JP2012080111A5 - - Google Patents

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JP2012080111A5
JP2012080111A5 JP2011254055A JP2011254055A JP2012080111A5 JP 2012080111 A5 JP2012080111 A5 JP 2012080111A5 JP 2011254055 A JP2011254055 A JP 2011254055A JP 2011254055 A JP2011254055 A JP 2011254055A JP 2012080111 A5 JP2012080111 A5 JP 2012080111A5
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layer
nitride
electron mobility
high electron
mobility transistor
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JP2012080111A (ja
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Claims (19)

  1. 基板上にある、窒化物ベースのチャネル層と、
    前記窒化物ベースのチャネル層上にある、窒化物ベースの半導体バリア層と、
    前記バリア層上にある、保護層と、
    前記バリア層上にあり、オーム性接触と前記保護層の間の隙間を設けるように、前記保護層に隣接すると共にそれから離隔される複数のオーム性接触と、
    前記バリア層上にあり、前記保護層を貫通して延びるゲート接点とを備えることを特徴とする高電子移動度トランジスタ。
  2. 前記保護層上にあり、前記オーム性接触と前記保護層の間の前記隙間を実質的に埋める、パッシベーション層をさらに備えることを特徴とする請求項１に記載の高電子移動度トランジスタ。
  3. 前記窒化物ベースのチャネル層は、ＩＩＩ族窒化物層を含み、
    前記窒化物ベースの半導体バリア層は、ＩＩＩ族窒化物層を含むことを特徴とする請求項１に記載の高電子移動度トランジスタ。
  4. 前記チャネル層は、前記バリア層よりも低いバンドギャップを有することを特徴とする請求項１に記載の高電子移動度トランジスタ。
  5. 前記チャネル層は、約２０Åを超える厚さを有する非ドープ層を含むことを特徴とする請求項１に記載の高電子移動度トランジスタ。
  6. 前記チャネル層は、超格子および／またはＩＩＩ族窒化物層の組合せを有することを特徴とする請求項１に記載の高電子移動度トランジスタ。
  7. 前記チャネル層は、窒化アルミニウムガリウム（ＡｌＧａＮ）、窒化ガリウム（ＧａＮ）、窒化インジウムガリウム（ＩｎＧａＮ）、および／または窒化アルミニウムインジウムガリウム（ＡｌＩｎＧａＮ）を含み、
    前記バリア層は、窒化アルミニウム（ＡｌＮ）、窒化アルミニウムインジウム（ＡｌＩｎＮ）、ＡｌＧａＮ、ＧａＮ、ＩｎＧａＮ、および／またはＡｌＩｎＧａＮを含むことを特徴とする請求項１に記載の高電子移動度トランジスタ。
  8. 前記バリア層は、ＡｌｘＧａ１−ｘＮ（ただし０＜ｘ＜１）を含むことを特徴とする請求項１に記載の高電子移動度トランジスタ。
  9. 前記バリア層は、複数の層を含むことを特徴とする請求項１に記載の高電子移動度トランジスタ。
  10. 前記基板上にバッファ層をさらに備え、前記窒化物ベースのチャネル層は、前記バッファ層上に配設されることを特徴とする請求項１に記載の高電子移動度トランジスタ。
  11. 前記保護層は、少なくとも前記オーム性接触と同程度の厚さであることを特徴とする請求項１に記載の高電子移動度トランジスタ。
  12. 前記ゲート接点は、直接前記保護層上にあることを特徴とする請求項１１に記載の高電子移動度トランジスタ。
  13. 前記保護層は、単層約２枚分の厚さを有することを特徴とする請求項１に記載の高電子移動度トランジスタ。
  14. 窒化物ベースの半導体チャネル層上に、窒化物ベースの半導体バリア層を形成すること、
    前記窒化物ベースの半導体バリア層のゲート領域上に、保護層を形成すること、
    前記バリア層上に、パターニングされた複数のオーム性接触金属領域を形成すること、
    第１および第２のオーム性接触を形成するために、前記パターニングされたオーム性接触金属をアニールすること、
    前記バリア層のゲート領域の一部分を露出させるために、低損傷エッチング技術を利用して、前記バリア層の前記ゲート領域内の前記保護層に陥凹部をエッチングすること、および
    前記パッシベーション層の前記陥凹部中に、前記ゲート接点を形成することを含むことを特徴とするトランジスタの製作方法。
  15. 前記保護層は、パッシベーション層を含むことを特徴とする請求項１４に記載の方法。
  16. 前記保護層は、窒化アルミニウム層、窒化ケイ素層、および／または二酸化ケイ素層を含むことを特徴とする請求項１４に記載の方法。
  17. 前記低損傷エッチング技術は、強塩基を使用する湿式エッチングを含むことを特徴とする請求項１４に記載の方法。
  18. 第１および第２のオーム性接触を形成するために、前記パターニングされたオーム性接触金属をアニールすることは、保護層を形成する前に実施されることを特徴とする請求項１４に記載の方法。
  19. 第１および第２のオーム性接触を形成するために、前記パターニングされたオーム性接触金属をアニールすることは、保護層を形成した後に実施されることを特徴とする請求項１４に記載の方法。
JP2011254055A 2004-01-16 2011-11-21 保護層および低損傷陥凹部を備える窒化物ベースのトランジスタならびにその製作方法 Active JP6050579B2 (ja)

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US10/758,871 2004-01-16
US10/758,871 US7045404B2 (en) 2004-01-16 2004-01-16 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof

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EP (2) EP2492963B1 (ja)
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CN (1) CN100468770C (ja)
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Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate
JP2005317684A (ja) * 2004-04-27 2005-11-10 Eudyna Devices Inc ドライエッチング方法および半導体装置
US7332795B2 (en) * 2004-05-22 2008-02-19 Cree, Inc. Dielectric passivation for semiconductor devices
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
