WO2007136023A1 - ウエハ保持体とその製造方法及び半導体製造装置 - Google Patents
ウエハ保持体とその製造方法及び半導体製造装置 Download PDFInfo
- Publication number
- WO2007136023A1 WO2007136023A1 PCT/JP2007/060327 JP2007060327W WO2007136023A1 WO 2007136023 A1 WO2007136023 A1 WO 2007136023A1 JP 2007060327 W JP2007060327 W JP 2007060327W WO 2007136023 A1 WO2007136023 A1 WO 2007136023A1
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- WIPO (PCT)
- Prior art keywords
- wafer holder
- wafer
- semiconductor manufacturing
- manufacturing apparatus
- flow path
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Definitions
- Wafer holder manufacturing method thereof, and semiconductor manufacturing apparatus
- the present invention relates to a wafer holder used in a semiconductor manufacturing apparatus, and more specifically, a wafer holder for processing a wafer at a temperature lower than room temperature, and a semiconductor equipped with the wafer holder. It relates to a manufacturing apparatus.
- a film such as an insulating film or a conductor film is formed on the wafer surface by heating the wafer or generating plasma.
- Ceramic wafer holders are known as wafer holders for performing these processes, so-called susceptors.
- Japanese Patent Publication No. 06-028258 discloses that a heating body is embedded in a ceramic wafer holder, and further a convex support portion is attached, and a highly reliable wafer holder. Is supposed to be obtained.
- Japanese Patent Laid-Open No. 2002-25913 discloses a susceptor in which a metal heat sink is attached to a ceramic heater, and it is assumed that the ceramic heater and the metal heat sink can be attached by a simple method.
- Patent Document 1 Japanese Patent Publication No. 06-028258
- Patent Document 2 JP 2002-025913 A
- the conventional wafer holder described above is a wafer holder that assumes that the wafer is processed at a temperature higher than room temperature, for example, a high temperature of 400 ° C or higher, in recent years, It was difficult to apply to the treatment at a temperature below room temperature.
- the present invention can be applied to wafer processing at a temperature below room temperature, and provides a wafer holder particularly suitable for use in a CVD apparatus. It is the purpose.
- the present invention provides a wafer holder having a wafer placement surface for placing a wafer, the wafer holder becomes a ceramic force, and a coolant is caused to flow therein.
- the present invention provides a wafer holder for a semiconductor manufacturing apparatus, characterized by having a flow path for the purpose.
- the present invention is a method for manufacturing a wafer holding body having a flow path for flowing a refrigerant inside the ceramic force, the flow path being formed on a single ceramic substrate, and at least Provided is a method for manufacturing a wafer holder for a semiconductor manufacturing apparatus, characterized in that at least one ceramic substrate is further bonded on and / or below the ceramic substrate so as to cover the flow path.
- the present invention provides a semiconductor manufacturing apparatus, particularly a CVD apparatus, characterized in that the above-described wafer holder is mounted.
- the flow path for allowing the coolant to flow directly into the ceramic wafer holder is provided, it can be used for processing such as film formation at room temperature or lower.
- the wafer holder is made of ceramics, it eliminates contamination by metal components and has high corrosion resistance against corrosive gases used during film formation and cleaning.
- a high wafer holder and semiconductor manufacturing apparatus can be provided.
- FIG. 1 is a schematic cross-sectional view showing a specific example of a wafer holder of the present invention.
- a flow path through which a coolant for cooling the wafer holder flows is formed inside the ceramic wafer holder. Therefore, the refrigerant flowing in the flow path can take away the heat of the wafer holder, and the wafer holder can always be efficiently maintained at a low temperature. Therefore, it can be suitably used for film formation and other processes that are particularly demanded in recent years at room temperature or lower. For example, even if the wafer temperature rises during film formation, the temperature is kept below room temperature. Therefore, film formation with a uniform film thickness can be realized.
- the coolant flowing through the flow path in the wafer holder there are no particular restrictions on the coolant flowing through the flow path in the wafer holder, and examples include water and organic solvents.
- water due to the recent trend of low film formation temperature, water cannot be used at 0 ° C. or lower, so it is preferable to use an organic solvent such as Galden-ya alcohol.
- Galden-ya alcohol By using these solvents, it can be used by lowering the freezing point. For example, it can be used at temperatures below 0 ° C by mixing water and alcohol.
- a low-temperature gas such as nitrogen, helium or air.
- the flow path formed in the wafer holder is preferably formed in an area of 80% or more of the diameter of the wafer to be mounted.
