JP6322656B2 - 低熱膨張係数の上部を備えたワーク受台構造 - Google Patents
低熱膨張係数の上部を備えたワーク受台構造 Download PDFInfo
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- JP6322656B2 JP6322656B2 JP2015560368A JP2015560368A JP6322656B2 JP 6322656 B2 JP6322656 B2 JP 6322656B2 JP 2015560368 A JP2015560368 A JP 2015560368A JP 2015560368 A JP2015560368 A JP 2015560368A JP 6322656 B2 JP6322656 B2 JP 6322656B2
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- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910000676 Si alloy Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 5
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- 239000002346 layers by function Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
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- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
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- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
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- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
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- Y10T29/49002—Electrical device making
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- Y10T29/00—Metal working
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Description
本発明が良好に理解されるために、添付図面を参照する例示によってその実施形態を記載する。
Claims (20)
- 処理基材と、
ヒーター層が上記処理基材と直接接触するように、積層工程により上記処理基材上に直接配置されたヒーター層と、
上記ヒーター層上に配置された絶縁層と、
上記絶縁層上に配置された第2基材とを備え、
上記第2基材は、ベース部と、上記ベース部から垂直にかつベース部の外縁に沿って延在する周縁部とを有し、
上記処理基材、上記ヒーター層および上記絶縁層は上記第2基材の上記ベース部によって支持され、上記第2基材の上記ベース部は、複数のガスチャネルを規定し、
上記処理基材は、上記ヒーター層の熱膨張係数に整合する熱膨張係数を有する材料を規定し、
上記第2基材の上記周縁部の上面は、上記処理基材の上面より低く、かつ上記処理基材の上記上面から露出しており、上記処理基材の上記上面と上記第2基材の上記周縁部の上記上面との間に段が定義されることを特徴とする半導体加工に用いられる支持アッセンブリ。 - 上記処理基材は、アルミニウム−シリコン合金であることを特徴とする請求項1に記載の支持アッセンブリ。
- さらに上記処理基材の上記上面に接続された加熱基材を備え、上記上面は化学的分離層を有することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記化学的分離層は、溶射セラミック材料、薄膜析出セラミック材料、化成被覆及び接着接合焼結セラミック部材からなる一群から選択されることを特徴とする請求項3に記載の支持アッセンブリ。
- 上記処理基材は、MIG、TIG、レーザー、電子ビーム溶接、ろう付け、拡散接合及び接着接合からなる一群から選択された熱接合工程により加熱基材に固定される際のインターフェースとして機能することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記ヒーター層用の積層工程は、熱スプレイ、厚膜、薄膜、及び、ゾルゲルからなる一群から選択されることを特徴とする請求項1に記載の支持アッセンブリ。
- 上記処理基材は、Osprey(登録商標)Controlled Expansion (CE)合金を規定することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記処理基材は、上記処理基材の熱膨張係数が上記ヒーター層のものと整合するように変更自在な組成を有することを特徴とする請求項7に記載の支持アッセンブリ。
- 上記処理基材は化学的分離層を有することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記処理基材は金属層及び上記金属層上の化学的分離層を有することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記第2基材はパージガスを供給するガス供給基材であることを特徴とする請求項1に記載の支持アッセンブリ。
- 上記第2基材は上記処理基材を冷却する冷却基材であることを特徴とする請求項1に記載の支持アッセンブリ。
- 上記第2基材に連結されたワーク受台をさらに備えることを特徴とする請求項1に記載の支持アッセンブリ。
- 上記第2基材にパージガスを供給するために、上記ワーク受台内に収容されたガス管をさらに備えることを特徴とする請求項13に記載の支持アッセンブリ。
- 上記ワーク受台内に収容された真空ガス管をさらに備えることを特徴とする請求項13に記載の支持アッセンブリ。
- 上記処理基材は複数の真空締め付けチャネルを規定することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記処理基材は隣接ピンを収容するリフトピン孔を規定することを特徴とする請求項1に記載の支持アッセンブリ。
- 上記隣接ピンは、ウェーハーを支持し、上記処理基材上にウェーハーを配置するために、移動自在であることを特徴とする請求項17に記載の支持アッセンブリ。
- 筒状ワーク受台と、
上記筒状ワーク受台に連結されたガス供給基材と、
ウェーハーを加熱するための上記ガス供給基材上に設けられたヒーター層と、
熱膨張係数が上記ヒーター層のものと整合するように変更自在な組成を有するOsprey(登録商標)Controlled Expansion (CE)合金を含み、上記ヒーター層上に配置された処理基材とを備え、
上記ガス供給基材は、ベース部と、上記ベース部から垂直にかつベース部の外縁に沿って延在する周縁部とを有し、上記ガス供給基材の上記ベース部は複数のガスチャネルを規定し、
上記ガス供給基材の上記周縁部の上面は、上記処理基材の上面より低く、かつ上記処理基材の上面から露出しており、上記処理基材の上記上面と上記ガス供給基材の上記周縁部の上記上面との間に段が定義され、
上記処理基材および上記ヒーター層は、上記ガス供給基材の上記ベース部によって支持されていることを特徴とする半導体加工に用いられる支持アッセンブリ。 - 上記ガス供給基材にパージガスを供給するための上記ワーク受台内に収容されたガス管をさらに備えることを特徴とする請求項19に記載の支持アッセンブリ。
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US13/836,373 US9673077B2 (en) | 2012-07-03 | 2013-03-15 | Pedestal construction with low coefficient of thermal expansion top |
PCT/US2014/019544 WO2014134507A2 (en) | 2013-02-28 | 2014-02-28 | Pedestal construction with low coefficient of thermal expansion top |
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3155799A1 (en) * | 2014-06-12 | 2017-04-19 | Thomson Licensing | Method of mapping source colors of a source content |
