JP2017092126A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP2017092126A JP2017092126A JP2015217351A JP2015217351A JP2017092126A JP 2017092126 A JP2017092126 A JP 2017092126A JP 2015217351 A JP2015217351 A JP 2015217351A JP 2015217351 A JP2015217351 A JP 2015217351A JP 2017092126 A JP2017092126 A JP 2017092126A
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- 238000003672 processing method Methods 0.000 title claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000003754 machining Methods 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000006735 deficit Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 101
- 238000002407 reforming Methods 0.000 description 12
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
Description
波長 :1342nm
繰り返し周波数 :50kHz
平均出力 :0.5W
集光スポット径 :φ3μm
加工送り速度 :200mm/s
13a 第1分割予定ライン
13b 第2分割予定ライン
15 デバイス
17 第1方向改質層
19 第2方向改質層
24 チャックテーブル
27 ヒーター
31 熱風
34 レーザービーム照射ユニット
35 レーザービーム発生ユニット
38 集光器(レーザーヘッド)
40 撮像ユニット
50 分割装置
Claims (2)
- 第1の方向に形成された複数の第1分割予定ラインと該第1の方向と交差する第2の方向に形成された複数の第2分割予定ラインとで区画された各領域にデバイスが形成され、該第1分割予定ラインと該第2分割予定ラインのうち少なくとも該第2分割予定ラインが非連続に形成されているウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
該第1分割予定ラインに沿って、ウエーハに対し透過性を有する波長のレーザービームをウエーハの裏面側からウエーハの内部に集光して照射し、ウエーハの内部に該第1分割予定ラインに沿った複数層の第1方向改質層を形成する第1方向改質層形成ステップと、
該第1方向改質層形成ステップを実施した後、該第2分割予定ラインに沿って、ウエーハに対し透過性を有する波長のレーザービームをウエーハの裏面側からウエーハの内部に集光して照射し、ウエーハの内部に該第2分割予定ラインに沿った複数層の第2方向改質層を形成する第2方向改質層形成ステップと、
該第1方向改質層形成ステップ及び該第2方向改質層形成ステップを実施した後、ウエーハに外力を付与し、該第1方向改質層及び該第2方向改質層を破断起点にウエーハを該第1分割予定ライン及び該第2分割予定ラインに沿って破断して個々のデバイスチップに分割する分割ステップと、を備え、
該第2方向改質層形成ステップは、該第1方向改質層が形成された該第1分割予定ラインにT字路となって交わる該第2分割予定ラインの内部に第2方向改質層を形成するT字路加工ステップを含み、
該T字路加工ステップは、少なくとも該第1分割予定ラインと該第2分割予定ラインとの交点近傍を加熱して、該T字路加工ステップで照射するレーザービームの吸収性を向上させる加熱ステップを含むことを特徴とするウエーハの加工方法。 - 該加熱ステップで加熱する温度は50℃〜120℃に設定される請求項1記載のウエーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015217351A JP6521837B2 (ja) | 2015-11-05 | 2015-11-05 | ウエーハの加工方法 |
TW105132384A TWI694507B (zh) | 2015-11-05 | 2016-10-06 | 晶圓的加工方法 |
CN201610951897.5A CN107030404B (zh) | 2015-11-05 | 2016-10-27 | 晶片的加工方法 |
KR1020160141846A KR102424648B1 (ko) | 2015-11-05 | 2016-10-28 | 웨이퍼의 가공 방법 |
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JP2015217351A JP6521837B2 (ja) | 2015-11-05 | 2015-11-05 | ウエーハの加工方法 |
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Publication Number | Publication Date |
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JP2017092126A true JP2017092126A (ja) | 2017-05-25 |
JP6521837B2 JP6521837B2 (ja) | 2019-05-29 |
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JP2015217351A Active JP6521837B2 (ja) | 2015-11-05 | 2015-11-05 | ウエーハの加工方法 |
Country Status (4)
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JP (1) | JP6521837B2 (ja) |
KR (1) | KR102424648B1 (ja) |
CN (1) | CN107030404B (ja) |
TW (1) | TWI694507B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020138357A1 (ja) * | 2018-12-28 | 2020-07-02 | 株式会社フジクラ | 光透過性部品の製造方法、及び、光透過性部品の製造システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2003088973A (ja) * | 2001-09-12 | 2003-03-25 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2011233641A (ja) * | 2010-04-26 | 2011-11-17 | Disco Abrasive Syst Ltd | 板状物のレーザー加工方法 |
JP2012028450A (ja) * | 2010-07-21 | 2012-02-09 | Hamamatsu Photonics Kk | レーザ加工方法 |
Family Cites Families (15)
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JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
US6211488B1 (en) * | 1998-12-01 | 2001-04-03 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe |
KR100400059B1 (ko) * | 2000-10-10 | 2003-09-29 | 삼성전자주식회사 | 비금속 기판 절단 장치 및 그 절단 방법 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
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JP2010123723A (ja) | 2008-11-19 | 2010-06-03 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP2011035253A (ja) * | 2009-08-04 | 2011-02-17 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011061043A (ja) * | 2009-09-10 | 2011-03-24 | Disco Abrasive Syst Ltd | 加工方法および半導体デバイスの製造方法 |
JP5441629B2 (ja) * | 2009-11-13 | 2014-03-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2011108708A (ja) * | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5558128B2 (ja) * | 2010-02-05 | 2014-07-23 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP6062315B2 (ja) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
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2015
- 2015-11-05 JP JP2015217351A patent/JP6521837B2/ja active Active
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- 2016-10-06 TW TW105132384A patent/TWI694507B/zh active
- 2016-10-27 CN CN201610951897.5A patent/CN107030404B/zh active Active
- 2016-10-28 KR KR1020160141846A patent/KR102424648B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2003088973A (ja) * | 2001-09-12 | 2003-03-25 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2011233641A (ja) * | 2010-04-26 | 2011-11-17 | Disco Abrasive Syst Ltd | 板状物のレーザー加工方法 |
JP2012028450A (ja) * | 2010-07-21 | 2012-02-09 | Hamamatsu Photonics Kk | レーザ加工方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020138357A1 (ja) * | 2018-12-28 | 2020-07-02 | 株式会社フジクラ | 光透過性部品の製造方法、及び、光透過性部品の製造システム |
JPWO2020138357A1 (ja) * | 2018-12-28 | 2021-11-04 | 株式会社フジクラ | 光透過性部品の製造方法、及び、光透過性部品の製造システム |
JP7177180B2 (ja) | 2018-12-28 | 2022-11-22 | 株式会社フジクラ | 光透過性部品の製造方法、及び、光透過性部品の製造システム |
Also Published As
Publication number | Publication date |
---|---|
CN107030404A (zh) | 2017-08-11 |
CN107030404B (zh) | 2020-01-31 |
KR102424648B1 (ko) | 2022-07-25 |
KR20170053111A (ko) | 2017-05-15 |
TW201729270A (zh) | 2017-08-16 |
TWI694507B (zh) | 2020-05-21 |
JP6521837B2 (ja) | 2019-05-29 |
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