- the diameter of the wafer is 200 mm
- the flow path is formed from the center of the wafer holder to at least the same area as the diameter of the wafer.
- the surface roughness of the inner wall of the flow path is preferably 5 m or less in terms of Ra.
- the surface roughness of the inner wall of the flow path is greater than 5 m, it is not preferable, especially when the refrigerant is a liquid, because the inner wall surface of the flow path is easily eroded by the refrigerant and the wall surface is liable to deteriorate.
- various shapes such as a circle, a rectangle, an ellipse, a semicircle, and a triangle, which are not particularly limited, can be used.
- the material used for the wafer holder may be aluminum nitride, silicon carbide, silicon nitride, alumina, mullite, cordierite, or the like, as long as it is ceramic. Of these, aluminum nitride is preferred among these. Since aluminum nitride has high corrosion resistance against the corrosive gas used in the semiconductor manufacturing apparatus, the generation of particles in the chamber can be suppressed as much as possible. In addition, since aluminum nitride has a relatively high thermal conductivity and a small specific heat, the wafer holder can be cooled P uniformly and efficiently.
- the surface roughness of the wafer holder itself is preferably 0.01 ⁇ m or more in terms of Ra.
- the surface roughness is 0.01 ⁇ m or more, minute projection force on the surface heat exchange is performed, so heat exchange with a large surface area is possible, and the force that can cool the wafer holder efficiently. is there.
- a temperature measuring element such as a thermocouple is arranged in a recess formed in the wafer holder, and the refrigerant is cooled based on the temperature measured by the temperature measuring element. Control the temperature of the flicker!
- a high-frequency generating electrode can be provided inside the wafer holder of the present invention.
- plasma can be generated near the wafer mounting surface, and a film can be formed on the wafer.
- the high frequency generating electrode is preferably embedded in the wafer holder.
- Examples of the form of the high-frequency generating electrode include a metal mesh, a metal foil, and a metal film. Among these, a film-like metal is particularly preferable. In the case of an electrode for high frequency generation that also has a film-like metal force, it is difficult for the high frequency to be used to leak to the lower part of the film, so that stable plasma generation can be obtained relatively easily.
- the material of the high-frequency generating electrode that can be embedded in the ceramic wafer holder must match the thermal expansion coefficient of the ceramic. Therefore, it is preferable to use metals with relatively low thermal expansion coefficients among metals, such as metals and alloys such as tungsten, molybdenum, and tantalum! /.
- the wafer holder of the present invention In order to install the wafer holder of the present invention in the chamber of the semiconductor manufacturing apparatus, it is preferable to provide a support on the surface opposite to the wafer mounting surface.
- the support has a cylindrical shape such as a cylindrical shape
- the temperature of the cooling pipe for supplying the refrigerant, the electrode components connected to the high frequency generating electrode, and the wafer holder are measured in the cylindrical support. It can be used to store a temperature measuring element.
- the cylindrical support can be hermetically sealed with respect to the wafer holder, and can also be hermetically sealed with respect to the chamber.
- the cylindrical support material is the same as that of the wafer holder, so that the generation of stress due to the difference in thermal expansion coefficient can be suppressed, and highly reliable bonding is achieved. It can be a structure.
- the metal parts stored in the cylindrical support body are not exposed in the chamber, and the occurrence of metal contamination can be suppressed.
- the cylindrical support body when the cylindrical support body is open to the atmosphere, when the wafer holder is cooled, condensation occurs around the cooling pipe that supplies the refrigerant. It becomes easy and corrosion of metal parts and ceramics may progress. In that case, dew condensation can be prevented by supplying a dry gas into the cylindrical support. It is also possible to prevent dew condensation by blocking the inside of the cylindrical support body from the outside air and supplying dry gas to the inside. In any case, the dew point of the atmosphere in the cylindrical support body must be at least 0 ° C or less.
- the atmosphere in the cylindrical support body can be made substantially the same as the atmosphere in the chamber.
- the cylindrical support can be fixed to the wafer holder with a plurality of screws, for example.
- the merit of this method is that the parts in the cylindrical support body do not condense, and the structure can be made relatively simple.
- corrosion of metal parts can be reduced by sending an inert gas into the cylindrical support body and making the atmosphere in the cylindrical support body relatively higher than the pressure in the chamber. Can do. Even in this case, the atmosphere in the cylindrical support body needs to have a dew point of 0 ° C or less.
- a wafer holder having a coolant flow path therein is manufactured by bonding a plurality of ceramic substrates. At this time, a flow path is formed on one ceramic substrate, and at least the flow of the ceramic substrate is reduced. It can be manufactured by mounting and bonding another ceramic substrate on the surface on which the path is formed so as to cover the flow path.