JP4866007B2 (ja) * 2005-01-14 2012-02-01 富士通株式会社 化合物半導体装置
WO2006080109A1 (ja) * 2005-01-25 2006-08-03 Fujitsu Limited Ｍｉｓ構造を有する半導体装置及びその製造方法
JP4912604B2 (ja) * 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US20070018199A1 (en) 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
JP4799965B2 (ja) * 2005-09-06 2011-10-26 日本電信電話株式会社 窒化物半導体を用いたヘテロ構造電界効果トランジスタ
WO2008027027A2 (en) 2005-09-07 2008-03-06 Cree, Inc Transistor with fluorine treatment
US7399692B2 (en) * 2005-10-03 2008-07-15 International Rectifier Corporation III-nitride semiconductor fabrication
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
JP2007234986A (ja) * 2006-03-02 2007-09-13 National Institute Of Information & Communication Technology ＡｌＮ障壁層を有するＧａＮ系電界効果トランジスタ、及びそのような電界効果トランジスタの製造方法
JP5362187B2 (ja) * 2006-03-30 2013-12-11 日本碍子株式会社 半導体素子
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
US7737455B2 (en) * 2006-05-19 2010-06-15 Bridgelux, Inc. Electrode structures for LEDs with increased active area
JP5207598B2 (ja) * 2006-05-24 2013-06-12 パナソニック株式会社 窒化物半導体材料、半導体素子およびその製造方法
CN100495724C (zh) * 2006-09-06 2009-06-03 中国科学院半导体研究所 氮化镓基异质结场效应晶体管结构及制作方法
JP5520432B2 (ja) 2006-10-03 2014-06-11 古河電気工業株式会社 半導体トランジスタの製造方法
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP5268929B2 (ja) * 2006-11-21 2013-08-21 アイメック ＡｌＧａＮ／ＧａＮＨＥＭＴの表面処理およびパッシベーション
JP5401758B2 (ja) * 2006-12-12 2014-01-29 サンケン電気株式会社 半導体装置及びその製造方法
JP5260550B2 (ja) * 2007-01-10 2013-08-14 インターナショナル レクティフィアー コーポレイション Ｉｉｉ族窒化物素子のための活性領域成形およびその製造方法
US20080265444A1 (en) * 2007-04-26 2008-10-30 Heetronix Thin-film aluminum nitride encapsulant for metallic structures on integrated circuits and method of forming same
US9647103B2 (en) * 2007-05-04 2017-05-09 Sensor Electronic Technology, Inc. Semiconductor device with modulated field element isolated from gate electrode
JP2008288289A (ja) * 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US8455920B2 (en) * 2007-05-23 2013-06-04 International Rectifier Corporation III-nitride heterojunction device
JP2008306026A (ja) * 2007-06-08 2008-12-18 Eudyna Devices Inc 半導体装置の製造方法
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
KR100922575B1 (ko) * 2007-12-05 2009-10-21 한국전자통신연구원 티형 게이트 전극을 구비한 반도체 소자 및 그의 제조 방법
US7935620B2 (en) 2007-12-05 2011-05-03 Freescale Semiconductor, Inc. Method for forming semiconductor devices with low leakage Schottky contacts
US8431962B2 (en) * 2007-12-07 2013-04-30 Northrop Grumman Systems Corporation Composite passivation process for nitride FET
US7632726B2 (en) * 2007-12-07 2009-12-15 Northrop Grumman Space & Mission Systems Corp. Method for fabricating a nitride FET including passivation layers
US7750370B2 (en) 2007-12-20 2010-07-06 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
US7842587B2 (en) * 2008-01-30 2010-11-30 Freescale Semiconductor, Inc. III-V MOSFET fabrication and device
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US9711633B2 (en) * 2008-05-09 2017-07-18 Cree, Inc. Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US7985986B2 (en) 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
US8384115B2 (en) 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
WO2010122628A1 (ja) * 2009-04-20 2010-10-28 富士通株式会社 化合物半導体装置及びその製造方法
US8742459B2 (en) * 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8105889B2 (en) 2009-07-27 2012-01-31 Cree, Inc. Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US20110068348A1 (en) 2009-09-18 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls
