JP2015062242A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000010355 oscillation Effects 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000002679 ablation Methods 0.000 abstract description 24
- 230000005855 radiation Effects 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 abstract 3
- 239000010408 film Substances 0.000 description 86
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
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- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Abstract
Description
本開示は、米国エネルギー省により与えられた契約番号第DEFC36−07GO17043号に基づき、政府による支援を得て行われたものである。
[項目1]
レーザ光源の発振波長を吸収する材料を含む第1の膜が第2の膜の上又は上方に形成された積層体を準備する工程と、
予め定められたパルス周波数のパルスを発生する前記レーザ光源による1回のパルス周期でのパルス照射で、前記第1の膜及び第2の膜を貫通する孔を形成し、前記第2の膜の下の異なる材料層を露出させる工程と、
を備える太陽電池の製造方法。
[項目2]
前記第1の膜がシリコンを含む、項目1に記載の太陽電池の製造方法。
[項目3]
前記第1の膜が非晶質シリコンを含む、項目1に記載の太陽電池の製造方法。
[項目4]
前記1回のパルス周期でのパルス照射で、前記第1の膜、前記第2の膜、及び第3の膜を貫通する前記孔を形成する工程を更に含む、項目1に記載の太陽電池の製造方法。
[項目5]
前記第1の膜がシリコンを含み、前記第2の膜が二酸化シリコンを含み、前記第3の膜がシリコン窒化物を含み、前記第3の膜が前記第1の膜の上又は上方に形成される、項目4に記載の太陽電池の製造方法。
[項目6]
前記孔により露出される前記材料層は、拡散領域を含む、項目1に記載の太陽電池の製造方法。
[項目7]
前記1回のパルス周期でのパルス照射は、第1のレーザパルスの照射及び第2のレーザパルスの照射を含み、前記第2のレーザパルスの照射は、前記第1のレーザパルスの照射の後で、かつ、予め定められた遅延時間を経過した後になされる、項目1に記載の太陽電池の製造方法。
[項目8]
前記1回のパルス周期でのパルス照射は、第1のピーク及び第2のピークを有する時間的に非対称なレーザパルス照射を含み、前記第1のピークのエネルギーは、前記第2のピークのエネルギーより高い、項目1に記載の太陽電池の製造方法。
[項目9]
予め定められたパルス周波数のパルスを発生するレーザ光源による1回のパルス周期でのパルス照射で、時間的に非対称であり、かつ、第1のピーク及び第2のピークを有するレーザパルスを照射する工程と、
前記レーザパルスの前記第1のピークにより積層体の第1の膜及び導電性を有する第2の膜をアブレーションし、前記第1の膜及び前記第2の膜を貫通する孔を形成する工程と、
前記レーザパルスの前記第2のピークにより前記積層体の第3の膜をアブレーションし、前記積層体の前記第1の膜、前記第2の膜、及び前記第3の膜を貫通する前記孔を形成し、前記孔を介して太陽電池の拡散領域を露出させる工程と、
前記孔の内部を通じて前記拡散領域と接触する金属コンタクトを形成する工程と、
を備え、
前記1回のパルス周期でのパルス照射では、前記第1のピークが生じた後に、遅れて前記第2のピークが生じ、前記第1のピークのエネルギーは前記第2のピークのエネルギーよりも高い、
太陽電池の製造方法。
[項目10]
前記孔を通して前記拡散領域に対する金属接点を形成する工程を更に含む、項目9に記載の太陽電池の製造方法。
[項目11]
前記第2の膜が非晶質シリコンを含み、前記第3の膜が二酸化シリコンを含む、項目9に記載の太陽電池の製造方法。
[項目12]
前記第2の膜が非晶質シリコンを含む、項目9に記載の太陽電池の製造方法。
[項目13]
前記拡散領域が、多結晶シリコンの層内に形成される、項目9に記載の太陽電池の製造方法。
[項目14]
前記第1の膜がシリコン窒化物の層を含み、前記第2の膜が非晶質シリコンを含む、項目9に記載の太陽電池の製造方法。
[項目15]
太陽電池を製造する方法であって、前記方法が、
ある繰り返し率でレーザパルスを照射するレーザ源の単一の繰り返し内に、第1のレーザパルス及び第2のレーザパルスを照射する工程と、
前記第1のレーザパルスで積層膜の第1の膜及び第2の膜をアブレーションし、前記第1の膜及び前記第2の膜を通して孔を形成する工程であって、前記第2の膜が導電性である、工程と、
前記第2のレーザパルスで前記積層膜の第3の膜をアブレーションし、前記積層膜の前記第1の膜、前記第2の膜、及び前記第3の膜を通して前記孔を形成し、前記孔を通して前記太陽電池の拡散領域を露出する工程と、を含む、太陽電池の方法。
[項目16]
前記孔を通して前記拡散領域に対する金属接点を形成する工程を更に含む、項目15に記載の太陽電池を製造する方法。
[項目17]
前記第2のレーザパルスが、前記レーザ源によって、前記第1のレーザパルスの照射から1ns〜1μs後に照射される、項目15に記載の太陽電池を製造する方法。
[項目18]
前記第2の膜が非晶質シリコンを含み、前記第3の膜が二酸化シリコンを含む、項目15に記載の太陽電池を製造する方法。
[項目19]
前記第2のレーザパルスが、前記第1のレーザパルスと比較して等しいか又はより少ないエネルギーを有する、項目15に記載の太陽電池を製造する方法。
[項目20]
前記拡散領域が、シリコンの層内に形成される、項目15に記載の太陽電池を製造する方法。
[項目21]
前記第1の膜がシリコン窒化物の層を含み、前記第2の膜が非晶質シリコンを含む、項目15に記載の太陽電池を製造する方法。
Claims (8)
- レーザ光源の発振波長を吸収する材料を含む第1の膜が第2の膜の上方に形成された積層体を準備する工程と、
パルス周波数のパルスを発生する前記レーザ光源の1回のパルス周期で、前記第1の膜及び第2の膜を貫通する孔を形成する工程と、
前記1回のパルス周期で、前記第1の膜、前記第2の膜、及び第3の膜を貫通する前記孔を形成する工程と、
を備え
前記第1の膜がシリコンを含み、前記第2の膜が二酸化シリコンを含み、前記第3の膜がシリコン窒化物を含み、前記第3の膜が前記第1の膜の上方に形成され、前記孔が太陽電池の拡散領域を露出させる、太陽電池の製造方法。 - 第1のレーザパルス及び第2のレーザパルスが前記1回のパルス周期内に照射され、前記第2のレーザパルスは、前記第1のレーザパルスの照射の後の遅延時間を経過した後に照射される、請求項1に記載の太陽電池の製造方法。
- 第1のピーク及び第2のピークを有する時間的に非対称なレーザパルスが前記1回のパルス周期内に照射され、前記第1のピークのエネルギーは、前記第2のピークのエネルギーより高い、請求項1または請求項2に記載の太陽電池の製造方法。
- 周期的にレーザパルスを照射するレーザ光源による1回の周期内で、時間的に非対称であり、かつ、第1のピーク及び第2のピークを有するレーザパルスを照射する工程と、
前記レーザパルスの前記第1のピークにより積層体の第1の膜及び導電性を有する第2の膜をアブレーションし、前記第1の膜及び前記第2の膜を貫通する孔を形成する工程と、
