JP2014528169A - 局所磁場を生成する基板支持体アセンブリの構成要素 - Google Patents
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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Abstract
Description
表面上の1μm厚の酸化シリコン膜を約400nmの深さまでエッチングされるシリコンウエハが、供給トレースおよび帰還トレースが非平面状である図7の構成と同様の2つの電流ループを備えたエッジリングによって囲まれる。エッチングが、フルオロカーボンエッチングガスを用いて実行されうる。基板は、プラズマエッチング真空チャンバ内にロードされ、約200nmの深さまで部分エッチングされ、その後チャンバから取り出される。干渉法技術を用いて、部分エッチング前後に基板上の膜厚プロファイルを測定することによってエッチング速度の不均一性を決定する。これらの測定値から、アルゴリズムを用いて、エッチング速度パターンを生成する。パターンの分析後、方位角方向のエッチング速度の不均一性に対して実行される補正および/または調整を決定するために用いられるパラメータを決定する。部分エッチングは、19.2nm(10%)の3σ標準偏差で、192.4nmの平均深さまで膜をエッチングしたと決定される。全体の最大値および最小値の間の差は、31.9nm(16.6%)である。エッチング速度パターンの分析について、図13に示す。基板70上の領域190(黒)が、領域180(灰色)よりも速いエッチング速度でエッチングされることが示されている。
エッチング速度のばらつきを補償するための処理スキームにおいて:
a.ウエハが部分エッチングされ、エッチング速度の不均一性が測定される;
b.(過去の知識に基づいて)ウエハ上方のプラズマに磁場パターンを印加する;
c.別のウエハをエッチングして、印加磁場が既知であるので、印加磁場パターンに対するエッチングパターンの感受性を決定する;
d.最適磁場パターンを決定するために、任意選択的に工程a〜cを繰り返す。
後続ウエハの厚さのばらつきを補償する処理スキームにおいて:
a.後続ウエハの厚さのばらつきを測定する;
b.(過去の知識に基づいて)磁場パターンを印加する;
c.ウエハをエッチングして、印加磁場が既知であるので、印加磁場パターンに対するエッチングパターンの感受性を決定する;
d.任意選択的に工程a〜cを繰り返し、必要に応じて印加磁場パターンを調整する。
Claims (20)
- プラズマ処理を受ける個々の半導体基板を支持するための基板支持体アセンブリの構成要素であって、
前記プラズマ処理中に前記半導体基板を支持することができる基板支持体、および/または、前記半導体基板を囲むエッジリングと、
前記基板支持体および/または前記エッジリングに組み込まれた複数の電流ループと、
を備え、
前記電流ループは、横方向に離間され、前記基板支持体または前記エッジリングの周囲の半分未満に伸びており、前記電流ループの各々は、前記基板のプラズマ処理中に前記基板支持体に支持された基板の上方に、20ガウス未満の磁場強度の局所DC磁場を誘導するよう動作可能である、構成要素。 - 請求項1に記載の構成要素であって、前記基板支持体は、ベースプレートと、前記ベースプレート上方の断熱層と、前記断熱層上方の静電チャック電極を埋め込まれたセラミックプレートと、を備え、
前記電流ループは、前記半導体基板の上面と平行な平面内に実質的に存在するように、前記ベースプレートまたは前記セラミックプレート内に埋め込まれている、構成要素。 - 請求項1に記載の構成要素であって、前記電流ループは、前記半導体基板の上面と平行な平面内に実質的に存在するように、前記エッジリング内に埋め込まれている、構成要素。
- 請求項1に記載の構成要素であって、200個以下の同じサイズで円形の電流ループが、前記基板支持体または前記エッジリング内に埋め込まれている、構成要素。
- 請求項1に記載の構成要素であって、前記電流ループの各々は、円形、半円形、楕円形、半楕円形、正方形、長方形、台形、三角形、または、多角形の形状を有する、構成要素。
- 請求項1に記載の構成要素であって、前記複数の電流ループに含まれる各電流ループは、約0.5〜10mmの直径を有するループに形成されたワイヤである、構成要素。
- 請求項1に記載の構成要素であって、前記複数の電流ループに含まれる各電流ループの周囲は、隣接する電流ループから横方向にオフセットされている、構成要素。
- 請求項1に記載の構成要素を組み込んだプラズマ処理チャンバであって、前記基板支持体は、前記基板支持体にわたって横方向に分布する複数のヒータを有してクリティカルディメンション(CD)制御のために空間的温度プロファイルを調節するよう動作可能であるヒータ層を備え、前記基板支持体は、前記基板支持体にわたって横方向に分布する少なくとも9つの電流ループを備え、前記半導体基板の処理中に局所的な不均一性を補償するよう動作可能である、プラズマ処理チャンバ。
- 請求項8に記載のプラズマ処理チャンバであって、前記プラズマ処理チャンバは、プラズマエッチングチャンバである、プラズマ処理チャンバ。
- 請求項8に記載のプラズマ処理チャンバであって、前記電流ループは、同じまたは異なる電力レベルのDC電力を同じまたは異なる時に供給されうるように、コントローラによって制御された1または複数のDC電源に接続され、前記電流ループを流れる電流は、同じ方向または異なる方向である、プラズマ処理チャンバ。
- 請求項8に記載のプラズマ処理チャンバ内で処理を受ける半導体基板のプラズマ処理中に磁場パターンを制御および/または調整する方法であって、
a)前記基板支持体上に半導体基板を支持する工程と、
b)前記半導体基板をプラズマ処理する工程と、
c)処理の局所的な不均一性を補償するために、前記電流ループの少なくとも1つにDC電力を供給して、前記半導体基板の上方の領域に局所DC磁場を生成する工程と、
を備える、方法。 - 請求項11に記載の方法であって、前記電流ループは、異なる大きさのDC電力を供給され、前記電流ループの各々に時計回り方向の電流が流れる、方法。
- 請求項11に記載の方法であって、前記電流ループは、異なる大きさのDC電力を供給され、前記電流ループのいくつかに異なる方向の電流が流れる、方法。
- 請求項11に記載の方法であって、前記電流ループの各々は、前記半導体基板の上方に、1ガウス未満の磁場強度を有する局所磁場を生成する、方法。
- 請求項14に記載の方法であって、前記磁場強度は、0.5ガウス未満である、方法。
- 請求項11に記載の方法であって、前記基板支持体は、少なくとも2つの電流ループを有するエッジリングによって囲まれ、前記電流ループの各々は、前記エッジリングの反対側に配置される、方法。
- 請求項16に記載の方法であって、前記エッジリングは、少なくとも4つの電流ループを有し、前記電流ループの各々は、前記電流ループの内の別の1つと直径方向反対側に配置され、前記電流ループの各々は、円形、半円形、楕円形、半楕円形、正方形、長方形、台形、三角形、または、多角形の形状を有する、方法。
- 請求項11に記載の方法であって、前記プラズマ処理は、プラズマエッチングであり、前記方法は、さらに、工程a)およびb)の後、かつ、工程c)の前に、
前記半導体基板を前記チャンバから取り出す工程と、
前記半導体基板上のエッチング速度パターンにおけるエッチング速度の不均一性を検出する工程と、
膜厚によって引き起こされたエッチング速度の不均一性、エッチングチャンバによって引き起こされたエッチング速度の不均一性、または、プラズマによって引き起こされたエッチング速度の不均一性を補償するように、工程c)を修正する工程と、
を備える、方法。 - 請求項11に記載の方法であって、前記DC電力は、多重電力スキームを含む少なくとも1つのDC電源から供給される、方法。
