JP5473414B2 - レーザ加工装置 - Google Patents
レーザ加工装置 Download PDFInfo
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- JP5473414B2 JP5473414B2 JP2009139029A JP2009139029A JP5473414B2 JP 5473414 B2 JP5473414 B2 JP 5473414B2 JP 2009139029 A JP2009139029 A JP 2009139029A JP 2009139029 A JP2009139029 A JP 2009139029A JP 5473414 B2 JP5473414 B2 JP 5473414B2
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- 239000004065 semiconductor Substances 0.000 claims description 57
- 230000010287 polarization Effects 0.000 claims description 24
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- 238000005452 bending Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 9
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- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Dicing (AREA)
Description
波長 :355nm
平均出力 :0.5W
パルス幅 :10ps
繰り返し周波数 :100kHz
スポット径 :φ10μm
送り速度 :100mm/s
T 粘着テープ(ダイシングテープ)
F 環状フレーム
D デバイス
2 レーザ加工装置
28 チャックテーブル
34 レーザビーム照射ユニット
35 レーザビーム発生ユニット
36 光学系
37 集光器
38 集光レンズ
70 第1の偏光ビームスプリッタ
72 第1の1/2波長板
76,86 ミラー
80 第2の偏光ビームスプリッタ
Claims (3)
- レーザ加工装置であって、
半導体ウエーハを保持するチャックテーブルと、
該チャックテーブルに保持された半導体ウエーハにレーザビームを照射するレーザビーム照射手段と、
該チャックテーブルと該レーザビーム照射手段とを相対的に加工送りする加工送り手段とを具備し、
該レーザビーム照射手段は、
レーザビーム発生ユニットと、
該レーザビーム発生ユニットが発生したレーザビームを第1のレーザビームと第2のレーザビームとに分岐する第1の偏光ビームスプリッタと、
該レーザビーム発生ユニットと該第1の偏光ビームスプリッタとの間に挿入された第1の1/2波長板と、
該第1の偏光ビームスプリッタを透過した第1のレーザビームを第2のレーザビームの光路と平行な光路に反射する第1のミラーと、
第2のレーザビームを直角方向に反射する第2のミラーと、
該第1のミラーで反射された第1のレーザビームと該第2のミラーで反射された第2のレーザビームが交差する位置に配置された第2の偏光ビームスプリッタと、
該第2の偏光ビームスプリッタを透過した第1のレーザビーム及び該第2の偏光ビームスプリッタで反射された第2のレーザビームを、前記チャックテーブルに保持された半導体ウエーハ上に集光する集光レンズとを含み、
該第1の1/2波長板を回転制御することにより、該集光レンズによって集光される第1のレーザビームのピークエネルギー密度を250GW/cm 2 以上の第1の所定値に設定し、該集光レンズによって集光される第2のレーザビームのピークエネルギー密度を該第1の所定値よりも低い5〜200GW/cm 2 の範囲内の第2の所定値に設定し、
ピークエネルギー密度が該第1の所定値に設定された第1のレーザビームで半導体ウエーハにレーザ加工溝を形成し、
ピークエネルギー密度が該第2の所定値に設定された第2のレーザビームで該レーザ加工溝に仕上げ加工を施すことを特徴とするレーザ加工装置。 - 前記レーザビーム照射手段は、該第1のミラーと該第2の偏光ビームスプリッタとの間に挿入された第2の1/2波長板と、該第1の偏光ビームスプリッタと該第2のミラーとの間に挿入された第3の1/2波長板とを更に含み、
該第2の1/2波長板を回転制御することにより、該集光レンズによって集光される第1のレーザビームのピークエネルギー密度を調整し、該第3の1/2波長板を回転制御することにより、該集光レンズによって集光される第2のレーザビームのピークエネルギー密度を調整する請求項1記載のレーザ加工装置。 - 前記レーザビーム照射手段は、該第1のミラーを該第1の偏光ビームスプリッタを透過した第1のレーザビームの光路と平行な方向に移動する第1の移動手段と、該第2のミラーを該第1の偏光ビームスプリッタで反射された第2のレーザビームの光路と平行な方向に移動する第2の移動手段とを更に含み、
該第1のミラーを該第1の移動手段で移動するか、又は該第2のミラーを該第2の移動手段で移動することにより、該集光レンズにより集光される第1のレーザビームと第2のレーザビームとの間隔を調整する請求項1又は2記載のレーザ加工装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009139029A JP5473414B2 (ja) | 2009-06-10 | 2009-06-10 | レーザ加工装置 |
US12/795,887 US8314014B2 (en) | 2009-06-10 | 2010-06-08 | Laser processing apparatus and laser processing method |
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JP2009139029A JP5473414B2 (ja) | 2009-06-10 | 2009-06-10 | レーザ加工装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010284669A JP2010284669A (ja) | 2010-12-24 |
JP5473414B2 true JP5473414B2 (ja) | 2014-04-16 |
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JP2009139029A Active JP5473414B2 (ja) | 2009-06-10 | 2009-06-10 | レーザ加工装置 |
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JP (1) | JP5473414B2 (ja) |
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