JP2010532927A - 半導体素子のためのコンタクト構造とその製造方法 - Google Patents
半導体素子のためのコンタクト構造とその製造方法 Download PDFInfo
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- JP2010532927A JP2010532927A JP2010515368A JP2010515368A JP2010532927A JP 2010532927 A JP2010532927 A JP 2010532927A JP 2010515368 A JP2010515368 A JP 2010515368A JP 2010515368 A JP2010515368 A JP 2010515368A JP 2010532927 A JP2010532927 A JP 2010532927A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 91
- 239000004020 conductor Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005291 magnetic effect Effects 0.000 claims description 2
- 238000011437 continuous method Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007585 pull-off test Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000898 sterling silver Inorganic materials 0.000 description 1
- 239000010934 sterling silver Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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Abstract
【解決手段】 半導体素子(1)が基板(2)を備え、この基板(2)は、第1面(3)と、第2面(4)と、基板(2)の少なくとも1つの面(3、4)に配されている多層コンタクト構造(9)とを有している。コンタクト構造(9)は、基板(2)に対向するバリア層(6)の面から基板(2)へのイオン拡散防止のためにバリア層(6)を有している。
Description
2 基板
3 前面
4 背面
5 導体パス
6 バリア層
7 導体層
8 保護層
9 多層コンタクト構造
10 第1方法ステップ
11 次の方法ステップ(第1電解析出)
12 更なる方法ステップ(第2電解析出)
13 更なる方法ステップ(保護コーティング)
14 絶縁層
15 コンタクト開口部
B 幅
H 高さ
Claims (15)
- 第1面(3)と第2面(4)とを有している基板(2)と、
基板(2)の少なくとも1つの面(3、4)に配されている多層コンタクト構造(9)とを備えている半導体素子(1)であって、
コンタクト構造(9)が、バリア層(6)の基板(2)に対向している面から基板(2)へのイオン拡散防止のためにバリア層(6)を有している半導体素子(1)。 - コンタクト構造(9)が、基板(2)の第1面(3)から高さH分突出している複数の導体パス(5)を有していることを特徴とする、請求項1に記載の半導体素子(1)。
- 導体パス(5)の高さHが、1μm〜50μmの範囲に、特に5μm〜15μmの範囲にあることを特徴とする、請求項2に記載の半導体素子(1)。
- バリア層(6)が、少なくとも部分的にコバルト及び/或いはニッケルから形成されていることを特徴とする、請求項1〜3のうちのいずれか1項に記載の半導体素子(1)。
- バリア層(6)が、0.1μm〜5μmの、特に0.2μm〜1μmの厚さを有していることを特徴とする、請求項1〜4のうちのいずれか1項に記載の半導体素子(1)。
- コンタクト構造(9)が、バリア層(6)に配されている導体層(7)を備えていることを特徴とする、請求項1〜5のうちのいずれか1項に記載の半導体素子(1)。
- 導体層(7)が、少なくとも部分的に銅から形成されていることを特徴とする、請求項6に記載の半導体素子(1)。
- コンタクト構造(9)が、少なくとも0.1、特に少なくとも0.2、特に少なくとも0.4のアスペクト比AVKSを有していることを特徴とする、請求項1〜7のうちのいずれか1項に記載の半導体素子(1)。
- 導体パス(5)がアスペクト比AVLbを有し、コンタクト構造(9)がアスペクト比AVKSを有し、その数値がAVKS/AVLb≧1.5、特にAVKS/AVLb≧2、特にAVKS/AVLb≧4であることを特徴とする、請求項2〜8のうちのいずれか1項に記載の半導体素子(1)。
- −基板(2)を準備するステップと、
−基板(2)にバリア層(6)を被覆するステップと、
−バリア層(6)に導体層(7)を被覆するステップと
を備えている、請求項1〜9のうちのいずれか1項に記載の半導体素子(1)の製造方法。 - 基板(2)が、第1方法ステップ(10)において、導体パス(5)を設けられることを特徴とする、請求項10に記載の方法。
- 少なくとも1つの層(6、7)の被覆が、電解析出を用いて行われることを特徴とする、請求項10又は11のうちの1項に記載の方法。
- 少なくとも1つの層(6、7)の被覆が、光誘起電気めっきを用いて行われることを特徴とする、請求項10〜12のうちのいずれか1項に記載の方法。
- 基板(2)にバリア層(6)を被覆するステップと、バリア層(6)に導体層(7)を被覆するステップと、保護層(8)を被覆するステップとが、焼戻しステップにより中断されない連続する方法として成されることを特徴とする、請求項13に記載の方法。
- バリア層(6)の被覆が、不均質な磁界に重ね載せることにより促進されることを特徴とする、請求項10〜14のうちのいずれか1項に記載の方法。
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DE102007031958.6 | 2007-07-10 | ||
DE102007031958A DE102007031958A1 (de) | 2007-07-10 | 2007-07-10 | Kontakt-Struktur für ein Halbleiter-Bauelement sowie Verfahren zur Herstellung desselben |