- 請求項11に記載の方法であって、前記基板支持体は、少なくとも約200mm、少なくとも約300mm、または、少なくとも約450mmの直径を有する基板を支持するよう適合される、方法。
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PCT/US2012/053386 WO2013039718A1 (en) | 2011-09-16 | 2012-08-31 | A component of a substrate support assembly producing localized magnetic fields |
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Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
DK2251453T3 (da) | 2009-05-13 | 2014-07-07 | Sio2 Medical Products Inc | Beholderholder |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
SG180882A1 (en) | 2009-12-15 | 2012-07-30 | Lam Res Corp | Adjusting substrate temperature to improve cd uniformity |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US8546732B2 (en) | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9307578B2 (en) | 2011-08-17 | 2016-04-05 | Lam Research Corporation | System and method for monitoring temperatures of and controlling multiplexed heater array |
US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
CA2855353C (en) | 2011-11-11 | 2021-01-19 | Sio2 Medical Products, Inc. | Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus |
CA2890066C (en) | 2012-11-01 | 2021-11-09 | Sio2 Medical Products, Inc. | Coating inspection method |
WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
WO2014085346A1 (en) | 2012-11-30 | 2014-06-05 | Sio2 Medical Products, Inc. | Hollow body with inside coating |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
US9681497B2 (en) * | 2013-03-12 | 2017-06-13 | Applied Materials, Inc. | Multi zone heating and cooling ESC for plasma process chamber |
US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
CN107507799B (zh) * | 2013-11-06 | 2021-01-26 | 应用材料公司 | 溶胶凝胶涂布的支撑环 |
US9435692B2 (en) | 2014-02-05 | 2016-09-06 | Lam Research Corporation | Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output |
EP3122917B1 (en) | 2014-03-28 | 2020-05-06 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US9543171B2 (en) | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
SG10202002601QA (en) | 2014-10-17 | 2020-05-28 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
CN108138316A (zh) | 2015-08-18 | 2018-06-08 | Sio2医药产品公司 | 具有低氧气传输速率的药物和其他包装 |
US10770309B2 (en) * | 2015-12-30 | 2020-09-08 | Mattson Technology, Inc. | Features for improving process uniformity in a millisecond anneal system |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11069553B2 (en) | 2016-07-07 | 2021-07-20 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
US10777442B2 (en) * | 2016-11-18 | 2020-09-15 | Applied Materials, Inc. | Hybrid substrate carrier |
US10910195B2 (en) | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
US10741425B2 (en) | 2017-02-22 | 2020-08-11 | Lam Research Corporation | Helium plug design to reduce arcing |
US10460978B2 (en) | 2017-03-08 | 2019-10-29 | Lam Research Corporation | Boltless substrate support assembly |
US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
US11078570B2 (en) * | 2018-06-29 | 2021-08-03 | Lam Research Corporation | Azimuthal critical dimension non-uniformity for double patterning process |
CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
US20210225681A1 (en) * | 2018-10-30 | 2021-07-22 | Ulvac, Inc. | Vacuum processing apparatus |
TW202238175A (zh) * | 2019-11-05 | 2022-10-01 | 荷蘭商Asml荷蘭公司 | 用於高速應用之大主動區域偵測器封裝 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677146A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | プラズマ処理装置 |
JPH0987839A (ja) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | 薄膜作製方法及び薄膜作製装置 |
