AU2002343058A1 - Organic field effect transistor with an organic dielectric - Google Patents

Organic field effect transistor with an organic dielectric Download PDF

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Publication number
AU2002343058A1
AU2002343058A1 AU2002343058A AU2002343058A AU2002343058A1 AU 2002343058 A1 AU2002343058 A1 AU 2002343058A1 AU 2002343058 A AU2002343058 A AU 2002343058A AU 2002343058 A AU2002343058 A AU 2002343058A AU 2002343058 A1 AU2002343058 A1 AU 2002343058A1
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AU
Australia
Prior art keywords
organic
field effect
effect device
insulating material
organic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002343058A
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English (en)
Inventor
Stephen William Leeming
Soad Mohialdin-Khaffaf
Simon Dominic Ogier
Janos Veres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
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Merck Patent GmbH
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27256358&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU2002343058(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from GB0130321A external-priority patent/GB0130321D0/en
Priority claimed from GB0130451A external-priority patent/GB0130451D0/en
Priority claimed from GB0220504A external-priority patent/GB0220504D0/en
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of AU2002343058A1 publication Critical patent/AU2002343058A1/en
Assigned to MERCK PATENT GMBH reassignment MERCK PATENT GMBH Request for Assignment Assignors: AVECIA LIMITED
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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    • C09B57/008—Triarylamine dyes containing no other chromophores
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    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
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    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
    • C08G2261/3162—Arylamines
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    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2002343058A 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric Abandoned AU2002343058A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0130321A GB0130321D0 (en) 2001-12-19 2001-12-19 Electronic devices
GB0130321.3 2001-12-19
GB0130451A GB0130451D0 (en) 2001-12-20 2001-12-20 Electronic devices
GB0130451.8 2001-12-20
GB0220504A GB0220504D0 (en) 2002-09-03 2002-09-03 Electronic devices
GB0220504.5 2002-09-03
PCT/GB2002/005248 WO2003052841A1 (en) 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric

Publications (1)

Publication Number Publication Date
AU2002343058A1 true AU2002343058A1 (en) 2003-06-30

Family

ID=27256358

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002343058A Abandoned AU2002343058A1 (en) 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric

Country Status (9)

Country Link
US (1) US7029945B2 (enExample)
EP (3) EP1459392B1 (enExample)
JP (3) JP2005513788A (enExample)
KR (1) KR100949304B1 (enExample)
AT (1) ATE525757T1 (enExample)
AU (1) AU2002343058A1 (enExample)
CA (1) CA2469912A1 (enExample)
NO (1) NO20043049L (enExample)
WO (1) WO2003052841A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109088000A (zh) * 2018-08-22 2018-12-25 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法

