JP2011243986A5 - - Google Patents

Download PDF

Info

Publication number
JP2011243986A5
JP2011243986A5 JP2011109286A JP2011109286A JP2011243986A5 JP 2011243986 A5 JP2011243986 A5 JP 2011243986A5 JP 2011109286 A JP2011109286 A JP 2011109286A JP 2011109286 A JP2011109286 A JP 2011109286A JP 2011243986 A5 JP2011243986 A5 JP 2011243986A5
Authority
JP
Japan
Prior art keywords
field effect
effect device
dielectric constant
insulating material
organic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011109286A
Other languages
English (en)
Japanese (ja)
Other versions
JP5727293B2 (ja
JP2011243986A (ja
Filing date
Publication date
Priority claimed from GB0130321A external-priority patent/GB0130321D0/en
Priority claimed from GB0130451A external-priority patent/GB0130451D0/en
Priority claimed from GB0220504A external-priority patent/GB0220504D0/en
Application filed filed Critical
Publication of JP2011243986A publication Critical patent/JP2011243986A/ja
Publication of JP2011243986A5 publication Critical patent/JP2011243986A5/ja
Application granted granted Critical
Publication of JP5727293B2 publication Critical patent/JP5727293B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2011109286A 2001-12-19 2011-05-16 有機誘電体を有する有機電界効果トランジスタ Expired - Lifetime JP5727293B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0130321A GB0130321D0 (en) 2001-12-19 2001-12-19 Electronic devices
GB0130321.3 2001-12-19
GB0130451.8 2001-12-20
GB0130451A GB0130451D0 (en) 2001-12-20 2001-12-20 Electronic devices
GB0220504.5 2002-09-03
GB0220504A GB0220504D0 (en) 2002-09-03 2002-09-03 Electronic devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003553638A Division JP2005513788A (ja) 2001-12-19 2002-11-21 有機誘電体を有する有機電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2011243986A JP2011243986A (ja) 2011-12-01
JP2011243986A5 true JP2011243986A5 (enExample) 2012-05-17
JP5727293B2 JP5727293B2 (ja) 2015-06-03

Family

ID=27256358

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2003553638A Pending JP2005513788A (ja) 2001-12-19 2002-11-21 有機誘電体を有する有機電界効果トランジスタ
JP2011109286A Expired - Lifetime JP5727293B2 (ja) 2001-12-19 2011-05-16 有機誘電体を有する有機電界効果トランジスタ
JP2011109287A Expired - Lifetime JP5727294B2 (ja) 2001-12-19 2011-05-16 有機誘電体を有する有機電界効果トランジスタ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2003553638A Pending JP2005513788A (ja) 2001-12-19 2002-11-21 有機誘電体を有する有機電界効果トランジスタ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011109287A Expired - Lifetime JP5727294B2 (ja) 2001-12-19 2011-05-16 有機誘電体を有する有機電界効果トランジスタ

Country Status (9)

Country Link
US (1) US7029945B2 (enExample)
EP (3) EP1459392B1 (enExample)
JP (3) JP2005513788A (enExample)
KR (1) KR100949304B1 (enExample)
AT (1) ATE525757T1 (enExample)
AU (1) AU2002343058A1 (enExample)
CA (1) CA2469912A1 (enExample)
NO (1) NO20043049L (enExample)
WO (1) WO2003052841A1 (enExample)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241528A (ja) * 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors
WO2005001940A1 (ja) * 2003-06-27 2005-01-06 Tdk Coroporation 電界効果トランジスタ
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP4325479B2 (ja) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
JP2005079549A (ja) * 2003-09-03 2005-03-24 Victor Co Of Japan Ltd 有機薄膜トランジスタ
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
JP5089986B2 (ja) 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
US7256436B2 (en) 2004-03-30 2007-08-14 Shin-Etsu Chemical Co., Ltd. Thin-film field-effect transistors and making method
JP4449549B2 (ja) * 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