JPH11283926A (ja) * | 1998-01-29 | 1999-10-15 | Anelva Corp | プラズマ処理装置 |
JP2002313535A (ja) * | 2001-04-13 | 2002-10-25 | Sumitomo Electric Ind Ltd | 被処理物保持体 |
JP2006509365A (ja) * | 2002-12-06 | 2006-03-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プラズマ・エッチング中に帯電粒子からウェハを遮蔽する装置および方法 |
JP2010225941A (ja) * | 2009-03-24 | 2010-10-07 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2011018684A (ja) * | 2009-07-07 | 2011-01-27 | Tokyo Electron Ltd | プラズマ処理用基板載置台、プラズマ処理方法、及びプラズマ処理装置 |
US20110092072A1 (en) * | 2009-10-21 | 2011-04-21 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
Family Cites Families (190)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US794064A (en) | 1904-03-28 | 1905-07-04 | Hubert Lawrence White | Fence-wire pliers. |
US1816888A (en) * | 1929-06-28 | 1931-08-04 | Arter Grinding Machine Company | Magnetic chuck and circuits therefor |
US3440883A (en) | 1966-12-01 | 1969-04-29 | Monsanto Co | Electronic semiconductor thermometer |
IT1052903B (it) | 1975-02-24 | 1981-08-31 | Kendall & Co | Raccordo perfezionato per collegare una siringa ad un catetere |
JPS5546346A (en) | 1978-09-27 | 1980-04-01 | Tokyo Electric Co Ltd | Roaster |
JPS601918B2 (ja) | 1980-04-26 | 1985-01-18 | ライオン株式会社 | 再汚染の少ない無燐洗剤組成物 |
JPS601918A (ja) | 1983-06-17 | 1985-01-08 | Fuji Electric Co Ltd | マトリツクス形選択回路 |
JPS6077146A (ja) * | 1983-09-30 | 1985-05-01 | Showa Highpolymer Co Ltd | 釉薬組成物 |
US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
JPS621176A (ja) | 1985-06-26 | 1987-01-07 | Hitachi Ltd | ヘツド支持装置 |
JPH0215174A (ja) * | 1988-07-01 | 1990-01-18 | Canon Inc | マイクロ波プラズマcvd装置 |
US5059770A (en) | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
JPH0610391B2 (ja) | 1989-11-17 | 1994-02-09 | 株式会社ナブコ | プラグドアのガイド装置 |
JP2501948B2 (ja) * | 1990-10-26 | 1996-05-29 | 三菱電機株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US5536918A (en) | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
US5184398A (en) * | 1991-08-30 | 1993-02-09 | Texas Instruments Incorporated | In-situ real-time sheet resistance measurement method |
FR2682253A1 (fr) | 1991-10-07 | 1993-04-09 | Commissariat Energie Atomique | Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole. |
US5275683A (en) * | 1991-10-24 | 1994-01-04 | Tokyo Electron Limited | Mount for supporting substrates and plasma processing apparatus using the same |
US5255520A (en) | 1991-12-20 | 1993-10-26 | Refir Technologies | Advanced thermoelectric heating and cooling system |
US5231334A (en) * | 1992-04-15 | 1993-07-27 | Texas Instruments Incorporated | Plasma source and method of manufacturing |
JP3440475B2 (ja) | 1992-06-29 | 2003-08-25 | アイシン精機株式会社 | 人体局部洗浄装置 |
US5414245A (en) | 1992-08-03 | 1995-05-09 | Hewlett-Packard Corporation | Thermal-ink heater array using rectifying material |
DE4231702C2 (de) | 1992-09-22 | 1995-05-24 | Litef Gmbh | Thermoelektrische, beheizbare Kühlkammer |
US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
KR100290748B1 (ko) | 1993-01-29 | 2001-06-01 | 히가시 데쓰로 | 플라즈마 처리장치 |
US5504471A (en) | 1993-09-16 | 1996-04-02 | Hewlett-Packard Company | Passively-multiplexed resistor array |
JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
JPH08246170A (ja) * | 1995-03-06 | 1996-09-24 | Ricoh Opt Ind Co Ltd | Ecrプラズマエッチング方法および装置 |
JP3257328B2 (ja) | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
US5664166A (en) | 1995-05-10 | 1997-09-02 | 3Comcorporation | System for generating a variable signal in response to a toggle signal selectively delayed using a clock edge and time delay measured from the clock edge |
