JP6497248B2 - ウェハ保持体 - Google Patents
ウェハ保持体 Download PDFInfo
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- JP6497248B2 JP6497248B2 JP2015139738A JP2015139738A JP6497248B2 JP 6497248 B2 JP6497248 B2 JP 6497248B2 JP 2015139738 A JP2015139738 A JP 2015139738A JP 2015139738 A JP2015139738 A JP 2015139738A JP 6497248 B2 JP6497248 B2 JP 6497248B2
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- metal
- electrode
- wafer holder
- terminal
- ceramic
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- 229910052751 metal Inorganic materials 0.000 claims description 113
- 239000002184 metal Substances 0.000 claims description 113
- 239000000919 ceramic Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 18
- 238000007789 sealing Methods 0.000 description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BFMWBLSAZJTDOV-UHFFFAOYSA-N [Fe].[Cu].[Ni].[W] Chemical compound [Fe].[Cu].[Ni].[W] BFMWBLSAZJTDOV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
11、21、31、41 基板
11a、21a、31a、41a ウェハ載置面
12、22、32、42 RF電極
13、23、33、43 金属端子
14、24、34、44 接続端子
14a、24a、34a、44a セラミックス部材
14b、24b、34b、44b 金属層
15、25、35、45 ヒータ電極
16、26、36、46 金属部材
37、47 封止部材
38、48 ガラス
49 環状部材
130、230、330 ウェハ保持体
140、240、340 ウェハ保持体
233、333 金属端子
233a、333a フランジ部
A 隅部
Claims (4)
- ウェハ載置面を上面側に備えた略円板形状のセラミックス製の基体と、前記基体の内部に埋設された電極と、前記基体の下面側から挿入された金属端子と、これら電極と金属端子とを互いに電気的に導通させる接続端子及び金属部材とを有するウェハ保持体であって、
前記接続端子は、前記基体と同一材質の切頭円錐形状を有するセラミックス部材と、その側面を全面に亘って覆う金属層とからなり、前記接続端子の上端部において前記金属層は前記電極に接続しており、前記接続端子の下端部において前記金属層は前記金属部材に接続しており、前記金属部材は前記金属層が接続している部分の反対側において前記金属端子に接続しているウェハ保持体。 - 前記金属部材は円板状であり、前記金属部材の外径が前記接続端子の下端部側側面の外径よりも大きい、請求項1に記載のウェハ保持体。
- 前記金属端子が前記基体又は前記金属部材に螺合している、請求項1又は請求項2に記載のウェハ保持体。
- 前記電極が、RFプラズマ形成用電極、ヒータ電極、又は静電チャック用電極である、請求項1〜請求項3のいずれか1項に記載のウェハ保持体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139738A JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
KR1020237005352A KR102687900B1 (ko) | 2015-07-13 | 2016-07-01 | 웨이퍼 유지체 |
KR1020187000275A KR102501916B1 (ko) | 2015-07-13 | 2016-07-01 | 웨이퍼 유지체 |
PCT/JP2016/069570 WO2017010307A1 (ja) | 2015-07-13 | 2016-07-01 | ウェハ保持体 |
US15/739,061 US10886157B2 (en) | 2015-07-13 | 2016-07-01 | Wafer holding unit |
US16/952,092 US12033880B2 (en) | 2015-07-13 | 2020-11-19 | Wafer holding body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139738A JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019012805A Division JP6699765B2 (ja) | 2019-01-29 | 2019-01-29 | ウェハ保持体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017022284A JP2017022284A (ja) | 2017-01-26 |
JP6497248B2 true JP6497248B2 (ja) | 2019-04-10 |
Family
ID=57757334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015139738A Active JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10886157B2 (ja) |
JP (1) | JP6497248B2 (ja) |
KR (2) | KR102687900B1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6674800B2 (ja) * | 2016-03-07 | 2020-04-01 | 日本特殊陶業株式会社 | 基板支持装置 |
US11127605B2 (en) * | 2016-11-29 | 2021-09-21 | Sumitomo Electric Industries, Ltd. | Wafer holder |
JP6788125B2 (ja) * | 2017-02-10 | 2020-11-18 | エーエスエムエル ホールディング エヌ.ブイ. | レチクルクランプデバイス |
JP7184034B2 (ja) * | 2017-03-28 | 2022-12-06 | 住友電気工業株式会社 | ウエハ保持体 |
KR102578539B1 (ko) * | 2017-07-28 | 2023-09-13 | 스미토모덴키고교가부시키가이샤 | 샤워 헤드 및 그 제조 방법 |
