JP5980147B2 - 基板支持装置 - Google Patents
基板支持装置 Download PDFInfo
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- JP5980147B2 JP5980147B2 JP2013047164A JP2013047164A JP5980147B2 JP 5980147 B2 JP5980147 B2 JP 5980147B2 JP 2013047164 A JP2013047164 A JP 2013047164A JP 2013047164 A JP2013047164 A JP 2013047164A JP 5980147 B2 JP5980147 B2 JP 5980147B2
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- flow path
- refrigerant
- cooling plate
- plate
- substrate support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
Description
以下、図4及び図5を参照し、本発明の一実施形態に係る基板支持装置の概略構成について説明する。図4は、本発明の一実施形態に係る基板支持装置の概略構成を模式的に示す断面図である。図5は、図4に示すA−A´線の断面図であり、プレート部300の概略構成を示す。
以下、図1乃至図3を参照し、本発明の一実施形態に係る基板支持装置のプレート部300の構成についてより詳細に述べる。図1は、本発明の一実施形態に係る基板支持装置の第1冷却板100を示す平面図である。図2は、本発明の一実施形態に係る基板支持装置の第2冷却板200を示す平面図である。図3は、本発明の一実施形態に係る基板支持装置のプレート部300を示す分解斜視図である。
図1及び図3を参照し、プレート部300のうち、第1冷却板100の構成について述べる。図1及び図3に図示したように、第1冷却板100は、略円柱形状を備える第1基材101の表面に、第1流路110が溝状に形成された構成を備える。第1基材101の第1流路110の形成された面が第3基材302に接合され、第3基材302と接合された面と対向する面が、ヒータープレート301に接合される。
図2及び図3を参照し、プレート部300のうち、第2冷却板200の構成について述べる。図2及び図3に図示したように、第2冷却板200は、略円柱形状を備える第2基材201の表面に、第2流路210が溝状に形成された構成を備える。第2基材201の第2流路210の形成された面がヒータープレート301に接合され、ヒータープレート301と接合された面と対向する面上に、ウェハが載置される。
101 第1基材
110 第1流路
200 第2冷却板
201 第2基材
210 第2流路
300 プレート部
301 ヒータープレート
310 発熱体
400 シャフト部
20A、20B、21A、21B 連結管
Claims (6)
- 内部に発熱体を有するヒータープレートと、前記ヒータープレートの下面に配置されて第1流路を有する第1冷却板と、前記ヒータープレートの上面に配置されて第2流路を有する第2冷却板と、を備えたプレート部と、
前記発熱体に接続されて前記発熱体に電流を供給する配線と、前記第1冷却板及び前記第2冷却板に冷媒を供給する配管とを内部に有し、前記プレート部を支持するシャフト部と、を備え、
前記第1流路は、前記第1冷却板の中央部から外縁部に向かって第1方向に周回する渦巻き状の流路を含み、
前記第2流路は、前記第2冷却板の中央部から外縁部に向かって前記第1方向とは反対方向の第2方向に周回する渦巻き状の流路を含むことを特徴とする基板支持装置。 - 前記第1流路と前記第2流路とを連結して前記第1流路から前記第2流路に前記冷媒を供給する第1連結管をさらに備え、
前記第1流路は、前記第1連結管に連結された箇所において、第1角度で水平方向に曲げられた部分を含むことを特徴とする請求項1に記載の基板支持装置。 - 前記第1流路と前記第2流路とを連結して前記第2流路から前記第1流路に前記冷媒を供給する第2連結管をさらに備え、
前記第1流路は、前記第2連結管に連結された箇所において、第2角度で水平方向に曲げられた部分を含むことを特徴とする請求項1又は2に記載の基板支持装置。 - 前記第1角度及び前記第2角度は、90度であることを特徴とする請求項2又は3に記載の基板支持装置。
- 前記第1流路は、前記第1方向に周回する渦巻き状の流路に前記外縁部において連結されて前記外縁部から前記中央部に向かって前記第2方向に周回する渦巻き状の流路をさらに含み、
前記第2流路は、前記第2方向に周回する渦巻き状の流路に前記外縁部において連結されて前記外縁部から前記中央部に向かって前記第1方向に周回する渦巻き状の流路をさらに含み、
前記第1流路の前記第1方向に周回する渦巻き状の流路と、前記第2流路の前記第1方向に周回する渦巻き状の流路とは少なくとも一部が重畳して配置され、
前記第1流路の前記第2方向に周回する渦巻き状の流路と、前記第2流路の前記第2方向に周回する渦巻き状の流路とは少なくとも一部が重畳して配置されることを特徴とする請求項1乃至4のいずれか一項に記載の基板支持装置。 - 前記第2流路の流路の断面積は、前記第1流路の流路の断面積よりも大きいことを特徴とする請求項1乃至5のいずれか一項に記載の基板支持装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013047164A JP5980147B2 (ja) | 2013-03-08 | 2013-03-08 | 基板支持装置 |
PCT/JP2014/053142 WO2014136538A1 (ja) | 2013-03-08 | 2014-02-12 | 基板支持装置 |
KR1020157024229A KR101719444B1 (ko) | 2013-03-08 | 2014-02-12 | 기판 지지 장치 |
TW103107950A TWI624904B (zh) | 2013-03-08 | 2014-03-07 | 基板支持裝置 |
US14/845,865 US9551071B2 (en) | 2013-03-08 | 2015-09-04 | Substrate support device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013047164A JP5980147B2 (ja) | 2013-03-08 | 2013-03-08 | 基板支持装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014175491A JP2014175491A (ja) | 2014-09-22 |