US5874014A (en) * | 1995-06-07 | 1999-02-23 | Berkeley Scholars, Inc. | Durable plasma treatment apparatus and method |
US5667622A (en) | 1995-08-25 | 1997-09-16 | Siemens Aktiengesellschaft | In-situ wafer temperature control apparatus for single wafer tools |
JPH09213781A (ja) | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5740016A (en) | 1996-03-29 | 1998-04-14 | Lam Research Corporation | Solid state temperature controlled substrate holder |
US5751537A (en) * | 1996-05-02 | 1998-05-12 | Applied Materials, Inc. | Multielectrode electrostatic chuck with fuses |
US6055150A (en) * | 1996-05-02 | 2000-04-25 | Applied Materials, Inc. | Multi-electrode electrostatic chuck having fuses in hollow cavities |
US5745332A (en) * | 1996-05-08 | 1998-04-28 | Applied Materials, Inc. | Monopolar electrostatic chuck having an electrode in contact with a workpiece |
US5793192A (en) * | 1996-06-28 | 1998-08-11 | Lam Research Corporation | Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system |
WO1998005060A1 (en) | 1996-07-31 | 1998-02-05 | The Board Of Trustees Of The Leland Stanford Junior University | Multizone bake/chill thermal cycling module |
KR200159921Y1 (ko) | 1996-11-23 | 1999-11-01 | 이세원 | 리프터의 업/다운 제어회로 |
US5886864A (en) * | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
JP3954177B2 (ja) * | 1997-01-29 | 2007-08-08 | 日本碍子株式会社 | 金属部材とセラミックス部材との接合構造およびその製造方法 |
US5994675A (en) | 1997-03-07 | 1999-11-30 | Semitool, Inc. | Semiconductor processing furnace heating control system |
JP3526184B2 (ja) | 1997-03-17 | 2004-05-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
US6091060A (en) | 1997-12-31 | 2000-07-18 | Temptronic Corporation | Power and control system for a workpiece chuck |
US6222161B1 (en) | 1998-01-12 | 2001-04-24 | Tokyo Electron Limited | Heat treatment apparatus |
US6216632B1 (en) | 1998-01-29 | 2001-04-17 | Anelva Corporation | Plasma processing system |
US6342997B1 (en) | 1998-02-11 | 2002-01-29 | Therm-O-Disc, Incorporated | High sensitivity diode temperature sensor with adjustable current source |
US5886866A (en) | 1998-07-06 | 1999-03-23 | Applied Materials, Inc. | Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing |
GB2387023B (en) * | 1998-12-17 | 2003-12-03 | Trikon Holdings Ltd | Inductive coil assembly |
US6028286A (en) * | 1998-12-30 | 2000-02-22 | Lam Research Corporation | Method for igniting a plasma inside a plasma processing reactor |
JP3892609B2 (ja) | 1999-02-16 | 2007-03-14 | 株式会社東芝 | ホットプレートおよび半導体装置の製造方法 |
DE19907497C2 (de) | 1999-02-22 | 2003-05-28 | Steag Hamatech Ag | Vorrichtung und Verfahren zur Wärmebehandlung von Substraten |
US6353209B1 (en) | 1999-03-04 | 2002-03-05 | Board Of Trustees Of The Leland Stanford Junior University | Temperature processing module |
US6523493B1 (en) | 2000-08-01 | 2003-02-25 | Tokyo Electron Limited | Ring-shaped high-density plasma source and method |
JP4249843B2 (ja) * | 1999-04-12 | 2009-04-08 | 憲一 高木 | プラズマ処理装置 |
US6431112B1 (en) * | 1999-06-15 | 2002-08-13 | Tokyo Electron Limited | Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck |
JP2001035907A (ja) * | 1999-07-26 | 2001-02-09 | Ulvac Japan Ltd | 吸着装置 |
US6100506A (en) | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
US6175175B1 (en) | 1999-09-10 | 2001-01-16 | The University Of Chicago | Levitation pressure and friction losses in superconducting bearings |