KR20070106976A (ko) * 2004-09-14 2007-11-06 노오쓰웨스턴 유니버시티 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
KR100669752B1 (ko) * 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
KR101122231B1 (ko) * 2004-12-17 2012-03-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101142998B1 (ko) 2004-12-20 2012-05-08 재단법인서울대학교산학협력재단 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법
EP1839339A2 (en) 2004-12-23 2007-10-03 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
JP2006229053A (ja) * 2005-02-18 2006-08-31 Ricoh Co Ltd 有機半導体層を有する電界効果型有機薄膜トランジスタ
WO2006087680A1 (en) 2005-02-18 2006-08-24 Koninklijke Philips Electronics N.V. Electronic device
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
JP4450214B2 (ja) * 2005-03-11 2010-04-14 セイコーエプソン株式会社 有機薄膜トランジスタ、電子デバイスおよび電子機器
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
WO2006100545A1 (en) * 2005-03-23 2006-09-28 Turkiye Sise Ve Cam Fabrikalari A.S. Perylene imide/diimide based organic field effect transistors-ofets and a method of producing the same
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
EP1986247A1 (en) 2005-05-12 2008-10-29 MERCK PATENT GmbH Polyacene and semiconductor Formulation
TW200703664A (en) * 2005-05-31 2007-01-16 Nat University Iwate Univ Inc Organic thin film transistor
CN101223439B (zh) 2005-07-19 2012-01-18 皇家飞利浦电子股份有限公司 流体分析仪
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
US7781757B2 (en) 2005-08-24 2010-08-24 Sanyo Electric Co., Ltd. Organic semiconductor material, organic semiconductor element and field effect transistor using the same
TWI261361B (en) * 2005-08-31 2006-09-01 Ind Tech Res Inst Organic thin-film transistor structure and method for fabricating the same is provided
WO2007029971A1 (en) * 2005-09-07 2007-03-15 Iferro Co., Ltd. Method of forming organic layer on semiconductor substrate
US20070075308A1 (en) 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
US7488834B2 (en) 2005-09-30 2009-02-10 Alcatel-Lucent Usa Inc. Organic semiconductors
US7569415B2 (en) 2005-09-30 2009-08-04 Alcatel-Lucent Usa Inc. Liquid phase fabrication of active devices including organic semiconductors
CN100511751C (zh) * 2005-10-17 2009-07-08 中国科学院化学研究所 一种有机场效应晶体管及其制备方法
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
DE102005059608B4 (de) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7425723B2 (en) * 2005-12-21 2008-09-16 Xerox Corporation Organic thin-film transistors
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
KR101225372B1 (ko) * 2005-12-29 2013-01-22 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법과 그 박막트랜지스터를포함하는 평판 표시 장치
DE102006055067B4 (de) * 2005-12-29 2017-04-20 Lg Display Co., Ltd. Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung
GB2449023B (en) 2006-01-21 2011-06-15 Merck Patent Gmbh Electronic short channel device comprising an organic semiconductor formulation
JP5062435B2 (ja) * 2006-02-27 2012-10-31 株式会社村田製作所 電界効果トランジスタ
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
DE112007000699T5 (de) 2006-05-12 2009-06-04 Merck Patent Gmbh Auf Indenofluorenpolymeren basierende organische Halbleitermaterialien
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
JP5256583B2 (ja) * 2006-05-29 2013-08-07 大日本印刷株式会社 有機半導体素子、および、有機半導体素子の製造方法
JP2007318025A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd 有機半導体素子、および、有機半導体素子の製造方法
US7919825B2 (en) * 2006-06-02 2011-04-05 Air Products And Chemicals, Inc. Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US7528448B2 (en) 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US8308886B2 (en) 2006-07-17 2012-11-13 E I Du Pont De Nemours And Company Donor elements and processes for thermal transfer of nanoparticle layers