Families Citing this family (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241528A (ja) * 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors
WO2005001940A1 (ja) * 2003-06-27 2005-01-06 Tdk Coroporation 電界効果トランジスタ
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP4325479B2 (ja) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
JP2005079549A (ja) * 2003-09-03 2005-03-24 Victor Co Of Japan Ltd 有機薄膜トランジスタ
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
EP1808866A1 (en) 2003-11-28 2007-07-18 Merck Patent GmbH Organic semiconducting layer formulations comprising polyacenes and organic binder polymers
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
US7256436B2 (en) 2004-03-30 2007-08-14 Shin-Etsu Chemical Co., Ltd. Thin-film field-effect transistors and making method
JP4449549B2 (ja) * 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
GB2418062A (en) 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
CA2579407A1 (en) * 2004-09-14 2006-03-14 Northwestern University Carbonyl-functionalized thiophene compounds and related device stuctures
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
KR100669752B1 (ko) * 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
KR101122231B1 (ko) * 2004-12-17 2012-03-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101142998B1 (ko) 2004-12-20 2012-05-08 재단법인서울대학교산학협력재단 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법
US7605394B2 (en) * 2004-12-23 2009-10-20 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
JP2006229053A (ja) * 2005-02-18 2006-08-31 Ricoh Co Ltd 有機半導体層を有する電界効果型有機薄膜トランジスタ
CN101120457B (zh) 2005-02-18 2011-04-27 皇家飞利浦电子股份有限公司 电子器件
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
JP4450214B2 (ja) * 2005-03-11 2010-04-14 セイコーエプソン株式会社 有機薄膜トランジスタ、電子デバイスおよび電子機器
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
EP1922773B1 (en) * 2005-03-23 2013-12-25 Türkiye Sise Ve Cam Fabrikalari A.S. Perylene imide/diimide based organic field effect transistors-ofets and a method of producing the same
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
JP5155153B2 (ja) 2005-05-12 2013-02-27 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ポリアセンおよび半導体調製物
TW200703664A (en) * 2005-05-31 2007-01-16 Nat University Iwate Univ Inc Organic thin film transistor
WO2007010425A1 (en) 2005-07-19 2007-01-25 Koninklijke Philips Electronics N.V. Fluid analyser
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
US7781757B2 (en) 2005-08-24 2010-08-24 Sanyo Electric Co., Ltd. Organic semiconductor material, organic semiconductor element and field effect transistor using the same
TWI261361B (en) * 2005-08-31 2006-09-01 Ind Tech Res Inst Organic thin-film transistor structure and method for fabricating the same is provided
WO2007029971A1 (en) * 2005-09-07 2007-03-15 Iferro Co., Ltd. Method of forming organic layer on semiconductor substrate
US7569415B2 (en) 2005-09-30 2009-08-04 Alcatel-Lucent Usa Inc. Liquid phase fabrication of active devices including organic semiconductors
US7488834B2 (en) 2005-09-30 2009-02-10 Alcatel-Lucent Usa Inc. Organic semiconductors
US20070075308A1 (en) 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
CN100511751C (zh) * 2005-10-17 2009-07-08 中国科学院化学研究所 一种有机场效应晶体管及其制备方法
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
DE102005059608B4 (de) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7425723B2 (en) * 2005-12-21 2008-09-16 Xerox Corporation Organic thin-film transistors
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
DE102006055067B4 (de) 2005-12-29 2017-04-20 Lg Display Co., Ltd. Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung
KR101225372B1 (ko) * 2005-12-29 2013-01-22 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법과 그 박막트랜지스터를포함하는 평판 표시 장치
KR20080096781A (ko) 2006-01-21 2008-11-03 메르크 파텐트 게엠베하 유기 반도체 조성물을 포함하는 전자 단채널 소자
JP5062435B2 (ja) * 2006-02-27 2012-10-31 株式会社村田製作所 電界効果トランジスタ
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
EP2018674A1 (en) 2006-05-12 2009-01-28 Merck Patent GmbH Indenofluorene polymer based organic semiconductor materials
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
JP2007318025A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd 有機半導体素子、および、有機半導体素子の製造方法
JP5256583B2 (ja) * 2006-05-29 2013-08-07 大日本印刷株式会社 有機半導体素子、および、有機半導体素子の製造方法
US7919825B2 (en) * 2006-06-02 2011-04-05 Air Products And Chemicals, Inc. Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US8308886B2 (en) 2006-07-17 2012-11-13 E I Du Pont De Nemours And Company Donor elements and processes for thermal transfer of nanoparticle layers