- This method is preferable because the flow path is formed in the sintered ceramic substrate, so that the flow path can be formed with relatively high accuracy and the flow path is hardly deformed.
- the flow path is partially narrowed or widened.
- the flow velocity partially increases or decreases, so that the wall surface of the flow path is easily corroded by the refrigerant.
- a known bonding paste can be used for bonding the ceramic substrates.
- the wafer holder is aluminum nitride
- This paste is particularly preferred because it has excellent corrosion resistance because the main component of the bonding layer, which is formed by the force of good wettability with the aluminum nitride substrate, is aluminum nitride when bonded by heat treatment.
- the content of aluminum nitride is preferably 1% by weight or more. If the aluminum nitride content is less than 1% by weight, the corrosion resistance may be inferior because there is little aluminum nitride in the bonding layer components. In addition, when the content of aluminum nitride exceeds S40% by weight, the adhesive strength is lowered, so that it is preferably 40% by weight or less.
- the aluminum nitride content is particularly preferably 5 to 30% by weight, and more preferably in the range of 15 to 25% by weight because a particularly stable bonding layer can be obtained.
- the content of Sani ⁇ aluminum in the bonding paste is preferably a Dearuko 20-80 0/0.
- the content of aluminum oxide is less than 20% by weight or more than 80% by weight, the appearance temperature of the liquid phase for bonding becomes high, and the aluminum nitride substrate is likely to be deformed. This is preferable.
- the content is 40-60 heavy If the content is about this level, bonding can be performed at a temperature lower than the sintering temperature of the aluminum nitride, so that deformation of the aluminum nitride substrate can be suppressed.
- the content of the rare earth oxide in the bonding paste is preferably 10 to 50% by weight.
- a content in this range is preferable because it tends to react with acid aluminum and easily generate a liquid phase.
- rare earth oxides are excellent in wettability with aluminum nitride, if the content is 20 to 40% by weight, stable bonding can be realized, and the bonding strength between the bonding layer and the aluminum nitride substrate can be achieved. It is more preferable because the interface can be hermetically bonded.
- the rare earth oxide used in the bonding paste is not particularly limited, but is preferably the same type as the sintering aid used in the aluminum nitride substrate to be bonded.
- the type of rare earth oxide is not limited.
- rare earth oxides yttrium oxide is particularly preferred because of its excellent corrosion resistance and wettability with nitrided nitride.
- a predetermined amount of aluminum nitride powder, aluminum oxide powder, and rare earth oxide powder are mixed, and an organic solvent, a binder, and a plasticizer as necessary. Is added and kneaded to prepare a paste. This paste is applied to the surface of the aluminum nitride substrate to be bonded, degreased as necessary, and another aluminum nitride substrate is placed on the coated surface and heat treated to form a strong bonding layer. can do.
- the temperature and pressure at the time of bonding are not particularly limited, but may be any temperature and pressure that do not deform the aluminum nitride substrate.
- the heat treatment temperature is preferably about 1600 to 2000 ° C., although it depends on the composition of the paste.
- the pressure to be applied, lkgZcm 2 or more preferably tool LOkgZcm 2 than on are more preferable.
- the metal film electrode When the high frequency generating electrode is formed in the wafer holder, it is particularly preferable to form the metal film electrode by screen printing. According to screen printing, the film thickness obtained is relatively uniform, and the cost is low and the mass productivity is excellent. Electricity used for screen printing As the electrode forming paste, a paste obtained by adding a binder, an organic solvent, and, if necessary, a plasticizer to a refractory metal powder such as tungsten, molybdenum, or tantalum may be used.
- the electrode forming paste is applied onto a ceramic substrate by screen printing, dried, and then fired in a non-acidic atmosphere at a temperature of 1600 to 2000 ° C. An electrode for high frequency generation of a metal film is obtained. Thereafter, if the ceramic substrate is bonded using the bonding method described above, a wafer holder having a high-frequency generating electrode therein can be manufactured relatively easily. As a matter of course, bonding for forming a flow path for flowing a coolant and bonding for embedding a high-frequency generating electrode can be performed at the same time. The body can be manufactured.
- the wafer holder according to the present invention can be suitably used in a semiconductor manufacturing process where it is necessary to cool the wafer.
- it can be mounted on a semiconductor manufacturing apparatus to perform processes such as etching, ashing, and CVD.
- a CVD apparatus an efficient film formation can be realized by mounting a wafer holder in which a high frequency generating electrode is embedded.