US8062824B2 (en) 2006-07-17 2011-11-22 E. I. Du Pont De Nemours And Company Thermally imageable dielectric layers, thermal transfer donors and receivers
US8471064B2 (en) 2006-07-21 2013-06-25 Merck Patent Gmbh Copolymers of indenofluorene and thiophene
US20080224127A1 (en) * 2006-08-22 2008-09-18 Marks Tobin J Gate dielectric structures, organic semiconductors, thin film transistors and related methods
KR100794720B1 (ko) 2006-08-28 2008-01-21 경희대학교 산학협력단 유기 박막 트랜지스터 표시판 및 그 제조 방법
WO2008065927A1 (fr) * 2006-11-27 2008-06-05 Zeon Corporation Transistor à film fin organique, élément électronique composite organique, procédé de fabrication d'un tel transistor et d'un tel élément, écran d'affichage et mémoire
WO2008066826A1 (en) 2006-11-28 2008-06-05 Polyera Corporation Photopolymer-based dielectric materials and methods of preparation and use thereof
EP1936712A1 (en) * 2006-12-23 2008-06-25 ETH Zürich Organic field-effect transistors with polymeric gate dielectric and method for making same
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
EP2140510A1 (en) * 2007-04-25 2010-01-06 Merck Patent GmbH Process for preparing an electronic device
GB0709093D0 (en) * 2007-05-11 2007-06-20 Plastic Logic Ltd Electronic device incorporating parylene within a dielectric bilayer
GB2450382B (en) * 2007-06-22 2009-09-09 Cambridge Display Tech Ltd Organic thin film transistors, organic light-emissive devices and organic light-emissive displays
WO2009013291A2 (en) * 2007-07-25 2009-01-29 Basf Se Field effect elements
FR2919521B1 (fr) * 2007-08-01 2012-03-09 Commissariat Energie Atomique Couche d'accroche sur des polymeres fluores
TWI345671B (en) * 2007-08-10 2011-07-21 Au Optronics Corp Thin film transistor, pixel structure and liquid crystal display panel
KR20090065254A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터
US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
JP2009224689A (ja) * 2008-03-18 2009-10-01 Sanyo Electric Co Ltd 有機トランジスタ及びその製造方法
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
KR101581065B1 (ko) * 2008-04-24 2015-12-29 메르크 파텐트 게엠베하 전자 디바이스
FR2934714B1 (fr) * 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
CN102124044B (zh) 2008-08-18 2014-09-10 默克专利股份有限公司 引达省并二噻吩和引达省并二硒吩聚合物以及它们作为有机半导体的用途
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
RU2513643C2 (ru) 2008-09-19 2014-04-20 Мерк Патент Гмбх Полимеры, производные бензобис(силолотиофена), и их применение в качестве органических полупроводников
DE112009001782T5 (de) 2008-09-19 2011-07-28 Merck Patent GmbH, 64293 Von Bis(Thienocyclopenta) benzothiadiazol abgeleitete Polymere und ihre Verwendung als organische Halbleiter
JP2010093093A (ja) * 2008-10-09 2010-04-22 Hitachi Ltd 半導体装置およびその製造方法
JP5449736B2 (ja) * 2008-10-09 2014-03-19 株式会社日立製作所 ボトムゲート型有機薄膜トランジスタ及びその製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
KR101935644B1 (ko) 2008-10-31 2019-01-04 바스프 에스이 유기 전계 효과 트랜지스터에 사용하기 위한 디케토피롤로피롤 중합체
JP2010163521A (ja) 2009-01-14 2010-07-29 Sumitomo Chemical Co Ltd 絶縁層用樹脂組成物
FR2945669B1 (fr) * 2009-05-14 2011-12-30 Commissariat Energie Atomique Transistor organique a effet de champ
JP5886189B2 (ja) 2009-05-25 2016-03-16 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 架橋可能な誘電体、並びにその製造方法及び使用方法
BRPI1011853A2 (pt) 2009-05-27 2019-09-24 Basf Se polímero, material, camada ou componente semicondutores orgânicos, dispositivo semicondutor, processos para a preparação de um dispositivo semicondutor orgânico, e de um polímero, e, uso do polímero e/ou do material, camada ou componente semicondutores orgãnicos.