US6740853B1 (en) | 1999-09-29 | 2004-05-25 | Tokyo Electron Limited | Multi-zone resistance heater |
WO2001031978A1 (fr) | 1999-10-22 | 2001-05-03 | Ibiden Co., Ltd. | Plaque chauffante en ceramique |
JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
US6271459B1 (en) | 2000-04-26 | 2001-08-07 | Wafermasters, Inc. | Heat management in wafer processing equipment using thermoelectric device |
US6332710B1 (en) | 2000-07-24 | 2001-12-25 | National Semiconductor Corporation | Multi-channel remote diode temperature sensor |
US7430984B2 (en) | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
US6403403B1 (en) | 2000-09-12 | 2002-06-11 | The Aerospace Corporation | Diode isolated thin film fuel cell array addressing method |
US7309997B1 (en) * | 2000-09-15 | 2007-12-18 | Varian Semiconductor Equipment Associates, Inc. | Monitor system and method for semiconductor processes |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US7075031B2 (en) | 2000-10-25 | 2006-07-11 | Tokyo Electron Limited | Method of and structure for controlling electrode temperature |
US6501052B2 (en) | 2000-12-22 | 2002-12-31 | Chrysalis Technologies Incorporated | Aerosol generator having multiple heating zones and methods of use thereof |
AU2002240261A1 (en) | 2001-03-02 | 2002-09-19 | Tokyo Electron Limited | Method and apparatus for active temperature control of susceptors |
US6746616B1 (en) | 2001-03-27 | 2004-06-08 | Advanced Micro Devices, Inc. | Method and apparatus for providing etch uniformity using zoned temperature control |
US6741446B2 (en) | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
JP3582518B2 (ja) | 2001-04-18 | 2004-10-27 | 住友電気工業株式会社 | 抵抗発熱体回路パターンとそれを用いた基板処理装置 |
WO2002089531A1 (en) | 2001-04-30 | 2002-11-07 | Lam Research, Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US20050211385A1 (en) | 2001-04-30 | 2005-09-29 | Lam Research Corporation, A Delaware Corporation | Method and apparatus for controlling spatial temperature distribution |
US7161121B1 (en) | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6795292B2 (en) | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
KR100416599B1 (ko) | 2001-05-31 | 2004-02-05 | 삼성전자주식회사 | 집적도와 독출동작 속도를 향상시키고 전력소모를감소시킬 수 있는 메탈 프로그래머블 롬의 메모리셀 구조 |
US20060191637A1 (en) | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
US6483690B1 (en) | 2001-06-28 | 2002-11-19 | Lam Research Corporation | Ceramic electrostatic chuck assembly and method of making |
JP3897563B2 (ja) | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
US6739138B2 (en) | 2001-11-26 | 2004-05-25 | Innovations Inc. | Thermoelectric modules and a heating and cooling apparatus incorporating same |
KR100455350B1 (ko) * | 2002-02-08 | 2004-11-06 | 권광호 | 유도 결합형 플라즈마 발생 장치 및 방법 |
US6835290B2 (en) | 2002-02-13 | 2004-12-28 | Seagate Technology Llc | System and method for controlling thin film defects |
US6921724B2 (en) | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
US6612673B1 (en) | 2002-04-29 | 2003-09-02 | Hewlett-Packard Development Company, L.P. | System and method for predicting dynamic thermal conditions of an inkjet printing system |
JP3808407B2 (ja) | 2002-07-05 | 2006-08-09 | 住友大阪セメント株式会社 | 電極内蔵型サセプタ及びその製造方法 |
JP4403073B2 (ja) | 2002-07-11 | 2010-01-20 | テンプトロニック コーポレイション | 熱電気モジュールのための隙間を作る層間スペーサを有する熱制御アセンブリを備えるワークピースチャック |
US6825681B2 (en) | 2002-07-19 | 2004-11-30 | Delta Design, Inc. | Thermal control of a DUT using a thermal control substrate |
US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
JP3924524B2 (ja) | 2002-10-29 | 2007-06-06 | 京セラ株式会社 | ウエハ加熱装置およびその製造方法 |