JP7109258B2 (ja) * | 2018-05-24 | 2022-07-29 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JP7403215B2 (ja) * | 2018-09-14 | 2023-12-22 | 東京エレクトロン株式会社 | 基板支持体及び基板処理装置 |
JP7170745B2 (ja) | 2018-10-30 | 2022-11-14 | 京セラ株式会社 | 基板状構造体及びヒータシステム |
CN111326468A (zh) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 静电吸盘装置 |
US20220146948A1 (en) * | 2019-03-13 | 2022-05-12 | Asml Holding N.V. | Electrostatic clamp for a lithographic apparatus |
US20220122817A1 (en) * | 2020-10-15 | 2022-04-21 | Applied Materials, Inc. | Semiconductor substrate support power transmission components |
JP7414747B2 (ja) * | 2021-01-20 | 2024-01-16 | 日本碍子株式会社 | ウエハ載置台及びその製造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
DE69432383D1 (de) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
US5817406A (en) * | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
JP3790000B2 (ja) | 1997-01-27 | 2006-06-28 | 日本碍子株式会社 | セラミックス部材と電力供給用コネクターとの接合構造 |
JP3954177B2 (ja) | 1997-01-29 | 2007-08-08 | 日本碍子株式会社 | 金属部材とセラミックス部材との接合構造およびその製造方法 |
US6098568A (en) * | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
US6019164A (en) * | 1997-12-31 | 2000-02-01 | Temptronic Corporation | Workpiece chuck |
JP2003045952A (ja) * | 2001-05-25 | 2003-02-14 | Tokyo Electron Ltd | 載置装置及びその製造方法並びにプラズマ処理装置 |
JP3966376B2 (ja) | 2001-09-11 | 2007-08-29 | 住友電気工業株式会社 | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ |
US7252872B2 (en) * | 2003-01-29 | 2007-08-07 | Ngk Insulators, Ltd. | Joined structures of ceramics |
JP2005026120A (ja) * | 2003-07-03 | 2005-01-27 | Ibiden Co Ltd | セラミックヒータ |
US7098428B1 (en) * | 2004-02-04 | 2006-08-29 | Brent Elliot | System and method for an improved susceptor |
JP4908021B2 (ja) * | 2005-03-07 | 2012-04-04 | 日本特殊陶業株式会社 | 静電チャック、静電チャック装置、静電チャックの製造方法、真空チャック、真空チャック装置、真空チャックの製造方法、セラミックヒーター、セラミックヒーター装置、及びセラミックヒーターの製造方法 |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP2006191124A (ja) * | 2006-01-24 | 2006-07-20 | Sumitomo Electric Ind Ltd | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ |
JP2007258610A (ja) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | アルミナ焼成体 |
JP4421595B2 (ja) * | 2006-11-16 | 2010-02-24 | 日本碍子株式会社 | 加熱装置 |
JP4962901B2 (ja) * | 2006-12-05 | 2012-06-27 | Toto株式会社 | 静電機能部材とその製造方法 |
JP5029257B2 (ja) | 2007-01-17 | 2012-09-19 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
KR20110046586A (ko) * | 2007-01-17 | 2011-05-04 | 도쿄엘렉트론가부시키가이샤 | 탑재대 구조 및 처리 장치 |
JP4858319B2 (ja) | 2007-06-07 | 2012-01-18 | 住友電気工業株式会社 | ウェハ保持体の電極接続構造 |
JP2010111523A (ja) * | 2008-11-05 | 2010-05-20 | Kurosaki Harima Corp | 通電体を内蔵するセラミックス部材とその製造方法 |
JP5961917B2 (ja) * | 2011-03-24 | 2016-08-03 | 住友電気工業株式会社 | ウェハ保持体 |
JP5339162B2 (ja) * | 2011-03-30 | 2013-11-13 | Toto株式会社 | 静電チャック |
JP5348439B2 (ja) * | 2011-09-30 | 2013-11-20 | Toto株式会社 | 静電チャック |
JP5950409B2 (ja) * | 2013-05-13 | 2016-07-13 | クアーズテック株式会社 | 電極埋め込み石英部材及びその製造方法 |
KR101488806B1 (ko) * | 2013-06-04 | 2015-02-04 | (주)티티에스 | 기판 지지 유닛 |
US20150380526A1 (en) * | 2014-06-27 | 2015-12-31 | Applied Materials, Inc. | Methods for forming fin structures with desired dimensions for 3d structure semiconductor applications |
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