JP6382979B2 - 載置用部材 - Google Patents
載置用部材 Download PDFInfo
- Publication number
- JP6382979B2 JP6382979B2 JP2016535957A JP2016535957A JP6382979B2 JP 6382979 B2 JP6382979 B2 JP 6382979B2 JP 2016535957 A JP2016535957 A JP 2016535957A JP 2016535957 A JP2016535957 A JP 2016535957A JP 6382979 B2 JP6382979 B2 JP 6382979B2
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- layer
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- mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Description
2 対象物
3 載置面
7 挿通孔
8 底面
9 突起部
10 環状凸部
20 第1構造体
21 第1絶縁体層
22 ヒータ
23 第2絶縁体層
24 吸着用電極層
25 第3絶縁体層
30 第2構造体
32 第4絶縁体層
40 流路
44 流体
46 接合層
Claims (9)
- 対象物が載置される載置面を表面の一部に備える本体部と、該本体部の内部に設けられた流路と、
前記流路の内面に設けられた、前記本体部に比べて熱伝導率が高い第1層とを備えた載置用部材であって、
前記本体部は、平面視したときに前記流路以外の部分に、前記載置面に沿って設けられた、前記本体部に比べて熱伝導率が高い第2層を備え、前記第1層と前記第2層とが繋がっており、前記載置面を備える第1構造体と、前記第1構造体の前記載置面と反対側の面に設けられた第2構造体とをさらに備え、
前記第2層は、前記第1構造体と前記第2構造体との間に配置されて、前記第1構造体および前記第2構造体を接合しており、
さらに、電圧が印加されることで前記対象物を前記載置面の側に吸着させるための静電気力を生じさせるための吸着用電極を前記第1構造体の内部に備え、
前記第1層および前記第2層は導電性を有することを特徴とする載置用部材。 - 前記第2層は、前記本体部の内部に設けられ、前記載置面に垂直な断面視において、前記流路の高さの範囲内に配置されていることを特徴とする請求項1記載の載置用部材。
- 前記第2層は、平面視したときに、前記流路の最外周線の内側領域の、前記流路以外の部分の全体に設けられていることを特徴とする請求項1または2記載の載置用部材。
- 前記第1層および前記第2層は、同じ主成分を含んでいることを特徴とする請求項1〜3のいずれかに記載の載置用部材。
- 前記第1構造体は前記反対側の面に溝状の第1凹部を備えており、
前記流路の前記内面は、前記第1凹部の内面を含んで構成されていることを特徴とする請求項1〜4のいずれかに記載の載置用部材。 - 前記第2構造体は前記第1構造体と向かい合う面に溝状の第2凹部を備えており、前記流路の前記内面は、前記第2凹部の内面を含んで構成されていることを特徴とする請求項1〜5のいずれかに記載の載置用部材。
- 前記第1構造体は、前記載置面と反対側の面に溝状の第1凹部を備えており、前記第2構造体は前記第1構造体と向かい合う面に溝状の第2凹部を備えており、前記流路の前記
内面は、前記第1凹部の内面と前記第2凹部の内面を含んで構成されていることを特徴とする1〜6のいずれかに記載の載置用部材。 - 前記第1層は、金(Au)を主成分とすることを特徴とする請求項1〜7のいずれかに記載の載置用部材。
- 前記第1層は、前記流路の内面の全体に設けられていることを特徴とする請求項1〜8のいずれかに記載の載置用部材。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014148850 | 2014-07-22 | ||
JP2014148850 | 2014-07-22 | ||
PCT/JP2015/070862 WO2016013589A1 (ja) | 2014-07-22 | 2015-07-22 | 載置用部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016013589A1 JPWO2016013589A1 (ja) | 2017-06-01 |
JP6382979B2 true JP6382979B2 (ja) | 2018-08-29 |
Family
ID=55163113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016535957A Active JP6382979B2 (ja) | 2014-07-22 | 2015-07-22 | 載置用部材 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10410898B2 (ja) |
EP (1) | EP3196926B1 (ja) |
JP (1) | JP6382979B2 (ja) |
WO (1) | WO2016013589A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11229968B2 (en) * | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
CN108604549B (zh) * | 2016-02-08 | 2023-09-12 | 应用材料公司 | 用于化学抛光的系统、装置和方法 |