US7372001B2 (en) | 2002-12-17 | 2008-05-13 | Nhk Spring Co., Ltd. | Ceramics heater |
US6979805B2 (en) | 2003-01-08 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Fuel-cell resistors and methods |
US6819096B2 (en) * | 2003-01-31 | 2004-11-16 | Advanced Energy Industries, Inc. | Power measurement mechanism for a transformer coupled plasma source |
US20040173469A1 (en) * | 2003-03-04 | 2004-09-09 | Ryujiro Udo | Plasma processing apparatus and method for manufacturing electrostatic chuck |
US6825617B2 (en) | 2003-02-27 | 2004-11-30 | Hitachi High-Technologies Corporation | Semiconductor processing apparatus |
JP2004278551A (ja) | 2003-03-12 | 2004-10-07 | Nsk Ltd | 転がりねじ装置 |
KR100904361B1 (ko) | 2003-03-28 | 2009-06-23 | 도쿄엘렉트론가부시키가이샤 | 기판의 온도제어방법 및 시스템 |
US6989210B2 (en) | 2003-04-23 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Fuel cartridge with thermo-degradable barrier system |
US8974630B2 (en) * | 2003-05-07 | 2015-03-10 | Sungkyunkwan University | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing |
US20050016465A1 (en) * | 2003-07-23 | 2005-01-27 | Applied Materials, Inc. | Electrostatic chuck having electrode with rounded edge |
JP2005048259A (ja) * | 2003-07-31 | 2005-02-24 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
TWI247551B (en) | 2003-08-12 | 2006-01-11 | Ngk Insulators Ltd | Method of manufacturing electrical resistance heating element |
JP2005123286A (ja) | 2003-10-15 | 2005-05-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US8536492B2 (en) | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
KR20050053464A (ko) | 2003-12-01 | 2005-06-08 | 정준호 | 직렬 연결된 2개의 다이오드를 이용한 반도체 기억소자 |
US20100257871A1 (en) | 2003-12-11 | 2010-10-14 | Rama Venkatasubramanian | Thin film thermoelectric devices for power conversion and cooling |
US7250309B2 (en) | 2004-01-09 | 2007-07-31 | Applied Materials, Inc. | Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control |
US6870728B1 (en) | 2004-01-29 | 2005-03-22 | Tdk Corporation | Electrolytic capacitor |
JP4349952B2 (ja) | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | ウェハ支持部材とその製造方法 |
US20050211667A1 (en) * | 2004-03-26 | 2005-09-29 | Lam Research Corporation | Method and apparatus for measurement of thin films and residues on semiconductor substrates |
US7141763B2 (en) | 2004-03-26 | 2006-11-28 | Tokyo Electron Limited | Method and apparatus for rapid temperature change and control |
US7697260B2 (en) | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
JP2005294237A (ja) | 2004-04-05 | 2005-10-20 | Aun:Kk | 面状ヒーター |
JP4281605B2 (ja) | 2004-04-08 | 2009-06-17 | 住友電気工業株式会社 | 半導体加熱装置 |
US7415312B2 (en) | 2004-05-25 | 2008-08-19 | Barnett Jr James R | Process module tuning |
KR20050121913A (ko) | 2004-06-23 | 2005-12-28 | 삼성전자주식회사 | 베이크 장치 |
US7396431B2 (en) | 2004-09-30 | 2008-07-08 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
KR100632544B1 (ko) | 2004-12-15 | 2006-10-09 | 현대자동차주식회사 | 직류변환기의 게이트 드라이버 회로 |
US7475551B2 (en) | 2004-12-23 | 2009-01-13 | Nanocoolers, Inc. | System employing temporal integration of thermoelectric action |
US7632375B2 (en) * | 2004-12-30 | 2009-12-15 | Lam Research Corporation | Electrically enhancing the confinement of plasma |
US20060226123A1 (en) | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Profile control using selective heating |
US20060229854A1 (en) | 2005-04-08 | 2006-10-12 | Caterpillar Inc. | Computer system architecture for probabilistic modeling |
