JPWO2018179891A1 - ウエハ保持体 - Google Patents
ウエハ保持体 Download PDFInfo
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- JPWO2018179891A1 JPWO2018179891A1 JP2019508697A JP2019508697A JPWO2018179891A1 JP WO2018179891 A1 JPWO2018179891 A1 JP WO2018179891A1 JP 2019508697 A JP2019508697 A JP 2019508697A JP 2019508697 A JP2019508697 A JP 2019508697A JP WO2018179891 A1 JPWO2018179891 A1 JP WO2018179891A1
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- ceramic base
- mounting surface
- circuit
- wafer mounting
- wafer
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- 239000000919 ceramic Substances 0.000 claims abstract description 146
- 238000010438 heat treatment Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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Abstract
Description
前記導電部材は、前記ウエハ載置面と平行に設けられた回路部、前記ウエハ載置面と平行かつ前記ウエハ載置面と反対の方向に前記回路部と離間して設けられた引出部および前記回路部と前記引出部とを電気的に接続する接続部を含む。また前記セラミック基部は円板形状であってもよい。これにより、セラミック基部に埋設されているRF電極等の導電部材に対してその端子部から過度の電気的な負荷をかけることなく給電することができる。
筒状支持部12の両端部は例えば外側に屈曲したフランジ形状になっている。筒状支持部12の上端面をセラミック基部11の下面に対して焼結により接合してもよい。また、上記フランジ形状の屈曲部を貫通するネジ等の結合手段によって筒状支持部12をセラミック基部11の下面に接合してもよい。筒状支持部12の下端部については、上端部と同様にチャンバーの底面に接合してもよい。しかし、下端部は、クランプ等の結合手段により取外し自在に固定することが好ましい。
これによりウエハ載置面131aの上方のプラズマ雰囲気をよりきめ細かく制御することが可能になる。
11、21、31、121、131、221、321、421 セラミック基部
11a、21a、31a、221a ウエハ載置面
12、22、32、222 筒状支持部
13、23A、23B、33B、223A、223B 導電部材の組
14、24A、24B、34B、224A、224B、124A、124B、124C、124D、124E、134B、134C、134D、134E、224A、224B、324A、324B、324C、324D、424A、424B 回路部
34A、134A 第2回路部
15、25A、25B、35B、225A、225B、125A、125B、125C、125D、125E、135B、135C、135D、135E、225A、225B、325A、325B、325C、325D、425A、425B 引出部
16、26A、26B、36B、226A、226B、126A、126B、126C、126D、126E、136B、136C、136D、136E、226A、226B、326A、326B、326C、326D、426A、426B 接続部
17、27A、27B、37B、227A、227B 電極端子部
37A 第2電極端子部
Claims (9)
- ウエハ載置面を上面に有するセラミック基部と、
前記セラミック基部に埋設された導電部材と、を備え、
前記導電部材は、前記ウエハ載置面と平行に設けられた回路部と、前記ウエハ載置面と平行かつ前記ウエハ載置面と反対の方向に前記回路部と離間して設けられた引出部と、前記回路部と前記引出部とを電気的に接続する接続部と、を含む、
ウエハ保持体。 - 前記セラミック基部の下面を支持する筒状支持部と、前記引出部と接続される電極端子部とをさらに備え、
前記電極端子部の一部は前記セラミック基部の下面側から突出し、かつ、前記筒状支持部内に収容されている、請求項1に記載のウエハ保持体。 - 前記導電部材はRF電極又は抵抗発熱体を構成する、請求項1又は請求項2に記載のウエハ保持体。
- 複数の前記導電部材を備え、複数の前記導電部材はそれぞれがRF電極または抵抗発熱体を構成する、請求項1又は請求項2に記載のウエハ保持体。
- 前記セラミック基部に埋設され前記ウエハ載置面と平行に設けられた第2回路部と、
前記第2回路部と接続される第2電極端子部とを、さらに備え、
前記第2電極端子部の一部は前記セラミック基部の下面側から突出している、
請求項1〜請求項4のいずれか1項に記載のウエハ保持体。 - 前記第2回路部はRF電極又は抵抗発熱体又は静電チャック電極である、
請求項5に記載のウエハ保持体。 - 前記接続部は金属層で覆われたセラミック部材である、
請求項1〜請求項6のいずれか1項に記載のウエハ保持体。 - 前記セラミック基部は円板形状である、
請求項1〜7のいずれか1項に記載のウエハ保持体。 - 前記筒状支持部は円筒形状である、
請求項2に記載のウエハ保持体。
Priority Applications (1)
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JP2022186144A JP2023021139A (ja) | 2017-03-28 | 2022-11-22 | ウエハ保持体 |
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JP2017062458 | 2017-03-28 | ||
JP2017062458 | 2017-03-28 | ||
PCT/JP2018/004421 WO2018179891A1 (ja) | 2017-03-28 | 2018-02-08 | ウエハ保持体 |
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JP2022186144A Division JP2023021139A (ja) | 2017-03-28 | 2022-11-22 | ウエハ保持体 |
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JPWO2018179891A1 true JPWO2018179891A1 (ja) | 2020-02-06 |
JP7184034B2 JP7184034B2 (ja) | 2022-12-06 |
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US (2) | US11732359B2 (ja) |
JP (2) | JP7184034B2 (ja) |
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WO (1) | WO2018179891A1 (ja) |
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US11289355B2 (en) * | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
KR102655866B1 (ko) | 2018-01-31 | 2024-04-05 | 램 리써치 코포레이션 | 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리 |
US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
US11692267B2 (en) | 2020-12-31 | 2023-07-04 | Applied Materials, Inc. | Plasma induced modification of silicon carbide surface |
US20220243921A1 (en) * | 2021-01-29 | 2022-08-04 | Koninklijke Fabriek Inventum B.V. | Vehicle oven having an improved heating element |
JP7392887B1 (ja) | 2023-03-27 | 2023-12-06 | Toto株式会社 | 静電チャック |
Citations (9)
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JPH09213455A (ja) * | 1996-02-05 | 1997-08-15 | Kyocera Corp | ウエハ保持装置の給電構造 |
JP2002231798A (ja) * | 2001-01-31 | 2002-08-16 | Kyocera Corp | ウエハ支持部材及びその製造方法 |
JP2005277335A (ja) * | 2004-03-26 | 2005-10-06 | Kyocera Corp | ウェハ支持部材 |
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JP2013026312A (ja) * | 2011-07-19 | 2013-02-04 | Sumitomo Electric Ind Ltd | セラミックス電極からなる電極構造及びそれを備えたウエハ保持体 |
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JP2017022284A (ja) * | 2015-07-13 | 2017-01-26 | 住友電気工業株式会社 | ウェハ保持体 |
WO2018163935A1 (ja) * | 2017-03-06 | 2018-09-13 | 日本碍子株式会社 | ウエハ支持台 |
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US20230340668A1 (en) | 2023-10-26 |
WO2018179891A1 (ja) | 2018-10-04 |
KR20190129881A (ko) | 2019-11-20 |
KR102545967B1 (ko) | 2023-06-20 |
KR20230096124A (ko) | 2023-06-29 |
US11732359B2 (en) | 2023-08-22 |
US20200340102A1 (en) | 2020-10-29 |
JP7184034B2 (ja) | 2022-12-06 |
JP2023021139A (ja) | 2023-02-09 |
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