JP6633931B2 (ja) * | 2016-02-10 | 2020-01-22 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
US10490435B2 (en) * | 2018-02-07 | 2019-11-26 | Applied Materials, Inc. | Cooling element for an electrostatic chuck assembly |
DE102020104907A1 (de) | 2020-02-25 | 2021-08-26 | Berliner Glas GmbH | Verfahren zur Herstellung eines Bauelements durch atomares Diffusionsbonden |
EP4123373A1 (en) * | 2021-07-21 | 2023-01-25 | Koninklijke Philips N.V. | Imprinting apparatus |
EP4123374A1 (en) * | 2021-07-21 | 2023-01-25 | Koninklijke Philips N.V. | Imprinting apparatus |
KR20240035585A (ko) * | 2021-07-21 | 2024-03-15 | 코닌클리케 필립스 엔.브이. | 임프린팅 장치 |
EP4123378A1 (en) * | 2021-07-21 | 2023-01-25 | Koninklijke Philips N.V. | Imprinting apparatus |
WO2023248406A1 (ja) * | 2022-06-23 | 2023-12-28 | 株式会社日立ハイテク | プラズマ処理装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1238755B1 (en) | 1999-06-15 | 2010-11-10 | Ibiden Co., Ltd. | Table of wafer polisher, method of polishing wafer, and method of manufacturing semiconductor wafer |
JP2001096454A (ja) * | 1999-09-29 | 2001-04-10 | Ibiden Co Ltd | ウェハ研磨装置用テーブル、セラミックス構造体 |
JP2000354957A (ja) * | 1999-06-15 | 2000-12-26 | Ibiden Co Ltd | ウェハ研磨装置用テーブル、半導体ウェハの研磨方法、半導体ウェハの製造方法、積層セラミックス構造体 |
EP1205451A1 (en) * | 2000-03-07 | 2002-05-15 | Ibiden Co., Ltd. | Ceramic substrate for manufacture/inspection of semiconductor |
KR100505035B1 (ko) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | 기판을 지지하기 위한 정전척 |
JP4916326B2 (ja) | 2007-01-31 | 2012-04-11 | 東京エレクトロン株式会社 | 温度モニタ用基板の検査装置及び検査方法 |
JP4929150B2 (ja) * | 2007-12-27 | 2012-05-09 | 新光電気工業株式会社 | 静電チャック及び基板温調固定装置 |
WO2012067239A1 (ja) | 2010-11-19 | 2012-05-24 | 京セラ株式会社 | 載置用部材およびこれを用いた温度制御載置装置 |
WO2013051713A1 (ja) * | 2011-10-05 | 2013-04-11 | 京セラ株式会社 | 試料保持具 |
JP6162558B2 (ja) * | 2012-09-27 | 2017-07-12 | 京セラ株式会社 | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
JP6034402B2 (ja) * | 2012-11-29 | 2016-11-30 | 京セラ株式会社 | 静電チャック |
-
2015
- 2015-07-22 WO PCT/JP2015/070862 patent/WO2016013589A1/ja active Application Filing
- 2015-07-22 US US15/327,497 patent/US10410898B2/en active Active
- 2015-07-22 JP JP2016535957A patent/JP6382979B2/ja active Active
- 2015-07-22 EP EP15825375.7A patent/EP3196926B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10410898B2 (en) | 2019-09-10 |
EP3196926B1 (en) | 2021-06-16 |
JPWO2016013589A1 (ja) | 2017-06-01 |
EP3196926A1 (en) | 2017-07-26 |
WO2016013589A1 (ja) | 2016-01-28 |
EP3196926A4 (en) | 2018-04-11 |
US20170186641A1 (en) | 2017-06-29 |
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