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US8062824B2 (en) 2006-07-17 2011-11-22 E. I. Du Pont De Nemours And Company Thermally imageable dielectric layers, thermal transfer donors and receivers
ATE538157T1 (de) 2006-07-21 2012-01-15 Merck Patent Gmbh Indenofluoren- und thiophen-copolymere
US20080224127A1 (en) * 2006-08-22 2008-09-18 Marks Tobin J Gate dielectric structures, organic semiconductors, thin film transistors and related methods
KR100794720B1 (ko) 2006-08-28 2008-01-21 경희대학교 산학협력단 유기 박막 트랜지스터 표시판 및 그 제조 방법
TW200830595A (en) * 2006-11-27 2008-07-16 Nat University Iwate Univ Inc Organic thin film transistor, organic composite electronic element, method for manufacturing such transistor and element, and display device and memory
US7981989B2 (en) * 2006-11-28 2011-07-19 Polyera Corporation Photopolymer-based dielectric materials and methods of preparation and use thereof
EP1936712A1 (en) * 2006-12-23 2008-06-25 ETH Zürich Organic field-effect transistors with polymeric gate dielectric and method for making same
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
KR101475097B1 (ko) * 2007-04-25 2014-12-23 메르크 파텐트 게엠베하 전자 디바이스의 제조 방법
GB0709093D0 (en) * 2007-05-11 2007-06-20 Plastic Logic Ltd Electronic device incorporating parylene within a dielectric bilayer
GB2450382B (en) * 2007-06-22 2009-09-09 Cambridge Display Tech Ltd Organic thin film transistors, organic light-emissive devices and organic light-emissive displays
WO2009013291A2 (en) * 2007-07-25 2009-01-29 Basf Se Field effect elements
FR2919521B1 (fr) 2007-08-01 2012-03-09 Commissariat Energie Atomique Couche d'accroche sur des polymeres fluores
TWI345671B (en) * 2007-08-10 2011-07-21 Au Optronics Corp Thin film transistor, pixel structure and liquid crystal display panel
KR20090065254A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터
US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
JP2009224689A (ja) * 2008-03-18 2009-10-01 Sanyo Electric Co Ltd 有機トランジスタ及びその製造方法
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
GB2458940B (en) * 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
KR101581065B1 (ko) * 2008-04-24 2015-12-29 메르크 파텐트 게엠베하 전자 디바이스
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
FR2934714B1 (fr) * 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
EP2315793B1 (en) 2008-08-18 2013-08-21 Merck Patent GmbH Indacenodithiophene and indacenodiselenophene polymers and their use as organic semiconductors
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
GB2475667B (en) 2008-09-19 2012-08-08 Merck Patent Gmbh Polymers derived from bis (thienocyclopenta) benzothiadiazole and their use as organic semiconductors
KR101640620B1 (ko) 2008-09-19 2016-07-18 메르크 파텐트 게엠베하 벤조비스(실로로티오펜) 유래 중합체 및 그의 유기 반도체로서의 용도
JP2010093093A (ja) * 2008-10-09 2010-04-22 Hitachi Ltd 半導体装置およびその製造方法
JP5449736B2 (ja) * 2008-10-09 2014-03-19 株式会社日立製作所 ボトムゲート型有機薄膜トランジスタ及びその製造方法
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5583133B2 (ja) 2008-10-31 2014-09-03 ビーエーエスエフ ソシエタス・ヨーロピア 有機電界効果トランジスタに使用するためのジケトピロロピロールポリマー
JP2010163521A (ja) 2009-01-14 2010-07-29 Sumitomo Chemical Co Ltd 絶縁層用樹脂組成物
FR2945669B1 (fr) * 2009-05-14 2011-12-30 Commissariat Energie Atomique Transistor organique a effet de champ
US8853820B2 (en) 2009-05-25 2014-10-07 Basf Se Crosslinkable dielectrics and methods of preparation and use thereof
KR101805203B1 (ko) 2009-05-27 2018-01-10 바스프 에스이 폴리시클릭 디티오펜
BRPI1011853A2 (pt) 2009-05-27 2019-09-24 Basf Se polímero, material, camada ou componente semicondutores orgânicos, dispositivo semicondutor, processos para a preparação de um dispositivo semicondutor orgânico, e de um polímero, e, uso do polímero e/ou do material, camada ou componente semicondutores orgãnicos.
JP5458669B2 (ja) * 2009-05-28 2014-04-02 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
EP2277944A3 (en) * 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition for organic dielectric and organic thin film transistor formed using the same
GB2474827A (en) * 2009-08-04 2011-05-04 Cambridge Display Tech Ltd Surface modification
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
US8164089B2 (en) 2009-10-08 2012-04-24 Xerox Corporation Electronic device
EP2513952A1 (en) * 2009-12-17 2012-10-24 Merck Patent GmbH Deposition of nanoparticles
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
JP2011187626A (ja) * 2010-03-08 2011-09-22 Sony Corp 薄膜トランジスタおよび電子機器
