zh) * | 2018-05-10 | 2018-09-04 | 广东省半导体产业技术研究院 | 一种鳍式沟道的氧化镓基垂直场效应晶体管及其制备方法 |
| TWI859146B (zh) * | 2018-07-12 | 2024-10-21 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置和半導體系統 |
| TW202006945A (zh) * | 2018-07-12 | 2020-02-01 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置和半導體系統 |
| TWI897850B (zh) * | 2018-07-12 | 2025-09-21 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置和半導體系統 |
| TWI879736B (zh) * | 2018-07-12 | 2025-04-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置和半導體系統 |
| JP2020011858A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
| JP2020011859A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
| TWI777078B (zh) * | 2018-08-01 | 2022-09-11 | 日本商出光興產股份有限公司 | 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器 |
| JP6857641B2 (ja) | 2018-12-19 | 2021-04-14 | 信越化学工業株式会社 | 成膜方法及び成膜装置 |
| JP7315136B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| DE112019007009B4 (de) * | 2019-03-13 | 2023-04-27 | Mitsubishi Electric Corporation | Halbleitereinheit |
| US11088242B2 (en) | 2019-03-29 | 2021-08-10 | Flosfia Inc. | Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device |
| KR102936751B1 (ko) | 2019-04-18 | 2026-03-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 릴레이 및 반도체 장치 |
| JP7409790B2 (ja) * | 2019-06-20 | 2024-01-09 | 信越化学工業株式会社 | 酸化物半導体膜及び半導体装置 |
| CN114402437A (zh) * | 2019-07-16 | 2022-04-26 | 株式会社Flosfia | 层叠结构体和半导体装置 |
| CN110571152A (zh) * | 2019-08-14 | 2019-12-13 | 青岛佳恩半导体有限公司 | 一种igbt背面电极缓冲层的制备方法 |
| EP4023794A4 (en) * | 2019-08-27 | 2023-09-20 | Shin-Etsu Chemical Co., Ltd. | LAYERED STRUCTURE BODY AND METHOD FOR PRODUCING LAYERED STRUCTURE BODY |
| KR102849602B1 (ko) * | 2019-09-30 | 2025-08-21 | 가부시키가이샤 플로스피아 | 적층 구조체 및 반도체 장치 |
| CN110752159B (zh) * | 2019-10-28 | 2023-08-29 | 中国科学技术大学 | 对氧化镓材料退火的方法 |
| CN111106167A (zh) * | 2019-11-27 | 2020-05-05 | 太原理工大学 | 一种择优取向的Ga2O3和SnO2混相膜基传感器的制备方法 |
| CN114747020A (zh) * | 2019-11-29 | 2022-07-12 | 株式会社Flosfia | 半导体装置及半导体系统 |
| EP4068389A4 (en) * | 2019-11-29 | 2024-01-03 | Flosfia Inc. | Semiconductor device and semiconductor system |
| JP7530615B2 (ja) * | 2020-01-10 | 2024-08-08 | 株式会社Flosfia | 結晶、半導体素子および半導体装置 |
| KR102812668B1 (ko) * | 2020-01-10 | 2025-05-23 | 가부시키가이샤 플로스피아 | 도전성 금속 산화막, 반도체 소자 및 반도체 장치 |
| JP7478334B2 (ja) * | 2020-01-10 | 2024-05-07 | 株式会社Flosfia | 半導体素子および半導体装置 |
| TWI879858B (zh) * | 2020-01-10 | 2025-04-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置及半導體系統 |
| JP7807627B2 (ja) * | 2020-02-07 | 2026-01-28 | 株式会社Flosfia | 半導体素子および半導体装置 |
| US20230253203A1 (en) * | 2020-06-29 | 2023-08-10 | Shin-Etsu Chemical Co., Ltd. | Method for producing doping raw-material solution for film formation, method for producing laminate, doping raw-material solution for film formation, and semiconductor film |
| JPWO2022009970A1 (https=) * | 2020-07-10 | 2022-01-13 | ||
| KR20230053592A (ko) * | 2020-08-20 | 2023-04-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막방법 및 원료용액 |
| CN112103175A (zh) * | 2020-08-28 | 2020-12-18 | 上海大学 | n型氧化镓薄膜的掺杂工艺制备的钒掺杂n型氧化镓薄膜 |
