JP7403215B2 - 基板支持体及び基板処理装置 - Google Patents
基板支持体及び基板処理装置 Download PDFInfo
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- 239000002826 coolant Substances 0.000 description 2
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- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- H01L21/6833—Details of electrostatic chucks
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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Description
まず、本開示の一実施形態に係る基板処理装置10の構成の一例について、図1を参照しながら説明する。本実施形態では、基板処理装置10の一例として平行平板の容量結合型プラズマ処理装置を挙げる。ただし、基板処理装置10は、プラズマ処理装置に限られず、プラズマを使用しない熱を用いた処理装置や光を用いた処理装置等であってもよい。
次に、図2を参照して、一実施形態にかかる基板支持体2の要部構成について、比較例にかかる基板支持体と比較しながら説明する。図2(a)は比較例にかかる基板支持体192のチャック電極6aの給電部分を示す概略断面図である。図2(b)は本実施形態にかかる基板支持体2のチャック電極6aの給電部分を示す概略断面図である。図2では、説明の便宜上、ヒータ電極6cは省略している。
・給電端子30
金属(アルミニウム、チタン、ステンレス、銅等)
・接点板33
金属(アルミニウム、チタン、ステンレス、銅等)
・碍子26
セラミックス(アルミナ、ジルコニア等)
樹脂(べスペル、PEEK(ポリエーテルエーテルケトン)、PCTFE(ネオフロン)、PTFE(ポリテトラフルオロエチレン))
・C型のリング状部材31
樹脂(べスペル、PEEK、PCTFE、PTFE)
金属(アルミニウム、チタン、ステンレス、銅等)
特に、図6(a)に示すように、碍子26の内周側が金属部材26fで形成されていると、金属の給電端子30と碍子26の金属部材26fとの間で放電が発生する場合がある。一方、図6(b)に示すように、碍子26がセラミックスや樹脂等の絶縁体で形成されていると、金属の給電端子30と絶縁体の碍子26との間で放電は発生しない。以上から、碍子26は金属ではなく、絶縁体で形成されることが好ましい。
以上では、給電端子30を静電チャック6のチャック電極6aに接触させるように設け、直流電圧を給電する例を挙げて説明したが、これに限られない。例えば、給電端子30は、基板支持体2に設けられた静電チャック6側のヒータ電極6cに接触させ、ヒータ電源14からの交流電圧をヒータ電極6cに給電する際にも使用できる。よって、静電チャック6に設けられる電極は、チャック電極6aとヒータ電極6cとを含み、給電端子30は、チャック電極6aとヒータ電極6cの一方又は両方の給電に使用できる。
2 基板支持体
3 基台
4 支持台
5 エッジリング
6 静電チャック
6a チャック電極
6a1 接点部
6c ヒータ電極
10 基板処理装置
12 直流電源
14 ヒータ電源
15 処理ガス供給源
16 シャワーヘッド
22 ヒータ電極
26 碍子
27 コンタクトプローブ
27d バネ部材
30 給電端子
30d バネ部材
31 リング状部材
33 接点板
Claims (11)
- 基台と、
基板が載置される静電チャックと、
前記静電チャックに設けられる電極と、
前記電極の接点部と、
前記基台の上にて前記静電チャックと前記基台とを接着し、前記接点部を覆わない接着層と、
前記電極の接点部に固定されずに接触する給電端子と、
前記基台と前記接着層とを貫通する貫通口内に該給電端子を保持する抜け止め構造と、
を有し、
前記給電端子の末端部は、上下方向に伸縮可能なコンタクト部材に接続する、基板支持体。 - 基台と、
基板が載置される静電チャックと、
前記静電チャックに設けられる電極と、
前記電極の接点部と、
前記基台の上にて前記静電チャックと前記基台とを接着し、前記接点部を覆わない接着層と、
前記電極の接点部に固定されずに接触する給電端子と、
前記基台と前記接着層とを貫通する貫通口内に該給電端子を保持する抜け止め構造と、
を有し、
前記抜け止め構造は、前記給電端子の外周に装着されたリング状部材を有し、
前記リング状部材の外径は、前記貫通口の径のうちの一部よりも大きい、基板支持体。 - 基台と、
前記基台の上に配置され、基板が載置される静電チャックと、
前記静電チャックに設けられる電極と、
前記電極の接点部と、
前記基台の上にて前記静電チャックと前記基台とを接着し、前記接点部を覆わない接着層と、
前記電極の接点部に固定されずに接触する先端部と直流電圧が印加される末端部とを有する給電端子であって、前記基台を貫通する貫通口に設けられ、前記基台を貫通する長さを有する中空の碍子の内壁との間に前記碍子の上端から下端にわたって間を空けて前記碍子の内部に収容される、直流電圧が印加される前記給電端子と、
を有する基板支持体。 - 基台と、
前記基台の上に配置され、基板が載置される静電チャックと、
前記静電チャックに設けられる電極と、
前記電極の接点部と、
前記基台の上にて前記静電チャックと前記基台とを接着し、前記接点部を覆わない接着層と、
前記電極の接点部に固定されずに接触する先端部と直流電圧が印加される末端部とを有する給電端子であって、前記基台を貫通する貫通口に設けられた中空の碍子の内壁との間に前記碍子の上端から下端にわたって間を空けて前記碍子の内部に収容される、直流電圧が印加される前記給電端子と、
を有し、
前記給電端子の末端部は、上下方向に伸縮可能なコンタクト部材に接続する、基板支持体。 - 前記抜け止め構造は、前記給電端子の外周に装着されたリング状部材を有し、
前記リング状部材の外径は、前記貫通口の径のうちの一部よりも大きい、
請求項1に記載の基板支持体。 - 前記貫通口は、前記基台内に取り付けられた絶縁性の碍子により形成される、
請求項1又は2に記載の基板支持体。 - 前記給電端子の末端部は、上下方向に伸縮可能なコンタクト部材に接続する、
請求項1~3のいずれか一項に記載の基板支持体。 - 前記給電端子の先端部は、前記電極の表面又は該表面に取り付けられた接点板を前記電極の接点部として点接触する、
