JP2010518538A5 - - Google Patents
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- Publication number
- JP2010518538A5 JP2010518538A5 JP2009548552A JP2009548552A JP2010518538A5 JP 2010518538 A5 JP2010518538 A5 JP 2010518538A5 JP 2009548552 A JP2009548552 A JP 2009548552A JP 2009548552 A JP2009548552 A JP 2009548552A JP 2010518538 A5 JP2010518538 A5 JP 2010518538A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- voltage
- source line
- precharging
- selection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000004044 response Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88863807P | 2007-02-07 | 2007-02-07 | |
| US60/888,638 | 2007-02-07 | ||
| PCT/CA2008/000232 WO2008095294A1 (en) | 2007-02-07 | 2008-02-06 | Source side asymmetrical precharge programming scheme |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011009708A Division JP5476572B2 (ja) | 2007-02-07 | 2011-01-20 | ソース側非対称プリチャージプログラム方式 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010518538A JP2010518538A (ja) | 2010-05-27 |
| JP2010518538A5 true JP2010518538A5 (enExample) | 2011-03-10 |
| JP5279729B2 JP5279729B2 (ja) | 2013-09-04 |
Family
ID=39676017
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009548552A Expired - Fee Related JP5279729B2 (ja) | 2007-02-07 | 2008-02-06 | ソース側非対称プリチャージプログラム方式 |
| JP2011009708A Expired - Fee Related JP5476572B2 (ja) | 2007-02-07 | 2011-01-20 | ソース側非対称プリチャージプログラム方式 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011009708A Expired - Fee Related JP5476572B2 (ja) | 2007-02-07 | 2011-01-20 | ソース側非対称プリチャージプログラム方式 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7952929B2 (enExample) |
| EP (2) | EP2490225A1 (enExample) |
| JP (2) | JP5279729B2 (enExample) |
| KR (1) | KR101444491B1 (enExample) |
| CN (2) | CN103137200A (enExample) |
| CA (1) | CA2672245A1 (enExample) |
| TW (1) | TWI483253B (enExample) |
| WO (1) | WO2008095294A1 (enExample) |
Families Citing this family (65)
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| KR101036720B1 (ko) * | 2009-02-02 | 2011-05-24 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
| US8638609B2 (en) | 2010-05-19 | 2014-01-28 | Spansion Llc | Partial local self boosting for NAND |
| US8472271B2 (en) | 2011-02-18 | 2013-06-25 | International Business Machines Corporation | Systems and methods for memory device precharging |
| US8614918B2 (en) | 2011-05-02 | 2013-12-24 | Micron Technology, Inc. | Memory apparatus and methods |
| JP2013058276A (ja) * | 2011-09-07 | 2013-03-28 | Toshiba Corp | 半導体記憶装置 |
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| KR20130044693A (ko) * | 2011-10-24 | 2013-05-03 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
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| KR102179845B1 (ko) | 2014-02-03 | 2020-11-17 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 프로그램 방법 |
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| KR102222594B1 (ko) | 2014-11-13 | 2021-03-08 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 소거 방법, 및 그것을 포함하는 메모리 시스템 |
| JP5992983B2 (ja) * | 2014-12-03 | 2016-09-14 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体記憶装置 |
| US10665282B2 (en) * | 2015-05-15 | 2020-05-26 | Tohoku University | Memory circuit provided with variable-resistance element |
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| US9779819B1 (en) * | 2016-06-24 | 2017-10-03 | Micron Technology, Inc. | Connecting memory cells to a data line sequentially while applying a program voltage to the memory cells |
| KR102469684B1 (ko) * | 2016-06-30 | 2022-11-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치의 프로그램 방법 |
| US9640273B1 (en) | 2016-08-25 | 2017-05-02 | Sandisk Technologies Llc | Mitigating hot electron program disturb |
| KR102656828B1 (ko) | 2017-01-05 | 2024-04-18 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 동작 방법 |
| KR102295521B1 (ko) | 2017-03-16 | 2021-08-30 | 삼성전자 주식회사 | 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법 |
| CN110248811B (zh) * | 2017-04-05 | 2021-01-22 | 惠普发展公司,有限责任合伙企业 | 利用预充电的阈值的管芯上致动器评估的系统和方法 |
| KR102289598B1 (ko) | 2017-06-26 | 2021-08-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템 그리고 그것의 프로그램 방법 |
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| KR102441580B1 (ko) * | 2018-02-28 | 2022-09-07 | 삼성전자주식회사 | 프로그램 성능이 개선된 메모리 장치 및 이의 동작방법 |
| US11217311B2 (en) | 2018-02-28 | 2022-01-04 | Samsung Electronics Co., Ltd. | Memory device with improved program performance and method of operating the same |
| KR102532998B1 (ko) | 2018-04-16 | 2023-05-16 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법 |
| US10643718B2 (en) | 2018-06-07 | 2020-05-05 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for program disturb including purge during precharge |