US8216924B2 (en) * 2009-10-16 2012-07-10 Cree, Inc. Methods of fabricating transistors using laser annealing of source/drain regions
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US20110241020A1 (en) * 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
US8907350B2 (en) * 2010-04-28 2014-12-09 Cree, Inc. Semiconductor devices having improved adhesion and methods of fabricating the same
US8847563B2 (en) 2010-07-15 2014-09-30 Cree, Inc. Power converter circuits including high electron mobility transistors for switching and rectifcation
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
JP5762049B2 (ja) * 2011-02-28 2015-08-12 ルネサスエレクトロニクス株式会社 半導体装置
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
KR101781438B1 (ko) * 2011-06-14 2017-09-25 삼성전자주식회사 반도체 발광소자의 제조방법
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US8860088B2 (en) * 2012-02-23 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of forming the same
US9093366B2 (en) 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
CN108807526B (zh) * 2012-04-20 2021-12-21 苏州晶湛半导体有限公司 增强型开关器件及其制造方法
US20130299895A1 (en) 2012-05-09 2013-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Iii-v compound semiconductor device having dopant layer and method of making the same
US8866195B2 (en) 2012-07-06 2014-10-21 Taiwan Semiconductor Manufacturing Co., Ltd. III-V compound semiconductor device having metal contacts and method of making the same
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US9076850B2 (en) 2012-07-30 2015-07-07 Samsung Electronics Co., Ltd. High electron mobility transistor
US9099490B2 (en) * 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
JP6178065B2 (ja) * 2012-10-09 2017-08-09 株式会社東芝 半導体装置
EP2920814A4 (en) 2012-11-16 2016-11-02 Massachusetts Inst Technology SEMICONDUCTOR STRUCTURE AND ETCHING TECHNIQUE FOR VENTING FORMATION
CN105164811B (zh) 2013-02-15 2018-08-31 创世舫电子有限公司 半导体器件的电极及其形成方法
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US20140335666A1 (en) 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP6338832B2 (ja) * 2013-07-31 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置
KR101455283B1 (ko) * 2013-08-09 2014-10-31 홍익대학교 산학협력단 패시베이션막 형성방법 및 이를 포함하는 AlGaN/GaN HFET의 제조방법
CN103760206B (zh) * 2014-01-14 2016-07-06 江苏新广联科技股份有限公司 基于氮化镓材料的人体血糖测试芯片
US20150255589A1 (en) * 2014-03-10 2015-09-10 Toshiba Corporation Indium-containing contact and barrier layer for iii-nitride high electron mobility transistor devices
EP2930754A1 (en) * 2014-04-11 2015-10-14 Nxp B.V. Semiconductor device
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
CN106373874A (zh) * 2015-07-21 2017-02-01 北大方正集团有限公司 基于AlGaN/GaN HEMT的欧姆接触电极的制造方法
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
CN105226093B (zh) * 2015-11-11 2018-06-26 成都海威华芯科技有限公司 GaN HEMT器件及其制作方法
CN108292678B (zh) 2015-11-19 2021-07-06 Hrl实验室有限责任公司 具有双栅极的iii族氮化物场效应晶体管
CN105448977A (zh) * 2015-12-31 2016-03-30 深圳市华讯方舟微电子科技有限公司 高电子迁移率晶体管及其制造方法
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
CN107230617A (zh) * 2016-03-25 2017-10-03 北京大学 氮化镓半导体器件的制备方法
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US10354879B2 (en) 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