前記レーザパルスの前記第2のピークにより前記積層体の第3の膜をアブレーションし、前記積層体の前記第1の膜、前記第2の膜、及び前記第3の膜を貫通する前記孔を形成し、前記孔を介して太陽電池の拡散領域を露出させる工程と、
を備える、太陽電池の製造方法。 - 前記孔の内部を通じて前記拡散領域と接触する金属コンタクトを形成する工程をさらに備える、請求項4に記載の太陽電池の製造方法。
- 前記1回の周期内で、前記第1のピークは、第2のピークより先に生じ、前記第1のピークのエネルギーは前記第2のピークのエネルギーよりも高い、請求項4または請求項5に記載の太陽電池の製造方法。
- 前記第2の膜が非晶質シリコンを含み、前記第3の膜が二酸化シリコンを含む、請求項4から請求項6のいずれか1つに記載の太陽電池の製造方法。
- 前記拡散領域が、多結晶シリコンの層内に形成される、請求項4から請求項7のいずれか1つに記載の太陽電池の製造方法。
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US12/795,526 US8211731B2 (en) | 2010-06-07 | 2010-06-07 | Ablation of film stacks in solar cell fabrication processes |
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Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
JP5473414B2 (ja) * | 2009-06-10 | 2014-04-16 | 株式会社ディスコ | レーザ加工装置 |
US20120318776A1 (en) * | 2009-09-24 | 2012-12-20 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
US8211731B2 (en) | 2010-06-07 | 2012-07-03 | Sunpower Corporation | Ablation of film stacks in solar cell fabrication processes |
US8263899B2 (en) | 2010-07-01 | 2012-09-11 | Sunpower Corporation | High throughput solar cell ablation system |
US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
WO2013101846A1 (en) * | 2011-12-26 | 2013-07-04 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
US8513045B1 (en) * | 2012-01-31 | 2013-08-20 | Sunpower Corporation | Laser system with multiple laser pulses for fabrication of solar cells |
KR102212290B1 (ko) * | 2013-03-15 | 2021-02-03 | 선파워 코포레이션 | 태양 전지의 감소된 접촉 저항 및 향상된 수명 |
US20170236972A1 (en) * | 2016-02-12 | 2017-08-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
CN106271089B (zh) * | 2016-09-30 | 2019-01-25 | 英诺激光科技股份有限公司 | 一种激光薄膜刻蚀装置及方法 |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
GB2572608A (en) * | 2018-04-03 | 2019-10-09 | Ilika Tech Ltd | Laser processing method for thin film structures |
GB2575786B (en) * | 2018-07-20 | 2021-11-03 | Dyson Technology Ltd | Stack for an energy storage device |
US10615044B1 (en) * | 2018-10-18 | 2020-04-07 | Asm Technology Singapore Pte Ltd | Material cutting using laser pulses |
KR102214451B1 (ko) * | 2019-03-15 | 2021-02-09 | 한국과학기술연구원 | 펄스레이저를 이용한 태양 전지 셀의 국부 후면 전계 영역 형성 방법과 이에 따라 형성된 후면 전계 영역을 포함하는 태양 전지 셀 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006523025A (ja) * | 2003-04-10 | 2006-10-05 | サンパワー コーポレイション | 太陽電池用金属コンタクト構造体及び製法 |
JP2007503124A (ja) * | 2003-08-19 | 2007-02-15 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | テイラード・レーザーパルス組の発生方法 |
JP2007530292A (ja) * | 2004-03-31 | 2007-11-01 | アイシン精機株式会社 | 制御された熱的、物理的改質を用いるパルスレーザ処理。 |
JP2008533730A (ja) * | 2005-03-16 | 2008-08-21 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | 厚いシリコン酸化物とシリコン窒化物の保護層を有する光起電電池とその作製 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4322571A (en) | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
US5432015A (en) | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
US5738731A (en) | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
US5841099A (en) | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
KR0165423B1 (ko) | 1995-07-24 | 1998-12-15 | 김광호 | 반도체 장치의 접속구조 및 그 제조방법 |
JP2000301369A (ja) * | 1999-04-16 | 2000-10-31 | Hitachi Ltd | レーザテクスチャ加工方法および加工装置ならびに磁気ディスク用基板 |
US7838794B2 (en) | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
AU2001251172A1 (en) * | 2000-03-30 | 2001-10-15 | Electro Scientific Industries, Inc. | Laser system and method for single pass micromachining of multilayer workpieces |