JP6442296B2 (ja) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
WO2016137946A1 (en) * | 2015-02-23 | 2016-09-01 | Momentive Performance Materials Inc. | Electrical connection with protection from harsh environments |
US10453731B2 (en) * | 2016-10-21 | 2019-10-22 | Raytheon Company | Direct bond method providing thermal expansion matched devices |
JP6704836B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
JP6704834B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
US11018048B2 (en) * | 2017-11-21 | 2021-05-25 | Watlow Electric Manufacturing Company | Ceramic pedestal having atomic protective layer |
US11515130B2 (en) | 2018-03-05 | 2022-11-29 | Applied Materials, Inc. | Fast response pedestal assembly for selective preclean |
US11961747B2 (en) * | 2018-03-28 | 2024-04-16 | Kyocera Corporation | Heater and heater system |
KR102154488B1 (ko) * | 2018-07-09 | 2020-09-10 | 주식회사 테스 | 냉각모듈 및 이를 구비한 기판지지유닛 |
KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
USD931240S1 (en) * | 2019-07-30 | 2021-09-21 | Applied Materials, Inc. | Substrate support pedestal |
USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
CN115769354A (zh) * | 2020-06-03 | 2023-03-07 | 朗姆研究公司 | 用于高效率传热的单块式基座 |
US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
CN112192154A (zh) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | 刻蚀机用气体喷淋盘的加工工艺 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3710251A (en) | 1971-04-07 | 1973-01-09 | Collins Radio Co | Microelectric heat exchanger pedestal |
US5631803A (en) * | 1995-01-06 | 1997-05-20 | Applied Materials, Inc. | Erosion resistant electrostatic chuck with improved cooling system |
DE69619898T2 (de) | 1995-07-14 | 2002-11-07 | Ngk Insulators Ltd | Verfahren zum Verbinden von Keramik |
KR100280634B1 (ko) | 1996-05-05 | 2001-02-01 | 세이이치로 미야타 | 전기 발열체 및 이를 이용한 정전 척 |
GB2325939B (en) | 1997-01-02 | 2001-12-19 | Cvc Products Inc | Thermally conductive chuck for vacuum processor |
JP4022954B2 (ja) | 1997-01-29 | 2007-12-19 | ソニー株式会社 | 複合材料及びその製造方法、基体処理装置及びその作製方法、基体載置ステージ及びその作製方法、並びに基体処理方法 |
TW524873B (en) | 1997-07-11 | 2003-03-21 | Applied Materials Inc | Improved substrate supporting apparatus and processing chamber |
JPH11157953A (ja) | 1997-12-02 | 1999-06-15 | Nhk Spring Co Ltd | セラミックスと金属との構造体及びそれを用いた静電チャック装置 |
US6328096B1 (en) | 1997-12-31 | 2001-12-11 | Temptronic Corporation | Workpiece chuck |
US6583638B2 (en) | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
JP4021575B2 (ja) | 1999-01-28 | 2007-12-12 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体およびその製造方法 |
JP2000286332A (ja) * | 1999-03-31 | 2000-10-13 | Shibaura Mechatronics Corp | ドライエッチング用静電チャック装置及び載置台 |
EP1193751B1 (en) | 1999-04-06 | 2006-05-17 | Tokyo Electron Limited | Electrode and method of manufacturing an electrode |
US6490146B2 (en) | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
US6310755B1 (en) | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
US6462928B1 (en) | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
US6464795B1 (en) | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
JP2001297857A (ja) | 1999-11-24 | 2001-10-26 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
US6511759B1 (en) | 2000-02-07 | 2003-01-28 | Carl Schalansky | Means and method for producing multi-element laminar structures |
US6717115B1 (en) | 2000-04-25 | 2004-04-06 | Teradyne, Inc. | Semiconductor handler for rapid testing |
US6444957B1 (en) | 2000-04-26 | 2002-09-03 | Sumitomo Osaka Cement Co., Ltd | Heating apparatus |
JP2001313157A (ja) * | 2000-04-26 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | 加熱装置 |
JP3851489B2 (ja) | 2000-04-27 | 2006-11-29 | 日本発条株式会社 | 静電チャック |
KR20010111058A (ko) | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
US6503368B1 (en) | 2000-06-29 | 2003-01-07 | Applied Materials Inc. | Substrate support having bonded sections and method |
