JP2006523025A - 太陽電池用金属コンタクト構造体及び製法 - Google Patents
太陽電池用金属コンタクト構造体及び製法 Download PDFInfo
- Publication number
- JP2006523025A JP2006523025A JP2006509159A JP2006509159A JP2006523025A JP 2006523025 A JP2006523025 A JP 2006523025A JP 2006509159 A JP2006509159 A JP 2006509159A JP 2006509159 A JP2006509159 A JP 2006509159A JP 2006523025 A JP2006523025 A JP 2006523025A
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- JP
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- Prior art keywords
- metal
- layer
- plating
- barrier
- strike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 94
- 239000002184 metal Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000007747 plating Methods 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000010936 titanium Substances 0.000 claims abstract 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 4
- 239000010937 tungsten Substances 0.000 claims abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000000977 initiatory effect Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000010953 base metal Substances 0.000 claims 10
- 239000003870 refractory metal Substances 0.000 claims 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/412,711 US7388147B2 (en) | 2003-04-10 | 2003-04-10 | Metal contact structure for solar cell and method of manufacture |
| PCT/US2004/006729 WO2004095587A2 (en) | 2003-04-10 | 2004-03-03 | Metal contact structure for solar cell and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006523025A true JP2006523025A (ja) | 2006-10-05 |
| JP2006523025A5 JP2006523025A5 (enExample) | 2007-04-05 |
Family
ID=33131270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006509159A Pending JP2006523025A (ja) | 2003-04-10 | 2004-03-03 | 太陽電池用金属コンタクト構造体及び製法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7388147B2 (enExample) |
| JP (1) | JP2006523025A (enExample) |
| DE (1) | DE112004000600B4 (enExample) |
| WO (1) | WO2004095587A2 (enExample) |
Cited By (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008517451A (ja) * | 2004-10-14 | 2008-05-22 | インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー | 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池 |
| EP1995792A2 (en) | 2007-05-22 | 2008-11-26 | Sanyo Electric Co., Ltd. | Solar cell and manufacturing method of the solar cell |
| JP2009524920A (ja) * | 2006-01-25 | 2009-07-02 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 太陽電池セルの金属電極パターン作製方法 |
| WO2009125628A1 (ja) | 2008-04-08 | 2009-10-15 | シャープ株式会社 | 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール |
| WO2009144996A1 (ja) | 2008-05-30 | 2009-12-03 | シャープ株式会社 | 太陽電池、太陽電池の製造方法および太陽電池モジュール |
| JP2010108994A (ja) * | 2008-10-28 | 2010-05-13 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
| JP2010147324A (ja) * | 2008-12-19 | 2010-07-01 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
| JP2010532927A (ja) * | 2007-07-10 | 2010-10-14 | ドイチェ セル ゲーエムベーハー | 半導体素子のためのコンタクト構造とその製造方法 |
| JP2010535415A (ja) * | 2007-07-31 | 2010-11-18 | リニューアブル・エナジー・コーポレーション・エーエスエー | 太陽電池の裏面上にコンタクトを設ける方法、及び該方法によって設けられた接点を有する太陽電池 |
| KR20110032655A (ko) * | 2009-09-23 | 2011-03-30 | 엘지전자 주식회사 | 후면전극형 태양전지의 제조방법 |
| JP2011512661A (ja) * | 2008-02-15 | 2011-04-21 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 単結晶n型シリコン太陽電池の製造方法並びに当該方法に従って製造された太陽電池 |
| KR20110047438A (ko) * | 2009-10-30 | 2011-05-09 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| KR20110080230A (ko) * | 2010-01-05 | 2011-07-13 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| JP2011155229A (ja) * | 2010-01-28 | 2011-08-11 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
| JP2012004565A (ja) * | 2010-06-14 | 2012-01-05 | Imec | インターディジテイテッドバックコンタクト太陽電池の製造方法 |
| WO2012081813A1 (ko) * | 2010-12-17 | 2012-06-21 | 현대중공업 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
| WO2013001861A1 (ja) * | 2011-06-29 | 2013-01-03 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
| JP2013512582A (ja) * | 2009-12-01 | 2013-04-11 | サンパワー コーポレイション | レーザアブレーションを利用する、太陽電池のコンタクトの形成 |
| JPWO2011105554A1 (ja) * | 2010-02-26 | 2013-06-20 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
| WO2013125036A1 (ja) * | 2012-02-24 | 2013-08-29 | 三菱電機株式会社 | 光起電力素子およびその製造方法、光起電力モジュール |
| JPWO2012104997A1 (ja) * | 2011-02-01 | 2014-07-03 | 三菱電機株式会社 | 太陽電池セルとその製造方法、および太陽電池モジュール |
| JP2014527296A (ja) * | 2011-08-04 | 2014-10-09 | アイメック | 相互嵌合型電極形成 |
| JP2015062242A (ja) * | 2010-06-07 | 2015-04-02 | サンパワー コーポレイション | 太陽電池の製造方法 |
| WO2015098873A1 (ja) | 2013-12-24 | 2015-07-02 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
| KR20150095676A (ko) * | 2012-12-10 | 2015-08-21 | 선파워 코포레이션 | 태양 전지 전극 형성의 무전해 전도율 향상을 위한 방법 |
| JP2015191962A (ja) * | 2014-03-27 | 2015-11-02 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
| JP2015532535A (ja) * | 2012-10-04 | 2015-11-09 | シレボ, インコーポレイテッド | 電気めっき金属グリッドを用いた光起電力装置 |
| KR20150132323A (ko) * | 2013-03-15 | 2015-11-25 | 선파워 코포레이션 | 태양 전지 수명 및 효율을 향상시키기 위한 방법 |