- yttrium oxide powder as a sintering aid was added to 99.5% by weight of aluminum nitride powder, an organic solvent and a binder were further added, and a ball mill was mixed to prepare a slurry.
- the obtained slurry was made into granules by spray drying, and a compact was produced by press molding.
- the compact was degreased at 800 ° C. in a nitrogen atmosphere and then sintered at 1900 ° C. in a nitrogen atmosphere to obtain an aluminum nitride sintered body.
- Three aluminum nitride sintered bodies were formed by the above-described method, and each was used as an aluminum nitride substrate. That is, one of them was processed to a diameter of 330 mm and a thickness of 10 mm, and then a coolant flow path having a depth of 3 mm and a width of 6 mm was formed by machining. Since the diameter of the wafer to be mounted on the wafer holder is 300 mm, the flow path formation area was an area with a diameter of 310 mm from the center. The surface roughness of the inner wall of the channel was Ra / lO / zm. And the inlet of the channel The outlet was formed so as to be near the center of the substrate.
- Tungsten paste such as tungsten powder, binder, and organic solvent
- tungsten powder such as tungsten powder, binder, and organic solvent
- screen printing degreased at 800 ° C, fired at 1850 ° C, and high frequency A generating electrode was formed.
- the remaining one substrate was processed to have a diameter of 330 mm and a thickness of 3 mm.
- the obtained wafer holder was countersunk from the opposite side of the wafer mounting surface of the wafer holder 1 to the high-frequency generating electrode 2, and a tungsten electrode was attached to this. Installed.
- a stainless steel cooling pipe 4 was attached to the flow path 3 of the wafer holder 1. Further, a concave portion was formed on the surface of the wafer holder 1 opposite to the wafer mounting surface, and a sheath type thermocouple 5 was attached. Note that a nickel electrode pipe 6 having a through hole in the upper peripheral wall was joined to the tungsten electrode of the high frequency generating electrode 2 so that an inert gas could be supplied to the inside thereof.
- the flange portion of the cylindrical support 7 was joined to the surface of the wafer holder 1 opposite to the wafer mounting surface by screwing.
- This cylindrical support 7 is made of aluminum nitride, and has a flange portion with a diameter of 80 mm, an outer diameter of 60 mm, an inner diameter of 50 mm, and a height of 200 mm.
- the cooling pipe 4, the thermocouple 5, and the electrode pipe 6 were accommodated in the cylindrical support body 7.
- the wafer holder 1 was placed in the chamber of the CVD apparatus.
- the refrigerant Galden was supplied through the cooling pipe 4 housed in the cylindrical support 7 and flowed into the flow path 3 of the wafer holder 1.
- the electrode pipe 6 is supplied with 2 degassed helium gas at a dew point of 70 ° C as an inert gas.
- the temperature of the wafer holder 1 was controlled at 20 ° C.
- a wafer having a diameter of 300 mm was placed on the wafer placement surface, and a film forming gas was introduced into the chamber.
- a film was formed on the wafer by applying a high frequency of 13.56 MHz to the high-frequency generating electrode 2 to generate plasma, a uniform film could be formed on the wafer.
- the temperature distribution of the wafer was measured with a thermometer, and it was possible to control it to 20 ° C ⁇ 1 ° C.
- Example 1 flow path processing was performed on the aluminum nitride substrate. At that time, the flow path formation region was changed as shown in Table 1 below, and the temperature distribution was measured when the temperature of each wafer holder was controlled at 20 ° C. The results obtained are shown in Table 1 below. In Table 1 below, the results of Example 1 are also shown for reference. For wafer temperature measurement, a 300 mm diameter wafer thermometer with 29 measurement points was used.
- An aluminum nitride wafer holder was produced in the same manner as in Example 1 above. However, the flow path The corrosivity of aluminum nitride was confirmed by measuring the pH of the refrigerant after the test by flowing a water-alcohol mixed solvent adjusted to -10 ° C for 1000 hours while changing the surface roughness.
- Aluminum nitride is generally stable because an oxide film is formed on the surface in the air, but an oxide film such as a fracture surface or a polished surface is formed. Since the ammonia is generated when the untouched part comes into contact with water, it was judged that the corrosion of the flow path had progressed if the pH touched the alkaline side. The results obtained are shown in Table 2 below. The pH before the test was 7 in all cases.
- a wafer holder was prepared in the same manner as in Example 1, and helium gas was supplied into the electrode pipe. At that time, the dew point of helium gas was changed, and the temperature of the wafer holder was controlled at 10 ° C, and a 1000 hour durability test was conducted. After this endurance test, the corrosion state of the stainless steel cooling pipe and the nickel electrode pipe was visually confirmed, and the results are shown in Table 3 below.
