JP2017022284A - ウェハ保持体 - Google Patents
ウェハ保持体 Download PDFInfo
- Publication number
- JP2017022284A JP2017022284A JP2015139738A JP2015139738A JP2017022284A JP 2017022284 A JP2017022284 A JP 2017022284A JP 2015139738 A JP2015139738 A JP 2015139738A JP 2015139738 A JP2015139738 A JP 2015139738A JP 2017022284 A JP2017022284 A JP 2017022284A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- metal
- wafer holder
- substrate
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 116
- 239000000919 ceramic Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BFMWBLSAZJTDOV-UHFFFAOYSA-N [Fe].[Cu].[Ni].[W] Chemical compound [Fe].[Cu].[Ni].[W] BFMWBLSAZJTDOV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
11、21、31、41 基板
11a、21a、31a、41a ウェハ載置面
12、22、32、42 RF電極
13、23、33、43 金属端子
14、24、34、44 接続端子
14a、24a、34a、44a セラミックス部材
14b、24b、34b、44b 金属層
15、25、35、45 ヒータ電極
16、26、36、46 金属部材
37、47 封止部材
38、48 ガラス
49 環状部材
130、230、330 ウェハ保持体
140、240、340 ウェハ保持体
233、333 金属端子
233a、333a フランジ部
A 隅部
Claims (4)
- ウェハ載置面を上面側に備えた略円板形状のセラミックス製の基体と、前記基体の内部に埋設された電極と、前記基体の下面側から挿入された金属端子と、これら電極と金属端子とを互いに電気的に導通させる接続端子とを有するウェハ保持体であって、
前記接続端子は、前記基体と同一材質のセラミックス部材と、その側面を全面に亘って覆う金属層とからなり、前記金属層の上端部は前記電極に接続しており、前記金属層の下端部は前記金属端子に金属部材を介して接続しているウェハ保持体。 - 前記金属端子が前記基体又は前記金属部材に螺合している、請求項1に記載のウェハ保持体。
- 前記セラミックス部材が切頭円錐形状を有している、請求項1又は請求項2に記載のウェハ保持体。
- 前記電極が、RFプラズマ形成用電極、ヒータ電極、又は静電チャック用電極である、請求項1〜請求項3のいずれか1項に記載のウェハ保持体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139738A JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
US15/739,061 US10886157B2 (en) | 2015-07-13 | 2016-07-01 | Wafer holding unit |
PCT/JP2016/069570 WO2017010307A1 (ja) | 2015-07-13 | 2016-07-01 | ウェハ保持体 |
KR1020237005352A KR20230030011A (ko) | 2015-07-13 | 2016-07-01 | 웨이퍼 유지체 |
KR1020187000275A KR102501916B1 (ko) | 2015-07-13 | 2016-07-01 | 웨이퍼 유지체 |
US16/952,092 US20210074568A1 (en) | 2015-07-13 | 2020-11-19 | Wafer holding body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015139738A JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019012805A Division JP6699765B2 (ja) | 2019-01-29 | 2019-01-29 | ウェハ保持体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017022284A true JP2017022284A (ja) | 2017-01-26 |
JP6497248B2 JP6497248B2 (ja) | 2019-04-10 |
Family
ID=57757334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015139738A Active JP6497248B2 (ja) | 2015-07-13 | 2015-07-13 | ウェハ保持体 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10886157B2 (ja) |
JP (1) | JP6497248B2 (ja) |
KR (2) | KR20230030011A (ja) |
WO (1) | WO2017010307A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019021713A1 (ja) * | 2017-07-28 | 2019-01-31 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
JP2019204903A (ja) * | 2018-05-24 | 2019-11-28 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JPWO2018179891A1 (ja) * | 2017-03-28 | 2020-02-06 | 住友電気工業株式会社 | ウエハ保持体 |
WO2020054508A1 (ja) * | 2018-09-14 | 2020-03-19 | 東京エレクトロン株式会社 | 基板支持体及び基板処理装置 |
US11127605B2 (en) * | 2016-11-29 | 2021-09-21 | Sumitomo Electric Industries, Ltd. | Wafer holder |
US11856659B2 (en) | 2018-10-30 | 2023-12-26 | Kyocera Corporation | Board-like structure and heater system |
JP7414747B2 (ja) | 2021-01-20 | 2024-01-16 | 日本碍子株式会社 | ウエハ載置台及びその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6674800B2 (ja) * | 2016-03-07 | 2020-04-01 | 日本特殊陶業株式会社 | 基板支持装置 |
WO2018145866A1 (en) * | 2017-02-10 | 2018-08-16 | Asml Holding N.V. | Reticle clamping device |
CN111326468A (zh) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 静电吸盘装置 |
