JP5279729B2 - ソース側非対称プリチャージプログラム方式 - Google Patents

ソース側非対称プリチャージプログラム方式 Download PDF

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Publication number
JP5279729B2
JP5279729B2 JP2009548552A JP2009548552A JP5279729B2 JP 5279729 B2 JP5279729 B2 JP 5279729B2 JP 2009548552 A JP2009548552 A JP 2009548552A JP 2009548552 A JP2009548552 A JP 2009548552A JP 5279729 B2 JP5279729 B2 JP 5279729B2
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Prior art keywords
memory cell
voltage
channel
selected memory
string
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JP2009548552A
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Japanese (ja)
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JP2010518538A5 (enExample
JP2010518538A (ja
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ジン−キ・キム
ホン・ボム・ピョン
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Mosaid Technologies Inc
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Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2009548552A 2007-02-07 2008-02-06 ソース側非対称プリチャージプログラム方式 Expired - Fee Related JP5279729B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88863807P 2007-02-07 2007-02-07
US60/888,638 2007-02-07
PCT/CA2008/000232 WO2008095294A1 (en) 2007-02-07 2008-02-06 Source side asymmetrical precharge programming scheme

Related Child Applications (1)

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JP2011009708A Division JP5476572B2 (ja) 2007-02-07 2011-01-20 ソース側非対称プリチャージプログラム方式

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JP2010518538A JP2010518538A (ja) 2010-05-27
JP2010518538A5 JP2010518538A5 (enExample) 2011-03-10
JP5279729B2 true JP5279729B2 (ja) 2013-09-04

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JP2009548552A Expired - Fee Related JP5279729B2 (ja) 2007-02-07 2008-02-06 ソース側非対称プリチャージプログラム方式
JP2011009708A Expired - Fee Related JP5476572B2 (ja) 2007-02-07 2011-01-20 ソース側非対称プリチャージプログラム方式

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US (3) US7952929B2 (enExample)
EP (2) EP2122628B1 (enExample)
JP (2) JP5279729B2 (enExample)
KR (1) KR101444491B1 (enExample)
CN (2) CN101617370B (enExample)
CA (1) CA2672245A1 (enExample)
TW (1) TWI483253B (enExample)
WO (1) WO2008095294A1 (enExample)

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Publication number Publication date
EP2122628A1 (en) 2009-11-25
EP2122628B1 (en) 2012-05-30
CN101617370A (zh) 2009-12-30
JP2011076715A (ja) 2011-04-14
TW200901198A (en) 2009-01-01
CA2672245A1 (en) 2008-08-14
JP5476572B2 (ja) 2014-04-23
JP2010518538A (ja) 2010-05-27
US8537617B2 (en) 2013-09-17
CN103137200A (zh) 2013-06-05
KR101444491B1 (ko) 2014-09-24
CN101617370B (zh) 2014-07-16
US8139414B2 (en) 2012-03-20
WO2008095294A1 (en) 2008-08-14
US20110194351A1 (en) 2011-08-11
US20120262986A1 (en) 2012-10-18
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