JP5980147B2 true JP5980147B2 (ja) | 2016-08-31 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013047164A Active JP5980147B2 (ja) | 2013-03-08 | 2013-03-08 | 基板支持装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9551071B2 (ja) |
JP (1) | JP5980147B2 (ja) |
KR (1) | KR101719444B1 (ja) |
TW (1) | TWI624904B (ja) |
WO (1) | WO2014136538A1 (ja) |
Families Citing this family (18)
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JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN106925867B (zh) * | 2015-12-30 | 2019-09-17 | 上海微电子装备(集团)股份有限公司 | 一种键合机加热冷却装置及其制作方法 |
KR102513443B1 (ko) | 2016-03-15 | 2023-03-24 | 삼성전자주식회사 | 정전 척 및 그를 포함하는 기판 처리 장치 |
JP6704836B2 (ja) | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
JP6704834B2 (ja) | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
JP6982394B2 (ja) * | 2017-02-02 | 2021-12-17 | 東京エレクトロン株式会社 | 被加工物の処理装置、及び載置台 |
JP6832804B2 (ja) | 2017-07-20 | 2021-02-24 | 東京エレクトロン株式会社 | 基板載置台及び基板検査装置 |
JP7066479B2 (ja) * | 2018-03-29 | 2022-05-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11230766B2 (en) * | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
JP2019201086A (ja) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | 処理装置、部材及び温度制御方法 |
JP7090478B2 (ja) * | 2018-06-05 | 2022-06-24 | 東京エレクトロン株式会社 | 基板載置台及び基板検査装置 |
CN112136202B (zh) * | 2018-06-08 | 2024-04-12 | 应用材料公司 | 用于在等离子体增强化学气相沉积腔室中抑制寄生等离子体的设备 |
JP6918042B2 (ja) | 2019-03-26 | 2021-08-11 | 日本碍子株式会社 | ウエハ載置装置 |
WO2020220189A1 (zh) * | 2019-04-29 | 2020-11-05 | 苏州晶湛半导体有限公司 | 一种晶片承载盘 |
JP6845286B2 (ja) | 2019-08-05 | 2021-03-17 | 日本発條株式会社 | ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法 |
JP2022143369A (ja) * | 2021-03-17 | 2022-10-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN115101444B (zh) * | 2022-06-22 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 承载装置及半导体工艺设备 |
CN115938995B (zh) * | 2023-02-24 | 2023-05-30 | 深圳市新凯来技术有限公司 | 晶圆加热装置以及半导体加工设备 |
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JP4644943B2 (ja) | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
JP2003324095A (ja) * | 2002-05-02 | 2003-11-14 | Komatsu Ltd | 半導体製造装置用基板の冷却回路とその冷却回路を備えた半導体製造装置 |
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-
2013
- 2013-03-08 JP JP2013047164A patent/JP5980147B2/ja active Active
-
2014
- 2014-02-12 KR KR1020157024229A patent/KR101719444B1/ko active IP Right Grant
- 2014-02-12 WO PCT/JP2014/053142 patent/WO2014136538A1/ja active Application Filing
- 2014-03-07 TW TW103107950A patent/TWI624904B/zh active
-
2015
- 2015-09-04 US US14/845,865 patent/US9551071B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150115014A (ko) | 2015-10-13 |
WO2014136538A1 (ja) | 2014-09-12 |
TWI624904B (zh) | 2018-05-21 |
JP2014175491A (ja) | 2014-09-22 |
US9551071B2 (en) | 2017-01-24 |
KR101719444B1 (ko) | 2017-03-23 |
US20150376783A1 (en) | 2015-12-31 |
TW201436095A (zh) | 2014-09-16 |
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