WO2010136401A2 (en) * 2009-05-27 2010-12-02 Basf Se Polycyclic dithiophenes
JP5458669B2 (ja) * 2009-05-28 2014-04-02 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
EP2277944A3 (en) * 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition for organic dielectric and organic thin film transistor formed using the same
GB2474827A (en) * 2009-08-04 2011-05-04 Cambridge Display Tech Ltd Surface modification
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
US8164089B2 (en) 2009-10-08 2012-04-24 Xerox Corporation Electronic device
US20120256166A1 (en) * 2009-12-17 2012-10-11 Merck Patent Gesellschaft Mit Beschrankter Haftung Deposition of nanoparticles
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
JP2011187626A (ja) * 2010-03-08 2011-09-22 Sony Corp 薄膜トランジスタおよび電子機器
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
KR101839636B1 (ko) 2010-05-19 2018-03-16 바스프 에스이 유기 반도체 소자에 사용하기 위한 디케토피롤로피롤 중합체
JP5659568B2 (ja) * 2010-06-11 2015-01-28 富士ゼロックス株式会社 電界効果型有機トランジスタ
TW201213345A (en) * 2010-06-17 2012-04-01 Sumitomo Chemical Co Optical-energy crosslinkable organic thin film transistor insulation layer material, overcoat insulation layer and organic thin film transistor
KR20130094773A (ko) 2010-06-24 2013-08-26 바스프 에스이 온/오프 전류비가 개선되고 임계 이동이 제어가능한 유기 전계 효과 트랜지스터
WO2012013508A1 (en) 2010-07-30 2012-02-02 Basf Se Amphiphilic protein in printed electronics
WO2012017005A2 (en) 2010-08-05 2012-02-09 Basf Se Polymers based on benzodiones
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
TWI488845B (zh) * 2010-08-30 2015-06-21 Sumitomo Chemical Co 有機薄膜電晶體絕緣層用組成物及有機薄膜電晶體
JP6097216B2 (ja) * 2010-09-02 2017-03-15 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 電子デバイス用のゲート絶縁層
WO2012028278A1 (en) 2010-09-02 2012-03-08 Merck Patent Gmbh Interlayer for electronic devices
RU2012134704A (ru) * 2010-09-07 2014-10-20 Ниппон Каяку Кабушики Каиша Органический полупроводниковый материал, органический полупроводниковый состав, органическая тонкая пленка, полевой транзистор и способ их получения
CN103403903B (zh) * 2010-10-07 2017-02-15 乔治亚州技术研究公司 场效应晶体管及其制造方法
GB201105482D0 (en) 2011-03-31 2011-05-18 Imp Innovations Ltd Polymers
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB201108864D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
EP2740167B1 (en) 2011-08-03 2018-12-26 Universita' Degli Studi Di Cagliari Method of manufacturing low voltage organic transistor
FR2980040B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor organique a effet de champ
FR2980041B1 (fr) 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor a effet de champ comprenant un limiteur de courant de fuite
WO2013050401A2 (en) 2011-10-04 2013-04-11 Basf Se Polymers based on benzodiones
US9543521B2 (en) 2011-11-15 2017-01-10 Basf Se Organic semiconductor device and process for its production
WO2013083506A1 (en) 2011-12-07 2013-06-13 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
JP6157497B2 (ja) 2011-12-07 2017-07-05 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 有機電界効果トランジスタ
PL397479A1 (pl) 2011-12-21 2013-06-24 Instytut Chemii Organicznej Polskiej Akademii Nauk Nowe, fluorescencyjne barwniki heterocykliczne i sposób ich otrzymywania
US9505877B2 (en) 2012-04-02 2016-11-29 Basf Se Phenanthro[9,10-B]furan polymers and small molecules for electronic applications
