KR101444491B1 - 소스 측 비대칭 사전 충전 프로그래밍 방식 - Google Patents

소스 측 비대칭 사전 충전 프로그래밍 방식 Download PDF

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KR101444491B1
KR101444491B1 KR1020097018585A KR20097018585A KR101444491B1 KR 101444491 B1 KR101444491 B1 KR 101444491B1 KR 1020097018585 A KR1020097018585 A KR 1020097018585A KR 20097018585 A KR20097018585 A KR 20097018585A KR 101444491 B1 KR101444491 B1 KR 101444491B1
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memory cell
voltage
string
selected memory
programming
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KR20090117794A (ko
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진기 김
홍 범 편
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컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020097018585A 2007-02-07 2008-02-06 소스 측 비대칭 사전 충전 프로그래밍 방식 Active KR101444491B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88863807P 2007-02-07 2007-02-07
US60/888,638 2007-02-07
PCT/CA2008/000232 WO2008095294A1 (en) 2007-02-07 2008-02-06 Source side asymmetrical precharge programming scheme

Publications (2)

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KR20090117794A KR20090117794A (ko) 2009-11-12
KR101444491B1 true KR101444491B1 (ko) 2014-09-24

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US (3) US7952929B2 (enExample)
EP (2) EP2122628B1 (enExample)
JP (2) JP5279729B2 (enExample)
KR (1) KR101444491B1 (enExample)
CN (2) CN103137200A (enExample)
CA (1) CA2672245A1 (enExample)
TW (1) TWI483253B (enExample)
WO (1) WO2008095294A1 (enExample)

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KR20210107513A (ko) * 2020-02-24 2021-09-01 샌디스크 테크놀로지스 엘엘씨 역방향 프로그램용 소스측 사전충전 및 부스팅 개선
US11600331B2 (en) 2018-02-28 2023-03-07 Samsung Electronics Co., Ltd. Memory device with improved program performance and method of operating the same

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KR101036720B1 (ko) * 2009-02-02 2011-05-24 주식회사 하이닉스반도체 불휘발성 메모리 소자의 동작 방법
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KR102295521B1 (ko) 2017-03-16 2021-08-30 삼성전자 주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
US10850509B2 (en) * 2017-04-05 2020-12-01 Hewlett-Packard Development Company, L.P. On-die actuator evaluation with pre-charged thresholds
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KR102336659B1 (ko) * 2017-09-05 2021-12-07 삼성전자 주식회사 데이터 신뢰성을 향상시키기 위한 메모리 동작을 수행하는 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 장치의 동작 방법
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KR20190103820A (ko) * 2018-02-28 2019-09-05 삼성전자주식회사 프로그램 성능이 개선된 메모리 장치 및 이의 동작방법
KR102441580B1 (ko) * 2018-02-28 2022-09-07 삼성전자주식회사 프로그램 성능이 개선된 메모리 장치 및 이의 동작방법
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KR102380986B1 (ko) 2020-02-24 2022-04-01 샌디스크 테크놀로지스 엘엘씨 역방향 프로그램용 소스측 사전충전 및 부스팅 개선

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US20120262986A1 (en) 2012-10-18
CN103137200A (zh) 2013-06-05
CN101617370A (zh) 2009-12-30
KR20090117794A (ko) 2009-11-12
JP2010518538A (ja) 2010-05-27
US20110194351A1 (en) 2011-08-11
CA2672245A1 (en) 2008-08-14
WO2008095294A1 (en) 2008-08-14
US8537617B2 (en) 2013-09-17
JP5476572B2 (ja) 2014-04-23
TW200901198A (en) 2009-01-01
TWI483253B (zh) 2015-05-01
EP2490225A1 (en) 2012-08-22
EP2122628A1 (en) 2009-11-25
EP2122628B1 (en) 2012-05-30
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EP2122628A4 (en) 2010-02-24

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