MX350960B - Construcción de pedestal con bajo coeficiente de expansión termica máximo. - Google Patents

Construcción de pedestal con bajo coeficiente de expansión termica máximo.

Info

Publication number
MX350960B
MX350960B MX2015011285A MX2015011285A MX350960B MX 350960 B MX350960 B MX 350960B MX 2015011285 A MX2015011285 A MX 2015011285A MX 2015011285 A MX2015011285 A MX 2015011285A MX 350960 B MX350960 B MX 350960B
Authority
MX
Mexico
Prior art keywords
thermal expansion
low coefficient
heater layer
application substrate
substrate
Prior art date
Application number
MX2015011285A
Other languages
English (en)
Other versions
MX2015011285A (es
Inventor
R Lindley Jacob
Original Assignee
Watlow Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watlow Electric Mfg filed Critical Watlow Electric Mfg
Publication of MX2015011285A publication Critical patent/MX2015011285A/es
Publication of MX350960B publication Critical patent/MX350960B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
    • Y10T29/53178—Chip component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)

Abstract

Un ensamble de soporte para su uso en el procesamiento de semiconductores que incluye un sustrato de aplicación, una capa calentadora dispuesta directamente sobre el sustrato de aplicación, una capa de aislamiento dispuesta sobre la capa calentadora, y un segundo sustrato dispuesto sobre la capa de aislamiento. La capa calentadora está dispuesta directamente sobre el sustrato de aplicación por un proceso de laminado de tal forma que la capa calentadora está en contacto directo con el sustrato de aplicación. El sustrato de aplicación define un material que tiene un coeficiente de expansión térmico relativamente bajo que se iguala con un coeficiente de expansión térmico de la capa calentadora.
MX2015011285A 2013-02-28 2014-02-28 Construcción de pedestal con bajo coeficiente de expansión termica máximo. MX350960B (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361770910P 2013-02-28 2013-02-28
US13/836,373 US9673077B2 (en) 2012-07-03 2013-03-15 Pedestal construction with low coefficient of thermal expansion top
PCT/US2014/019544 WO2014134507A2 (en) 2013-02-28 2014-02-28 Pedestal construction with low coefficient of thermal expansion top

Publications (2)

Publication Number Publication Date
MX2015011285A MX2015011285A (es) 2016-02-03
MX350960B true MX350960B (es) 2017-09-27

Family

ID=50288329

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015011285A MX350960B (es) 2013-02-28 2014-02-28 Construcción de pedestal con bajo coeficiente de expansión termica máximo.

Country Status (8)

Country Link
US (2) US9673077B2 (es)
EP (1) EP2962524B1 (es)
JP (1) JP6322656B2 (es)
KR (1) KR102213060B1 (es)
CN (1) CN105009686B (es)
CA (1) CA2902220C (es)
MX (1) MX350960B (es)
WO (1) WO2014134507A2 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3155799A1 (en) * 2014-06-12 2017-04-19 Thomson Licensing Method of mapping source colors of a source content
JP6442296B2 (ja) * 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
WO2016137946A1 (en) * 2015-02-23 2016-09-01 Momentive Performance Materials Inc. Electrical connection with protection from harsh environments
US10453731B2 (en) * 2016-10-21 2019-10-22 Raytheon Company Direct bond method providing thermal expansion matched devices
JP6704836B2 (ja) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 加熱装置
JP6704834B2 (ja) * 2016-10-28 2020-06-03 日本特殊陶業株式会社 加熱装置
KR102300756B1 (ko) * 2017-11-21 2021-09-10 와틀로 일렉트릭 매뉴팩츄어링 컴파니 원자 보호층을 갖는 세라믹 받침대
US11515130B2 (en) * 2018-03-05 2022-11-29 Applied Materials, Inc. Fast response pedestal assembly for selective preclean
JP7037640B2 (ja) * 2018-03-28 2022-03-16 京セラ株式会社 ヒータ及びヒータシステム
KR102154488B1 (ko) * 2018-07-09 2020-09-10 주식회사 테스 냉각모듈 및 이를 구비한 기판지지유닛
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
USD931240S1 (en) * 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal
USD884855S1 (en) * 2019-10-30 2020-05-19 Applied Materials, Inc. Heater pedestal
KR20230031833A (ko) * 2020-06-03 2023-03-07 램 리써치 코포레이션 효율적인 열 전달을 위한 모노블록 (monobloc) 페데스탈
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
CN112192154A (zh) * 2020-09-30 2021-01-08 靖江先锋半导体科技有限公司 刻蚀机用气体喷淋盘的加工工艺