CN109314135B (zh) * 2016-07-01 2023-03-10 英特尔公司 用于GaN E模式晶体管性能的栅极堆叠体设计
CN108010840B (zh) * 2016-11-02 2021-04-23 株洲中车时代半导体有限公司 掺杂半导体器件的制备方法和半导体器件
JP2018170458A (ja) * 2017-03-30 2018-11-01 株式会社東芝 高出力素子
CN107424919A (zh) * 2017-05-12 2017-12-01 中国电子科技集团公司第十三研究所 一种低损伤介质栅及其制备方法
US10615273B2 (en) 2017-06-21 2020-04-07 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10268789B1 (en) 2017-10-03 2019-04-23 Cree, Inc. Transistor amplifiers having node splitting for loop stability and related methods
WO2019073409A1 (en) * 2017-10-11 2019-04-18 King Abdullah University Of Science And Technology SEMICONDUCTOR DEVICES HAVING HETEROGONCTIONS OF A GALLIUM ALUMINUM NITRIDE TERNA ALLOY LAYER AND A SECOND NITRIDE III TERNAIRE ALLOY LAYER
CN109728086A (zh) * 2017-10-31 2019-05-07 中国工程物理研究院电子工程研究所 侧墙栅高迁移率晶体管的制备方法
JP7100241B2 (ja) * 2017-12-20 2022-07-13 富士通株式会社 化合物半導体装置及びその製造方法
CN108461543B (zh) * 2018-05-29 2022-07-08 苏州闻颂智能科技有限公司 一种GaN HEMT器件及其制备方法
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
WO2020106537A1 (en) 2018-11-19 2020-05-28 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10741496B2 (en) 2018-12-04 2020-08-11 Nxp Usa, Inc. Semiconductor devices with a protection layer and methods of fabrication
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
JP7074045B2 (ja) * 2018-12-21 2022-05-24 住友電気工業株式会社 窒化物半導体デバイスの製造方法及び窒化物半導体デバイス
US10937873B2 (en) 2019-01-03 2021-03-02 Cree, Inc. High electron mobility transistors having improved drain current drift and/or leakage current performance
JP7163806B2 (ja) * 2019-02-05 2022-11-01 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法及び増幅器
CN109841677A (zh) * 2019-03-28 2019-06-04 英诺赛科（珠海）科技有限公司 高电子迁移率晶体管及其制造方法
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers
US10923585B2 (en) 2019-06-13 2021-02-16 Cree, Inc. High electron mobility transistors having improved contact spacing and/or improved contact vias
US10971612B2 (en) 2019-06-13 2021-04-06 Cree, Inc. High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
CN112436056B (zh) * 2019-08-26 2024-03-26 联华电子股份有限公司 高电子迁移率晶体管
CN112490286B (zh) * 2019-09-12 2023-09-19 联华电子股份有限公司 半导体装置及其制作方法
US11075271B2 (en) 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
US11658233B2 (en) 2019-11-19 2023-05-23 Wolfspeed, Inc. Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
CN111223925A (zh) * 2019-11-27 2020-06-02 西安电子科技大学 基于AlN/GaN超晶格沟道的双向阻断功率器件及制作方法
US11837457B2 (en) 2020-09-11 2023-12-05 Wolfspeed, Inc. Packaging for RF transistor amplifiers
US11356070B2 (en) 2020-06-01 2022-06-07 Wolfspeed, Inc. RF amplifiers having shielded transmission line structures
US11670605B2 (en) 2020-04-03 2023-06-06 Wolfspeed, Inc. RF amplifier devices including interconnect structures and methods of manufacturing
US11837559B2 (en) 2020-04-03 2023-12-05 Wolfspeed, Inc. Group III nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals
US20210313293A1 (en) 2020-04-03 2021-10-07 Cree, Inc. Rf amplifier devices and methods of manufacturing
KR20220158261A (ko) 2020-04-03 2022-11-30 울프스피드, 인크. 소스, 게이트 및/또는 드레인 도전성 비아들을 갖는 iii족 질화물계 라디오 주파수 트랜지스터 증폭기들
US11769768B2 (en) 2020-06-01 2023-09-26 Wolfspeed, Inc. Methods for pillar connection on frontside and passive device integration on backside of die
US11228287B2 (en) 2020-06-17 2022-01-18 Cree, Inc. Multi-stage decoupling networks integrated with on-package impedance matching networks for RF power amplifiers