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
KR101839636B1 (ko) 2010-05-19 2018-03-16 바스프 에스이 유기 반도체 소자에 사용하기 위한 디케토피롤로피롤 중합체
JP5659568B2 (ja) * 2010-06-11 2015-01-28 富士ゼロックス株式会社 電界効果型有機トランジスタ
JP2012023361A (ja) * 2010-06-17 2012-02-02 Sumitomo Chemical Co Ltd 光エネルギー架橋性有機薄膜トランジスタ絶縁層材料、オーバーコート絶縁層及び有機薄膜トランジスタ
EP2586074B1 (en) 2010-06-24 2016-12-28 Basf Se An organic field effect transistor with improved current on/off ratio and controllable threshold shift
JP2013543251A (ja) 2010-07-30 2013-11-28 ビーエーエスエフ ソシエタス・ヨーロピア プリンテッドエレクトロニクスにおける両親媒性タンパク質
WO2012017005A2 (en) 2010-08-05 2012-02-09 Basf Se Polymers based on benzodiones
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
WO2012029700A1 (ja) * 2010-08-30 2012-03-08 住友化学株式会社 有機薄膜トランジスタ絶縁層用組成物及び有機薄膜トランジスタ
DE112011102916T5 (de) 2010-09-02 2013-06-27 Merck Patent Gmbh Zwischenschicht für elektronische Vorrichtungen
EP2611841B1 (en) 2010-09-02 2015-10-28 Merck Patent GmbH Gate insulator layer for electronic devices
WO2012033073A1 (ja) * 2010-09-07 2012-03-15 日本化薬株式会社 有機半導体材料、有機半導体組成物、有機薄膜及び電界効果トランジスタ並びにその製造方法
CN103403903B (zh) * 2010-10-07 2017-02-15 乔治亚州技术研究公司 场效应晶体管及其制造方法
GB201105482D0 (en) 2011-03-31 2011-05-18 Imp Innovations Ltd Polymers
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB201108864D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
EP2740167B1 (en) 2011-08-03 2018-12-26 Universita' Degli Studi Di Cagliari Method of manufacturing low voltage organic transistor
FR2980040B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor organique a effet de champ
FR2980041B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor a effet de champ comprenant un limiteur de courant de fuite
CN103906786B (zh) 2011-10-04 2017-06-09 巴斯夫欧洲公司 基于苯并二酮的聚合物
CN104039879A (zh) 2011-11-15 2014-09-10 巴斯夫欧洲公司 有机半导体器件及其制造方法
WO2013083507A1 (en) 2011-12-07 2013-06-13 Basf Se An organic field effect transistor
WO2013083506A1 (en) 2011-12-07 2013-06-13 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
PL397479A1 (pl) 2011-12-21 2013-06-24 Instytut Chemii Organicznej Polskiej Akademii Nauk Nowe, fluorescencyjne barwniki heterocykliczne i sposób ich otrzymywania
EP2834284B1 (en) 2012-04-02 2017-05-10 Basf Se Phenanthro[9,10-b]furan polymers and small molecules for electronic applications
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
TWI500162B (zh) * 2012-04-03 2015-09-11 E Ink Holdings Inc 薄膜電晶體及其製造方法
EP2834286B1 (en) 2012-04-04 2019-01-23 Basf Se Diketopyrrolopyrrole polymers and small molecules
CN104245783B (zh) 2012-04-25 2017-12-12 默克专利股份有限公司 用于有机电子器件的堤岸结构
WO2014008971A1 (en) 2012-07-13 2014-01-16 Merck Patent Gmbh Organic electronic device comprising an organic semiconductor formulation
WO2014016219A1 (en) 2012-07-23 2014-01-30 Basf Se Dithienobenzofuran polymers and small molecules for electronic application
KR20210041125A (ko) 2012-08-09 2021-04-14 메르크 파텐트 게엠베하 유기 반도성 제제
TW201418350A (zh) * 2012-08-31 2014-05-16 Asahi Glass Co Ltd 硬化性組成物及硬化膜之製造方法
JP6036064B2 (ja) * 2012-09-13 2016-11-30 富士ゼロックス株式会社 有機半導体トランジスタ
US9425417B2 (en) 2012-09-21 2016-08-23 Merck Patent Gmbh Polycycloolefinic polymer formulation for an organic semiconductor
WO2014053202A1 (en) 2012-10-04 2014-04-10 Merck Patent Gmbh Passivation layers for organic electronic devices
KR20150082473A (ko) 2012-11-07 2015-07-15 바스프 에스이 나프토디온 기재 중합체
WO2014086722A1 (en) 2012-12-04 2014-06-12 Basf Se Functionnalized benzodithiophene polymers for electronic application
US9929364B2 (en) 2013-05-06 2018-03-27 Basf Se Soluble cyclic imides containing polymers as dielectrics in organic electronic applications
JP6191235B2 (ja) * 2013-05-20 2017-09-06 富士電機株式会社 有機トランジスタ及びその製造方法
US9698348B2 (en) 2013-06-24 2017-07-04 Basf Se Polymers based on fused diketopyrrolopyrroles
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
JPWO2015076334A1 (ja) * 2013-11-21 2017-03-16 株式会社ニコン トランジスタの製造方法およびトランジスタ
US9330809B2 (en) 2013-12-17 2016-05-03 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
US9336921B2 (en) 2013-12-17 2016-05-10 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
WO2015120025A1 (en) 2014-02-07 2015-08-13 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
KR102570660B1 (ko) 2015-10-21 2023-08-25 주식회사 클랩 디피롤로[1,2-b:1',2'-g][2,6]나프티리딘-5,11-디온 기재 중합체 및 화합물
CN105404046B (zh) * 2015-12-04 2018-06-01 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
DE102016104254A1 (de) * 2016-03-09 2017-10-26 Friedrich-Schiller-Universität Jena Verfahren zur Herstellung einer halbleitenden Folie und elektronisches Bauelement