- a wafer holder was produced in the same manner as in Example 1, but the material was changed to silicon nitride, alumina, mullite, cordierite, or silicon carbide.
- the temperature of these wafer holders was controlled in the same manner as in Example 1, and the temperature distribution was measured.
- the obtained results are shown in Table 4 below together with the results in Example 1.
- aluminum nitride was the best thermal uniformity of the wafer.
- Aluminum nitride (Example 1) 1.0
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/996,728 US20090283034A1 (en) | 2006-05-24 | 2007-05-21 | Wafer holder, manufacturing method thereof and semiconductor manufacturing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006143506 | 2006-05-24 | ||
JP2006-143506 | 2006-05-24 |
Publications (1)
Publication Number | Publication Date |
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WO2007136023A1 true WO2007136023A1 (ja) | 2007-11-29 |
Family
ID=38723335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/060327 WO2007136023A1 (ja) | 2006-05-24 | 2007-05-21 | ウエハ保持体とその製造方法及び半導体製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090283034A1 (ja) |
KR (1) | KR20080091072A (ja) |
TW (1) | TW200746350A (ja) |
WO (1) | WO2007136023A1 (ja) |
Families Citing this family (9)
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US8232156B2 (en) | 2010-11-04 | 2012-07-31 | International Business Machines Corporation | Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance |
WO2013179936A1 (ja) | 2012-05-30 | 2013-12-05 | 京セラ株式会社 | 流路部材ならびにこれを用いた吸着装置および冷却装置 |
NL2012204A (en) * | 2013-02-07 | 2014-12-18 | Asml Holding Nv | Lithographic apparatus and method. |
JP6704834B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
US10147610B1 (en) * | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
WO2019189197A1 (ja) * | 2018-03-28 | 2019-10-03 | 京セラ株式会社 | ヒータ及びヒータシステム |
JP2020049400A (ja) * | 2018-09-25 | 2020-04-02 | 東京エレクトロン株式会社 | ドライエアーの生成装置、ドライエアーの生成方法、および基板処理システム |
US20210035767A1 (en) * | 2019-07-29 | 2021-02-04 | Applied Materials, Inc. | Methods for repairing a recess of a chamber component |
US20230154781A1 (en) * | 2021-11-15 | 2023-05-18 | Ngk Insulators, Ltd. | Wafer placement table |
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JPH04152548A (ja) * | 1990-10-16 | 1992-05-26 | Mitsubishi Materials Corp | ウェーハの収納方法及び収納容器 |
JPH06267902A (ja) * | 1993-02-06 | 1994-09-22 | Hyundai Electron Ind Co Ltd | イーシーアール装置 |
JPH10289934A (ja) * | 1997-02-12 | 1998-10-27 | Tokyo Electron Ltd | プローブ装置及びプローブ方法 |
JP2002313899A (ja) * | 2001-04-11 | 2002-10-25 | Sumitomo Electric Ind Ltd | 基板保持構造体および基板処理装置 |
JP2002373873A (ja) * | 2001-06-15 | 2002-12-26 | Sumitomo Metal Ind Ltd | ウェハ保持用真空チャック |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
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2007
- 2007-05-21 KR KR1020087001781A patent/KR20080091072A/ko not_active Application Discontinuation
- 2007-05-21 WO PCT/JP2007/060327 patent/WO2007136023A1/ja active Application Filing
- 2007-05-21 US US11/996,728 patent/US20090283034A1/en not_active Abandoned
- 2007-05-24 TW TW096118581A patent/TW200746350A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04152548A (ja) * | 1990-10-16 | 1992-05-26 | Mitsubishi Materials Corp | ウェーハの収納方法及び収納容器 |
JPH06267902A (ja) * | 1993-02-06 | 1994-09-22 | Hyundai Electron Ind Co Ltd | イーシーアール装置 |
JPH10289934A (ja) * | 1997-02-12 | 1998-10-27 | Tokyo Electron Ltd | プローブ装置及びプローブ方法 |
JP2002313899A (ja) * | 2001-04-11 | 2002-10-25 | Sumitomo Electric Ind Ltd | 基板保持構造体および基板処理装置 |
JP2002373873A (ja) * | 2001-06-15 | 2002-12-26 | Sumitomo Metal Ind Ltd | ウェハ保持用真空チャック |
Also Published As
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US20090283034A1 (en) | 2009-11-19 |
KR20080091072A (ko) | 2008-10-09 |
TW200746350A (en) | 2007-12-16 |
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