請求項1~7のいずれか一項に記載の基板支持体。 - 前記給電端子は、上下方向に伸縮可能なバネ構造を有する、
請求項1~8のいずれか一項に記載の基板支持体。 - 前記碍子の上端が前記接着層を介して前記静電チャックの裏面に接合される、
請求項3又は4に記載の基板支持体。 - 請求項1~10のいずれか一項に記載の基板支持体を備える基板処理装置。
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JP2018172696A JP7403215B2 (ja) | 2018-09-14 | 2018-09-14 | 基板支持体及び基板処理装置 |
CN201980057784.2A CN112640060A (zh) | 2018-09-14 | 2019-09-03 | 基板支承体及基板处理装置 |
US17/273,009 US20210327741A1 (en) | 2018-09-14 | 2019-09-03 | Substrate support and substrate processing apparatus |
PCT/JP2019/034582 WO2020054508A1 (ja) | 2018-09-14 | 2019-09-03 | 基板支持体及び基板処理装置 |
KR1020217006642A KR20210046689A (ko) | 2018-09-14 | 2019-09-03 | 기판 지지체 및 기판 처리 장치 |
TW108131772A TW202025368A (zh) | 2018-09-14 | 2019-09-04 | 基板支持體及基板處理裝置 |
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Citations (4)
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JP2011124377A (ja) | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | 静電チャック装置 |
JP2015222748A (ja) | 2014-05-22 | 2015-12-10 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP2015225952A5 (ja) | 2014-05-28 | 2017-02-09 | ||
JP7161803B2 (ja) | 2019-07-12 | 2022-10-27 | 株式会社北電子 | 遊技機 |
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JPH07161803A (ja) * | 1993-12-08 | 1995-06-23 | Tokyo Electron Ltd | アルミニウム部材とポリベンズイミダゾール部材との接合方法、静電チャックの電極構造およびその製造方法 |
JP2001210450A (ja) * | 2000-01-25 | 2001-08-03 | Kyocera Corp | ウエハ加熱装置 |
JP3993408B2 (ja) * | 2001-10-05 | 2007-10-17 | 株式会社巴川製紙所 | 静電チャック装置、その組立方法および静電チャック装置用部材 |
US20070215284A1 (en) * | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma processing apparatus and electrode assembly for plasma processing apparatus |
JP6001402B2 (ja) * | 2012-09-28 | 2016-10-05 | 日本特殊陶業株式会社 | 静電チャック |
JP6428456B2 (ja) * | 2014-04-09 | 2018-11-28 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6308871B2 (ja) | 2014-05-28 | 2018-04-11 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP6442296B2 (ja) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6287695B2 (ja) * | 2014-08-29 | 2018-03-07 | 住友大阪セメント株式会社 | 静電チャック装置及びその製造方法 |
JP6497248B2 (ja) * | 2015-07-13 | 2019-04-10 | 住友電気工業株式会社 | ウェハ保持体 |
CN108475658B (zh) * | 2016-01-19 | 2023-12-22 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
JP2017147278A (ja) * | 2016-02-15 | 2017-08-24 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
US10892179B2 (en) * | 2016-11-08 | 2021-01-12 | Lam Research Corporation | Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods |
US10504765B2 (en) * | 2017-04-24 | 2019-12-10 | Applied Materials, Inc. | Electrostatic chuck assembly having a dielectric filler |
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JP2011124377A (ja) | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | 静電チャック装置 |
JP2015222748A (ja) | 2014-05-22 | 2015-12-10 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP2015225952A5 (ja) | 2014-05-28 | 2017-02-09 | ||
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