TWI500162B (zh) * 2012-04-03 2015-09-11 E Ink Holdings Inc 薄膜電晶體及其製造方法
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
KR102079604B1 (ko) 2012-04-04 2020-04-08 바스프 에스이 디케토피롤로피롤 중합체 및 소분자
WO2013159881A2 (en) 2012-04-25 2013-10-31 Merck Patent Gmbh Bank structures for organic electronic devices
US20150155494A1 (en) 2012-07-13 2015-06-04 Merck Patent Gmbh Organic electronic device comprising an organic semiconductors formulation
JP6207606B2 (ja) 2012-07-23 2017-10-04 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ジチエノベンゾフランポリマーおよび電子的な応用のための小分子
CN104521019B (zh) 2012-08-09 2018-12-07 默克专利股份有限公司 有机半导体配制剂
EP2891670B1 (en) * 2012-08-31 2017-02-01 Asahi Glass Company, Limited Curable composition and method for producing cured film
JP6036064B2 (ja) * 2012-09-13 2016-11-30 富士ゼロックス株式会社 有機半導体トランジスタ
WO2014044359A1 (en) 2012-09-21 2014-03-27 Merck Patent Gmbh Organic semiconductor formulations
WO2014053202A1 (en) 2012-10-04 2014-04-10 Merck Patent Gmbh Passivation layers for organic electronic devices
EP2917304B1 (en) 2012-11-07 2016-10-26 Basf Se Polymers based on naphthodiones
WO2014086722A1 (en) 2012-12-04 2014-06-12 Basf Se Functionnalized benzodithiophene polymers for electronic application
KR102173448B1 (ko) 2013-05-06 2020-11-04 주식회사 클랩 유기 전자 응용품 내의 유전체로서의 가용성 시클릭 이미드 함유 중합체
JP6191235B2 (ja) * 2013-05-20 2017-09-06 富士電機株式会社 有機トランジスタ及びその製造方法
CN105324441B (zh) 2013-06-24 2018-01-02 巴斯夫欧洲公司 基于稠合二酮基吡咯并吡咯的聚合物
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
TWI628719B (zh) 2013-11-21 2018-07-01 尼康股份有限公司 電晶體之製造方法及電晶體
US9330809B2 (en) 2013-12-17 2016-05-03 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
US9336921B2 (en) 2013-12-17 2016-05-10 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
WO2017068009A1 (en) 2015-10-21 2017-04-27 Basf Se Polymers and compounds based on dipyrrolo[1,2-b:1',2'-g][2,6]naphthyridine-5,11-dione
CN105404046B (zh) * 2015-12-04 2018-06-01 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
DE102016104254A1 (de) * 2016-03-09 2017-10-26 Friedrich-Schiller-Universität Jena Verfahren zur Herstellung einer halbleitenden Folie und elektronisches Bauelement
WO2017202635A1 (en) 2016-05-25 2017-11-30 Basf Se Semiconductors
TW201832012A (zh) * 2017-01-20 2018-09-01 日商富士軟片股份有限公司 保護層形成用組成物、積層體及套組
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN109088000B (zh) * 2018-08-22 2022-04-12 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
DE102019200810B4 (de) 2019-01-23 2023-12-07 Technische Universität Dresden Organischer dünnschicht-transistor und verfahren zur herstellung desselben
CN114450812A (zh) * 2019-06-24 2022-05-06 弗莱克英纳宝有限公司 通过调节机械性能对电介质的应力响应和粘附行为的改变
GB201919031D0 (en) 2019-12-20 2020-02-05 Smartkem Ltd Sputter protective layer for organic electronic devices
US12096641B2 (en) * 2020-06-03 2024-09-17 Purdue Research Foundation Polyimide-based transistor devices and methods of fabricating the same
CN113299831B (zh) * 2021-05-21 2023-03-24 西安电子科技大学 基于三层绝缘介质的低功耗柔性薄膜晶体管及其制作方法
CN113410385A (zh) * 2021-06-15 2021-09-17 南方科技大学 一种低压浮栅光电存储器及制备方法
CN116234326A (zh) * 2023-03-30 2023-06-06 南京邮电大学 一种基于氟化聚合物电介质的有机场效应晶体管制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565860A (en) * 1984-04-09 1986-01-21 Nissan Motor Co., Ltd. Polymer of triphenylamine
DE3751502T2 (de) * 1986-03-11 1996-02-15 Kanegafuchi Chemical Ind Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.
