JP2014013874A - 基板支持装置 - Google Patents
基板支持装置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
【解決手段】本発明の基板支持装置は、金属で形成されたプレート部と、プレート部に接続し、金属で形成されたシャフト部と、プレート部の内部に配設された発熱体と、シャフト部と対向するプレート部の第1の面にセラミック溶射により形成された絶縁膜と、を備える。プレート部の第1の面と概略直交する第2の面に形成された絶縁膜をさらに備えてもよい。
【選択図】 図1
Description
図1は、本発明の一実施形態に係る基板支持装置100の斜視図である。また、図2は図1のAA’における断面図である。本実施形態に係る基板支持装置100は、プレート部110及びシャフト部150を備え、プレート部110の内部に発熱体120が配設される。プレート部110の上面には基板を支持するための凹部113が形成され、凹部113とは反対側のプレート部110の中央部にシャフト部150が接続する。シャフト部150は中空構造170を有する。シャフト部150の中空構造170には、発熱体120に接続し、外部の制御装置(図示せず)に接続する配線160が配設される。
冷間時:σ=(αs−αf)・E・(T0−T1)
熱間時:σ=(αs−αf)・E・(T0−T2)
冷間時(T0−T1)は正であり、αs>αfのためσは正で圧縮応力を受けている。しかし、溶射中のプレート部110の温度を超える温度で基板支持装置100を加熱使用すれば、σは負となり絶縁膜119には引張応力がかかってクラックが発生する要因になる。
図3は、本発明の一実施形態に係る基板支持装置200の図1のAA’に相当する位置における断面図である。本実施形態に係る基板支持装置200は、プレート部110に代えて、3つの部材210a、210b及び210cで構成されるプレート部210を備える。発熱体120は、部材210aまたは210bに溝を形成して配設する。また、部材210bまたは210cに溝を形成して、冷媒流路290を配設している。プレート部210の上面には基板を支持するための凹部213が形成され、凹部213とは反対側のプレート部210の中央部にシャフト部150が接続する。シャフト部150は実施形態1に説明したものと同様であるため、詳細な説明は省略する。
図4は、本発明の一実施形態に係る基板支持装置300の図1のAA’に相当する位置における断面図である。本実施形態に係る基板支持装置300は、プレート部110に代えて、角部をC面取りしたプレート部310を備える。発熱体120は、部材310aまたは310bに溝を形成して配設する。プレート部310の上面には基板を支持するための凹部313が形成され、凹部313とは反対側のプレート部310の中央部にシャフト部150が接続する。シャフト部150は実施形態1に説明したものと同様であるため、詳細な説明は省略する。なお、実施形態2で説明したように、部材310bまたは310cに溝を形成して、冷媒流路を配設してもよい。
図5は、本発明の一実施形態に係る基板支持装置400の図1のAA’に相当する位置における断面図である。本実施形態に係る基板支持装置400は、プレート部210と同様に、3つの部材410a、410b及び410cで構成されるプレート部410を備える。発熱体120は、部材410aまたは410bに溝を形成して配設する。また、部材410bまたは410cに溝を形成して、冷媒流路290を配設している。プレート部410の上面には基板を支持するための凹部413が形成され、凹部413とは反対側のプレート部410の中央部にシャフト部150が接続する。シャフト部150は実施形態1に説明したものと同様であるため、詳細な説明は省略する。
半導体装置の製造において、基板支持装置は、熱サイクルをかけて使用されることがある。したがって、熱サイクルをかけたときに、絶縁膜119にクラックが生じないようにする必要がある。本実施例においては、常温(40℃)から250℃に昇温し、250℃から40℃に降温する1サイクルを1時間で行い、合計60サイクルの熱サイクル試験により、絶縁膜119を評価した。評価には、溶射中のワーク温度を80℃、150℃及び250℃でプレート部110に形成した絶縁膜119を用いた。絶縁膜119は、セラミック溶射により250μm〜300μmの溶射膜を形成し、研磨加工により100μm〜150μmの膜厚とした。
Claims (8)
- 金属で形成されたプレート部と、
前記プレート部に接続し、金属で形成されたシャフト部と、
前記プレート部の内部に配設された発熱体と、
前記シャフト部と対向する前記プレート部の第1の面にセラミック溶射により形成された絶縁膜と、を備えることを特徴とする基板支持装置。 - 前記プレート部の第1の面と概略直交する第2の面に形成された絶縁膜をさらに備えることを特徴とする請求項1に記載の基板支持装置。
- 前記プレート部の前記第1の面と前記第2の面との角部にC面取りまたは曲率を有する、および/または、前記プレート部の第2の面から、前記シャフト部と接続する前記プレート部の第3の面に向かって、C面取りまたは曲率を有することを特徴とする請求項2に記載の基板支持装置。
- 前記プレート部の前記第1の面と前記第2の面との角部に0.5mm以上のC面取りまたは曲率半径を有し、および/または、前記プレート部の第2の面から、前記シャフト部と接続する前記プレート部の第3の面に向かって、0.5mm以上のC面取りまたは曲率半径を有することを特徴とする請求項3に記載の基板支持装置。
- 前記プレート部の第2の面から、前記シャフト部と接続する前記プレート部の第3の面に向かって、前記プレート部の板厚に概略等しい値の曲率半径を有することを特徴とする請求項3に記載の基板支持装置。
- 前記第3の面は絶縁膜をさらに備えることを特徴とする請求項2乃至4の何れか一に記載の基板支持装置。
- 前記プレート部の第1の面は凹部を備え、
前記第1の面の凹部の角部は、0.5mm以上のC面取りまたは曲率半径を有することを特徴とする請求項2乃至6の何れか一に記載の基板支持装置。 - 前記絶縁膜が、前記基板支持装置の実使用温度において割れが発生しない残留応力となるワーク温度で前記プレート部に溶射されることにより、形成されることを特徴とする請求項1乃至7の何れか一に記載の基板支持装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249591A JP6027407B2 (ja) | 2011-11-25 | 2012-11-13 | 基板支持装置 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/304,493 US9153463B2 (en) | 2011-11-25 | 2011-11-25 | Substrate support device |
US13/304,493 | 2011-11-25 | ||
JP2012127130 | 2012-06-04 | ||
JP2012127130 | 2012-06-04 | ||
US13/667,512 US10276410B2 (en) | 2011-11-25 | 2012-11-02 | Substrate support device |
US13/667,512 | 2012-11-02 | ||
JP2012249591A JP6027407B2 (ja) | 2011-11-25 | 2012-11-13 | 基板支持装置 |
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Publication Number | Publication Date |
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JP2014013874A true JP2014013874A (ja) | 2014-01-23 |
JP6027407B2 JP6027407B2 (ja) | 2016-11-16 |
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JP2012249591A Active JP6027407B2 (ja) | 2011-11-25 | 2012-11-13 | 基板支持装置 |
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US (1) | US10276410B2 (ja) |
JP (1) | JP6027407B2 (ja) |
KR (1) | KR102056949B1 (ja) |
CN (1) | CN103137534B (ja) |
TW (1) | TWI621204B (ja) |
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Also Published As
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TW201324677A (zh) | 2013-06-16 |
TWI621204B (zh) | 2018-04-11 |
KR20130058632A (ko) | 2013-06-04 |
CN103137534B (zh) | 2017-12-01 |
JP6027407B2 (ja) | 2016-11-16 |
KR102056949B1 (ko) | 2019-12-17 |
CN103137534A (zh) | 2013-06-05 |
US20130134148A1 (en) | 2013-05-30 |
US10276410B2 (en) | 2019-04-30 |
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