US11533025B2 (en) 2020-06-18 2022-12-20 Wolfspeed, Inc. Integrated doherty amplifier with added isolation between the carrier and the peaking transistors
US11533024B2 (en) 2020-06-25 2022-12-20 Wolfspeed, Inc. Multi-zone radio frequency transistor amplifiers
US11581859B2 (en) 2020-06-26 2023-02-14 Wolfspeed, Inc. Radio frequency (RF) transistor amplifier packages with improved isolation and lead configurations
CN113937071A (zh) * 2020-07-08 2022-01-14 英诺赛科（珠海）科技有限公司 电子装置
US11887945B2 (en) 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures
US11742302B2 (en) 2020-10-23 2023-08-29 Wolfspeed, Inc. Electronic device packages with internal moisture barriers
US20220157671A1 (en) 2020-11-13 2022-05-19 Cree, Inc. Packaged rf power device with pcb routing
US11791389B2 (en) 2021-01-08 2023-10-17 Wolfspeed, Inc. Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
CN114975614A (zh) * 2021-02-24 2022-08-30 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
US11869964B2 (en) * 2021-05-20 2024-01-09 Wolfspeed, Inc. Field effect transistors with modified access regions
US20220376085A1 (en) 2021-05-20 2022-11-24 Cree, Inc. Methods of manufacturing high electron mobility transistors having improved performance
TWI762346B (zh) * 2021-06-04 2022-04-21 瑞礱科技股份有限公司 一種iii族氮化物半導體元件之歐姆接觸製造方法
US11842937B2 (en) 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods
US20230075505A1 (en) 2021-09-03 2023-03-09 Wolfspeed, Inc. Metal pillar connection topologies for heterogeneous packaging
US20230078017A1 (en) 2021-09-16 2023-03-16 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
WO2023056145A1 (en) 2021-10-01 2023-04-06 Wolfspeed, Inc. Bypassed gate transistors having improved stability
US20230291367A1 (en) 2022-03-08 2023-09-14 Wolfspeed, Inc. Group iii nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors
US20240106397A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Transistor amplifier with pcb routing and surface mounted transistor die
US20240105824A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Barrier Structure for Sub-100 Nanometer Gate Length Devices
US20240105823A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Barrier Structure for Dispersion Reduction in Transistor Devices
US20240120202A1 (en) 2022-10-06 2024-04-11 Wolfspeed, Inc. Implanted Regions for Semiconductor Structures with Deep Buried Layers

Family Cites Families (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34861A (en) * 1862-04-01 Improved washing-machine
FR1487060A (ja) * 1965-07-30 1967-10-11
FR2465317A2 (fr) 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
CA1145482A (en) 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
US4536942A (en) * 1982-12-09 1985-08-27 Cornell Research Foundation, Inc. Fabrication of T-shaped metal lines for semiconductor devices
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPH088350B2 (ja) 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
JPS6229175A (ja) * 1985-07-29 1987-02-07 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタの製造方法
US4755867A (en) 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
JPS63155671A (ja) * 1986-12-18 1988-06-28 Nec Corp 半導体装置の製造方法
US4987462A (en) * 1987-01-06 1991-01-22 Texas Instruments Incorporated Power MISFET