PCT/EP2008/004960 WO2009006988A1 (de) | 2007-07-10 | 2008-06-19 | Kontakt-struktur für euin halbleiter-bauelement sowie verfahren zur herstellung desselben |
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JP2010532927A true JP2010532927A (ja) | 2010-10-14 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017163111A (ja) * | 2016-03-11 | 2017-09-14 | Dowaエレクトロニクス株式会社 | 半導体光デバイスおよびその製造方法 |
JP2018041753A (ja) * | 2016-09-05 | 2018-03-15 | 長州産業株式会社 | 光発電素子及びその製造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
JPS57172753A (en) * | 1981-03-23 | 1982-10-23 | Gen Electric | Semiconductor element with low resistance contact projected |
JPS61177392A (ja) * | 1985-02-01 | 1986-08-09 | Tdk Corp | めつき方法 |
JPH0684909A (ja) * | 1992-09-02 | 1994-03-25 | Nec Corp | 半導体装置 |
JPH09503345A (ja) * | 1993-09-30 | 1997-03-31 | シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング | 結晶シリコンからなる太陽電池の金属化方法 |
JPH10233507A (ja) * | 1996-03-13 | 1998-09-02 | Seiko Instr Inc | 半導体集積回路とその製造方法 |
JP2002217430A (ja) * | 2001-01-03 | 2002-08-02 | Samsung Sdi Co Ltd | Pn接合太陽電池 |
JP2005123447A (ja) * | 2003-10-17 | 2005-05-12 | Shin Etsu Handotai Co Ltd | 太陽電池及びその製造方法 |
JP2005240162A (ja) * | 2004-02-27 | 2005-09-08 | Univ Waseda | 磁性薄膜及びその製造方法、並びにその薄膜を用いた薄膜磁気ヘッド |
JP2006086378A (ja) * | 2004-09-16 | 2006-03-30 | Denso Corp | 半導体装置及びその製造方法 |
JP2006523025A (ja) * | 2003-04-10 | 2006-10-05 | サンパワー コーポレイション | 太陽電池用金属コンタクト構造体及び製法 |
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
JPS57172753A (en) * | 1981-03-23 | 1982-10-23 | Gen Electric | Semiconductor element with low resistance contact projected |
JPS61177392A (ja) * | 1985-02-01 | 1986-08-09 | Tdk Corp | めつき方法 |
JPH0684909A (ja) * | 1992-09-02 | 1994-03-25 | Nec Corp | 半導体装置 |
JPH09503345A (ja) * | 1993-09-30 | 1997-03-31 | シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング | 結晶シリコンからなる太陽電池の金属化方法 |
JPH10233507A (ja) * | 1996-03-13 | 1998-09-02 | Seiko Instr Inc | 半導体集積回路とその製造方法 |
JP2002217430A (ja) * | 2001-01-03 | 2002-08-02 | Samsung Sdi Co Ltd | Pn接合太陽電池 |
JP2006523025A (ja) * | 2003-04-10 | 2006-10-05 | サンパワー コーポレイション | 太陽電池用金属コンタクト構造体及び製法 |
JP2005123447A (ja) * | 2003-10-17 | 2005-05-12 | Shin Etsu Handotai Co Ltd | 太陽電池及びその製造方法 |
JP2005240162A (ja) * | 2004-02-27 | 2005-09-08 | Univ Waseda | 磁性薄膜及びその製造方法、並びにその薄膜を用いた薄膜磁気ヘッド |
JP2006086378A (ja) * | 2004-09-16 | 2006-03-30 | Denso Corp | 半導体装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017163111A (ja) * | 2016-03-11 | 2017-09-14 | Dowaエレクトロニクス株式会社 | 半導体光デバイスおよびその製造方法 |
JP2018041753A (ja) * | 2016-09-05 | 2018-03-15 | 長州産業株式会社 | 光発電素子及びその製造方法 |
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DE102007031958A1 (de) | 2009-01-15 |
WO2009006988A1 (de) | 2009-01-15 |
EP2162922A1 (de) | 2010-03-17 |
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