| JP7469201B2 (ja) | 2020-09-18 | 2024-04-16 | 株式会社デンソー | 半導体装置とその製造方法 |
| KR102394975B1 (ko) * | 2020-10-22 | 2022-05-09 | 경북대학교 산학협력단 | 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
| CN117441234A (zh) * | 2021-04-26 | 2024-01-23 | 株式会社Flosfia | 半导体装置 |
| JP7572685B2 (ja) * | 2021-07-07 | 2024-10-24 | 株式会社Tmeic | エッチング方法 |
| US12532530B2 (en) * | 2021-09-09 | 2026-01-20 | The Regents Of The University Of Michigan | Doped aluminum-alloyed gallium oxide and ohmic contacts |
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| US7060614B2 (en) * | 2000-07-28 | 2006-06-13 | Tokyo Electron Limited | Method for forming film |
| CN101558504A (zh) * | 2006-10-17 | 2009-10-14 | 住友化学株式会社 | 热电转换材料、其制造方法、热电转换元件以及提高热电转换材料强度的方法 |
| JP5142257B2 (ja) | 2007-09-27 | 2013-02-13 | 独立行政法人産業技術総合研究所 | 不純物イオン注入層の電気的活性化方法 |
| CN102239549B (zh) * | 2008-12-08 | 2014-01-01 | 住友化学株式会社 | 半导体装置，半导体装置的制造方法，半导体基板，和半导体基板的制造方法 |
| KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101895398B1 (ko) * | 2011-04-28 | 2018-10-25 | 삼성전자 주식회사 | 산화물 층의 형성 방법 및 이를 포함하는 반도체 소자의 제조 방법 |
| US9466618B2 (en) * | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
| JP6013685B2 (ja) * | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP5948581B2 (ja) | 2011-09-08 | 2016-07-06 | 株式会社Flosfia | Ｇａ２Ｏ３系半導体素子 |
| WO2013035843A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ｇａ2Ｏ3系半導体素子 |
| WO2013069729A1 (ja) * | 2011-11-09 | 2013-05-16 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
| WO2013188574A2 (en) * | 2012-06-14 | 2013-12-19 | Tivra Corporation | Multilayer substrate structure and method and system of manufacturing the same |
| JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| JP5965338B2 (ja) * | 2012-07-17 | 2016-08-03 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 |
| SG11201505225TA (en) * | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
| JP5343224B1 (ja) | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
| CN103117226B (zh) * | 2013-02-04 | 2015-07-01 | 青岛大学 | 一种合金氧化物薄膜晶体管的制备方法 |
| JP5397794B1 (ja) * | 2013-06-04 | 2014-01-22 | Ｒｏｃａ株式会社 | 酸化物結晶薄膜の製造方法 |
| JP5397795B1 (ja) * | 2013-06-21 | 2014-01-22 | Ｒｏｃａ株式会社 | 半導体装置及びその製造方法、結晶及びその製造方法 |
| US10109707B2 (en) * | 2014-03-31 | 2018-10-23 | Flosfia Inc. | Crystalline multilayer oxide thin films structure in semiconductor device |
| US9379190B2 (en) * | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
-
2014
- 2014-12-19 US US14/577,986 patent/US9379190B2/en active Active
- 2014-12-19 EP EP14199100.0A patent/EP2942803B1/en active Active
-
2015
- 2015-05-07 JP JP2015095288A patent/JP6557899B2/ja active Active
- 2015-05-08 CN CN201510232391.4A patent/CN105097957A/zh active Pending
- 2015-05-08 CN CN201910353479.XA patent/CN110047907B/zh active Active
- 2015-05-08 CN CN201910915606.0A patent/CN110620145B/zh active Active
- 2015-05-08 TW TW104114709A patent/TWI607511B/zh active
-
2019
- 2019-03-20 JP JP2019053236A patent/JP6893625B2/ja active Active
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