US5258631A (en) * 1987-01-30 1993-11-02 Hitachi, Ltd. Semiconductor device having a two-dimensional electron gas as an active layer
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
JP2508818B2 (ja) * 1988-10-03 1996-06-19 三菱電機株式会社 半導体装置の製造方法
US5231038A (en) * 1989-04-04 1993-07-27 Mitsubishi Denki Kabushiki Kaisha Method of producing field effect transistor
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5196358A (en) * 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
JPH03292744A (ja) * 1990-01-24 1991-12-24 Toshiba Corp 化合物半導体装置およびその製造方法
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5292501A (en) 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
JPH04167439A (ja) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04223342A (ja) * 1990-12-26 1992-08-13 Mitsubishi Electric Corp 半導体装置のゲート電極とその製造方法
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
JPH0575139A (ja) * 1991-09-12 1993-03-26 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2735718B2 (ja) * 1991-10-29 1998-04-02 三菱電機株式会社 化合物半導体装置及びその製造方法
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
DE69202554T2 (de) 1991-12-25 1995-10-19 Nec Corp Tunneltransistor und dessen Herstellungsverfahren.
JP2978972B2 (ja) * 1992-03-12 1999-11-15 富士通株式会社 半導体装置の製造方法
JPH05275463A (ja) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
JPH05299441A (ja) * 1992-04-24 1993-11-12 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPH05326561A (ja) 1992-05-22 1993-12-10 Nec Corp 電界効果トランジスタの製造方法
JPH0653241A (ja) * 1992-08-03 1994-02-25 Nec Corp 電界効果トランジスタの製造方法
EP0592064B1 (en) * 1992-08-19 1998-09-23 Mitsubishi Denki Kabushiki Kaisha Method of producing a field effect transistor
US5399896A (en) * 1992-09-29 1995-03-21 Mitsubishi Denki Kabushiki Kaisha FET with a T-shaped gate of a particular structure
JPH06267991A (ja) 1993-03-12 1994-09-22 Hitachi Ltd 半導体装置およびその製造方法
JPH06275655A (ja) * 1993-03-24 1994-09-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE4326714A1 (de) * 1993-08-03 1995-02-09 Mantis Ulv Spruehgeraete Segmentrotationsdüse
JP2560993B2 (ja) * 1993-09-07 1996-12-04 日本電気株式会社 化合物半導体装置の製造方法
JPH0786310A (ja) * 1993-09-20 1995-03-31 Mitsubishi Electric Corp 高融点金属ゲート電極の形成方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JP3294411B2 (ja) * 1993-12-28 2002-06-24 富士通株式会社 半導体装置の製造方法
US5484740A (en) * 1994-06-06 1996-01-16 Motorola, Inc. Method of manufacturing a III-V semiconductor gate structure
US5514605A (en) * 1994-08-24 1996-05-07 Nec Corporation Fabrication process for compound semiconductor device
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5773334A (en) * 1994-09-26 1998-06-30 Toyota Jidosha Kabushiki Kaisha Method of manufacturing a semiconductor device
JP3380344B2 (ja) * 1994-11-30 2003-02-24 富士通株式会社 半導体装置及びその製造方法
JP3157690B2 (ja) 1995-01-19 2001-04-16 沖電気工業株式会社 ｐｎ接合素子の製造方法
JP2687917B2 (ja) * 1995-02-20 1997-12-08 日本電気株式会社 半導体装置の製造方法
US5534462A (en) 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
SE9501311D0 (sv) 1995-04-10 1995-04-10 Abb Research Ltd Method for producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
US5569943A (en) * 1995-09-01 1996-10-29 The United States Of America As Represented By The Secretary Of The Army Field effect real space transistor
US5733806A (en) * 1995-09-05 1998-03-31 Motorola, Inc. Method for forming a self-aligned semiconductor device