EP1900253B1 (en) | 2005-06-29 | 2013-07-31 | Watlow Electric Manufacturing Company | Smart layered heater surfaces |
JP4667158B2 (ja) | 2005-08-09 | 2011-04-06 | パナソニック株式会社 | ウェーハレベルバーンイン方法 |
US7349647B2 (en) | 2005-08-31 | 2008-03-25 | Kabushiki Kaisha Toshiba | Image forming apparatus |
JP2007081160A (ja) | 2005-09-14 | 2007-03-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4483751B2 (ja) | 2005-09-16 | 2010-06-16 | 株式会社デンソー | 電源逆接続保護回路 |
US20070125762A1 (en) | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US8168050B2 (en) | 2006-07-05 | 2012-05-01 | Momentive Performance Materials Inc. | Electrode pattern for resistance heating element and wafer processing apparatus |
JP4394667B2 (ja) | 2006-08-22 | 2010-01-06 | 日本碍子株式会社 | ヒータ付き静電チャックの製造方法 |
US7701693B2 (en) * | 2006-09-13 | 2010-04-20 | Ngk Insulators, Ltd. | Electrostatic chuck with heater and manufacturing method thereof |
US7723648B2 (en) * | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
US7557328B2 (en) | 2006-09-25 | 2009-07-07 | Tokyo Electron Limited | High rate method for stable temperature control of a substrate |
US7297894B1 (en) | 2006-09-25 | 2007-11-20 | Tokyo Electron Limited | Method for multi-step temperature control of a substrate |
JP5032818B2 (ja) * | 2006-09-29 | 2012-09-26 | 新光電気工業株式会社 | 静電チャック |
JP4850664B2 (ja) | 2006-11-02 | 2012-01-11 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置 |
KR20080058109A (ko) | 2006-12-21 | 2008-06-25 | 동부일렉트로닉스 주식회사 | 웨이퍼 가열장치 및 가열방법 |
US8222574B2 (en) | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US20080197015A1 (en) | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
KR100849069B1 (ko) | 2007-04-20 | 2008-07-30 | 주식회사 하이닉스반도체 | 정전기 방전 보호 장치 |
US8057602B2 (en) | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
US20090000738A1 (en) * | 2007-06-29 | 2009-01-01 | Neil Benjamin | Arrays of inductive elements for minimizing radial non-uniformity in plasma |
US8900405B2 (en) * | 2007-11-14 | 2014-12-02 | Applied Materials, Inc. | Plasma immersion ion implantation reactor with extended cathode process ring |
JP5301812B2 (ja) * | 2007-11-14 | 2013-09-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4486135B2 (ja) | 2008-01-22 | 2010-06-23 | 東京エレクトロン株式会社 | 温度制御機構およびそれを用いた処理装置 |
JP5351479B2 (ja) | 2008-01-28 | 2013-11-27 | 東京エレクトロン株式会社 | 加熱源の冷却構造 |
JP5307445B2 (ja) | 2008-04-28 | 2013-10-02 | 日本碍子株式会社 | 基板保持体及びその製造方法 |
JP4879233B2 (ja) | 2008-07-18 | 2012-02-22 | ファルマー・インヴェストメンツ・リミテッド | 布地染色機用フィルタ |
US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
JP5270310B2 (ja) | 2008-11-13 | 2013-08-21 | 東京エレクトロン株式会社 | 静電チャック及び基板処理装置 |
JP2010153730A (ja) | 2008-12-26 | 2010-07-08 | Omron Corp | 配線構造、ヒータ駆動装置、計測装置および制御システム |
EP2396804B1 (en) * | 2009-02-10 | 2014-03-26 | HELYSSEN S.à.r.l. | Apparatus for large area plasma processing |
GB2470063B (en) | 2009-05-08 | 2011-09-28 | Siemens Magnet Technology Ltd | Quench propagation circuit for superconducting magnets |
EP3020850B1 (en) | 2009-07-08 | 2018-08-29 | Aixtron SE | Apparatus for plasma processing |
US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
KR101952065B1 (ko) | 2009-11-06 | 2019-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 동작 방법 |
SG180882A1 (en) | 2009-12-15 | 2012-07-30 | Lam Res Corp | Adjusting substrate temperature to improve cd uniformity |
KR101390444B1 (ko) | 2010-03-26 | 2014-04-30 | 가부시키가이샤 알박 | 기판 보호지지 장치 |
US9793126B2 (en) * | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US8520360B2 (en) * | 2011-07-19 | 2013-08-27 | Lam Research Corporation | Electrostatic chuck with wafer backside plasma assisted dechuck |
