JP6435247B2 - 静電チャック装置及び静電チャック装置の製造方法 - Google Patents
静電チャック装置及び静電チャック装置の製造方法 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description
以下、図1〜図4に従って第1実施形態を説明する。
図1(a)に示すように、静電チャック装置10は、ベースプレート20と、接着層30と、静電チャック(ESC)基板40と、フォーカスリング50とを有している。静電チャック基板40は、接着層30によりベースプレート20の上面20Aに接着されている。
接着層30は、ベースプレート20の上面20Aに静電チャック基板40を接着する。また、接着層30は、静電チャック基板40の熱をベースプレート20に伝導する。すなわち、接着層30は、ベースプレート20と静電チャック基板40とを接着する接着剤として機能するとともに、熱伝導部材としても機能する。接着層30の材料としては、熱伝導率の高い材料が好ましい。例えば、接着層30の材料としては、シリコーン樹脂を用いることができる。なお、接着層30の厚さは、例えば、0.05〜2.0mm程度とすることができる。
また、突出部52の内径は、載置領域A1に載置される基板Wの外径よりも大径に設定されている。このため、載置領域A1は、突出部52(フォーカスリング50)から露出されている。さらに、図1(b)に示すように、突出部52の内周部(先端部)は、溝部41X及び保護層60の外周部と平面視で重なる位置に設けられている。そして、突出部52の下面の内周部は、保護層60の上面60Aの外周部に当接している。なお、突出部52の厚さは、例えば、基板Wと略同じ厚さに設定されている。例えば、突出部52の厚さは、0.5〜1mm程度とすることができる。
まず、図3(a)に示すように、ベースプレート20と、静電電極42及び発熱体43を内蔵した静電チャック基板40とを準備する。これらベースプレート20及び静電チャック基板40は、公知の製造方法により製造することができるため、ここでは詳細な説明を省略する。例えば、静電チャック基板40は、タングステンを印刷したグリーンシートを積層後、焼成して形成される。続いて、ベースプレート20の上面20Aに、接着層30により静電チャック基板40を接着する。
以上説明した本実施形態によれば、以下の効果を奏することができる。
(1)フォーカスリング50と載置領域A1との間の領域に露出する静電チャック基板40(基板本体41)の上面41Aに溝部41Xを形成し、その溝部41Xを充填する保護層60を形成した。この保護層60によって、静電チャック基板40の上面41Aにプラズマが照射されることを好適に抑制できる。このため、侵食性の高いフッ素系や塩素系のプロセスガスを用いた環境下において、静電チャック装置10に吸着保持された基板Wに対してプラズマ処理を繰り返し実施した場合であっても、プラズマ照射によって静電チャック基板40が侵食されることを好適に抑制できる。これにより、静電チャック基板40の寿命が短くなることを抑制でき、ひいては静電チャック装置10の寿命が短くなることを抑制できる。
以下、図5に従って第2実施形態を説明する。この実施形態の静電チャック装置10Aは、静電チャック基板40Aの構造が上記第1実施形態の静電チャック基板40と異なっている。以下、第1実施形態との相違点を中心に説明する。なお、先の図1〜図4に示した部材と同様の部材にはそれぞれ同一の符号を付して示し、それら各要素についての詳細な説明は省略する。
基板本体45は、ベースプレート20の上面20Aに接着層30を介して接着された本体部46と、本体部46の上面46Aから上方に突出し、本体部46よりも平面形状が小さく形成された保持台47とを有している。
(他の実施形態)
なお、上記実施形態は、これを適宜変更した以下の態様にて実施することもできる。
10X 凹部
20 ベースプレート
30 接着層
40,40A 静電チャック基板
41,45 基板本体
46 本体部
47 保持台
41X,46X 溝部
42 静電電極
50 フォーカスリング
60 保護層
A1 載置領域
W 基板
Claims (9)
- ベースプレートと、
前記ベースプレートの上面に接合された静電チャック基板と、
前記静電チャック基板に内設された静電電極と、
前記ベースプレートの上面に設けられ、前記静電チャック基板の側面を被覆するフォーカスリングと、
前記フォーカスリングと、吸着対象物が載置される載置領域との間の領域に露出する前記静電チャック基板の表面に形成された溝部と、
前記溝部に充填された保護層と、を有し、
前記溝部は、前記静電電極と平面視で重ならない位置に設けられ、
前記保護層は、前記静電チャック基板を構成する材料よりも耐プラズマ性が高い材料からなることを特徴とする静電チャック装置。 - 前記溝部の内側面は、前記静電チャック基板の前記表面側の開口端から前記溝部の内側に向かって傾斜した傾斜面であることを特徴とする請求項1に記載の静電チャック装置。
- 前記保護層の外周部は、前記フォーカスリングの内周部と平面視で重なる位置に配置されていることを特徴とする請求項1又は2に記載の静電チャック装置。
- 前記静電チャック基板の側面と、前記静電チャック基板から露出された前記ベースプレートの上面とによって構成され、前記静電チャック基板の外周に沿って設けられた凹部を有し、
前記フォーカスリングは、前記凹部に嵌合して設けられ、前記静電チャック基板の側面全面を被覆するとともに、前記載置領域を有する前記静電チャック基板の上面の外周部を被覆し、
前記溝部は、前記静電チャック基板の前記上面を被覆する前記フォーカスリングの内周縁と、前記載置領域の外周縁との間の領域に露出する前記静電チャック基板の前記上面に設けられていることを特徴とする請求項1〜3のいずれか一項に記載の静電チャック装置。 - 前記保護層の内周部は、前記載置領域の外周部と平面視で重なる位置に配置されていることを特徴とする請求項4に記載の静電チャック装置。
- 前記静電チャック基板は、接着層を介して前記ベースプレートに接着された本体部と、前記本体部の上面から上方に突出し、前記本体部よりも平面形状が小さく形成され、上面全面が前記載置領域となる保持台とを有し、
前記本体部の側面と、前記本体部から露出された前記ベースプレートの上面とによって構成され、前記本体部の外周に沿って設けられた凹部を有し、
前記フォーカスリングは、前記凹部に嵌合して設けられ、前記本体部の側面全面を被覆するとともに、前記本体部の上面の外周部を被覆し、
前記溝部は、前記本体部の上面を被覆する前記フォーカスリングの内周縁と、前記保持台の側面との間の領域に露出する前記本体部の上面に設けられていることを特徴とする請求項1〜3のいずれか一項に記載の静電チャック装置。 - 前記保護層は、前記保持台の側面を被覆していることを特徴とする請求項6に記載の静電チャック装置。
- ベースプレートの上面に静電チャック基板を接合する工程と、
前記静電チャック基板に溝部を形成する工程と、
前記静電チャック基板を構成する材料よりも耐プラズマ性が高い材料からなる保護層を前記溝部に充填する工程と、
前記ベースプレートの上面に、前記静電チャック基板の側面を被覆するフォーカスリングを固定する工程と、を有し、
前記溝部は、前記フォーカスリングが前記ベースプレートに固定された場合に、該フォーカスリングと、吸着対象物が載置される載置領域との間の領域に露出される前記静電チャック基板の表面に形成されることを特徴とする静電チャック装置の製造方法。 - 前記保護層を前記溝部に充填する工程は、
前記溝部内に、溶射法、コールドスプレー法、エアロゾルデポジション法及び焼結法のいずれか1つの方法により前記保護層を形成する工程と、
前記静電チャック基板の前記表面から上方に突出した前記保護層を研磨する工程と、を有することを特徴とする請求項8に記載の静電チャック装置の製造方法。
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