| US10541037B2 (en) | 2018-06-07 | 2020-01-21 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for program disturb including delayed ramp down during program verify |
| US10580504B2 (en) | 2018-06-07 | 2020-03-03 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for program disturb including spike during boosting |
| US10553298B1 (en) | 2018-07-27 | 2020-02-04 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for select gate disturb |
| US10559368B1 (en) | 2018-08-07 | 2020-02-11 | Sandisk Technologies Llc | Non-volatile memory with countermeasures for select gate disturb during program pre-charge |
| US10665300B1 (en) * | 2018-11-12 | 2020-05-26 | Micron Technology, Inc. | Apparatus and methods for discharging control gates after performing an access operation on a memory cell |
| US10726920B2 (en) | 2018-11-26 | 2020-07-28 | Sandisk Technologies Llc | Pre-charge voltage for inhibiting unselected NAND memory cell programming |
| CN110289034A (zh) * | 2019-06-28 | 2019-09-27 | 长江存储科技有限责任公司 | 非易失性存储器及其操作方法 |
| KR102757291B1 (ko) * | 2019-08-01 | 2025-01-20 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 동작 방법 |
| JP2021047939A (ja) * | 2019-09-17 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
| EP4273866B1 (en) * | 2019-10-22 | 2025-04-23 | Yangtze Memory Technologies Co., Ltd. | Non-volatile memory device and control method |
| EP3891746B1 (en) * | 2019-11-14 | 2023-07-12 | Yangtze Memory Technologies Co., Ltd. | Method of performing programming operation and related memory device |
| EP3915115B1 (en) | 2019-11-28 | 2023-07-19 | Yangtze Memory Technologies Co., Ltd. | Methods of enhancing speed of reading data from memory device |
| KR20210089385A (ko) * | 2020-01-08 | 2021-07-16 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
| JP7247376B2 (ja) | 2020-02-06 | 2023-03-28 | 長江存儲科技有限責任公司 | 3dメモリデバイスをプログラムする方法および関係する3dメモリデバイス |
| US10957394B1 (en) | 2020-02-10 | 2021-03-23 | Sandisk Technologies Llc | NAND string pre-charge during programming by injecting holes via substrate |
| US11081162B1 (en) | 2020-02-24 | 2021-08-03 | Sandisk Technologies Llc | Source side precharge and boosting improvement for reverse order program |
| JP6966587B2 (ja) | 2020-03-02 | 2021-11-17 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置および読出し方法 |
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| WO2022126368A1 (en) * | 2020-12-15 | 2022-06-23 | Yangtze Memory Technologies Co., Ltd. | Architecture and method for nand memory operation |
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| TWI736495B (zh) * | 2020-12-30 | 2021-08-11 | 旺宏電子股份有限公司 | 用於記憶裝置之編程方法 |
| JP7677611B2 (ja) | 2021-03-03 | 2025-05-15 | 国立大学法人東北大学 | 抵抗変化型素子を備えた記憶回路 |
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| US20240079069A1 (en) * | 2022-08-23 | 2024-03-07 | Samsung Electronics Co., Ltd. | Operation method of memory device |
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| TWI822270B (zh) * | 2022-08-24 | 2023-11-11 | 旺宏電子股份有限公司 | 記憶體裝置及其程式化方法 |
| US12488846B2 (en) * | 2023-04-24 | 2025-12-02 | SanDisk Technologies, Inc. | Negative word line enabled pre-boosting strategy to improve NAND program performance |
| TWI855786B (zh) * | 2023-07-21 | 2024-09-11 | 旺宏電子股份有限公司 | 記憶體裝置及其預充電方法 |
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| US6230233B1 (en) * | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
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| KR950015768A (ko) * | 1993-11-17 | 1995-06-17 | 김광호 | 불휘발성 반도체 메모리 장치의 배선단락 검출회로 및 그 방법 |
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-
2008
- 2008-02-06 CN CN2012105707999A patent/CN103137200A/zh active Pending
- 2008-02-06 CN CN200880004505.8A patent/CN101617370B/zh not_active Expired - Fee Related
- 2008-02-06 EP EP12168362A patent/EP2490225A1/en not_active Withdrawn
- 2008-02-06 EP EP08714555A patent/EP2122628B1/en not_active Not-in-force
- 2008-02-06 JP JP2009548552A patent/JP5279729B2/ja not_active Expired - Fee Related
- 2008-02-06 KR KR1020097018585A patent/KR101444491B1/ko active Active
- 2008-02-06 US US12/026,825 patent/US7952929B2/en not_active Expired - Fee Related
- 2008-02-06 CA CA002672245A patent/CA2672245A1/en not_active Abandoned
- 2008-02-06 WO PCT/CA2008/000232 patent/WO2008095294A1/en not_active Ceased
- 2008-02-12 TW TW097104918A patent/TWI483253B/zh not_active IP Right Cessation
-
2011
- 2011-01-20 JP JP2011009708A patent/JP5476572B2/ja not_active Expired - Fee Related
- 2011-04-21 US US13/091,479 patent/US8139414B2/en active Active
-
2012
- 2012-02-03 US US13/365,913 patent/US8537617B2/en active Active
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