US6075262A (en) * 1995-09-21 2000-06-13 Fujitsu Limited Semiconductor device having T-shaped gate electrode
JPH09129865A (ja) * 1995-11-06 1997-05-16 Mitsubishi Electric Corp 半導体装置
JPH09139494A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
KR0175030B1 (ko) * 1995-12-07 1999-04-01 김광호 반도체 소자의 고내열 금속 배선 구조 및 그 형성 방법
KR100195269B1 (ko) 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5915164A (en) 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
JPH09186175A (ja) * 1995-12-28 1997-07-15 Sanyo Electric Co Ltd 化合物半導体装置の製造方法
KR0179116B1 (ko) * 1995-12-30 1999-03-20 구자홍 자가정렬형 티형 게이트 제조방법
DE19600116C2 (de) 1996-01-03 2001-03-15 Siemens Ag Doppelheterostruktur-HEMT
US5710449A (en) * 1996-05-22 1998-01-20 Integrated Device Technology, Inc. Memory cell having active regions without N+ implants
JPH1050982A (ja) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JP2891204B2 (ja) * 1996-09-27 1999-05-17 日本電気株式会社 半導体装置の製造方法
US6936839B2 (en) 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
KR100571071B1 (ko) * 1996-12-04 2006-06-21 소니 가부시끼 가이샤 전계효과트랜지스터및그제조방법
JP2904167B2 (ja) * 1996-12-18 1999-06-14 日本電気株式会社 半導体装置の製造方法
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3156620B2 (ja) * 1997-02-12 2001-04-16 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3546634B2 (ja) 1997-03-19 2004-07-28 ソニー株式会社 窒化物系化合物半導体の選択エッチング方法および半導体装置の製造方法
JP3670104B2 (ja) 1997-03-27 2005-07-13 日世株式会社 殺菌済食品の製造方法
US6448648B1 (en) 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
JPH1154527A (ja) * 1997-07-30 1999-02-26 Fujitsu Ltd 電界効果トランジスタおよびその製造方法
KR100307986B1 (ko) * 1997-08-28 2002-05-09 가네꼬 히사시 반도체장치의제조방법
US6242327B1 (en) * 1997-09-19 2001-06-05 Fujitsu Limited Compound semiconductor device having a reduced source resistance
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3372470B2 (ja) 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
JP2002502557A (ja) * 1998-02-09 2002-01-22 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 埋込チャネルｆｅｔを含む半導体デバイスを製造する方法
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (ja) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The 高移動度トランジスタ
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
KR100262940B1 (ko) * 1998-05-29 2000-09-01 이계철 절연막 리프트 오프를 이용한 화합물 반도체 소자 제조 방법
JP3385981B2 (ja) * 1998-06-01 2003-03-10 日本電気株式会社 半導体装置及びその製造方法
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3416532B2 (ja) * 1998-06-15 2003-06-16 富士通カンタムデバイス株式会社 化合物半導体装置及びその製造方法
JP2000196029A (ja) * 1998-12-28 2000-07-14 Sony Corp 半導体装置とその製造方法
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP2000277724A (ja) 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP2000349280A (ja) 1999-06-03 2000-12-15 Nec Corp 半導体装置及びその製造方法並びに半導体基板構造
JP4584379B2 (ja) * 1999-07-16 2010-11-17 三菱電機株式会社 半導体装置の製造方法
US6077733A (en) * 1999-09-03 2000-06-20 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned T-shaped gate through dual damascene
JP4592938B2 (ja) 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
US6639255B2 (en) 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP3393602B2 (ja) 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
JP3362723B2 (ja) * 2000-01-26 2003-01-07 日本電気株式会社 電界効果型トランジスタの製造方法
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP4667556B2 (ja) 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6498111B1 (en) * 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
