CN103137200A - 源侧非对称预充电编程方案 - Google Patents

源侧非对称预充电编程方案 Download PDF

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Publication number
CN103137200A
CN103137200A CN2012105707999A CN201210570799A CN103137200A CN 103137200 A CN103137200 A CN 103137200A CN 2012105707999 A CN2012105707999 A CN 2012105707999A CN 201210570799 A CN201210570799 A CN 201210570799A CN 103137200 A CN103137200 A CN 103137200A
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China
Prior art keywords
memory cell
programming
voltage
string
transfer overvoltage
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Chinese (zh)
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金镇祺
潘弘柏
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Mosaid Technologies Inc
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Mosaid Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN2012105707999A 2007-02-07 2008-02-06 源侧非对称预充电编程方案 Pending CN103137200A (zh)

Applications Claiming Priority (2)

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US88863807P 2007-02-07 2007-02-07
US60/888,638 2007-02-07

Related Parent Applications (1)

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CN200880004505.8A Division CN101617370B (zh) 2007-02-07 2008-02-06 源侧非对称预充电编程方案

Publications (1)

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CN103137200A true CN103137200A (zh) 2013-06-05

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CN2012105707999A Pending CN103137200A (zh) 2007-02-07 2008-02-06 源侧非对称预充电编程方案
CN200880004505.8A Expired - Fee Related CN101617370B (zh) 2007-02-07 2008-02-06 源侧非对称预充电编程方案

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US (3) US7952929B2 (enExample)
EP (2) EP2122628B1 (enExample)
JP (2) JP5279729B2 (enExample)
KR (1) KR101444491B1 (enExample)
CN (2) CN103137200A (enExample)
CA (1) CA2672245A1 (enExample)
TW (1) TWI483253B (enExample)
WO (1) WO2008095294A1 (enExample)

Cited By (1)

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US11978515B2 (en) 2020-03-02 2024-05-07 Winbond Electronics Corp. Semiconductor memory device and reading method

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US8139414B2 (en) 2012-03-20
JP5279729B2 (ja) 2013-09-04
US20080186776A1 (en) 2008-08-07
US20120262986A1 (en) 2012-10-18
CN101617370A (zh) 2009-12-30
KR20090117794A (ko) 2009-11-12
JP2010518538A (ja) 2010-05-27
US20110194351A1 (en) 2011-08-11
CA2672245A1 (en) 2008-08-14
WO2008095294A1 (en) 2008-08-14
US8537617B2 (en) 2013-09-17
JP5476572B2 (ja) 2014-04-23
TW200901198A (en) 2009-01-01
TWI483253B (zh) 2015-05-01
EP2490225A1 (en) 2012-08-22
EP2122628A1 (en) 2009-11-25
EP2122628B1 (en) 2012-05-30
CN101617370B (zh) 2014-07-16
US7952929B2 (en) 2011-05-31
JP2011076715A (ja) 2011-04-14
KR101444491B1 (ko) 2014-09-24
EP2122628A4 (en) 2010-02-24

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