CN105097957A - 结晶性层叠结构体、半导体装置 - Google Patents

结晶性层叠结构体、半导体装置 Download PDF

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Publication number
CN105097957A
CN105097957A CN201510232391.4A CN201510232391A CN105097957A CN 105097957 A CN105097957 A CN 105097957A CN 201510232391 A CN201510232391 A CN 201510232391A CN 105097957 A CN105097957 A CN 105097957A
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oxide semiconductor
crystalline
thin film
semiconductor layer
semiconductor device
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Chinese (zh)
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人罗俊实
织田真也
高塚章夫
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Flosfia Inc
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Flosfia Inc
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Priority to CN201910915606.0A priority Critical patent/CN110620145B/zh
Priority to CN201910353479.XA priority patent/CN110047907B/zh
Publication of CN105097957A publication Critical patent/CN105097957A/zh
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    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201510232391.4A 2014-05-08 2015-05-08 结晶性层叠结构体、半导体装置 Pending CN105097957A (zh)

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CN201910915606.0A CN110620145B (zh) 2014-05-08 2015-05-08 结晶性层叠结构体、半导体装置
CN201910353479.XA CN110047907B (zh) 2014-05-08 2015-05-08 结晶性层叠结构体、半导体装置

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JP2014-097244 2014-05-08
JP2014097244 2014-05-08

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US (1) US9379190B2 (https=)
EP (1) EP2942803B1 (https=)
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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068773A (zh) * 2015-12-18 2017-08-18 Flosfia株式会社 半导体装置
CN107799584A (zh) * 2016-08-31 2018-03-13 流慧株式会社 结晶性氧化物半导体膜、半导体装置及半导体系统
CN107895742A (zh) * 2016-10-03 2018-04-10 流慧株式会社 半导体装置以及包括半导体装置的半导体系统
CN108899359A (zh) * 2014-07-22 2018-11-27 Flosfia 株式会社 结晶性半导体膜和板状体以及半导体装置
CN109107797A (zh) * 2017-06-23 2019-01-01 丰田自动车株式会社 成膜装置
CN109423691A (zh) * 2017-08-21 2019-03-05 流慧株式会社 晶体、结晶膜、包括结晶膜的半导体装置和用于制造结晶膜的方法
CN109478571A (zh) * 2016-07-26 2019-03-15 三菱电机株式会社 半导体装置及半导体装置的制造方法
CN109952392A (zh) * 2016-11-07 2019-06-28 株式会社Flosfia 结晶性氧化物半导体膜及半导体装置
CN110326115A (zh) * 2017-02-28 2019-10-11 株式会社田村制作所 肖特基势垒二极管
CN110724935A (zh) * 2018-07-17 2020-01-24 丰田自动车株式会社 成膜方法和半导体装置的制造方法
CN110724939A (zh) * 2018-07-17 2020-01-24 丰田自动车株式会社 成膜方法和半导体装置的制造方法
CN110752159A (zh) * 2019-10-28 2020-02-04 中国科学技术大学 对氧化镓材料退火的方法
CN112424947A (zh) * 2018-07-12 2021-02-26 株式会社Flosfia 半导体装置及包含半导体装置的半导体系统
CN113113482A (zh) * 2020-01-10 2021-07-13 株式会社Flosfia 晶体、半导体元件、半导体装置及半导体系统
CN114302982A (zh) * 2019-08-27 2022-04-08 信越化学工业株式会社 层叠结构体及层叠结构体的制造方法
CN114747020A (zh) * 2019-11-29 2022-07-12 株式会社Flosfia 半导体装置及半导体系统
US11758745B2 (en) 2019-04-18 2023-09-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay and semiconductor device
TWI887353B (zh) * 2020-02-07 2025-06-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件、半導體裝置及半導體系統