DE10125397B4 (de) * | 2001-05-23 | 2005-03-03 | Siemens Ag | Verfahren zum Bohren von Mikrolöchern mit einem Laserstrahl |
ATE311736T1 (de) | 2001-09-01 | 2005-12-15 | Trumpf Lasertechnik Gmbh | Verfahren zum herstellen von löchern in einer mehrlagenleiterplatte |
JP4164267B2 (ja) * | 2002-02-28 | 2008-10-15 | キヤノン株式会社 | 多結晶シリコン基板及び太陽電池の製造方法 |
US20060060238A1 (en) | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US7173212B1 (en) * | 2004-02-13 | 2007-02-06 | Semak Vladimir V | Method and apparatus for laser cutting and drilling of semiconductor materials and glass |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US8129822B2 (en) | 2006-10-09 | 2012-03-06 | Solexel, Inc. | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
US8420435B2 (en) | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US20060128073A1 (en) * | 2004-12-09 | 2006-06-15 | Yunlong Sun | Multiple-wavelength laser micromachining of semiconductor devices |
US7554031B2 (en) | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
US20070169806A1 (en) | 2006-01-20 | 2007-07-26 | Palo Alto Research Center Incorporated | Solar cell production using non-contact patterning and direct-write metallization |
US20080029152A1 (en) * | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
US8084684B2 (en) | 2006-10-09 | 2011-12-27 | Solexel, Inc. | Three-dimensional thin-film solar cells |
US7838062B2 (en) | 2007-05-29 | 2010-11-23 | Sunpower Corporation | Array of small contacts for solar cell fabrication |
US8198528B2 (en) | 2007-12-14 | 2012-06-12 | Sunpower Corporation | Anti-reflective coating with high optical absorption layer for backside contact solar cells |
US20090188553A1 (en) | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
US7833808B2 (en) | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
US8476552B2 (en) * | 2008-03-31 | 2013-07-02 | Electro Scientific Industries, Inc. | Laser systems and methods using triangular-shaped tailored laser pulses for selected target classes |
JP4964186B2 (ja) * | 2008-04-28 | 2012-06-27 | 三菱電機株式会社 | 光起電力装置の製造方法 |
US7851698B2 (en) | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
JP2012501249A (ja) * | 2008-08-26 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | レーザー材料除去方法および装置 |
US7855089B2 (en) * | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
US8211731B2 (en) | 2010-06-07 | 2012-07-03 | Sunpower Corporation | Ablation of film stacks in solar cell fabrication processes |
-
2010
- 2010-06-07 US US12/795,526 patent/US8211731B2/en active Active
-
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- 2011-03-24 KR KR1020127034342A patent/KR101877071B1/ko active IP Right Grant
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- 2016-03-10 JP JP2016047147A patent/JP6352964B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006523025A (ja) * | 2003-04-10 | 2006-10-05 | サンパワー コーポレイション | 太陽電池用金属コンタクト構造体及び製法 |
JP2007503124A (ja) * | 2003-08-19 | 2007-02-15 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | テイラード・レーザーパルス組の発生方法 |
JP2007530292A (ja) * | 2004-03-31 | 2007-11-01 | アイシン精機株式会社 | 制御された熱的、物理的改質を用いるパルスレーザ処理。 |
JP2008533730A (ja) * | 2005-03-16 | 2008-08-21 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | 厚いシリコン酸化物とシリコン窒化物の保護層を有する光起電電池とその作製 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
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US20110300665A1 (en) | 2011-12-08 |
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