US6583980B1 (en) | 2000-08-18 | 2003-06-24 | Applied Materials Inc. | Substrate support tolerant to thermal expansion stresses |
US6508062B2 (en) | 2001-01-31 | 2003-01-21 | Applied Materials, Inc. | Thermal exchanger for a wafer chuck |
US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
DE10162276C5 (de) | 2001-12-19 | 2019-03-14 | Watlow Electric Manufacturing Co. | Rohrförmiger Durchlauferhitzer und Heizplatte sowie Verfahren zu deren Herstellung |
US6646233B2 (en) | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
US6875927B2 (en) | 2002-03-08 | 2005-04-05 | Applied Materials, Inc. | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications |
JP4026759B2 (ja) * | 2002-11-18 | 2007-12-26 | 日本碍子株式会社 | 加熱装置 |
US20040154647A1 (en) | 2003-02-07 | 2004-08-12 | Supercritical Systems, Inc. | Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing |
JP4008401B2 (ja) | 2003-09-22 | 2007-11-14 | 日本碍子株式会社 | 基板載置台の製造方法 |
JP2005109169A (ja) * | 2003-09-30 | 2005-04-21 | Ngk Insulators Ltd | 基板加熱装置とその製造方法 |
JP4787568B2 (ja) | 2004-11-16 | 2011-10-05 | 日本碍子株式会社 | 接合剤、窒化アルミニウム接合体及びその製造方法 |
JP3945527B2 (ja) | 2004-11-30 | 2007-07-18 | 住友電気工業株式会社 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
JP2006305713A (ja) * | 2005-03-28 | 2006-11-09 | Nikon Corp | 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法 |
US7709099B2 (en) | 2005-07-04 | 2010-05-04 | Kyocera Corporation | Bonded body, wafer support member using the same, and wafer treatment method |
JP2007035899A (ja) | 2005-07-27 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
JP2007051317A (ja) * | 2005-08-16 | 2007-03-01 | Ngk Insulators Ltd | 加熱装置 |
CN101243542B (zh) * | 2005-08-17 | 2011-02-09 | 应用材料股份有限公司 | 具有焊接板和加热器的基材支撑件 |
US7525787B2 (en) * | 2005-09-30 | 2009-04-28 | Lam Research Corporation | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
US7446284B2 (en) | 2005-12-21 | 2008-11-04 | Momentive Performance Materials Inc. | Etch resistant wafer processing apparatus and method for producing the same |
CN101101855A (zh) * | 2006-07-05 | 2008-01-09 | 通用电气公司 | 电阻加热元件用的电极图案以及衬底处理装置 |
US8168050B2 (en) | 2006-07-05 | 2012-05-01 | Momentive Performance Materials Inc. | Electrode pattern for resistance heating element and wafer processing apparatus |
TWI345285B (en) | 2006-10-06 | 2011-07-11 | Ngk Insulators Ltd | Substrate supporting member |
CN103295949B (zh) | 2007-04-05 | 2016-12-28 | 雅赫测试系统公司 | 测试微电子电路的方法、测试器设备及便携式组装 |
US7667944B2 (en) | 2007-06-29 | 2010-02-23 | Praxair Technology, Inc. | Polyceramic e-chuck |
US7800021B2 (en) * | 2007-06-30 | 2010-09-21 | Husky Injection Molding Systems Ltd. | Spray deposited heater element |
US20090305489A1 (en) | 2008-06-05 | 2009-12-10 | Fish Roger B | Multilayer electrostatic chuck wafer platen |
WO2010099544A2 (en) * | 2009-02-27 | 2010-09-02 | Alta Devices, Inc. | Tiled substrates for deposition and epitaxial lift off processes |
US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
-
2013
- 2013-03-15 US US13/836,373 patent/US9673077B2/en active Active
-
2014
- 2014-02-28 CN CN201480010458.3A patent/CN105009686B/zh active Active
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- 2014-02-28 KR KR1020157025854A patent/KR102213060B1/ko active IP Right Grant
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- 2014-02-28 WO PCT/US2014/019544 patent/WO2014134507A2/en active Application Filing
- 2014-02-28 CA CA2902220A patent/CA2902220C/en not_active Expired - Fee Related
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US20140011153A1 (en) | 2014-01-09 |
EP2962524A2 (en) | 2016-01-06 |
CN105009686B (zh) | 2020-05-05 |
WO2014134507A2 (en) | 2014-09-04 |
MX2015011285A (es) | 2016-02-03 |
JP2016508676A (ja) | 2016-03-22 |
CA2902220A1 (en) | 2014-09-04 |
WO2014134507A3 (en) | 2014-10-23 |
MX350960B (es) | 2017-09-27 |
EP2962524B1 (en) | 2019-12-25 |
US9673077B2 (en) | 2017-06-06 |
KR102213060B1 (ko) | 2021-02-05 |
KR20150122699A (ko) | 2015-11-02 |
US20170221734A1 (en) | 2017-08-03 |
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