TWI483253B - 源極側非對稱預充電程式化設計 - Google Patents

源極側非對稱預充電程式化設計 Download PDF

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Publication number
TWI483253B
TWI483253B TW097104918A TW97104918A TWI483253B TW I483253 B TWI483253 B TW I483253B TW 097104918 A TW097104918 A TW 097104918A TW 97104918 A TW97104918 A TW 97104918A TW I483253 B TWI483253 B TW I483253B
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Taiwan
Prior art keywords
memory cell
voltage
stylized
selected memory
channel
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TW097104918A
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English (en)
Chinese (zh)
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TW200901198A (en
Inventor
Hong Beom Pyeon
Jin-Ki Kim
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Conversant Intellectual Property Man Inc
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Publication of TW200901198A publication Critical patent/TW200901198A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW097104918A 2007-02-07 2008-02-12 源極側非對稱預充電程式化設計 TWI483253B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88863807P 2007-02-07 2007-02-07

Publications (2)

Publication Number Publication Date
TW200901198A TW200901198A (en) 2009-01-01
TWI483253B true TWI483253B (zh) 2015-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104918A TWI483253B (zh) 2007-02-07 2008-02-12 源極側非對稱預充電程式化設計

Country Status (8)

Country Link
US (3) US7952929B2 (enExample)
EP (2) EP2122628B1 (enExample)
JP (2) JP5279729B2 (enExample)
KR (1) KR101444491B1 (enExample)
CN (2) CN101617370B (enExample)
CA (1) CA2672245A1 (enExample)
TW (1) TWI483253B (enExample)
WO (1) WO2008095294A1 (enExample)

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TWI822270B (zh) * 2022-08-24 2023-11-11 旺宏電子股份有限公司 記憶體裝置及其程式化方法
US12237024B2 (en) 2022-08-24 2025-02-25 Macronix International Co., Ltd. Memory device and programming method thereof

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EP2122628A1 (en) 2009-11-25
EP2122628B1 (en) 2012-05-30
CN101617370A (zh) 2009-12-30
JP2011076715A (ja) 2011-04-14
TW200901198A (en) 2009-01-01
JP5279729B2 (ja) 2013-09-04
CA2672245A1 (en) 2008-08-14
JP5476572B2 (ja) 2014-04-23
JP2010518538A (ja) 2010-05-27
US8537617B2 (en) 2013-09-17
CN103137200A (zh) 2013-06-05
KR101444491B1 (ko) 2014-09-24
CN101617370B (zh) 2014-07-16
US8139414B2 (en) 2012-03-20
WO2008095294A1 (en) 2008-08-14
US20110194351A1 (en) 2011-08-11
US20120262986A1 (en) 2012-10-18
EP2490225A1 (en) 2012-08-22
EP2122628A4 (en) 2010-02-24
KR20090117794A (ko) 2009-11-12
US7952929B2 (en) 2011-05-31
US20080186776A1 (en) 2008-08-07

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