CN103718284B (zh) * | 2011-07-26 | 2016-08-17 | 松下知识产权经营株式会社 | 等离子体处理装置以及等离子体处理方法 |
US9307578B2 (en) | 2011-08-17 | 2016-04-05 | Lam Research Corporation | System and method for monitoring temperatures of and controlling multiplexed heater array |
US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
US8624168B2 (en) | 2011-09-20 | 2014-01-07 | Lam Research Corporation | Heating plate with diode planar heater zones for semiconductor processing |
US8461674B2 (en) | 2011-09-21 | 2013-06-11 | Lam Research Corporation | Thermal plate with planar thermal zones for semiconductor processing |
UY34484A (es) | 2011-12-15 | 2013-07-31 | Bayer Ip Gmbh | Benzotienilo-pirrolotriazinas disustituidas y sus usos |
US9324589B2 (en) | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
US8809747B2 (en) | 2012-04-13 | 2014-08-19 | Lam Research Corporation | Current peak spreading schemes for multiplexed heated array |
JP6010391B2 (ja) | 2012-08-24 | 2016-10-19 | 旭化成株式会社 | モールドの製造方法 |
JP2014049667A (ja) * | 2012-09-03 | 2014-03-17 | Tokyo Electron Ltd | プラズマ処理装置及びこれを備えた基板処理装置 |
JP5971144B2 (ja) * | 2013-02-06 | 2016-08-17 | 東京エレクトロン株式会社 | 基板処理装置及び成膜方法 |
US9697993B2 (en) * | 2013-11-06 | 2017-07-04 | Tokyo Electron Limited | Non-ambipolar plasma ehncanced DC/VHF phasor |
JP6218650B2 (ja) * | 2014-03-11 | 2017-10-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
JP6319687B2 (ja) * | 2014-05-26 | 2018-05-09 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及び方法 |
US9941132B2 (en) * | 2015-03-31 | 2018-04-10 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
US9570272B2 (en) * | 2015-03-31 | 2017-02-14 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
JP7149068B2 (ja) * | 2017-12-21 | 2022-10-06 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
US20200048770A1 (en) * | 2018-08-07 | 2020-02-13 | Lam Research Corporation | Chemical vapor deposition tool for preventing or suppressing arcing |
JP7209508B2 (ja) * | 2018-10-16 | 2023-01-20 | 株式会社東芝 | プロセス装置 |
-
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677146A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | プラズマ処理装置 |
JPH0987839A (ja) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | 薄膜作製方法及び薄膜作製装置 |
JPH11283926A (ja) * | 1998-01-29 | 1999-10-15 | Anelva Corp | プラズマ処理装置 |
JP2002313535A (ja) * | 2001-04-13 | 2002-10-25 | Sumitomo Electric Ind Ltd | 被処理物保持体 |
JP2006509365A (ja) * | 2002-12-06 | 2006-03-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プラズマ・エッチング中に帯電粒子からウェハを遮蔽する装置および方法 |
JP2010225941A (ja) * | 2009-03-24 | 2010-10-07 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2011018684A (ja) * | 2009-07-07 | 2011-01-27 | Tokyo Electron Ltd | プラズマ処理用基板載置台、プラズマ処理方法、及びプラズマ処理装置 |
US20110092072A1 (en) * | 2009-10-21 | 2011-04-21 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
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WO2013039718A1 (en) | 2013-03-21 |
KR20140070607A (ko) | 2014-06-10 |
US10388493B2 (en) | 2019-08-20 |
KR20200052385A (ko) | 2020-05-14 |
JP6494713B2 (ja) | 2019-04-03 |
TWI570832B (zh) | 2017-02-11 |
JP6271427B2 (ja) | 2018-01-31 |
KR20230098924A (ko) | 2023-07-04 |
KR20210089250A (ko) | 2021-07-15 |
KR102550232B1 (ko) | 2023-06-29 |
US20190371576A1 (en) | 2019-12-05 |
US20130072025A1 (en) | 2013-03-21 |
JP2018037662A (ja) | 2018-03-08 |
TW201327718A (zh) | 2013-07-01 |
US10872748B2 (en) | 2020-12-22 |
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