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US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
EP3783662B1 (en) * 2014-09-02 2025-03-12 Flosfia Inc. Laminated structure and method for manufacturing same, semiconductor device, and crystalline film
JP6906217B2 (ja) * 2015-12-18 2021-07-21 株式会社Flosfia 半導体装置
JP2017128492A (ja) * 2016-01-15 2017-07-27 株式会社Flosfia 結晶性酸化物膜
US10158029B2 (en) * 2016-02-23 2018-12-18 Analog Devices, Inc. Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
JP6705962B2 (ja) * 2016-06-03 2020-06-03 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成長方法及び結晶積層構造体
JP6932904B2 (ja) * 2016-08-24 2021-09-08 株式会社Flosfia 半導体装置
JP6951715B2 (ja) 2016-09-15 2021-10-20 株式会社Flosfia 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法
JP2018067672A (ja) 2016-10-21 2018-04-26 株式会社ブイ・テクノロジー 酸化物半導体装置及びその製造方法
JP7116409B2 (ja) * 2017-02-27 2022-08-10 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
CN107293511B (zh) * 2017-07-05 2019-11-12 京东方科技集团股份有限公司 一种膜层退火设备及退火方法
CN107464844A (zh) * 2017-07-20 2017-12-12 中国电子科技集团公司第十三研究所 氧化镓场效应晶体管的制备方法
JP7065440B2 (ja) * 2017-09-04 2022-05-12 株式会社Flosfia 半導体装置の製造方法および半導体装置
GB2601276B (en) * 2017-12-11 2022-09-28 Pragmatic Printing Ltd Schottky diode
GB2569196B (en) 2017-12-11 2022-04-20 Pragmatic Printing Ltd Schottky diode
CN108493234A (zh) * 2018-05-10 2018-09-04 广东省半导体产业技术研究院 一种鳍式沟道的氧化镓基垂直场效应晶体管及其制备方法
TW202006945A (zh) * 2018-07-12 2020-02-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
TWI897850B (zh) * 2018-07-12 2025-09-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
TWI879736B (zh) * 2018-07-12 2025-04-11 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
TWI777078B (zh) * 2018-08-01 2022-09-11 日本商出光興產股份有限公司 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器
JP6857641B2 (ja) 2018-12-19 2021-04-14 信越化学工業株式会社 成膜方法及び成膜装置
JP7315136B2 (ja) * 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物半導体
DE112019007009B4 (de) * 2019-03-13 2023-04-27 Mitsubishi Electric Corporation Halbleitereinheit
US11088242B2 (en) 2019-03-29 2021-08-10 Flosfia Inc. Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device
JP7409790B2 (ja) * 2019-06-20 2024-01-09 信越化学工業株式会社 酸化物半導体膜及び半導体装置
CN114402437A (zh) * 2019-07-16 2022-04-26 株式会社Flosfia 层叠结构体和半导体装置
CN110571152A (zh) * 2019-08-14 2019-12-13 青岛佳恩半导体有限公司 一种igbt背面电极缓冲层的制备方法
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CN111106167A (zh) * 2019-11-27 2020-05-05 太原理工大学 一种择优取向的Ga2O3和SnO2混相膜基传感器的制备方法
EP4068389A4 (en) * 2019-11-29 2024-01-03 Flosfia Inc. Semiconductor device and semiconductor system
KR102812668B1 (ko) * 2020-01-10 2025-05-23 가부시키가이샤 플로스피아 도전성 금속 산화막, 반도체 소자 및 반도체 장치
JP7478334B2 (ja) * 2020-01-10 2024-05-07 株式会社Flosfia 半導体素子および半導体装置
TWI879858B (zh) * 2020-01-10 2025-04-11 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置及半導體系統
US20230253203A1 (en) * 2020-06-29 2023-08-10 Shin-Etsu Chemical Co., Ltd. Method for producing doping raw-material solution for film formation, method for producing laminate, doping raw-material solution for film formation, and semiconductor film
JPWO2022009970A1 (https=) * 2020-07-10 2022-01-13
KR20230053592A (ko) * 2020-08-20 2023-04-21 신에쓰 가가꾸 고교 가부시끼가이샤 성막방법 및 원료용액
CN112103175A (zh) * 2020-08-28 2020-12-18 上海大学 n型氧化镓薄膜的掺杂工艺制备的钒掺杂n型氧化镓薄膜
JP7469201B2 (ja) 2020-09-18 2024-04-16 株式会社デンソー 半導体装置とその製造方法
KR102394975B1 (ko) * 2020-10-22 2022-05-09 경북대학교 산학협력단 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
CN117441234A (zh) * 2021-04-26 2024-01-23 株式会社Flosfia 半导体装置
JP7572685B2 (ja) * 2021-07-07 2024-10-24 株式会社Tmeic エッチング方法
US12532530B2 (en) * 2021-09-09 2026-01-20 The Regents Of The University Of Michigan Doped aluminum-alloyed gallium oxide and ohmic contacts

