JP6381881B2 - 高電子移動度トランジスタ及びその駆動方法 - Google Patents
高電子移動度トランジスタ及びその駆動方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims description 202
- 230000015572 biosynthetic process Effects 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 49
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 17
- 239000011247 coating layer Substances 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- -1 at least one of Al Chemical class 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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Description
110 基板
112 チャネル層
114 チャネル供給層
121 第1ゲート電極
122 第2ゲート電極
130 空乏形成層
151 ソース電極
152 ドレイン電極
200 高電子移動度トランジスタ
210 基板
212 チャネル層
214 チャネル供給層
221 第1ゲート電極
222 第2ゲート電極
230 空乏形成層
231 コーティング層
251 ソース電極
252 ドレイン電極
300 高電子移動度トランジスタ
310 基板
312 チャネル層
314 チャネル供給層
321 第1ゲート電極
322 第2ゲート電極
330 空乏形成層
351 ソース電極
352 ドレイン電極
Claims (16)
- 第1半導体物質を含むチャネル層と、
第2半導体物質を含み、前記チャネル層に2次元電子ガスを引き起こすチャネル供給層と、
前記チャネル供給層の両側に設けられるソース電極及びドレイン電極と、
前記チャネル供給層上に設けられ、前記2次元電子ガスに空乏領域を形成する空乏形成層と、
前記ソース電極と前記ドレイン電極との間の前記空乏形成層上に設けられる第1ゲート電極と、
前記ソース電極と前記第1ゲート電極との間の前記空乏形成層上に、前記第1ゲート電極と離隔して設けられる少なくとも一つの第2ゲート電極と、を含み、
前記第1ゲート電極と前記第2ゲート電極とが前記空乏形成層によって互いに連結され、
前記第2ゲート電極が、前記第1ゲート電極に第1ゲート電圧が印加されるにつれて第2ゲート電圧が誘導されるフローティング電極である、高電子移動度トランジスタ。 - 前記第2ゲート電極には、前記空乏形成層を通じて第2ゲート電圧が誘導される、請求項1に記載の高電子移動度トランジスタ。
- 前記第1ゲート電極と前記第2ゲート電極との間で、前記空乏形成層がストリップ状に形成される、請求項2に記載の高電子移動度トランジスタ。
- 前記第2ゲート電極と前記ソース電極とが前記空乏形成層によって互いに連結される、請求項2に記載の高電子移動度トランジスタ。
- 前記ソース電極と前記第2ゲート電極との間で、前記空乏形成層がストリップ状に形成される、請求項4に記載の高電子移動度トランジスタ。
- 前記チャネル供給層の上面の少なくとも一部を覆うコーティング層をさらに含む、請求項1に記載の高電子移動度トランジスタ。
- 前記コーティング層が前記空乏形成層と同じ物質を含む、請求項6に記載の高電子移動度トランジスタ。
- 前記コーティング層が前記空乏形成層より薄い厚さに形成される、請求項7に記載の高電子移動度トランジスタ。
- 前記第2ゲート電極には、前記チャネル供給層を通じて第2ゲート電圧が誘導される、請求項1に記載の高電子移動度トランジスタ。
- 前記第2ゲート電極に誘導される前記第2ゲート電圧が、前記第1ゲート電極に印加された前記第1ゲート電圧、前記第1ゲート電極と前記第2ゲート電極との間隔及び前記第2ゲート電極と前記ソース電極との間隔によって定められる、請求項1に記載の高電子移動度トランジスタ。
- 前記高電子移動度トランジスタのしきい電圧が、前記第2ゲート電極に誘導される前記第2ゲート電圧によって定められる、請求項10に記載の高電子移動度トランジスタ。
- 前記第1半導体物質は、GaN系物質である、請求項1に記載の高電子移動度トランジスタ。
- 前記第2半導体物質が、Al、Ga、In及びBのうち少なくとも一つを含む窒化物から選択された少なくとも一つである、請求項1に記載の高電子移動度トランジスタ。
- 前記空乏形成層がp型半導体物質を含む、請求項1に記載の高電子移動度トランジスタ。
- 前記空乏形成層がIII−V族系列の窒化物半導体物質を含む、請求項13に記載の高電子移動度トランジスタ。
- 請求項1から15のいずれか一項に記載の高電子移動度トランジスタを駆動する方法において、
前記第1ゲート電極に第1ゲート電圧を印加することで、フローティング電極である前記第2ゲート電極に第2ゲート電圧を誘導する、高電子移動度トランジスタの駆動方法。
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KR1020120113034A KR101946009B1 (ko) | 2012-10-11 | 2012-10-11 | 고전자이동도 트랜지스터 및 그 구동방법 |
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US9147738B2 (en) * | 2012-11-30 | 2015-09-29 | Samsung Electronics Co., Ltd. | High electron mobility transistor including plurality of gate electrodes |
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KR102100928B1 (ko) * | 2013-10-17 | 2020-05-15 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 |
US10530360B2 (en) * | 2016-02-29 | 2020-01-07 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
CN107154430B (zh) * | 2016-03-04 | 2020-06-16 | 北京大学 | 双向开关晶体管 |
CN107154397A (zh) * | 2016-03-04 | 2017-09-12 | 北京大学 | 双向开关晶体管制作方法和双向开关晶体管 |
WO2018004650A1 (en) * | 2016-07-01 | 2018-01-04 | Intel Corporation | 1t-1r rram cell including group iii-n access transistor |
US10854718B2 (en) | 2017-02-21 | 2020-12-01 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
GB2564482B (en) * | 2017-07-14 | 2021-02-10 | Cambridge Entpr Ltd | A power semiconductor device with a double gate structure |
US11257811B2 (en) | 2017-07-14 | 2022-02-22 | Cambridge Enterprise Limited | Power semiconductor device with an auxiliary gate structure |
US11336279B2 (en) * | 2017-07-14 | 2022-05-17 | Cambridge Enterprise Limited | Power semiconductor device with a series connection of two devices |
CN107527952B (zh) * | 2017-08-28 | 2021-02-12 | 电子科技大学 | 一种Nano-Fin栅结构的混合阳极二极管 |
JP7316757B2 (ja) * | 2018-02-23 | 2023-07-28 | ローム株式会社 | 半導体装置 |
US10833063B2 (en) * | 2018-07-25 | 2020-11-10 | Vishay SIliconix, LLC | High electron mobility transistor ESD protection structures |
JP6689424B2 (ja) * | 2019-03-08 | 2020-04-28 | ローム株式会社 | 半導体装置 |
US11955478B2 (en) * | 2019-05-07 | 2024-04-09 | Cambridge Gan Devices Limited | Power semiconductor device with an auxiliary gate structure |
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