KR102303315B1 (ko) 2016-05-25 2021-09-23 주식회사 클랩 반도체
TW201832012A (zh) * 2017-01-20 2018-09-01 日商富士軟片股份有限公司 保護層形成用組成物、積層體及套組
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
DE102019200810B4 (de) * 2019-01-23 2023-12-07 Technische Universität Dresden Organischer dünnschicht-transistor und verfahren zur herstellung desselben
GB2600317B (en) * 2019-06-24 2024-02-14 Flexenable Tech Limited Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
GB201919031D0 (en) 2019-12-20 2020-02-05 Smartkem Ltd Sputter protective layer for organic electronic devices
US12096641B2 (en) * 2020-06-03 2024-09-17 Purdue Research Foundation Polyimide-based transistor devices and methods of fabricating the same
CN113299831B (zh) * 2021-05-21 2023-03-24 西安电子科技大学 基于三层绝缘介质的低功耗柔性薄膜晶体管及其制作方法
CN113410385A (zh) * 2021-06-15 2021-09-17 南方科技大学 一种低压浮栅光电存储器及制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565860A (en) 1984-04-09 1986-01-21 Nissan Motor Co., Ltd. Polymer of triphenylamine
DE3751502T2 (de) * 1986-03-11 1996-02-15 Kanegafuchi Chemical Ind Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.
DE3610649A1 (de) 1986-03-29 1987-10-01 Basf Ag Polymere mit triphenylamineinheiten
JP2651691B2 (ja) * 1988-03-03 1997-09-10 バンドー化学株式会社 新規な芳香族アミン化合物
JP2533943B2 (ja) 1989-08-01 1996-09-11 キヤノン株式会社 電子写真感光体の製造法
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JPH07221367A (ja) 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd 配向積層膜とその製造方法及びそれを用いた有機電子素子とその製造方法
GB9403503D0 (en) 1994-02-24 1994-04-13 Inmos Ltd Memory cell
JP2725591B2 (ja) * 1994-03-10 1998-03-11 日本電気株式会社 電界効果型トランジスタ
US5681664A (en) 1994-08-04 1997-10-28 Toyo Ink Manufacturing Co., Ltd. Hole-transporting material and use thereof
US5677096A (en) 1995-09-19 1997-10-14 Ricoh Company, Ltd. Electrophotographic photoconductor
EP1146034A1 (en) 1995-09-25 2001-10-17 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organic electroluminescence device, and organic electroluminescence device for which the light-emitting material is adapted
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
WO1997033193A2 (en) 1996-02-23 1997-09-12 The Dow Chemical Company Cross-linkable or chain extendable polyarylpolyamines and films thereof
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
US5981970A (en) 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
JPH10335671A (ja) * 1997-06-02 1998-12-18 Sharp Corp ドライバーモノリシック駆動素子
US5879821A (en) 1997-11-13 1999-03-09 Xerox Corporation Electroluminescent polymer compositions and processes thereof
GB9726810D0 (en) 1997-12-19 1998-02-18 Zeneca Ltd Compounds composition & use
WO2000078843A1 (en) 1997-12-19 2000-12-28 Avecia Limited Process for the isolation of polymer fractions
CN1167146C (zh) * 1999-01-15 2004-09-15 陶氏环球技术公司 高分子半导体场效应晶体管
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP2000275678A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
CA2374236C (en) * 1999-06-21 2014-12-23 Cambridge University Technical Services Limited Aligned polymers for an organic tft
WO2001020691A1 (en) * 1999-09-10 2001-03-22 Koninklijke Philips Electronics N.V. Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss)
JP2001094107A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
CA2394881A1 (en) 1999-12-21 2001-06-28 Plastic Logic Limited Solution processed devices
GB0028867D0 (en) * 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
JP2005505142A (ja) 2001-10-01 2005-02-17 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス及び構成並びに方法
DE10151036A1 (de) * 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
CN1157807C (zh) 2001-11-09 2004-07-14 清华大学 一种有机薄膜场效应晶体管及其制备方法
US6912473B2 (en) * 2002-06-28 2005-06-28 International Business Machines Corporation Method for verifying cross-sections

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109088000A (zh) * 2018-08-22 2018-12-25 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
CN109088000B (zh) * 2018-08-22 2022-04-12 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法

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US7029945B2 (en) 2006-04-18
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ATE525757T1 (de) 2011-10-15
US20050104058A1 (en) 2005-05-19
WO2003052841A1 (en) 2003-06-26
KR100949304B1 (ko) 2010-03-23
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JP2011254075A (ja) 2011-12-15
NO20043049L (no) 2004-07-15

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