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102239549A (zh) * 2008-12-08 2011-11-09 住友化学株式会社 半导体装置，半导体装置的制造方法，半导体基板，和半导体基板的制造方法
US20120061663A1 (en) * 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013035843A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子
WO2014050793A1 (ja) * 2012-09-28 2014-04-03 Ｒｏｃａ株式会社 半導体装置又は結晶、および、半導体装置又は結晶の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060614B2 (en) * 2000-07-28 2006-06-13 Tokyo Electron Limited Method for forming film
CN101558504A (zh) * 2006-10-17 2009-10-14 住友化学株式会社 热电转换材料、其制造方法、热电转换元件以及提高热电转换材料强度的方法
JP5142257B2 (ja) 2007-09-27 2013-02-13 独立行政法人産業技術総合研究所 不純物イオン注入層の電気的活性化方法
KR101895398B1 (ko) * 2011-04-28 2018-10-25 삼성전자 주식회사 산화물 층의 형성 방법 및 이를 포함하는 반도체 소자의 제조 방법
US9466618B2 (en) * 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
JP6013685B2 (ja) * 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5948581B2 (ja) 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
WO2013069729A1 (ja) * 2011-11-09 2013-05-16 株式会社タムラ製作所 半導体素子及びその製造方法
WO2013188574A2 (en) * 2012-06-14 2013-12-19 Tivra Corporation Multilayer substrate structure and method and system of manufacturing the same
JP5972065B2 (ja) * 2012-06-20 2016-08-17 富士フイルム株式会社 薄膜トランジスタの製造方法
JP5965338B2 (ja) * 2012-07-17 2016-08-03 出光興産株式会社 スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法
SG11201505225TA (en) * 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
CN103117226B (zh) * 2013-02-04 2015-07-01 青岛大学 一种合金氧化物薄膜晶体管的制备方法
JP5397794B1 (ja) * 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法
JP5397795B1 (ja) * 2013-06-21 2014-01-22 Ｒｏｃａ株式会社 半導体装置及びその製造方法、結晶及びその製造方法
US10109707B2 (en) * 2014-03-31 2018-10-23 Flosfia Inc. Crystalline multilayer oxide thin films structure in semiconductor device
US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102239549A (zh) * 2008-12-08 2011-11-09 住友化学株式会社 半导体装置，半导体装置的制造方法，半导体基板，和半导体基板的制造方法
US20120061663A1 (en) * 2010-09-13 2012-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2013035843A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子
WO2014050793A1 (ja) * 2012-09-28 2014-04-03 Ｒｏｃａ株式会社 半導体装置又は結晶、および、半導体装置又は結晶の製造方法

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110828536A (zh) * 2014-07-22 2020-02-21 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
CN110828553A (zh) * 2014-07-22 2020-02-21 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
CN110804728A (zh) * 2014-07-22 2020-02-18 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
CN108899359A (zh) * 2014-07-22 2018-11-27 Flosfia 株式会社 结晶性半导体膜和板状体以及半导体装置
CN110828552B (zh) * 2014-07-22 2024-04-12 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
CN110777359A (zh) * 2014-07-22 2020-02-11 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
CN110828552A (zh) * 2014-07-22 2020-02-21 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
US11069781B2 (en) 2014-07-22 2021-07-20 Flosfia Inc. Crystalline semiconductor film, plate-like body and semiconductor device
CN107068773A (zh) * 2015-12-18 2017-08-18 Flosfia株式会社 半导体装置
TWI667792B (zh) * 2015-12-18 2019-08-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
TWI660505B (zh) * 2015-12-18 2019-05-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
CN107068773B (zh) * 2015-12-18 2021-06-01 株式会社Flosfia 半导体装置
TWI686952B (zh) * 2015-12-18 2020-03-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
CN109478571A (zh) * 2016-07-26 2019-03-15 三菱电机株式会社 半导体装置及半导体装置的制造方法
CN107799584B (zh) * 2016-08-31 2022-08-26 株式会社Flosfia 结晶性氧化物半导体膜、半导体装置及半导体系统
CN107799584A (zh) * 2016-08-31 2018-03-13 流慧株式会社 结晶性氧化物半导体膜、半导体装置及半导体系统
CN107895742A (zh) * 2016-10-03 2018-04-10 流慧株式会社 半导体装置以及包括半导体装置的半导体系统
CN109952392A (zh) * 2016-11-07 2019-06-28 株式会社Flosfia 结晶性氧化物半导体膜及半导体装置
CN110326115A (zh) * 2017-02-28 2019-10-11 株式会社田村制作所 肖特基势垒二极管
CN110326115B (zh) * 2017-02-28 2022-09-09 株式会社田村制作所 肖特基势垒二极管
CN109107797A (zh) * 2017-06-23 2019-01-01 丰田自动车株式会社 成膜装置
CN109423691A (zh) * 2017-08-21 2019-03-05 流慧株式会社 晶体、结晶膜、包括结晶膜的半导体装置和用于制造结晶膜的方法
CN109423691B (zh) * 2017-08-21 2022-09-23 株式会社Flosfia 晶体、结晶膜、包括结晶膜的半导体装置和用于制造结晶膜的方法
CN112424947A (zh) * 2018-07-12 2021-02-26 株式会社Flosfia 半导体装置及包含半导体装置的半导体系统
CN110724939A (zh) * 2018-07-17 2020-01-24 丰田自动车株式会社 成膜方法和半导体装置的制造方法
CN110724935A (zh) * 2018-07-17 2020-01-24 丰田自动车株式会社 成膜方法和半导体装置的制造方法
US11758745B2 (en) 2019-04-18 2023-09-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay and semiconductor device
CN114302982A (zh) * 2019-08-27 2022-04-08 信越化学工业株式会社 层叠结构体及层叠结构体的制造方法
CN110752159B (zh) * 2019-10-28 2023-08-29 中国科学技术大学 对氧化镓材料退火的方法
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CN113113482A (zh) * 2020-01-10 2021-07-13 株式会社Flosfia 晶体、半导体元件、半导体装置及半导体系统
CN113113482B (zh) * 2020-01-10 2025-12-09 株式会社Flosfia 晶体、半导体元件、半导体装置及半导体系统
TWI887353B (zh) * 2020-02-07 2025-06-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件、半導體裝置及半導體系統

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