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710251A (en) 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
US5631803A (en) * 1995-01-06 1997-05-20 Applied Materials, Inc. Erosion resistant electrostatic chuck with improved cooling system
US5794838A (en) 1995-07-14 1998-08-18 Ngk Insulators, Ltd. Ceramics joined body and method of joining ceramics
EP0899986B1 (en) 1996-05-05 2004-11-24 Tateho Chemical Industries Co., Ltd. Electric heating element and electrostatic chuck using the same
GB2325939B (en) 1997-01-02 2001-12-19 Cvc Products Inc Thermally conductive chuck for vacuum processor
JP4022954B2 (ja) 1997-01-29 2007-12-19 ソニー株式会社 複合材料及びその製造方法、基体処理装置及びその作製方法、基体載置ステージ及びその作製方法、並びに基体処理方法
TW524873B (en) 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
JPH11157953A (ja) 1997-12-02 1999-06-15 Nhk Spring Co Ltd セラミックスと金属との構造体及びそれを用いた静電チャック装置
US6328096B1 (en) 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US6583638B2 (en) 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
JP4021575B2 (ja) 1999-01-28 2007-12-12 日本碍子株式会社 セラミックス部材と金属部材との接合体およびその製造方法
JP2000286332A (ja) * 1999-03-31 2000-10-13 Shibaura Mechatronics Corp ドライエッチング用静電チャック装置及び載置台
EP1193751B1 (en) 1999-04-06 2006-05-17 Tokyo Electron Limited Electrode and method of manufacturing an electrode
US6462928B1 (en) 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP2001297857A (ja) 1999-11-24 2001-10-26 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
US6511759B1 (en) 2000-02-07 2003-01-28 Carl Schalansky Means and method for producing multi-element laminar structures
US6717115B1 (en) 2000-04-25 2004-04-06 Teradyne, Inc. Semiconductor handler for rapid testing
US6444957B1 (en) 2000-04-26 2002-09-03 Sumitomo Osaka Cement Co., Ltd Heating apparatus
JP2001313157A (ja) * 2000-04-26 2001-11-09 Sumitomo Osaka Cement Co Ltd 加熱装置
JP3851489B2 (ja) 2000-04-27 2006-11-29 日本発条株式会社 静電チャック
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6503368B1 (en) 2000-06-29 2003-01-07 Applied Materials Inc. Substrate support having bonded sections and method
US6583980B1 (en) 2000-08-18 2003-06-24 Applied Materials Inc. Substrate support tolerant to thermal expansion stresses
US6508062B2 (en) 2001-01-31 2003-01-21 Applied Materials, Inc. Thermal exchanger for a wafer chuck
US6538872B1 (en) 2001-11-05 2003-03-25 Applied Materials, Inc. Electrostatic chuck having heater and method
DE10162276C5 (de) 2001-12-19 2019-03-14 Watlow Electric Manufacturing Co. Rohrförmiger Durchlauferhitzer und Heizplatte sowie Verfahren zu deren Herstellung
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US6875927B2 (en) 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP4026759B2 (ja) * 2002-11-18 2007-12-26 日本碍子株式会社 加熱装置
US20040154647A1 (en) 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
JP4008401B2 (ja) 2003-09-22 2007-11-14 日本碍子株式会社 基板載置台の製造方法
JP2005109169A (ja) 2003-09-30 2005-04-21 Ngk Insulators Ltd 基板加熱装置とその製造方法
JP4787568B2 (ja) 2004-11-16 2011-10-05 日本碍子株式会社 接合剤、窒化アルミニウム接合体及びその製造方法
JP3945527B2 (ja) 2004-11-30 2007-07-18 住友電気工業株式会社 ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ
US8038796B2 (en) * 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
JP2006305713A (ja) * 2005-03-28 2006-11-09 Nikon Corp 吸着装置、研磨装置、半導体デバイス及び半導体デバイス製造方法
TWI329625B (en) 2005-07-04 2010-09-01 Kyocera Corp Bonded body, wafer support member using the same, and wafer treatment method
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
KR100974130B1 (ko) * 2005-08-17 2010-08-04 어플라이드 머티어리얼스, 인코포레이티드 용접된 판과 저항식 히터를 갖는 기판 지지대
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
US7446284B2 (en) 2005-12-21 2008-11-04 Momentive Performance Materials Inc. Etch resistant wafer processing apparatus and method for producing the same
US8168050B2 (en) * 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
CN101101855A (zh) * 2006-07-05 2008-01-09 通用电气公司 电阻加热元件用的电极图案以及衬底处理装置
TWI345285B (en) 2006-10-06 2011-07-11 Ngk Insulators Ltd Substrate supporting member
US7667475B2 (en) 2007-04-05 2010-02-23 Aehr Test Systems Electronics tester with a signal distribution board and a wafer chuck having different coefficients of thermal expansion
US7667944B2 (en) 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
US7800021B2 (en) * 2007-06-30 2010-09-21 Husky Injection Molding Systems Ltd. Spray deposited heater element
US20090305489A1 (en) 2008-06-05 2009-12-10 Fish Roger B Multilayer electrostatic chuck wafer platen
KR20110125655A (ko) * 2009-02-27 2011-11-21 알타 디바이씨즈, 인크. 증착 및 액피텍셜 리프트 오프 공정을 통한 타일형 기판
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater

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EP2962524A2 (en) 2016-01-06
CA2902220A1 (en) 2014-09-04
MX2015011285A (es) 2016-02-03
KR102213060B1 (ko) 2021-02-05
EP2962524B1 (en) 2019-12-25
US9673077B2 (en) 2017-06-06
WO2014134507A2 (en) 2014-09-04
US20140011153A1 (en) 2014-01-09
JP2016508676A (ja) 2016-03-22
CN105009686A (zh) 2015-10-28
US20170221734A1 (en) 2017-08-03
CN105009686B (zh) 2020-05-05
CA2902220C (en) 2018-11-06
JP6322656B2 (ja) 2018-05-09
KR20150122699A (ko) 2015-11-02

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