DE3610649A1 (de) 1986-03-29 1987-10-01 Basf Ag Polymere mit triphenylamineinheiten
JP2651691B2 (ja) * 1988-03-03 1997-09-10 バンドー化学株式会社 新規な芳香族アミン化合物
JP2533943B2 (ja) 1989-08-01 1996-09-11 キヤノン株式会社 電子写真感光体の製造法
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JPH07221367A (ja) 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd 配向積層膜とその製造方法及びそれを用いた有機電子素子とその製造方法
GB9403503D0 (en) 1994-02-24 1994-04-13 Inmos Ltd Memory cell
JP2725591B2 (ja) * 1994-03-10 1998-03-11 日本電気株式会社 電界効果型トランジスタ
US5681664A (en) 1994-08-04 1997-10-28 Toyo Ink Manufacturing Co., Ltd. Hole-transporting material and use thereof
US5677096A (en) 1995-09-19 1997-10-14 Ricoh Company, Ltd. Electrophotographic photoconductor
EP0765106B1 (en) 1995-09-25 2002-11-27 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organic electroluminescence device, and organic electroluminescence device for which the light-emitting material is adapted
US6326640B1 (en) 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
AU2277697A (en) 1996-02-23 1997-09-22 Dow Chemical Company, The Cross-linkable or chain extendable polyarylpolyamines and films thereof
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
US5981970A (en) * 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
JPH10335671A (ja) * 1997-06-02 1998-12-18 Sharp Corp ドライバーモノリシック駆動素子
US5879821A (en) * 1997-11-13 1999-03-09 Xerox Corporation Electroluminescent polymer compositions and processes thereof
GB9726810D0 (en) 1997-12-19 1998-02-18 Zeneca Ltd Compounds composition & use
WO2000078843A1 (en) 1997-12-19 2000-12-28 Avecia Limited Process for the isolation of polymer fractions
US6204515B1 (en) * 1999-01-15 2001-03-20 The Dow Chemical Company Semiconducting polymer field effect transistor
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP2000275678A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
JP5167569B2 (ja) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド トランジスタの製造方法
DE60033012T2 (de) * 1999-09-10 2007-09-13 Koninklijke Philips Electronics N.V. Leitende struktur basierend auf poly-3,4-alkendioxythiophen (pedot) und polystyrolsulfonsäure (pss)
JP2001094107A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2003518754A (ja) 1999-12-21 2003-06-10 プラスティック ロジック リミテッド 溶液処理された素子
GB0028867D0 (en) * 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
KR100961251B1 (ko) 2001-10-01 2010-06-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 조성물, 전자 디바이스 및 전자 디바이스의 제조 방법
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
US6946676B2 (en) 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
CN1157807C (zh) * 2001-11-09 2004-07-14 清华大学 一种有机薄膜场效应晶体管及其制备方法
US6912473B2 (en) * 2002-06-28 2005-06-28 International Business Machines Corporation Method for verifying cross-sections

Similar Documents

Publication Publication Date Title
JP2011243986A5 (enExample)
JP2011254075A5 (enExample)
Kang et al. Decorating TiO2 nanowires with BaTiO3 nanoparticles: a new approach leading to substantially enhanced energy storage capability of high-k polymer nanocomposites
Wang et al. Polymer-based gate dielectrics for organic field-effect transistors
CN106463618B (zh) 电容器及其制造方法
JP2017126566A5 (enExample)
KR101802692B1 (ko) 강유전체 커패시터-계 메모리 기기
Kang et al. Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals
Park et al. Studies on poly (methyl methacrylate) dielectric layer for field effect transistor: Influence of polymer tacticity
EP3192099B1 (en) Methods for producing a thin film ferroelectric device using a two-step temperature process
US20110110015A1 (en) Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same
JP6849673B2 (ja) 固体接合型光電変換素子、及びその製造方法
Na et al. Nanodroplet-embedded semiconducting polymer layers for electrochemically stable and high-conductance organic electrolyte-gated transistors
Xia et al. Epitaxy of ferroelectric P (VDF-TrFE) films via removable PTFE templates and its application in semiconducting/ferroelectric blend resistive memory
JP2015057785A5 (enExample)
US10347423B2 (en) Solid multilayer structure as semiproduct for meta-capacitor
KR20170041064A (ko) 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치
JP6191235B2 (ja) 有機トランジスタ及びその製造方法
KR101735207B1 (ko) 탄소나노튜브가 포함된 유기반도체층, 이의 제조방법 및 이를 이용한 박막트랜지스터
JP2016178167A (ja) 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池
JP2010141142A (ja) 薄膜トランジスタおよびその製造方法、並びに表示装置
EP3419068A1 (en) Solid junction-type photoelectric transducer and method for producing same
KR20160013291A (ko) 광자 결정 소자, 상기 광자 결정 소자 제조 방법 및 상기 광자결정 소자를 포함하는 반사형 디스플레이 장치
CN204441338U (zh) 柔性衬底
KR101720626B1 (ko) 폴리이미드 및 폴리비닐알콜을 포함하는 이중층 유기 절연체 및 이를 이용한 박막 트랜지스터