JP4751498B2 (ja) * 2000-03-30 2011-08-17 富士通株式会社 半導体三端子装置
US6475889B1 (en) 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
JP2002076023A (ja) 2000-09-01 2002-03-15 Nec Corp 半導体装置
JP2002124663A (ja) * 2000-10-13 2002-04-26 Murata Mfg Co Ltd ヘテロ接合電界効果トランジスタ
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Ind Co Ltd Semiconductor device and equipment for communication system
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP2002170949A (ja) 2000-12-01 2002-06-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JP3428962B2 (ja) 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
TW466768B (en) * 2000-12-30 2001-12-01 Nat Science Council An In0.34Al0.66As0.85Sb0.15/InP HFET utilizing InP channels
US6593193B2 (en) 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP3501284B2 (ja) * 2001-03-30 2004-03-02 富士通カンタムデバイス株式会社 半導体装置の製造方法
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
JP2003023015A (ja) 2001-07-06 2003-01-24 Mitsubishi Electric Corp ＧａＡｓ系半導体電界効果トランジスタ
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6853018B2 (en) * 2001-07-19 2005-02-08 Sony Corporation Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region
AU2002357640A1 (en) 2001-07-24 2003-04-22 Cree, Inc. Insulting gate algan/gan hemt
US6734111B2 (en) * 2001-08-09 2004-05-11 Comlase Ab Method to GaAs based lasers and a GaAs based laser
JP2003086608A (ja) * 2001-09-14 2003-03-20 Toshiba Corp 電界効果トランジスタ及びその製造方法
JP2003209124A (ja) * 2001-11-06 2003-07-25 Sony Corp 電界効果半導体素子の製造方法及び電界効果半導体素子
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2003197646A (ja) * 2001-12-27 2003-07-11 Shin Etsu Handotai Co Ltd 電界効果トランジスタ
KR100438895B1 (ko) * 2001-12-28 2004-07-02 한국전자통신연구원 고전자 이동도 트랜지스터 전력 소자 및 그 제조 방법
JP3733420B2 (ja) * 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ
JP3705431B2 (ja) * 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
DE10304722A1 (de) * 2002-05-11 2004-08-19 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
JP3986887B2 (ja) 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US6852615B2 (en) * 2002-06-10 2005-02-08 Hrl Laboratories, Llc Ohmic contacts for high electron mobility transistors and a method of making the same
US6893947B2 (en) * 2002-06-25 2005-05-17 Freescale Semiconductor, Inc. Advanced RF enhancement-mode FETs with improved gate properties
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6740535B2 (en) * 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US6884704B2 (en) 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US6897137B2 (en) * 2002-08-05 2005-05-24 Hrl Laboratories, Llc Process for fabricating ultra-low contact resistances in GaN-based devices
US20040021152A1 (en) 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
JP4385205B2 (ja) * 2002-12-16 2009-12-16 日本電気株式会社 電界効果トランジスタ
US8089097B2 (en) * 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
JP4179539B2 (ja) * 2003-01-15 2008-11-12 富士通株式会社 化合物半導体装置及びその製造方法
JP4746825B2 (ja) 2003-05-15 2011-08-10 富士通株式会社 化合物半導体装置
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US6867078B1 (en) * 2003-11-19 2005-03-15 Freescale Semiconductor, Inc. Method for forming a microwave field effect transistor with high operating voltage
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices

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