JP2013520027A - 高スループットのための基板ロードおよびアンロードメカニズム - Google Patents
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- 230000007246 mechanism Effects 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 title claims description 270
- 239000000969 carrier Substances 0.000 claims abstract description 42
- 238000012546 transfer Methods 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims description 45
- 239000013043 chemical agent Substances 0.000 claims description 20
- 102000012498 secondary active transmembrane transporter activity proteins Human genes 0.000 abstract 1
- 108040003878 secondary active transmembrane transporter activity proteins Proteins 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical compound ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】本明細書に記載の様々な例示的な実施形態において、システムは、同軸取り付けされた中点を両端部の間にそれぞれ有する複数のキャリアアームを備えており、キャリアアームの両端部の各々には、ウエハキャリアが取り付けられている。ハブは、複数の同軸取り付けされた駆動部を備えており、複数の駆動部の各々は、複数のキャリアアームの内の対応するキャリアアームの中点の近傍に結合されている。複数の駆動部の各々は、複数の同軸取り付けされた駆動部の内の残りの駆動部から独立して制御されるよう構成されている。それぞれのモータが、同軸取り付けされた駆動部の各々に結合されており、結合されたキャリアアームを回転させるよう構成されている。線形ウエハ搬送メカニズムが、複数のキャリアアーム上のウエハキャリアの内の選択されたキャリアにまたはキャリアからウエハを、ロード/アンロードロボットにとって容易なハンドオフ位置に移動させる。
【選択図】図2
Description
本願は、2010年2月16日出願の米国特許出願第12/706,397号(代理人整理番号第2904.040US1)の優先権の利益を主張する。後者は、2008年6月25日出願の米国特許出願第12/145,707号(代理人整理番号第2904.004US1)の一部継続出願であり、それに対して優先権の利益を主張する。また、後者は、2008年5月27日出願の米国仮特許出願第61/040,023号(代理人整理番号第2904.004PRV)に対して優先権の利益を主張する。これらの出願の各々の優先権の利益はこれにより主張され、各出願は参照によって本明細書にその全体が組み込まれる。
Claims (14)
- 高い基板スループットを提供するための基板キャリアシステムであって、
両端部の間の中点を各々有し、互いに平行な平面内で前記中点を中心に回転するよう構成され、前記両端部の各々の上に取り付けられた少なくとも1つの回転取り付け基板キャリアを有する複数のキャリアアームと、
複数の同軸取り付けされた駆動部を含むハブであって、前記複数の駆動部の各々は、前記複数のキャリアアームの内の対応する1つの前記中点付近に結合され、前記複数のキャリアアームの少なくとも一部は、残りの前記複数のキャリアアームと独立して駆動されるよう構成される、ハブと、
前記同軸取り付けされた駆動部の各々にそれぞれ結合され、前記複数のキャリアアームの内の結合された1つを回転させるよう構成された駆動モータと、
前記複数のキャリアアームに近接して結合され、その上に取り付けられた複数の線形基板キャリアを有する線形横移動メカニズムであって、前記複数の線形基板キャリアの各々は、前記複数のキャリアアームの前記平面と実質的に平行な平面内で基板を搬送するよう構成され、互いに異なる平面内に存在する、線形横移動メカニズムと、
を備える、システム。 - 請求項1に記載の基板キャリアシステムであって、さらに、前記複数のキャリアアームが通る回転経路の外周に近接して配置された少なくとも1つの基板搬送スロットを備える、システム。
- 請求項2に記載の基板キャリアシステムであって、さらに、前記複数のキャリアアームが通る前記回転経路の下方、かつ、前記複数のキャリアアームの前記中点と前記少なくとも1つの基板搬送スロットとの間の半径方向の線の上に配置された基板リフタを備える、システム。
- 請求項1に記載の基板キャリアシステムであって、さらに、前記ハブと同軸に各々取りつけられ、前記回転取り付け基板キャリアの各々の内周および外周をそれぞれ支持するよう構成された内側軌道部および外側軌道部を備える、システム。
- 請求項1に記載の基板キャリアシステムであって、前記複数の線形基板キャリアの各々の搬送面は、互いから約10mmに配置される、システム。
- 請求項1に記載の基板キャリアシステムであって、前記複数の線形基板キャリアの各々は、別個のモータによって独立して駆動される、システム。
- 請求項1に記載の基板キャリアシステムであって、さらに、前記複数のキャリアアームに結合された基板処理チャンバを備える、システム。
- 請求項1に記載の基板キャリアシステムであって、前記線形横移動メカニズムは、前記複数のキャリアアームの上方に動作可能に結合される、システム。
- 請求項1に記載の基板キャリアシステムであって、前記複数の線形基板キャリアの各々は、基板リフタの上方で同軸に前記基板の1つを配置するためにc字形構造を有する、システム。
- 請求項1に記載の基板キャリアシステムであって、前記線形横移動メカニズムは、さらに、
少なくとも2つの上側軌道と、
少なくとも2つの下側軌道と、
前記少なくとも2つの上側軌道および前記2つの下側軌道の各々にそれぞれ結合された線形駆動メカニズムであって、前記複数の線形基板キャリアの各々は、前記線形駆動メカニズムの固有の1つと機械的に結合される、線形駆動メカニズムと、
を備える、システム。 - 請求項1に記載の基板キャリアシステムであって、さらに、少なくとも1つの化学剤放出ヘッドを備え、前記少なくとも1つの化学剤放出ヘッドは、前記回転取り付け基板キャリアの各々の回転経路に近接して配置される、システム。
- 請求項11に記載の基板キャリアシステムであって、前記少なくとも1つの化学剤放出ヘッドは、前記回転取り付け基板キャリアの経路の上方に配置される、システム。
- 請求項11に記載の基板キャリアシステムであって、前記少なくとも1つの化学剤放出ヘッドは、前記回転取り付け基板キャリアの経路の下方に配置される、システム。
- 請求項11に記載の基板キャリアシステムであって、前記少なくとも1つの化学剤放出ヘッドは、前記ヘッドの内周よりも前記ヘッドの外周において広い断面幅を有する、システム。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/706,397 US8562272B2 (en) | 2010-02-16 | 2010-02-16 | Substrate load and unload mechanisms for high throughput |
US12/706,397 | 2010-02-16 | ||
PCT/US2011/022870 WO2011102952A2 (en) | 2010-02-16 | 2011-01-28 | Substrate load and unload mechanisms for high throughput |
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JP2013520027A true JP2013520027A (ja) | 2013-05-30 |
JP2013520027A5 JP2013520027A5 (ja) | 2014-03-20 |
JP5779598B2 JP5779598B2 (ja) | 2015-09-16 |
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US (1) | US8562272B2 (ja) |
JP (1) | JP5779598B2 (ja) |
KR (1) | KR20130025369A (ja) |
CN (1) | CN102770954B (ja) |
SG (1) | SG183364A1 (ja) |
TW (1) | TWI563591B (ja) |
WO (1) | WO2011102952A2 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
WO2011102952A3 (en) | 2012-01-05 |
CN102770954A (zh) | 2012-11-07 |
KR20130025369A (ko) | 2013-03-11 |
TW201145443A (en) | 2011-12-16 |
CN102770954B (zh) | 2015-06-17 |
JP5779598B2 (ja) | 2015-09-16 |
US8562272B2 (en) | 2013-10-22 |
TWI563591B (en) | 2016-12-21 |
US20110200415A1 (en) | 2011-08-18 |
WO2011102952A2 (en) | 2011-08-25 |
SG183364A1 (en) | 2012-09-27 |
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