| KR101578356B1 (ko) * | 2009-02-25 | 2015-12-17 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
| US9640673B2 (en) | 2013-06-05 | 2017-05-02 | Lg Electronics Inc. | Solar cell and manufacturing method thereof |
| US10084099B2 (en) | 2009-11-12 | 2018-09-25 | Tesla, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US10084107B2 (en) | 2010-06-09 | 2018-09-25 | Tesla, Inc. | Transparent conducting oxide for photovoltaic devices |
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| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| US10115839B2 (en) | 2013-01-11 | 2018-10-30 | Tesla, Inc. | Module fabrication of solar cells with low resistivity electrodes |
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| US10181536B2 (en) | 2015-10-22 | 2019-01-15 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| JP2019110309A (ja) * | 2013-12-20 | 2019-07-04 | サンパワー コーポレイション | 差異化されたp型及びn型領域構造を有する太陽電池エミッタ領域の製造 |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| JP2022016977A (ja) * | 2020-07-13 | 2022-01-25 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
| JP7389934B1 (ja) | 2023-03-16 | 2023-11-30 | 浙江愛旭太陽能科技有限公司 | 裏面接触太陽電池セル、裏面接触太陽電池アセンブリ及び太陽光発電システム |
| JP2024536519A (ja) * | 2022-03-11 | 2024-10-04 | ソーラーラボ アイコ ヨーロッパ ゲーエムベーハー | 太陽電池の導電性接触構造、太陽電池モジュール及び発電システム |
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| AU2002352156B2 (en) * | 2001-11-26 | 2007-08-09 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
| US7339110B1 (en) | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| US7455787B2 (en) * | 2003-08-01 | 2008-11-25 | Sunpower Corporation | Etching of solar cell materials |
| US7172184B2 (en) * | 2003-08-06 | 2007-02-06 | Sunpower Corporation | Substrate carrier for electroplating solar cells |
| US6998288B1 (en) * | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| US7250358B2 (en) * | 2004-08-06 | 2007-07-31 | Globitech Incorporated | Wafer for preventing the formation of silicon nodules and method for preventing the formation of silicon nodules |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| ES2253106B1 (es) * | 2004-11-02 | 2007-07-16 | Universidad Del Pais Vasco Euskal Herriko Unibertsitatea | Estructura de celula solar con contactos posteriores y coleccion de corriente por efecto transistor y procedimiento para su fabricacion. |
| US20130164883A1 (en) * | 2007-10-06 | 2013-06-27 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
| US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
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| DE102005040871A1 (de) * | 2005-04-16 | 2006-10-19 | Institut Für Solarenergieforschung Gmbh | Rückkontaktierte Solarzelle und Verfahren zu deren Herstellung |
| US7906722B2 (en) | 2005-04-19 | 2011-03-15 | Palo Alto Research Center Incorporated | Concentrating solar collector with solid optical element |
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| DE102005025125B4 (de) * | 2005-05-29 | 2008-05-08 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle |
| WO2007022955A1 (de) * | 2005-08-22 | 2007-03-01 | Conergy Ag | Solarzelle |
| US20100059107A1 (en) * | 2005-09-16 | 2010-03-11 | Blue Square Energy Incorporated | Photovoltaic solar cell and method of making the same |
| US7765949B2 (en) | 2005-11-17 | 2010-08-03 | Palo Alto Research Center Incorporated | Extrusion/dispensing systems and methods |
| US7799371B2 (en) | 2005-11-17 | 2010-09-21 | Palo Alto Research Center Incorporated | Extruding/dispensing multiple materials to form high-aspect ratio extruded structures |
| US20070107773A1 (en) * | 2005-11-17 | 2007-05-17 | Palo Alto Research Center Incorporated | Bifacial cell with extruded gridline metallization |
| US20070169806A1 (en) * | 2006-01-20 | 2007-07-26 | Palo Alto Research Center Incorporated | Solar cell production using non-contact patterning and direct-write metallization |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
| JP5142980B2 (ja) * | 2006-03-01 | 2013-02-13 | 三洋電機株式会社 | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
| DE102006013336A1 (de) * | 2006-03-21 | 2007-09-27 | Gp Solar Gmbh | Kontaktierungsverfahren für Halbleitermaterial sowie Halbleiterbauelement |
| KR101212198B1 (ko) * | 2006-04-06 | 2012-12-13 | 삼성에스디아이 주식회사 | 태양 전지 |
| US7855335B2 (en) | 2006-04-26 | 2010-12-21 | Palo Alto Research Center Incorporated | Beam integration for concentrating solar collector |
| US7851693B2 (en) | 2006-05-05 | 2010-12-14 | Palo Alto Research Center Incorporated | Passively cooled solar concentrating photovoltaic device |
| US7638708B2 (en) | 2006-05-05 | 2009-12-29 | Palo Alto Research Center Incorporated | Laminated solar concentrating photovoltaic device |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20040200520A1 (en) | 2004-10-14 |
| WO2004095587A3 (en) | 2004-12-16 |
| WO2004095587A2 (en) | 2004-11-04 |
| DE112004000600T5 (de) | 2006-02-16 |
| DE112004000600B4 (de) | 2015-03-19 |
| US20080210301A1 (en) | 2008-09-04 |
| US7388147B2 (en) | 2008-06-17 |
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