CN113557475A (zh) * | 2019-03-13 | 2021-10-26 | Asml控股股份有限公司 | 用于光刻设备的静电夹具 |
US20220122817A1 (en) * | 2020-10-15 | 2022-04-21 | Applied Materials, Inc. | Semiconductor substrate support power transmission components |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045952A (ja) * | 2001-05-25 | 2003-02-14 | Tokyo Electron Ltd | 載置装置及びその製造方法並びにプラズマ処理装置 |
JP2005026120A (ja) * | 2003-07-03 | 2005-01-27 | Ibiden Co Ltd | セラミックヒータ |
JP2006191124A (ja) * | 2006-01-24 | 2006-07-20 | Sumitomo Electric Ind Ltd | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ |
JP2006287213A (ja) * | 2005-03-07 | 2006-10-19 | Ngk Spark Plug Co Ltd | 静電チャック、静電チャック装置、静電チャックの製造方法、真空チャック、真空チャック装置、真空チャックの製造方法、セラミックヒーター、セラミックヒーター装置、及びセラミックヒーターの製造方法 |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP2007258610A (ja) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | アルミナ焼成体 |
JP2008141102A (ja) * | 2006-12-05 | 2008-06-19 | Toto Ltd | 静電機能部材とその製造方法 |
JP2012212735A (ja) * | 2011-03-30 | 2012-11-01 | Toto Ltd | 静電チャック |
JP2013084938A (ja) * | 2011-09-30 | 2013-05-09 | Toto Ltd | 静電チャック |
JP2014222697A (ja) * | 2013-05-13 | 2014-11-27 | コバレントマテリアル株式会社 | 電極埋め込み石英部材及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
DE69432383D1 (de) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
US5817406A (en) * | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
JP3790000B2 (ja) | 1997-01-27 | 2006-06-28 | 日本碍子株式会社 | セラミックス部材と電力供給用コネクターとの接合構造 |
JP3954177B2 (ja) | 1997-01-29 | 2007-08-08 | 日本碍子株式会社 | 金属部材とセラミックス部材との接合構造およびその製造方法 |
US6098568A (en) * | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
US6019164A (en) * | 1997-12-31 | 2000-02-01 | Temptronic Corporation | Workpiece chuck |
JP3966376B2 (ja) | 2001-09-11 | 2007-08-29 | 住友電気工業株式会社 | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ |
US7098428B1 (en) * | 2004-02-04 | 2006-08-29 | Brent Elliot | System and method for an improved susceptor |
JP4421595B2 (ja) * | 2006-11-16 | 2010-02-24 | 日本碍子株式会社 | 加熱装置 |
KR20110046586A (ko) * | 2007-01-17 | 2011-05-04 | 도쿄엘렉트론가부시키가이샤 | 탑재대 구조 및 처리 장치 |
JP4858319B2 (ja) | 2007-06-07 | 2012-01-18 | 住友電気工業株式会社 | ウェハ保持体の電極接続構造 |
JP2010111523A (ja) * | 2008-11-05 | 2010-05-20 | Kurosaki Harima Corp | 通電体を内蔵するセラミックス部材とその製造方法 |
JP5961917B2 (ja) | 2011-03-24 | 2016-08-03 | 住友電気工業株式会社 | ウェハ保持体 |
US20150380526A1 (en) * | 2014-06-27 | 2015-12-31 | Applied Materials, Inc. | Methods for forming fin structures with desired dimensions for 3d structure semiconductor applications |
-
2015
- 2015-07-13 JP JP2015139738A patent/JP6497248B2/ja active Active
-
2016
- 2016-07-01 US US15/739,061 patent/US10886157B2/en active Active
- 2016-07-01 WO PCT/JP2016/069570 patent/WO2017010307A1/ja active Application Filing
- 2016-07-01 KR KR1020237005352A patent/KR20230030011A/ko not_active Application Discontinuation
- 2016-07-01 KR KR1020187000275A patent/KR102501916B1/ko active IP Right Grant
-
2020
- 2020-11-19 US US16/952,092 patent/US20210074568A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003045952A (ja) * | 2001-05-25 | 2003-02-14 | Tokyo Electron Ltd | 載置装置及びその製造方法並びにプラズマ処理装置 |
JP2005026120A (ja) * | 2003-07-03 | 2005-01-27 | Ibiden Co Ltd | セラミックヒータ |
JP2006287213A (ja) * | 2005-03-07 | 2006-10-19 | Ngk Spark Plug Co Ltd | 静電チャック、静電チャック装置、静電チャックの製造方法、真空チャック、真空チャック装置、真空チャックの製造方法、セラミックヒーター、セラミックヒーター装置、及びセラミックヒーターの製造方法 |
JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
JP2006191124A (ja) * | 2006-01-24 | 2006-07-20 | Sumitomo Electric Ind Ltd | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ |
JP2007258610A (ja) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | アルミナ焼成体 |
JP2008141102A (ja) * | 2006-12-05 | 2008-06-19 | Toto Ltd | 静電機能部材とその製造方法 |
JP2012212735A (ja) * | 2011-03-30 | 2012-11-01 | Toto Ltd | 静電チャック |
JP2013084938A (ja) * | 2011-09-30 | 2013-05-09 | Toto Ltd | 静電チャック |
JP2014222697A (ja) * | 2013-05-13 | 2014-11-27 | コバレントマテリアル株式会社 | 電極埋め込み石英部材及びその製造方法 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11127605B2 (en) * | 2016-11-29 | 2021-09-21 | Sumitomo Electric Industries, Ltd. | Wafer holder |
US11732359B2 (en) | 2017-03-28 | 2023-08-22 | Sumitomo Electric Industries, Ltd. | Wafer holder |
JPWO2018179891A1 (ja) * | 2017-03-28 | 2020-02-06 | 住友電気工業株式会社 | ウエハ保持体 |
JP7184034B2 (ja) | 2017-03-28 | 2022-12-06 | 住友電気工業株式会社 | ウエハ保持体 |
US11239057B2 (en) | 2017-07-28 | 2022-02-01 | Sumitomo Electric Industries, Ltd. | Showerhead and method for manufacturing the same |
KR20200037217A (ko) * | 2017-07-28 | 2020-04-08 | 스미토모덴키고교가부시키가이샤 | 샤워 헤드 및 그 제조 방법 |
JPWO2019021713A1 (ja) * | 2017-07-28 | 2020-05-28 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
WO2019021713A1 (ja) * | 2017-07-28 | 2019-01-31 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
JP7052796B2 (ja) | 2017-07-28 | 2022-04-12 | 住友電気工業株式会社 | シャワーヘッド及びその製造方法 |
KR102578539B1 (ko) | 2017-07-28 | 2023-09-13 | 스미토모덴키고교가부시키가이샤 | 샤워 헤드 및 그 제조 방법 |
JP7109258B2 (ja) | 2018-05-24 | 2022-07-29 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JP2019204903A (ja) * | 2018-05-24 | 2019-11-28 | 日本特殊陶業株式会社 | 電極埋設部材の製造方法 |
JP2020047638A (ja) * | 2018-09-14 | 2020-03-26 | 東京エレクトロン株式会社 | 基板支持体及び基板処理装置 |
WO2020054508A1 (ja) * | 2018-09-14 | 2020-03-19 | 東京エレクトロン株式会社 | 基板支持体及び基板処理装置 |
US11856659B2 (en) | 2018-10-30 | 2023-12-26 | Kyocera Corporation | Board-like structure and heater system |
JP7414747B2 (ja) | 2021-01-20 | 2024-01-16 | 日本碍子株式会社 | ウエハ載置台及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10886157B2 (en) | 2021-01-05 |
US20180174878A1 (en) | 2018-06-21 |
KR20180027495A (ko) | 2018-03-14 |
WO2017010307A1 (ja) | 2017-01-19 |
KR20230030011A (ko) | 2023-03-03 |
KR102501916B1 (ko) | 2023-02-20 |
US20210074568A1 (en) | 2021-03-11 |
JP6497248B2 (ja) | 2019-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6497248B2 (ja) | ウェハ保持体 | |
JP6308871B2 (ja) | 静電チャック及び半導体・液晶製造装置 | |
JP4858319B2 (ja) | ウェハ保持体の電極接続構造 | |
EP1300871A2 (en) | Semiconductor processing apparatus and electrode member therefor | |
JP4275682B2 (ja) | 静電チャック | |
JP6699765B2 (ja) | ウェハ保持体 | |
KR101397133B1 (ko) | 정전척의 제조방법 | |
JP2002141404A (ja) | 電極内蔵体及びこれを用いたウエハ支持部材 | |
CN108428661B (zh) | 一种用于真空处理装置的基片承载台及其制造方法 | |
JP5942380B2 (ja) | 半導体製造装置用ウエハ保持体 | |
JP5961917B2 (ja) | ウェハ保持体 | |
JP2003086663A (ja) | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ | |
JP7052796B2 (ja) | シャワーヘッド及びその製造方法 | |
WO2019008889A1 (ja) | 半導体基板加熱用の基板載置台 | |
JP2002141403A (ja) | ウエハ支持部材 | |
JP2008153701A (ja) | 静電チャック | |
JP2004259805A (ja) | 静電チャック | |
JP6483533B2 (ja) | 試料保持具およびこれを用いたプラズマエッチング装置 | |
JP2006191124A (ja) | 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ | |
KR101397132B1 (ko) | 정전척의 제조방법 | |
US11735459B2 (en) | Electrostatic chuck | |
JP2024004894A (ja) | 保持装置 | |
JP2019040939A (ja) | ウエハ載置台 | |
JP2023177720A (ja) | 保持装置 | |
JP2012028539A (ja) | セラミックス接合体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20150713 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190212 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190225 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6497248 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |